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1. 发明申请

US20180374745A1 Semiconductor Constructions; and Methods for Providing Electrically Conductive Material Within Openings 审中-公开
公开(公告)号：US20180374745A1
公开(公告)日：2018-12-27
申请号：US16103012
申请日：2018-08-14
申请人： Micron Technology, Inc.
发明人： Dale W. Collins , Joe Lindgren
IPC分类号： H01L21/768 , H01L21/285 , H01L23/532
摘要： Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.

2. 发明授权

US10121697B2 Semiconductor constructions; and methods for providing electrically conductive material within openings 有权
公开(公告)号：US10121697B2
公开(公告)日：2018-11-06
申请号：US14930524
申请日：2015-11-02
申请人： Micron Technology, Inc.
发明人： Dale W. Collins , Joe Lindgren
IPC分类号： H01L21/768 , H01L21/285 , H01L23/532
摘要： Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.

3. 发明申请

US20160056073A1 Semiconductor Constructions; and Methods for Providing Electrically Conductive Material Within Openings 审中-公开
标题翻译：半导体建筑; 以及在开口内提供导电材料的方法
公开(公告)号：US20160056073A1
公开(公告)日：2016-02-25
申请号：US14930524
申请日：2015-11-02
申请人： Micron Technology, Inc.
发明人： Dale W. Collins , Joe Lindgren
IPC分类号： H01L21/768 , H01L21/285
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/28556 , H01L21/28562 , H01L21/768 , H01L21/76856 , H01L21/76877 , H01L21/76882 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Some embodiments include methods for depositing copper-containing material utilizing physical vapor deposition of the copper-containing material while keeping a temperature of the deposited copper-containing material at greater than 100° C. Some embodiments include methods in which openings are lined with a metal-containing composition, copper-containing material is physical vapor deposited over the metal-containing composition while a temperature of the copper-containing material is no greater than about 0° C., and the copper-containing material is then annealed while the copper-containing material is at a temperature in a range of from about 180° C. to about 250° C. Some embodiments include methods in which openings are lined with a composition containing metal and nitrogen, and the lined openings are at least partially filled with copper-containing material. Some embodiments include semiconductor constructions having a metal nitride liner along sidewall peripheries of an opening, and having copper-containing material within the opening and directly against the metal nitride liner.
摘要翻译：一些实施例包括利用含铜材料的物理气相沉积同时保持沉积的含铜材料的温度在大于100℃的情况下沉积含铜材料的方法。一些实施例包括其中开口衬有金属的方法含铜材料在含金属的组合物上物理气相沉积，同时含铜材料的温度不大于约0℃，然后使含铜材料退火，同时铜 - 含有材料的温度范围为约180℃至约250℃。一些实施方案包括其中开口衬有含有金属和氮的组合物的方法，并且衬里的开口至少部分地填充有铜含材料。一些实施方案包括在开口的侧壁周边具有金属氮化物衬垫的半导体结构，并且在开口内具有含铜材料并且直接抵靠金属氮化物衬垫。

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