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1. 发明授权

US07868366B2 Image sensor and method for fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US07868366B2
公开(公告)日：2011-01-11
申请号：US12048634
申请日：2008-03-14
申请人： Min Hyung Lee
发明人： Min Hyung Lee
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/14632 , H01L21/76849 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14687
摘要： An image sensor is disclosed including a second semiconductor substrate including a metal interconnection and a second interlayer dielectric; a second via penetrating the second interlayer dielectric so that the second via is connected to the metal interconnection; a first semiconductor substrate on the second interlayer dielectric, the first semiconductor substrate having a unit pixel; a pre-metal dielectric on the first semiconductor substrate; a first via penetrating the pre-metal dielectric and the first semiconductor substrate, the first via being electrically connected to the second via; a first interlayer dielectric on the pre-metal dielectric including the first via; a metal interconnection on the first interlayer dielectric and connected to the first via and the unit pixel; a conductive barrier layer on the metal interconnection; and a color filter and a microlens on the first interlayer dielectric in each unit pixel.
摘要翻译：公开了一种图像传感器，包括：包括金属互连和第二层间电介质的第二半导体衬底; 穿过所述第二层间电介质的第二通孔，使得所述第二通孔连接到所述金属互连; 在所述第二层间电介质上的第一半导体衬底，所述第一半导体衬底具有单位像素; 在所述第一半导体衬底上的预金属电介质; 第一通孔穿过前金属电介质和第一半导体衬底，第一通孔电连接到第二通孔; 包括所述第一通孔的所述预金属电介质上的第一层间电介质; 在所述第一层间电介质上的金属互连，并连接到所述第一通孔和所述单位像素; 金属互连上的导电阻挡层; 以及每个单位像素中的第一层间电介质上的滤色器和微透镜。

2. 发明授权

US07700401B2 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07700401B2
公开(公告)日：2010-04-20
申请号：US11842787
申请日：2007-08-21
申请人： Min Hyung Lee
发明人： Min Hyung Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14632 , H01L21/76846 , H01L21/76849 , H01L27/14621 , H01L27/14627 , H01L27/14687
摘要： An image sensor according to one embodiment of the present invention includes a semiconductor substrate having a CMOS circuit formed therein; an interlayer dielectric layer formed on the semiconductor substrate and including a trench formed therein; a metal wiring and a first conductive layer formed within the trench of the interlayer dielectric layer; an intrinsic layer formed on the semiconductor substrate including the first conductive layer and the interlayer dielectric layer; and a second conductive layer formed on the intrinsic layer.
摘要翻译：根据本发明的一个实施例的图像传感器包括其中形成有CMOS电路的半导体衬底; 形成在所述半导体衬底上并且包括形成在其中的沟槽的层间电介质层; 金属布线和形成在层间介电层的沟槽内的第一导电层; 形成在包括第一导电层和层间介电层的半导体衬底上的本征层; 以及形成在本征层上的第二导电层。

3. 发明授权

US06746583B2 Microchip-based carbon dioxide gas sensor 失效
标题翻译：基于Microchip的二氧化碳气体传感器
公开(公告)号：US06746583B2
公开(公告)日：2004-06-08
申请号：US09877857
申请日：2001-06-08
申请人： Jae Seon Lee , Jae Ho Shin , Min Hyung Lee , Hakhyun Nam , Geun Sig Cha
发明人： Jae Seon Lee , Jae Ho Shin , Min Hyung Lee , Hakhyun Nam , Geun Sig Cha
IPC分类号： G01N27327
CPC分类号： G01N27/333 , G01N27/4162 , G01N33/004
摘要： There is provided a microchip-based differential-type carbon dioxide gas sensor for detecting dissolved carbon dioxide levels. It functions with at least one working electrode composed of an unbuffered hydrogel membrane containing a certain amount of sodium bicarbonate and a pH-sensitive gas-permeable membrane; and a reference electrode composed of a buffered hydrogel membrane and a pH-sensitive gas-permeable membrane. The unbuffered hydrogel membrane contains carbonic anhydrase, which reduces the time period for the hydration of carbon dioxide, thereby allowing the quick measurement of the level of carbon dioxide. In addition to being significantly improved in stabilization, sensing, and recovering time periods, the differential-type carbon dioxide gas sensor can be fabricated in small sizes and quickly measure levels of carbon dioxide dissolved in sample solution.
摘要翻译：提供了一种用于检测溶解二氧化碳水平的基于微芯片的差分式二氧化碳气体传感器。它与至少一个由含有一定量碳酸氢钠和pH敏感性透气膜的无缓冲水凝胶膜组成的工作电极起作用; 以及由缓冲水凝胶膜和pH敏感性透气膜构成的参比电极。无缓冲水凝胶膜含有碳酸酐酶，减少了二氧化碳水化的时间，从而可以快速测定二氧化碳的含量。除了稳定化，感测和恢复时间段的显着改进之外，差分型二氧化碳气体传感器可以制造成小尺寸并且快速测量溶解在样品溶液中的二氧化碳的水平。

4. 发明授权

US09168679B2 Programmable soft lithography: solvent-assisted nanoscale embossing 有权
标题翻译：可编程软光刻：溶剂辅助纳米级压花
公开(公告)号：US09168679B2
公开(公告)日：2015-10-27
申请号：US13135910
申请日：2011-07-18
申请人： Teri W. Odom , Min Hyung Lee , Mark D. Huntington , Wei Zhou
发明人： Teri W. Odom , Min Hyung Lee , Mark D. Huntington , Wei Zhou
IPC分类号： B29C33/38 , B29C61/02 , B29C33/40 , B29C55/00 , B29C33/42
CPC分类号： B29C33/3857 , B29C33/3878 , B29C33/40 , B29C33/405 , B29C33/424 , B29C55/005 , B29C61/02
摘要： A method of forming a nanoscale pattern on a substrate is provided, wherein the method increases or decreases the spacing of patterns on the substrate relative to a master, while keeping the pattern feature size constant. The method can alternatively reduce the pattern feature size of the substrate relative to a master, while keeping the spacing patterns constant.
摘要翻译：提供了在衬底上形成纳米尺度图案的方法，其中该方法相对于母版增加或减少衬底上图案的间隔，同时保持图案特征尺寸恒定。该方法可以可选地减小衬底相对于母板的图案特征尺寸，同时保持间隔图案恒定。

5. 发明申请

US20120013039A1 Programmable soft lithography: solvent-assisted nanoscle embossing 有权
标题翻译：可编程软光刻：溶剂辅助纳米尺寸压花
公开(公告)号：US20120013039A1
公开(公告)日：2012-01-19
申请号：US13135910
申请日：2011-07-18
申请人： Teri W. Odom , Min Hyung Lee , Mark D. Huntington , Wei Zhou
发明人： Teri W. Odom , Min Hyung Lee , Mark D. Huntington , Wei Zhou
IPC分类号： B29C33/40
CPC分类号： B29C33/3857 , B29C33/3878 , B29C33/40 , B29C33/405 , B29C33/424 , B29C55/005 , B29C61/02
摘要： A method of forming a nanoscale pattern on a substrate is provided, wherein the method increases or decreases the spacing of patterns on the substrate relative to a master, while keeping the pattern feature size constant. The method can alternatively reduce the pattern feature size of the substrate relative to a master, while keeping the spacing patterns constant.
摘要翻译：提供了在衬底上形成纳米尺度图案的方法，其中该方法相对于母版增加或减少衬底上图案的间隔，同时保持图案特征尺寸恒定。该方法可以可选地减小衬底相对于母板的图案特征尺寸，同时保持间隔图案恒定。

6. 发明授权

US07863747B2 Semiconductor chip, method of fabricating the same and semiconductor chip stack package 有权
标题翻译：半导体芯片，其制造方法和半导体芯片堆叠封装
公开(公告)号：US07863747B2
公开(公告)日：2011-01-04
申请号：US12340273
申请日：2008-12-19
申请人： Min Hyung Lee
发明人： Min Hyung Lee
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76898 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/12 , H01L24/16 , H01L25/0657 , H01L2224/0231 , H01L2224/0233 , H01L2224/0401 , H01L2224/05093 , H01L2224/05096 , H01L2224/0557 , H01L2224/1147 , H01L2224/13022 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2224/16 , H01L2224/16235 , H01L2225/06513 , H01L2225/06541 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01037 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/1305 , H01L2924/19041 , H01L2924/19043 , H01L2924/00 , H01L2224/05552
摘要： Provided are a semiconductor chip, a method of fabricating a semiconductor chip, and a semiconductor chip stack package. The semiconductor chip includes a semiconductor substrate and a semiconductor device on the semiconductor substrate. A dielectric covers the semiconductor device. A top metal is on the dielectric and electrically connected to the semiconductor device. A deep via penetrates the semiconductor substrate and the dielectric. An interconnection connects the deep via and the top metal electrically. A bump is in contact with the top metal and the interconnection.
摘要翻译：提供半导体芯片，制造半导体芯片的方法和半导体芯片堆叠封装。半导体芯片包括半导体衬底和半导体衬底上的半导体器件。电介质覆盖半导体器件。顶部金属在电介质上并与半导体器件电连接。深通孔穿透半导体衬底和电介质。一个互连电连接深孔和顶部金属。突起与顶部金属和互连件接触。

7. 发明授权

US07755158B2 Image sensor and method for manufacturing thereof 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07755158B2
公开(公告)日：2010-07-13
申请号：US11967407
申请日：2007-12-31
申请人： Min Hyung Lee
发明人： Min Hyung Lee
IPC分类号： H01L31/05
CPC分类号： H01L27/14636 , H01L27/14634 , H01L27/14665 , H01L27/14689
摘要： An image sensor includes a semiconductor substrate having a pixel region and a peripheral circuit region. An interlayer dielectric layer has metal wirings and a pad formed over the semiconductor substrate. A lower electrode is selectively formed over the metal wirings. A photo diode is formed over the interlayer dielectric layer of the pixel region. An upper electrode formed over the photo diode. Therefore, a vertical integration of the transistor and the photodiode may approach a fill factor to 100%, and provide higher sensitivity, implement more complicated circuitry without reducing sensitivity in each unit pixel, improve the reliability of the image sensor by preventing crosstalk, etc., between the pixels, and improve light sensitivity by increasing the surface area of the photo diode in the unit pixel.
摘要翻译：图像传感器包括具有像素区域和外围电路区域的半导体衬底。层间绝缘层具有形成在半导体衬底上的金属布线和焊盘。选择性地在金属布线上形成下电极。在像素区域的层间电介质层上形成光电二极管。形成在光电二极管上的上电极。因此，晶体管和光电二极管的垂直积分可以达到100％的填充因子，并提供更高的灵敏度，实现更复杂的电路，而不会降低每个单位像素的灵敏度，通过防止串扰等提高图像传感器的可靠性。，并且通过增加单位像素中的光电二极管的表面积来提高光的灵敏度。

8. 发明授权

US07635607B2 Image sensor and manufacturing method thereof 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07635607B2
公开(公告)日：2009-12-22
申请号：US11855624
申请日：2007-09-14
申请人： Min Hyung Lee
发明人： Min Hyung Lee
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L21/76849 , H01L24/13 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/14687 , H01L2924/01078 , H01L2924/01079 , H01L2924/12043 , H01L2924/13091 , H01L2924/19041 , H01L2924/00
摘要： An image sensor and fabricating method thereof are provided. A multi-layered interlayer insulating layer is formed on a substrate including a photodiode, and a metal line is formed in the interlayer insulating layer, such that the metal line passes through the interlayer insulating layer. A conductive barrier layer is formed on the metal line, a color filter array is formed on the interlayer insulating layer and the metal line, and microlenses are formed on the color filter array.
摘要翻译：提供了一种图像传感器及其制造方法。在包括光电二极管的基板上形成多层的层间绝缘层，在层间绝缘层中形成金属线，金属线通过层间绝缘层。在金属线上形成导电阻挡层，在层间绝缘层和金属线上形成滤色器阵列，在滤色器阵列上形成微透镜。

9. 发明申请

US20080308888A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THEREOF 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080308888A1
公开(公告)日：2008-12-18
申请号：US11967407
申请日：2007-12-31
申请人： Min Hyung Lee
发明人： Min Hyung Lee
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L27/14636 , H01L27/14634 , H01L27/14665 , H01L27/14689
摘要： An image sensor includes a semiconductor substrate having a pixel region and a peripheral circuit region. An interlayer dielectric layer has metal wirings and a pad formed over the semiconductor substrate. A lower electrode is selectively formed over the metal wirings. A photo diode is formed over the interlayer dielectric layer of the pixel region. An upper electrode formed over the photo diode. Therefore, a vertical integration of the transistor and the photodiode may approach a fill factor to 100%, and provide higher sensitivity, implement more complicated circuitry without reducing sensitivity in each unit pixel, improve the reliability of the image sensor by preventing crosstalk, etc., between the pixels, and improve light sensitivity by increasing the surface area of the photo diode in the unit pixel.
摘要翻译：图像传感器包括具有像素区域和外围电路区域的半导体衬底。层间绝缘层具有形成在半导体衬底上的金属布线和焊盘。选择性地在金属布线上形成下电极。在像素区域的层间电介质层上形成光电二极管。形成在光电二极管上的上电极。因此，晶体管和光电二极管的垂直积分可以达到100％的填充因子，并提供更高的灵敏度，实现更复杂的电路，而不会降低每个单位像素的灵敏度，通过防止串扰等提高图像传感器的可靠性。，并且通过增加单位像素中的光电二极管的表面积来提高光的灵敏度。

10. 发明授权

US08874263B2 Walking robot and control method thereof 有权
标题翻译：步行机器人及其控制方法
公开(公告)号：US08874263B2
公开(公告)日：2014-10-28
申请号：US13249950
申请日：2011-09-30
申请人： Ho Seong Kwak , Kyung Shik Roh , Woong Kwon , Min Hyung Lee , Joo Hyung Kim
发明人： Ho Seong Kwak , Kyung Shik Roh , Woong Kwon , Min Hyung Lee , Joo Hyung Kim
IPC分类号： B25J11/00 , B62D57/032
CPC分类号： B62D57/032 , Y10S901/01
摘要： A walking robot and a control method in which conversion between walking servo control methods is stably carried out. The walking robot includes a sensor unit to measure angles and torques of joints, and a control unit to calculate voltages applied in a Finite State Machine (FSM) control mode and a Zero Moment Point (ZMP) control mode according to the angles and torques of the joints to drive respective joint motors, to store last target joint angles in the FSM control mode during conversion from the FSM control mode to the ZMP control mode, and to perform a motion based on the FSM control mode by substituting the last target joint angles in the FSM control mode for target joint angles in the FSM control mode during conversion from the ZMP control mode to the FSM control mode, thereby performing stable conversion between walking servo control modes without joint sagging.
摘要翻译：一种行走机器人和其中稳定执行步行伺服控制方法之间的转换的控制方法。行走机器人包括用于测量关节角度和扭矩的传感器单元，以及控制单元，用于根据角度和转矩的角度和转矩来计算在有限状态机（FSM）控制模式和零点（ZMP）控制模式中施加的电压在从FSM控制模式到ZMP控制模式的转换期间，驱动各个关节电动机的关节，以在FSM控制模式中存储最后的目标关节角度，并且通过代替最后的目标关节角度来执行基于FSM控制模式的运动在FSM控制模式下，在从ZMP控制模式转换到FSM控制模式时，在FSM控制模式下的目标关节角度，从而在没有关节下垂的步行伺服控制模式之间进行稳定的转换。

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