专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11430721B2 Power module 有权
公开(公告)号：US11430721B2
公开(公告)日：2022-08-30
申请号：US17158331
申请日：2021-01-26
申请人： Mitsubishi Electric Corporation
发明人： Hiroshi Gokan , Masaru Fuku , Ryuichi Ishii
IPC分类号： H01L23/495 , H01L23/64 , H01L23/66
摘要： Two semiconductor elements and a capacitive element are located at vertices of a triangle. A first shortest path between the semiconductor elements, and a second shortest path and a third shortest path between the capacitive element and the two respective semiconductor elements, satisfy (first shortest path)≥(second shortest path) and ((first shortest path)2+(second shortest path)2)≥(third shortest path)2. A first electrically conductive metal pattern and a second electrically conductive metal pattern each have a thickness that is equal to or larger than two times a depth of a skin through which current flows owing to skin effect generated according to frequency characteristics of current paths having: a first resonance frequency obtained from capacitances and inductances between the semiconductor elements; a second resonance frequency between one of the semiconductor elements and the capacitive element; and a third resonance frequency between another one of the semiconductor elements and the capacitive element.

2. 发明授权

US10727189B2 Power semiconductor device 有权
公开(公告)号：US10727189B2
公开(公告)日：2020-07-28
申请号：US16324161
申请日：2017-08-28
申请人： Mitsubishi Electric Corporation
发明人： Noriyuki Besshi , Ryuichi Ishii , Masaru Fuku , Yuji Fujimoto , Yusuke Hirata
IPC分类号： H01L23/64 , H01L23/48 , H01L25/11 , H01L25/18 , H01L23/00 , H01L25/07 , H01L27/07 , H01L29/10 , H01L29/739 , H01L29/861
摘要： Provided is a power semiconductor device including a signal terminal and a power semiconductor element. The power semiconductor element is arranged on a substrate. The signal terminal includes a main body portion and a joint portion, and a part of the signal terminal is held by a terminal block. The joint portion includes a distal end portion and a base portion. The distal end portion includes a pad portion that is exposed from the terminal block and connected to a signal line. The base portion includes a thin portion in which a thickness in a vertical direction is set to be smaller than that of the pad portion. The thin portion has an upper surface that is formed at a position lower than an upper surface of the pad portion and is covered with a resin material forming the terminal block.

3. 发明授权

US10727167B2 Power semiconductor device and method for manufacturing power semiconductor device 有权
公开(公告)号：US10727167B2
公开(公告)日：2020-07-28
申请号：US16069192
申请日：2017-01-06
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Takayuki Yamada , Noriyuki Besshi , Yuya Muramatsu , Masaru Fuku , Dai Nakajima
IPC分类号： H01L23/492 , H01L29/12 , H01L21/52 , H01L23/00 , H01L29/417 , H01L29/66 , H01L21/48 , H01L29/739
摘要： This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

4. 发明授权

US11342281B2 Power semiconductor device and manufacturing method for power semiconductor device 有权
公开(公告)号：US11342281B2
公开(公告)日：2022-05-24
申请号：US16647886
申请日：2018-10-25
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Kohei Yabuta , Takayuki Yamada , Yuya Muramatsu , Noriyuki Besshi , Yutaro Sugi , Hiroaki Haruna , Masaru Fuku , Atsuki Fujita
IPC分类号： H01L23/00 , H01L21/48 , H01L23/13
摘要： A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

5. 发明授权

US10553559B2 Power semiconductor device 有权
公开(公告)号：US10553559B2
公开(公告)日：2020-02-04
申请号：US15741841
申请日：2016-09-29
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Noriyuki Besshi , Ryuichi Ishii , Masaru Fuku , Takayuki Yamada , Takao Mitsui
IPC分类号： H01L25/065 , H01L25/07 , H01L25/18 , H01L23/373 , H01L23/492 , H01L23/00 , H01L23/053 , H01L23/498
摘要： Provided is a power semiconductor device which is able to have improved connection reliability between a wiring line and an electrode of a power semiconductor element in comparison to conventional power semiconductor devices. This power semiconductor device is provided with: a semiconductor element; an insulating substrate having an electrode layer to which the semiconductor element is bonded; an external wiring line which is solder bonded to an upper surface electrode of the semiconductor element and has an end portion for external connection, said end portion being bent toward the upper surface; and a frame member which is affixed to the electrode layer of the insulating substrate. The frame member has a fitting portion that is fitted with the end portion for external connection; and the external wiring line has at least two projected portions that protrude toward the semiconductor element.

6. 发明申请

US20190006265A1 POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING POWER SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190006265A1
公开(公告)日：2019-01-03
申请号：US16069192
申请日：2017-01-06
申请人： MITSUBISHI ELECTRIC CORPORATION
发明人： Takayuki Yamada , Noriyuki Besshi , Yuya Muramatsu , Masaru Fuku , Dai Nakajima
IPC分类号： H01L23/492 , H01L21/48
摘要： This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

7. 发明授权

US10403559B2 Power semiconductor device 有权
公开(公告)号：US10403559B2
公开(公告)日：2019-09-03
申请号：US16078349
申请日：2016-05-26
申请人： Mitsubishi Electric Corporation
发明人： Masaru Fuku , Noriyuki Besshi , Ryuichi Ishii , Takayuki Yamada , Takao Mitsui , Komei Hayashi
IPC分类号： H01L23/52 , H01L23/373 , H01L23/48 , H01L21/3205 , H01L23/522 , H01L21/52 , H01L25/07 , H01L21/768 , H01L25/18 , H01L23/043 , H01L23/367 , H01L23/00
摘要： In a power semiconductor device, the thickness dimension of a protective film of a semiconductor element is made smaller than that of an upper electrode, so a protective film is not pressed by being pressurized from upward when bonded by a metal sintered body, and the force of tearing off the upper electrode riding on an inclined surface of the protective film does not act, so that no crack of the upper electrode occurs, thus maintaining the soundness of the semiconductor element. Also, a lead bonded by a solder to the upper electrode of the semiconductor element is made of a copper-Invar clad material, the linear expansion coefficient of which is optimized, and thereby it is possible to realize a durability superior to that of a heretofore known wire-bonded aluminum wiring.

8. 发明申请

US20190206811A1 POWER SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190206811A1
公开(公告)日：2019-07-04
申请号：US16324161
申请日：2017-08-28
申请人： Mitsubishi Electric Corporation
发明人： Noriyuki Besshi , Ryuichi Ishii , Masaru Fuku , Yuji Fujimoto , Yusuke Hirata
IPC分类号： H01L23/64 , H01L29/10 , H01L23/00 , H01L25/07 , H01L27/07 , H01L29/739 , H01L29/861
摘要： Provided is a power semiconductor device including a signal terminal and a power semiconductor element. The power semiconductor element is arranged on a substrate. The signal terminal includes a main body portion and a joint portion, and a part of the signal terminal is held by a terminal block. The joint portion includes a distal end portion and a base portion. The distal end portion includes a pad portion that is exposed from the terminal block and connected to a signal line. The base portion includes a thin portion in which a thickness in a vertical direction is set to be smaller than that of the pad portion. The thin portion has an upper surface that is formed at a position lower than an upper surface of the pad portion and is covered with a resin material forming the terminal block.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式