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    • 10. 发明申请
    • SEMICONDUCTOR SUBSTRATE FOR PHOTONIC AND ELECTRONIC STRUCTURES AND METHOD OF MANUFACTURE
    • 用于光电子和电子结构的半导体衬底及其制造方法
    • US20140341503A1
    • 2014-11-20
    • US14446744
    • 2014-07-30
    • MICRON TECHNOLOGY, INC.
    • Roy MeadeGurtej Sandhu
    • G02B6/122
    • H01L21/76229G02B6/1225G02B6/13G02B6/136G02B2006/121H01L21/3086H01L21/76232H01L21/76283H01L27/092H01L27/14689H01L29/0649
    • A method of forming a substrate with isolation areas suitable for integration of electronic and photonic devices is provided. A common reticle and photolithographic technique is used to fabricate a mask defining openings for etching first and second trench isolation areas in a substrate, with the openings for the second trench isolation areas being wider than the openings for the first trench isolation areas. The first and second trench isolation areas are etched in the substrate through the mask. The second trench isolation areas are further etched to the deeper than the first trench isolation areas. The trench isolation areas are filled with oxide material. Electrical devices can be formed on the substrate and electrically isolated by the first trench isolation areas and photonic devices can be formed over the second trench isolation areas and be optically isolated from the substrate.
    • 提供了一种形成具有适用于电子和光子器件集成的隔离区的衬底的方法。 常用的掩模版和光刻技术用于制造掩模,其限定用于蚀刻衬底中的第一和第二沟槽隔离区的开口,其中用于第二沟槽隔离区的开口比第一沟槽隔离区的开口宽。 通过掩模在衬底中蚀刻第一和第二沟槽隔离区域。 第二沟槽隔离区域被进一步蚀刻到比第一沟槽隔离区域更深的位置。 沟槽隔离区填充氧化物材料。 电子器件可以形成在衬底上并由第一沟槽隔离区域电隔离,并且光子器件可以形成在第二沟槽隔离区域上并且与衬底光学隔离。