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1. 发明授权

US10063031B2 Method for manufacturing optical device 有权
公开(公告)号：US10063031B2
公开(公告)日：2018-08-28
申请号：US15460258
申请日：2017-03-16
申请人： Mitsubishi Electric Corporation
发明人： Kazuhisa Takagi
IPC分类号： H01L21/00 , H01S5/12 , G02B6/136 , H01S5/026 , H01S5/02 , G02B6/12
CPC分类号： H01S5/12 , G02B6/122 , G02B6/136 , G02B2006/12097 , G02B2006/12107 , G02B2006/12121 , G02B2006/12126 , G02B2006/12142 , G02B2006/12161 , G02B2006/12173 , G02B2006/12176 , H01S5/0203 , H01S5/026 , H01S5/0265 , H01S5/06258 , H01S5/1231 , H01S5/2275
摘要： A diffraction grating pattern is formed in the first insulating film on the active layer by electron beam lithography, and at the same time an end facet formation pattern whose end portion corresponds to a position of an emission end facet of the optical modulator is formed in the first insulating film on the optical absorption layer by electron beam lithography. A second insulating film is formed on the end facet formation pattern. The diffraction grating formation layer is etched using the first and second insulating films as masks to form a diffraction grating, and is embedded with an embedded layer. The second insulating film is removed. A third insulating film is formed on the diffraction grating and the embedded layer not to cover the end facet formation pattern. The optical absorption layer is etched using the first and third insulating films as masks to form the emission end facet.

2. 发明申请

US20140112610A1 SEMICONDUCTOR OPTICAL MODULATOR 审中-公开
标题翻译：半导体光学调制器
公开(公告)号：US20140112610A1
公开(公告)日：2014-04-24
申请号：US13905192
申请日：2013-05-30
申请人： Mitsubishi Electric Corporation
发明人： Kazuhisa Takagi
IPC分类号： G02F1/017
CPC分类号： G02F1/01708 , B82Y20/00 , G02F2001/0155
摘要： A semiconductor optical modulator includes a substrate, which has a first conductivity type, and a first electrode on a first main surface of the substrate. A first cladding layer having the first conductivity type, a transparent waveguide layer, a second cladding layer having the first conductivity type, an optical-absorption layer, and a third cladding layer having a second conductivity type, are sequentially laminated on a second main surface of the substrate. A ridge part is formed by removing a part of the third cladding layer and a part of the second cladding layer in a laminated direction. A second electrode on the ridge part is electrically connected to the third cladding layer.
摘要翻译：半导体光调制器包括具有第一导电类型的衬底和在衬底的第一主表面上的第一电极。具有第一导电类型的第一包层，透明波导层，具有第一导电类型的第二包层，光吸收层和具有第二导电类型的第三包层依次层压在第二主表面的基底。通过在层叠方向上去除第三包覆层的一部分和第二包层的一部分来形成脊部。脊部分上的第二电极电连接到第三包层。

3. 发明授权

US09042008B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US09042008B2
公开(公告)日：2015-05-26
申请号：US14210882
申请日：2014-03-14
申请人： Mitsubishi Electric Corporation
发明人： Takeshi Saito , Masakazu Takabayashi , Eitaro Ishimura , Tohru Takiguchi , Kazuhisa Takagi , Keisuke Matsumoto , Yoshifumi Sasahata
IPC分类号： H01S3/067 , H01S5/026 , H01S5/065 , H01S5/40 , H01S3/10 , H01S3/107 , H01S5/12 , H01S5/14 , H04J14/02
CPC分类号： H01S5/0265 , H01S3/067 , H01S3/10053 , H01S3/107 , H01S5/026 , H01S5/0654 , H01S5/12 , H01S5/14 , H01S5/4062 , H04B10/54 , H04B10/548 , H04J14/02
摘要： An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a phase regulator regulating phase of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the semiconductor lasers; a second optical waveguide optically connecting the wave coupling section to the phase regulator; an optical amplifying section amplifying output light of the phase regulator; and a third optical waveguide optically connecting an output of the phase regulator to the optical amplifying section. The phase regulator adjusts the phase of reflected light that returns to the semiconductor lasers to decrease line width of the light output by the semiconductor lasers.
摘要翻译：一种光学半导体器件包括：半导体激光器; 复用由半导体激光器输出的光的波耦合部分; 第一光波导分别将各个半导体激光器光耦合到波耦合部分; 相位调节器调节在位于所述光半导体器件中的反射点处反射并且返回到所述半导体激光器的反射光的相位; 将波耦合部分光耦合到相位调节器的第二光波导; 放大相位调节器的输出光的光放大部分; 以及第三光波导，其将相位调节器的输出光学连接到光放大部分。相位调节器调节返回到半导体激光器的反射光的相位，以减小半导体激光器的光输出的线宽。

4. 发明授权

US09698566B1 Optical module 有权
公开(公告)号：US09698566B1
公开(公告)日：2017-07-04
申请号：US15298274
申请日：2016-10-20
申请人： Mitsubishi Electric Corporation
发明人： Kazuhisa Takagi
IPC分类号： H01S5/00 , H01S5/0687 , H01S5/12 , H01S5/10 , H01S5/022 , H01S5/026 , H01S5/22 , H01S5/30 , H01S5/343 , H01S5/50 , H01S5/0625
CPC分类号： H01S5/0687 , H01S5/0064 , H01S5/0085 , H01S5/02252 , H01S5/0261 , H01S5/0265 , H01S5/0625 , H01S5/06258 , H01S5/06817 , H01S5/1025 , H01S5/12 , H01S5/22 , H01S5/227 , H01S5/3054 , H01S5/343 , H01S5/4012 , H01S5/50
摘要： An optical module includes: a semiconductor laser emitting laser light; an optical device having a butt joint interface; an optical amplifier amplifying the laser light passed through the optical device; an equivalent resonator length adjustor inserted between the optical amplifier and the optical device; a wavelength spectrum measuring device measuring a wavelength of light output from the optical amplifier; and a refractive index adjustment circuit controlling a current applied to the equivalent resonator length adjustor based on a result of measurement performed by the wavelength spectrum measuring device to adjust a refractive index of the equivalent resonator length adjustor. Parasitic oscillation light in a plurality of Fabry-Perot modes is generated as the butt joint interface is one of reflection ends. The refractive index adjustment circuit adjusts the refractive index so that none of peak wavelengths of the parasitic oscillation light coincides with an oscillation wavelength of the semiconductor laser.

5. 发明授权

US09147997B2 Optical semiconductor device 有权
标题翻译：光半导体器件
公开(公告)号：US09147997B2
公开(公告)日：2015-09-29
申请号：US14693942
申请日：2015-04-23
申请人： Mitsubishi Electric Corporation
发明人： Takeshi Saito , Masakazu Takabayashi , Eitaro Ishimura , Tohru Takiguchi , Kazuhisa Takagi , Keisuke Matsumoto , Yoshifumi Sasahata
IPC分类号： H01S5/026 , H04B10/54 , H04B10/25 , H04B10/548 , H04J14/02 , H01S3/067 , H01S5/40 , H01S5/065
CPC分类号： H01S5/0265 , H01S3/067 , H01S3/10053 , H01S3/107 , H01S5/026 , H01S5/0654 , H01S5/12 , H01S5/14 , H01S5/4062 , H04B10/54 , H04B10/548 , H04J14/02
摘要： An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a light intensity lowering section located in each of the first optical waveguides and lower light intensity of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the respective semiconductor lasers; to decrease line width of the light output by the semiconductor lasers.
摘要翻译：一种光学半导体器件包括：半导体激光器; 复用由半导体激光器输出的光的波耦合部分; 放大所述波耦合部的输出光的光放大部; 第一光波导分别将各个半导体激光器光耦合到波耦合部分; 位于所述第一光波导中的每一个中的光强降低部分和在位于所述光半导体器件中的反射点处反射并返回到所述半导体激光器的反射光的较低光强度; 以减少由半导体激光器输出的光的线宽。

6. 发明申请

US20150229407A1 OPTICAL SEMICONDUCTOR DEVICE 审中-公开
标题翻译：光学半导体器件
公开(公告)号：US20150229407A1
公开(公告)日：2015-08-13
申请号：US14693942
申请日：2015-04-23
申请人： Mitsubishi Electric Corporation
发明人： Takeshi Saito , Masakazu Takabayashi , Eitaro Ishimura , Tohru Takiguchi , Kazuhisa Takagi , Keisuke Matsumoto , Yoshifumi Sasahata
IPC分类号： H04B10/54 , H04J14/02 , H04B10/548
CPC分类号： H01S5/0265 , H01S3/067 , H01S3/10053 , H01S3/107 , H01S5/026 , H01S5/0654 , H01S5/12 , H01S5/14 , H01S5/4062 , H04B10/54 , H04B10/548 , H04J14/02
摘要： An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a light intensity lowering section located in each of the first optical waveguides and lower light intensity of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the respective semiconductor lasers; to decrease line width of the light output by the semiconductor lasers.
摘要翻译：一种光学半导体器件包括：半导体激光器; 复用由半导体激光器输出的光的波耦合部分; 放大所述波耦合部的输出光的光放大部; 第一光波导分别将各个半导体激光器光耦合到波耦合部分; 位于所述第一光波导中的每一个中的光强降低部分和在位于所述光半导体器件中的反射点处反射并返回到所述半导体激光器的反射光的较低光强度; 以减少由半导体激光器输出的光的线宽。

7. 发明申请

US20140198378A1 OPTICAL SEMICONDUCTOR DEVICE 审中-公开
标题翻译：光学半导体器件
公开(公告)号：US20140198378A1
公开(公告)日：2014-07-17
申请号：US14210882
申请日：2014-03-14
申请人： Mitsubishi Electric Corporation
发明人： Takeshi Saito , Masakazu Takabayashi , Eitaro Ishimura , Tohru Takiguchi , Kazuhisa Takagi , Keisuke Matsumoto , Yoshifumi Sasahata
IPC分类号： H01S3/067
CPC分类号： H01S5/0265 , H01S3/067 , H01S3/10053 , H01S3/107 , H01S5/026 , H01S5/0654 , H01S5/12 , H01S5/14 , H01S5/4062 , H04B10/54 , H04B10/548 , H04J14/02
摘要： An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; first optical waveguides respectively optically connecting respective semiconductor lasers to the wave coupling section; a phase regulator regulating phase of reflected light that is reflected at a reflecting point located in the optical semiconductor device and that returns to the semiconductor lasers; a second optical waveguide optically connecting the wave coupling section to the phase regulator; an optical amplifying section amplifying output light of the phase regulator; and a third optical waveguide optically connecting an output of the phase regulator to the optical amplifying section. The phase regulator adjusts the phase of reflected light that returns to the semiconductor lasers to decrease line width of the light output by the semiconductor lasers.
摘要翻译：一种光学半导体器件包括：半导体激光器; 复用由半导体激光器输出的光的波耦合部分; 第一光波导分别将各个半导体激光器光耦合到波耦合部分; 相位调节器调节在位于所述光半导体器件中的反射点处反射并且返回到所述半导体激光器的反射光的相位; 将波耦合部分光耦合到相位调节器的第二光波导; 放大相位调节器的输出光的光放大部分; 以及第三光波导，其将相位调节器的输出光学连接到光放大部分。相位调节器调节返回到半导体激光器的反射光的相位，以减小半导体激光器的光输出的线宽。

8. 发明授权

US10903619B2 Semiconductor package 有权
公开(公告)号：US10903619B2
公开(公告)日：2021-01-26
申请号：US16474753
申请日：2017-05-17
申请人： Mitsubishi Electric Corporation
发明人： Kazuhisa Takagi
IPC分类号： H01S5/062 , H01S5/022 , H01L31/173 , H01S5/40 , H01S5/0625 , G02B6/42 , H01L23/00 , H01B11/18
摘要： A multi-wavelength integrated device (5) including plural semiconductor lasers (6) and plural modulators (7) modulating output beams of the plural semiconductor lasers (6) respectively is mounted on the stem (1). Plural leads (10) penetrates through the stem (1) and are connected to the plural semiconductor lasers (6) and the plural modulators (7) respectively. Each lead (10) is a coaxial line in which plural layers are concentrically overlapped with one another. The coaxial line includes a high frequency signal line (12) transmitting a high frequency signal to the modulator (7), a GND line (14), and a feed line (16) feeding a DC current to the semiconductor laser (6). The high frequency signal line (12) is arranged at a center of the coaxial line. The GND line (14) and the feed line (16) are arranged outside the high frequency signal line (12).

9. 发明申请

US20150171592A1 MODULATOR INTEGRATED LASER DEVICE 审中-公开
标题翻译：调制器集成激光器件
公开(公告)号：US20150171592A1
公开(公告)日：2015-06-18
申请号：US14629626
申请日：2015-02-24
申请人： Mitsubishi Electric Corporation
发明人： Takeshi Yamatoya , Kazuhisa Takagi
IPC分类号： H01S5/00
CPC分类号： H01S5/0085 , B82Y20/00 , H01L2224/48091 , H01S3/10 , H01S5/0208 , H01S5/02276 , H01S5/0265 , H01S5/0422 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/227 , H01S5/3211 , H01S5/34306 , H01S2301/176 , H01L2924/00014
摘要： An integrated optical modulator and laser device includes a laser section, a modulator section for modulating the intensity of a laser beam produced by the laser section, and a separation section located between the laser section and the modulator section. The laser section includes a first anode electrode and a first cathode electrode. The modulator section includes a second anode electrode and a second cathode electrode. A lower cladding layer is integral to the laser section, the modulator section, and the separation section and the width of the lower cladding layer is narrowest in the separation section.
摘要翻译：集成光调制器和激光装置包括激光部分，用于调制由激光部分产生的激光束的强度的调制器部分和位于激光部分和调制器部分之间的分离部分。激光部包括第一阳极电极和第一阴极电极。调制器部分包括第二阳极电极和第二阴极电极。在分离部分中，下包层与激光部分，调制器部分和分离部分以及下包层的宽度最窄。

10. 发明申请

US20130208350A1 OPTICAL SEMICONDUCTOR DEVICE 审中-公开
标题翻译：光学半导体器件
公开(公告)号：US20130208350A1
公开(公告)日：2013-08-15
申请号：US13675449
申请日：2012-11-13
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Takeshi Saito , Masakazu Takabayashi , Eitaro Ishimura , Tohru Takiguchi , Kazuhisa Takagi , Keisuke Matsumoto , Yoshifumi Sasahata
IPC分类号： H01S3/067
CPC分类号： H01S5/0265 , H01S3/067 , H01S3/10053 , H01S3/107 , H01S5/026 , H01S5/0654 , H01S5/12 , H01S5/14 , H01S5/4062 , H04B10/54 , H04B10/548 , H04J14/02
摘要： An optical semiconductor device includes: semiconductor lasers; a wave coupling section multiplexing light output by the semiconductor lasers; an optical amplifying section amplifying output light of the wave coupling section; a first optical waveguide optically connecting respective semiconductor lasers to the wave coupling section; a second optical waveguide optically connecting the wave coupling section to the optical amplifying section; a third optical waveguide optically connected to an output of the optical amplifying section; and a phase regulator located in at least one of the first, second, and third optical waveguides, and regulating phase of reflected light that is reflected at a reflecting point in the optical semiconductor device and that returns to the semiconductor lasers. The phase regulator adjusts the phase of the reflected light to decrease line width of the light output by the semiconductor lasers.
摘要翻译：一种光学半导体器件包括：半导体激光器; 复用由半导体激光器输出的光的波耦合部分; 放大所述波耦合部的输出光的光放大部; 第一光波导，其将各个半导体激光器光耦合到所述波耦合部分; 第二光波导，其将所述波耦合部分光耦合到所述光放大部分; 光学连接到光放大部分的输出的第三光波导; 以及位于第一，第二和第三光波导中的至少一个中的相位调节器，并且调节在光半导体器件中的反射点处被反射并且返回到半导体激光器的反射光的相位。相位调节器调节反射光的相位以减小由半导体激光器输出的光的线宽。

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