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1. 发明授权

US11108957B1 Low power operation of differential image sensor pixels 有权
公开(公告)号：US11108957B1
公开(公告)日：2021-08-31
申请号：US16903939
申请日：2020-06-17
申请人： Microsoft Technology Licensing, LLC
发明人： Minseok Oh , Cyrus Soli Bamji , Swati Mehta , Barry Thompson , Andrew Dean Payne
IPC分类号： H04N5/232 , H04N5/369 , H04N5/3745 , G01S17/894 , H04N5/343
摘要： An imaging system includes a sensor array of differential pixels. A controller operates a first differential pixel of the sensor array in a first, lower power mode. The controller supplies a first clock signal to selectively activate a first collection terminal of the first differential pixel for a first duration, and a second clock signal to selectively activate a second collection terminal of the first differential pixel for a second duration. In an analog domain, a first amount of charge accumulated at the first collection terminal over the first duration is readout and compared to a readout of a second amount of charge accumulated at the second collection terminal over the second duration. Responsive to the first amount of charge being different from the second amount of charge by more than a threshold, the first differential pixel of the sensor array is operated in a second, higher power mode.

2. 发明授权

US11627274B2 Image sensing pixels with lateral overflow storage 有权
公开(公告)号：US11627274B2
公开(公告)日：2023-04-11
申请号：US17233318
申请日：2021-04-16
申请人： Microsoft Technology Licensing, LLC
发明人： Minseok Oh
IPC分类号： H04N5/378 , H01L27/146 , H04N5/355 , H04N5/361 , H04N5/374 , H04N5/3745
摘要： An image sensor includes sensing pixels, each comprising a photodetector in electrical communication with a floating diffusion capacitor via a transfer gate, and a lateral overflow storage capacitor coupled to the floating diffusion capacitor via a lateral overflow control gate. A first readout circuit circuitry located between the transfer gate and the lateral overflow control gate comprises a first amplifier. A second readout circuitry, located opposite the lateral overflow control gate from the first readout circuitry, comprises a second amplifier. Following image integration, charge stored on the floating diffusion capacitor is readout using the first readout circuitry and charge stored on the lateral overflow storage capacitor is readout using the second readout circuitry. In a second readout, charge stored on the photodetector is readout using the first readout circuitry with a first amplification applied and charge stored on the photodetector is readout with a second, different amplification applied.

3. 发明授权

US11330246B2 Imaging system configured to use time-of-flight imaging and stereo imaging 有权
公开(公告)号：US11330246B2
公开(公告)日：2022-05-10
申请号：US16691372
申请日：2019-11-21
申请人： MICROSOFT TECHNOLOGY LICENSING, LLC
发明人： Minseok Oh
IPC分类号： H04N13/254 , G06T7/593 , H04N13/296 , H04N13/239 , G01S17/86 , G01S17/894 , G01C3/14 , H04N13/00
摘要： An imaging system is configured to use an array of time-of-flight (ToF) pixels to determine depth information using the ToF imaging method and/or the stereo imaging method. A light emitting component emits light to illuminate a scene and a light detecting component detects reflected light via the array of ToF pixels. A ToF pixel is configured to determine phase shift data based on a phase shift between the emitted light and the reflected light, as well as intensity data based on an amplitude of the reflected light. Multiple ToF pixels are shared by a single micro-lens. This enables multiple offset images to be generated using the intensity data measured by each ToF pixel. Accordingly, via a configuration in which multiple ToF pixels share a single micro-lens, depth information can be determined using both the ToF imaging method and the stereo imaging method.

4. 发明授权

US11588982B2 Depth image sensor with always-depleted photodiodes 有权
公开(公告)号：US11588982B2
公开(公告)日：2023-02-21
申请号：US17195358
申请日：2021-03-08
申请人： Microsoft Technology Licensing, LLC
发明人： Minseok Oh , Satyadev Hulikal Nagaraja , Cyrus Soli Bamji
IPC分类号： H04N5/235 , H04N5/225 , H01L27/146
摘要： Examples are disclosed that relate to the use of an always-depleted photodiode in a ToF depth image sensor. One example provides a method of operating a pixel of a depth image sensor, the method comprising receiving photons in a photocharge generation region of the pixel, the photocharge generation region of the pixel comprising an always-depleted photodiode formed by a doped first region comprising one of p-doping or n-doping and a more lightly-doped second region comprising the other of p-doping or n-doping. The method further comprises, during an integration phase, energizing a clock gate for a pixel tap, thereby directing photocharge generated in the photocharge generation region to an in-pixel storage comprising a capacitor, and in a readout phase, reading charge out from the in-pixel storage.

5. 发明授权

US11509848B2 Photodiode assembly 有权
公开(公告)号：US11509848B2
公开(公告)日：2022-11-22
申请号：US17146199
申请日：2021-01-11
申请人： Microsoft Technology Licensing, LLC
发明人： Minseok Oh
IPC分类号： H04N5/374 , H04N5/369 , H04N5/378 , H01L27/146
摘要： A photodiode assembly comprises a photoconductive substrate, including a P-doped region coupled with a controllable voltage biasing source, and an adjacent N-doped well. The photodiode assembly further comprises first and second capacitors coupled with the photoconductive substrate on first and second sides of the N-doped well. First and second control inputs are also coupled with the photoconductive substrate, wherein activation of the first control input causes electrons to flow through a first multiplication region of the N-doped well toward the first capacitor in response to photons striking the photoconductive substrate, and activation of the second control input causes electrons to flow through a second multiplication region of the N-doped well toward the second capacitor in response to photons striking the photoconductive substrate. Selectively controlling a voltage provided by the voltage biasing source changes a multiplication effect provided by the first and second multiplication regions of the N-doped well.

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