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1. 发明授权

US07890620B2 Monitoring system and monitoring method 有权
标题翻译：监控系统及监控方式
公开(公告)号：US07890620B2
公开(公告)日：2011-02-15
申请号：US11194614
申请日：2005-08-02
申请人： Mineyoshi Masuda , Norihiro Kobayashi , Tomohiro Morimura
发明人： Mineyoshi Masuda , Norihiro Kobayashi , Tomohiro Morimura
IPC分类号： G06F15/173 , G06F11/00 , H04L12/26
CPC分类号： H04L43/12 , G06F11/3447 , G06F11/3495 , G06F2201/815 , G06F2201/86 , G06F2201/885 , H04L41/042 , H04L41/046
摘要： The monitoring technology capable of reducing total monitoring cost without degrading the monitoring capability in accordance with the configuration of the large-scale service system and quickly comprehending the state of the service system after the configuration change. A monitoring system in which information processing apparatuses constituting the service system are objects to be monitored has a monitoring manager program and a plurality of monitoring agent programs, and objects to be monitored having the same performance characteristics are sorted into the same groups. In each of the groups, parties where monitoring is carried out at a short monitoring interval and parties where the monitoring is carried out at a long monitoring interval are provided. The performance of objects to be monitored in the party of the long monitoring interval is estimated from the performance of the objects to be monitored in the party of the short monitoring interval.
摘要翻译：监控技术能够降低总体监控成本，而不会根据大型服务体系的配置降低监控能力，并在配置更改后快速了解业务系统的状态。构成服务系统的信息处理装置是要被监视的对象的监视系统具有监视管理程序和多个监视代理程序，并且将具有相同性能特征的被监视对象分类为相同的组。在每个组中，提供在短监视间隔进行监视的各方以及以较长监视间隔进行监视的各方。在长监视间隔的一方中要监视的对象的性能根据短监视间隔的一方要监视的对象的性能进行估计。

2. 发明申请

US20060277295A1 Monitoring system and monitoring method 有权
标题翻译：监控系统及监控方式
公开(公告)号：US20060277295A1
公开(公告)日：2006-12-07
申请号：US11194614
申请日：2005-08-02
申请人： Mineyoshi Masuda , Norihiro Kobayashi , Tomohiro Morimura
发明人： Mineyoshi Masuda , Norihiro Kobayashi , Tomohiro Morimura
IPC分类号： G06F15/173
CPC分类号： H04L43/12 , G06F11/3447 , G06F11/3495 , G06F2201/815 , G06F2201/86 , G06F2201/885 , H04L41/042 , H04L41/046
摘要： The monitoring technology capable of reducing total monitoring cost without degrading the monitoring capability in accordance with the configuration of the large-scale service system and quickly comprehending the state of the service system after the configuration change. A monitoring system in which information processing apparatuses constituting the service system are objects to be monitored has a monitoring manager program and a plurality of monitoring agent programs, and objects to be monitored having the same performance characteristics are sorted into the same groups. In each of the groups, parties where monitoring is carried out at a short monitoring interval and parties where the monitoring is carried out at a long monitoring interval are provided. The performance of objects to be monitored in the party of the long monitoring interval is estimated from the performance of the objects to be monitored in the party of the short monitoring interval.
摘要翻译：监控技术能够降低总体监控成本，而不会根据大型服务体系的配置降低监控能力，并在配置更改后快速了解业务系统的状态。其中构成服务系统的信息处理装置是要被监视的对象的监视系统具有监视管理程序和多个监视代理程序，并且具有相同性能特征的被监视对象被分类到相同的组中。在每个组中，提供在短监视间隔进行监视的各方以及以较长监视间隔进行监视的各方。在长监视间隔的一方中要监视的对象的性能根据短监视间隔的一方要监视的对象的性能进行估计。

3. 发明授权

US08097523B2 Method for manufacturing bonded wafer 有权
标题翻译：贴合晶圆的制造方法
公开(公告)号：US08097523B2
公开(公告)日：2012-01-17
申请号：US12866271
申请日：2009-02-17
申请人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Hiroji Aga , Nobuhiko Noto
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method for manufacturing a bonded wafer, including at least implanting at least one type of gas ion selected from a hydrogen ion and a rare gas ion from a surface of a bond wafer to form an ion-implanted layer in the wafer, bonding an ion-implanted surface of the bond wafer to a surface of a base wafer directly or through an insulator film, and then delaminating the bond wafer at the ion-implanted layer to fabricate a bonded wafer. A plasma treatment is applied to a bonding surface of one of the bond wafer and the base wafer to grow an oxide film, etching the grown oxide film is carried out, and bonding to the other wafer is performed. The method enables preventing defects by reducing particles on the bonding surface and performing strong bonding when effecting bonding directly or through the insulator film.
摘要翻译：一种用于制造接合晶片的方法，包括至少从接合晶片的表面注入选自氢离子和稀有气体离子的至少一种气体离子，以在晶片中形成离子注入层，将离子将接合晶片的植入表面直接或通过绝缘体膜的基底晶片的表面，然后在离子注入层分层接合晶片以制造接合晶片。将等离子体处理施加到接合晶片和基底晶片之一的接合表面以生长氧化膜，进行蚀刻生长的氧化物膜，并且进行与另一晶片的接合。该方法通过在直接或通过绝缘膜进行接合的同时还原接合表面上的颗粒并进行强结合来防止缺陷。

4. 发明授权

US07861421B2 Method for measuring rotation angle of bonded wafer 有权
标题翻译：测量接合晶片旋转角度的方法
公开(公告)号：US07861421B2
公开(公告)日：2011-01-04
申请号：US12452070
申请日：2008-07-03
申请人： Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
发明人： Norihiro Kobayashi , Tohru Ishizuka , Nobuhiko Noto
IPC分类号： G01B5/24 , G01B7/30
CPC分类号： H01L21/76251 , H01L22/12 , H01L23/544 , H01L2223/54426 , H01L2223/54493 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method for measuring a rotation angle of a bonded wafer, wherein a base wafer and a bond wafer each having a notch indicative of a crystal orientation formed at an outer edge thereof are bonded to each other at a desired rotation angle by utilizing the notches, a profile of the bond wafer having a reduced film thickness is observed with respect to a bonded wafer manufactured by reducing a film thickness of the bond wafer, a positional direction of the notch of the bond wafer seen from a center of the bonded wafer is calculated by utilizing the profile, an angle formed between the calculated positional direction of the notch of the bond wafer and a positional direction of the notch of the base wafer is calculated, and a rotation angle of the base wafer and the bond wafer is measured. As a result, the method for measuring a rotation angle of a bonded wafer that enables accurately and easily measuring the rotation angle of the notches of the base wafer and the bond wafer in a bonded wafer manufacturing line can be provided.
摘要翻译：本发明提供了一种用于测量接合晶片的旋转角度的方法，其中每个具有指示在其外边缘处形成的晶体取向的切口的基底晶片和接合晶片以期望的旋转角度彼此接合，利用缺口，观察到相对于通过降低接合晶片的膜厚而制造的接合晶片，从接合晶片的中心观察到的接合晶片的凹口的位置方向，观察到具有减小的膜厚度的接合晶片的轮廓通过利用轮廓来计算贴合晶片，计算出计算的接合晶片的凹口的位置方向与基底晶片的凹口的位置方向之间形成的角度，以及基底晶片和接合晶片的旋转角度被测量。结果，可以提供用于测量接合晶片的旋转角度的方法，其能够准确且容易地测量接合晶片制造线中的基底晶片和接合晶片的切口的旋转角度。

5. 发明申请

US20100314722A1 SOI WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SOI WAFER 有权
标题翻译： SOI WAFER，SEMICONDUCTOR DEVICE，AND METHOD FOR MANUIFACTURE OF SOI WAFER
公开(公告)号：US20100314722A1
公开(公告)日：2010-12-16
申请号：US12867922
申请日：2009-02-19
申请人： Tohru Ishizuka , Nobuhiko Noto , Norihiro Kobayashi , Masatake Nakano
发明人： Tohru Ishizuka , Nobuhiko Noto , Norihiro Kobayashi , Masatake Nakano
IPC分类号： H01L29/04 , H01L21/762
CPC分类号： H01L21/76254 , H01L29/045 , H01L29/78603
摘要： The present invention is an SOI wafer comprising at least: an SOI layer; a silicon oxide film; and a base wafer, wherein the SOI layer has a plane orientation of (100), and the base wafer has a resistivity of 100 Ω·cm or more and a plane orientation different from (100). As a result, there is provided the SOI wafer and the manufacturing method thereof that have no complicated manufacturing step, defects on a bonding interface which are not practically a problem in number and a high interface state density (Dit) for trapping carriers on an interface of a BOX layer and the base wafer.
摘要翻译：本发明是至少包括SOI层的SOI晶片; 氧化硅膜; 以及基底晶片，其中所述SOI层具有（100）的平面取向，并且所述基底晶片的电阻率为100Ω·cm·cm以上且平面取向不同于（100）。结果，提供了没有复杂的制造步骤的SOI晶片及其制造方法，接合界面上的缺陷在数量上几乎不成问题，并且用于在接口上捕获载体的高界面态密度（Dit）的BOX层和基底晶片。

6. 发明授权

US07521334B2 Method for producing direct bonded wafer and direct bonded wafer 有权
标题翻译：直接接合晶片和直接接合晶片的制造方法
公开(公告)号：US07521334B2
公开(公告)日：2009-04-21
申请号：US11659283
申请日：2005-11-29
申请人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
发明人： Norihiro Kobayashi , Toru Ishizuka , Tomohiko Ohta , Hiroji Aga , Yasuo Nagaoka
IPC分类号： H01L21/30
CPC分类号： H01L21/2007 , H01L21/76254
摘要： A method for producing a direct bonded wafer comprising: forming a thermal oxide film or a CVD oxide film on a surface of at least one of a bond wafer and a base wafer, and bonding the wafer to the other wafer via the oxide film; subsequently thinning the bond wafer to prepare a bonded wafer; and thereafter conducting a process of annealing the bonded wafer under an atmosphere including any one of an inert gas, hydrogen and a mixed gas of an inert gas and hydrogen so that the oxide film between the bond wafer and the base wafer is removed to bond the bond wafer directly to the base wafer. Thereby, there is provided a method for producing a direct bonded wafer in which generation of voids is reduced, and a direct bonded wafer with a low void count.
摘要翻译：一种直接接合晶片的制造方法，包括：在接合晶片和基底晶片中的至少一个的表面上形成热氧化膜或CVD氧化膜，并且经由所述氧化膜将所述晶片接合到所述另一方的晶片; 随后使接合晶片变薄以制备接合晶片; 然后在惰性气体，氢气和惰性气体与氢气的混合气体中的任何一种的气氛下进行退火接合晶片的工序，从而去除接合晶片和基底晶片之间的氧化膜，将晶片直接接合到基底晶片。因此，提供了一种制造空穴产生减少的直接接合晶片的方法和具有低空隙率的直接接合晶片。

7. 发明申请

US20060121291A1 Manufacturing process for annealed wafer and annealed wafer 审中-公开
标题翻译：退火晶圆和退火晶圆的制造工艺
公开(公告)号：US20060121291A1
公开(公告)日：2006-06-08
申请号：US11265129
申请日：2005-11-03
申请人： Yoshinori Hayamizu , Satoshi Tobe , Norihiro Kobayashi
发明人： Yoshinori Hayamizu , Satoshi Tobe , Norihiro Kobayashi
IPC分类号： B32B13/04 , H01L21/324
CPC分类号： H01L21/3225
摘要： There are provided a heat-treating method capable of suppressing generation of slip in a CZ silicon single crystal wafer having a diameter of mainly 300 mm or more even under high temperature heat treatment to annihilate grown-in defects in the vicinity of a surface of the wafer, and an annealed wafer having a DZ layer in a surface layer of the wafer and oxide precipitates in the bulk thereof at a high density which exert a high gettering effect. First heat treatment of a silicon single crystal wafer manufactured from a silicon single crystal ingot pulled by means of a Czochralski method is performed at a temperature in the range of 600 to 1100° C. to form oxide precipitates in the bulk of the wafer, and thereafter, second heat treatment is performed at a temperature in the range of 1150 to 1300° C.
摘要翻译：提供了即使在高温热处理下也能够抑制直径为300mm以上的CZ硅单晶晶片中的滑动产生的热处理方法，以消除在表面附近的生长缺陷晶片，并且在晶片的表面层中具有DZ层的退火晶片，其氧化物以其高密度析出，其发挥高吸杂效应。在由600℃〜1100℃的温度范围内进行利用切克劳斯基法（Czochralski method）拉伸的硅单晶锭制造的硅单晶晶片的第一次热处理，以在晶片本体中形成氧化物析出物，此后，在1150〜1300℃的温度下进行第二次热处理。

8. 发明授权

US06391796B1 Method for heat-treating silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US06391796B1
公开(公告)日：2002-05-21
申请号：US09530602
申请日：2000-05-03
申请人： Shoji Akiyama , Norihiro Kobayashi
发明人： Shoji Akiyama , Norihiro Kobayashi
IPC分类号： H01L2131
CPC分类号： H01L21/3247 , H01L21/3225 , H01L21/324
摘要： In a method for heat treatment of silicon wafers under a reducing atmosphere utilizing an RTA apparatus, in particular, microroughness on silicon wafer surfaces is reduced, thereby improving electric characteristics such as oxide dielectric breakdown voltage and mobility of carriers, and generation of slip dislocations and heavy metal contamination are suppressed. Thus, improvement of yield and productivity, and cost reduction are contemplated. According to the present invention, there is provided a method for heat treatment of a silicon wafer under a reducing atmosphere containing hydrogen using a rapid heating/rapid cooling apparatus, wherein a natural oxide film on a silicon wafer surface is removed, and then the silicon wafer is subjected to a heat treatment under an atmosphere of 100% hydrogen or an inert gas atmosphere containing 10% or more of hydrogen using a rapid heating/rapid cooling apparatus.
摘要翻译：在使用RTA装置的还原性气氛下对硅晶片进行热处理的方法中，特别地，硅晶片表面的微粗糙度降低，从而改善诸如氧化物介电击穿电压和载流子迁移率的电特性，以及滑移位错的产生，重金属污染被抑制。因此，考虑到产量和生产率的提高以及成本降低。根据本发明，提供一种使用快速加热/快速冷却装置在含氢气的还原气氛下对硅晶片进行热处理的方法，其中去除硅晶片表面上的自然氧化膜，然后将硅使用快速加热/快速冷却装置在100％氢气或含有10％以上氢气的惰性气体气氛的气氛下对晶片进行热处理。

9. 发明授权

US06245311B1 Method for heat treatment of silicon wafer and silicon wafer 有权
标题翻译：硅晶片和硅晶片的热处理方法
公开(公告)号：US06245311B1
公开(公告)日：2001-06-12
申请号：US09322704
申请日：1999-05-28
申请人： Norihiro Kobayashi , Shoji Akiyama , Toshihiko Miyano
发明人： Norihiro Kobayashi , Shoji Akiyama , Toshihiko Miyano
IPC分类号： C01B3300
CPC分类号： H01L21/3225
摘要： There is disclosed a method for heat treatment of a silicon wafer performed in a reducing atmosphere containing hydrogen by utilizing a rapid thermal annealer, wherein the heat treatment comprises a plurality of steps each of which is performed with a differently defined heat treatment condition. In this method, the heat treatment comprising a plurality of steps may be continuously performed without taking out the wafer from an RTA apparatus. The method of the present invention can, in particular, reduce COP density of the silicon wafer surface, reduce its microroughness and haze, and thus improve electric characteristics such as oxide dielectric breakdown voltage and mobility of carriers.
摘要翻译：公开了一种通过利用快速热退火炉在含有氢的还原气氛中进行的硅晶片的热处理方法，其中，热处理包括多个步骤，每个步骤以不同的热定形处理条件进行。在该方法中，可以连续地执行包括多个步骤的热处理而不从RTA装置中取出晶片。特别地，本发明的方法可以降低硅晶片表面的COP密度，降低其微观粗糙度和雾度，从而改善诸如氧化物介电击穿电压和载流子迁移率的电特性。

10. 发明授权

US06204188B1 Heat treatment method for a silicon wafer and a silicon wafer heat-treated by the method 失效
标题翻译：通过该方法对硅晶片和硅晶片进行热处理的热处理方法
公开(公告)号：US06204188B1
公开(公告)日：2001-03-20
申请号：US08966863
申请日：1997-11-10
申请人： Takao Abe , Norihiro Kobayashi
发明人： Takao Abe , Norihiro Kobayashi
IPC分类号： H01L21302
CPC分类号： H01L21/3225
摘要： There is disclosed a heat treatment method for a silicon wafer. A silicon wafer, on which a natural oxide film is formed at least at the surface thereof, is loaded directly into a heat treatment furnace heated to a temperature within a temperature range of 1000° C. to the melting point of silicon. Subsequently, the silicon wafer is heat-treated at a temperature within the temperature range, and the silicon wafer having a temperature within the temperature range is unloaded from the heat treatment furnace immediately after the heat treatment is completed. The heat treatment method can be performed at low cost, and can remove crystal defects within a short period of time, with no use of gas endangering safety such as hydrogen.
摘要翻译：公开了一种硅晶片的热处理方法。至少在其表面形成有天然氧化物膜的硅晶片被直接加载到加热到1000℃的温度到硅的熔点的热处理炉中。随后，在温度范围内的温度下对硅晶片进行热处理，并且在热处理完成后立即从热处理炉中卸载具有温度范围内的温度的硅晶片。热处理方法可以低成本地进行，并且可以在短时间内消除晶体缺陷，而不使用危及诸如氢的安全性的气体。

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