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1. 发明申请

US20150270186A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150270186A1
公开(公告)日：2015-09-24
申请号：US14566503
申请日：2014-12-10
申请人： Mitsubishi Electric Corporation
发明人： Masaomi MIYAZAWA , Mituharu TABATA , Takuya TAKAHASHI
IPC分类号： H01L23/053 , H01L23/16
CPC分类号： H01L23/053 , H01L23/16 , H01L24/36 , H01L24/40 , H01L25/072 , H01L2224/40137 , H01L2224/84205 , H01L2924/00014 , H01L2924/16151 , H01L2924/16195 , H01L2924/30107 , H01L2924/3025 , H01L2224/37099
摘要： An electrode includes an extending portion extending such that both ends thereof get into a first recessed portion and a second recessed portion provided in a first inner wall and a second inner wall, respectively, facing each other in a lateral direction of a case. The extent to which both the ends of the extending portion get into is set such that positions of both the ends thereof in a case where both the ends are narrowed toward a midpoint therebetween to reduce a length of the extending portion to 70% of the length of the extending portion exist between positions of the first and second inner walls in a case where the first and second inner walls are each narrowed toward a midpoint therebetween by 10% of the distance between the first and second inner walls.
摘要翻译：电极包括延伸部分，其延伸使得其两端分别设置在第一内壁和第二内壁中的第一凹部和第二内壁中，第一内壁和第二内壁在壳体的横向方向上彼此面对。延伸部的两端部进入的程度被设定为使得两端的两端在其两端之间的中点变窄的情况下的两端的位置，以将延伸部的长度缩短至长度的70％在第一内壁和第二内壁各自朝向中间点变窄的情况下，在第一和第二内壁之间的距离的10％的情况下，第一和第二内壁的位置之间存在延伸部分。

2. 发明申请

US20180005923A1 SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20180005923A1
公开(公告)日：2018-01-04
申请号：US15473824
申请日：2017-03-30
申请人： Mitsubishi Electric Corporation
发明人： Yasutaka SHIMIZU , Yoshitaka OTSUBO , Mituharu TABATA
IPC分类号： H01L23/495 , H01L23/00
CPC分类号： H01L23/49517 , H01L23/053 , H01L23/24 , H01L23/3735 , H01L23/49541 , H01L23/49562 , H01L23/49582 , H01L23/49811 , H01L24/48 , H01L2224/48175 , H01L2224/73265 , H01L2924/01029
摘要： A semiconductor device includes: a circuit pattern, at least one or more wires joined thereto, an electrode terminal joining thereto, and a semiconductor element. The electrode terminal includes a horizontally extending portion extending along a main surface and connected to the wire, and a bent portion at which an extending direction of the electrode terminal is changed relative to the horizontally extending portion. Each of the wires has joint portions at which each of the wires and the circuit pattern are joined to each other. In a plan view, the joint portions are located on an outside of a portion where each of the wires and the electrode terminal overlap each other.

3. 发明申请

US20150061731A1 DRIVING CIRCUIT AND SEMICONDUCTOR DEVICE 有权
标题翻译：驱动电路和半导体器件
公开(公告)号：US20150061731A1
公开(公告)日：2015-03-05
申请号：US14251703
申请日：2014-04-14
申请人： Mitsubishi Electric Corporation
发明人： Mituharu TABATA , Yuji MIYAZAKI
IPC分类号： H03K17/16
CPC分类号： H03K17/165 , H03K17/167
摘要： A driving circuit of the present invention drives a switching element connected to a main current circuit. The driving circuit includes a driving potion applying on/off-voltage to a gate of the switching element, a common inductor disposed in an interconnection part commonly connected to the driving circuit and a source side of the switching element in a loop formed of the main current circuit and the switching element, and a capacitor connected between the gate side and the source side on the driving portion side with respect to the common inductor.
摘要翻译：本发明的驱动电路驱动与主电流电路连接的开关元件。驱动电路包括对开关元件的栅极施加导通/截止电压的驱动部分，设置在与主驱动电路共同连接的布线部分中的公共电感器以及由主电路形成的环路中的开关元件的源极侧电流电路和开关元件，以及电容器，其相对于公共电感器连接在驱动部分侧的栅极侧和源极侧之间。

4. 发明申请

US20170117256A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME 审中-公开
公开(公告)号：US20170117256A1
公开(公告)日：2017-04-27
申请号：US15153762
申请日：2016-05-13
申请人： Mitsubishi Electric Corporation
发明人： Mituharu TABATA
IPC分类号： H01L25/07 , H01L29/861 , H01L29/739 , H01L23/00 , H01L23/373
摘要： A technique disclosed in the specification relates to a semiconductor device capable of minimizing restrictions on wire bonding activities and to a method for producing the semiconductor device. The semiconductor device of the present technique includes: a plurality of semiconductor chips disposed on a circuit pattern within a case defined by an outer frame in a plan view; and bonding wires for electrically connecting the semiconductor chips and the circuit pattern together. The semiconductor chips are arranged along a longer-side direction of the case. The bonding wires are strung along the longer-side direction of the case.

5. 发明申请

US20160284618A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160284618A1
公开(公告)日：2016-09-29
申请号：US14926805
申请日：2015-10-29
申请人： Mitsubishi Electric Corporation
发明人： Hideki TSUKAMOTO , Mituharu TABATA
IPC分类号： H01L23/055 , H01L23/14
CPC分类号： H01L23/055 , H01L23/552
摘要： A semiconductor device includes: a resin case that houses a semiconductor element; a parallel plate that is disposed inside the resin case while being connected with the semiconductor element, the parallel plate including two flat plates parallel to each other with an insulating material therebetween; and two electrodes that are each led out from an upper end of the parallel plate and are disposed on an upper surface of the resin case at a predetermined interval. Upper end portions of the two flat plates of the parallel plate between two electrode lead-out portions are bent toward the outside being a direction in which the upper end portions of the two flat plates become more distant from each other, the two electrodes being led out from the corresponding two electrode lead-out portions.
摘要翻译：半导体器件包括：容纳半导体元件的树脂壳体; 平行板，其与半导体元件连接而设置在树脂壳体的内部，平行板包括两个彼此平行的平板，其间具有绝缘材料; 和两个电极，每个电极从平行板的上端引出，并且以预定间隔设置在树脂外壳的上表面上。两个电极引出部之间的平行板的两个平板的上端部朝向外侧弯曲，两个平板的上端部彼此变得更远离的方向，两个电极被引导从相应的两个电极引出部分出来。

6. 发明申请

US20160095213A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160095213A1
公开(公告)日：2016-03-31
申请号：US14687371
申请日：2015-04-15
申请人： Mitsubishi Electric Corporation
发明人： Yoshitaka OTSUBO , Takuya TAKAHASHI , Masaomi MIYAZAWA , Tetsuo YAMASHITA , Tomohiro HIEDA , Mituharu TABATA
IPC分类号： H05K1/03 , H05K1/02 , H05K1/18
CPC分类号： H01L23/24 , H01L23/057 , H01L23/36 , H01L23/3735 , H01L23/49811 , H01L2224/48091 , H01L2224/49113 , H01L2224/73265 , H01L2924/181 , H01L2924/19107 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor device includes a semiconductor element and a ceramic circuit substrate on which the semiconductor element is mounted. The ceramic circuit substrate includes a ceramic substrate having one surface and the other surface facing each other, a metal circuit board joined to the one surface of the ceramic substrate and electrically connected to the semiconductor element, and a metal heat-dissipation plate joined to the other surface of the ceramic substrate. The metal circuit board is greater in thickness than the metal heat-dissipation plate. A surface of the metal heat-dissipation plate on a side opposite to the ceramic substrate is larger in area than a surface of the metal circuit board on a side opposite to the ceramic substrate. Thereby, a semiconductor device capable of suppressing warpage of the ceramic substrate can be achieved.
摘要翻译：半导体器件包括其上安装有半导体元件的半导体元件和陶瓷电路基板。陶瓷电路基板包括具有一个表面和另一个表面彼此相对的陶瓷基板，与陶瓷基板的一个表面接合并与半导体元件电连接的金属电路板，以及与该半导体元件连接的金属散热板陶瓷基板的其他表面。金属电路板的厚度大于金属散热板。与陶瓷基板相反一侧的金属散热板的表面的面积比金属电路板的与陶瓷基板相反一侧的面的面积大。由此，可以实现能够抑制陶瓷基板翘曲的半导体装置。

7. 发明申请

US20230090703A1 BIDIRECTIONAL SWITCH CIRCUIT AND POWER CONVERSION DEVICE 有权
公开(公告)号：US20230090703A1
公开(公告)日：2023-03-23
申请号：US17703908
申请日：2022-03-24
申请人： Mitsubishi Electric Corporation
发明人： Koichi MASUDA , Mituharu TABATA
IPC分类号： H03K17/687 , H03K17/567 , H02M7/797 , H01L25/07 , H01L25/18 , H01L23/00
摘要： According to the present disclosure, a bidirectional switch circuit includes a first semiconductor device including a first backside electrode electrically connected to a first pattern and a first upper surface electrode, a second semiconductor device including a second backside electrode electrically connected to a second pattern and a second upper surface electrode, a first diode including a first cathode electrode electrically connected to the first pattern and a first anode electrode, a second diode including a second cathode electrode electrically connected to the first pattern and a second anode electrode, first wiring electrically connecting the first upper surface electrode and the second anode electrode and second wiring electrically connecting the second upper surface electrode and the first anode electrode, wherein the first upper surface electrode, the second upper surface electrode, the first anode electrode and the second anode electrode are electrically connected to each other.

8. 发明申请

US20200011743A1 SEMICONDUCTOR DEVICE AND POWER CONVERSION DEVICE 审中-公开
公开(公告)号：US20200011743A1
公开(公告)日：2020-01-09
申请号：US16271412
申请日：2019-02-08
申请人： Mitsubishi Electric Corporation
发明人： Tetsuo YAMASHITA , Tomohiro HIEDA , Hiroki MURAOKA , Mituharu TABATA , Koichi MASUDA
IPC分类号： G01K7/16 , H03K17/567 , H02M7/537
摘要： According to the present invention, a semiconductor device includes a semiconductor chip, resistance of which changes in accordance with temperature, an external resistor connected in series with the semiconductor chip and a detector configured to detect, while a first voltage is applied between both ends of a series circuit formed by the semiconductor chip and the external resistor, a second voltage applied between both ends of the external resistor, wherein the detector calculates a temperature of the semiconductor chip from the second voltage.

9. 发明申请

US20160307813A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20160307813A1
公开(公告)日：2016-10-20
申请号：US14963701
申请日：2015-12-09
申请人： Mitsubishi Electric Corporation
发明人： Hideki TSUKAMOTO , Mituharu TABATA
IPC分类号： H01L23/043 , H01L23/492 , H01L23/08
CPC分类号： H01L23/043 , H01L25/07 , H01L2924/13055 , H01L2924/30107
摘要： A semiconductor device includes: a resin case that houses a semiconductor element; a parallel plate that is disposed inside the resin case while being connected with the semiconductor element, the parallel plate including two flat plates parallel to each other with an insulating material therebetween; two electrodes that are each led out from two electrode lead-out portions in an upper end of the parallel plate and are disposed on an upper surface of the resin case at a predetermined interval; and a metal plate that stands erect on the main surface of the flat plate in a region at the predetermined interval between the two electrode lead-out portions.
摘要翻译：半导体器件包括：容纳半导体元件的树脂壳体; 平行板，其与半导体元件连接而设置在树脂壳体的内部，平行板包括两个彼此平行的平板，其间具有绝缘材料; 两个电极分别从平行板的上端的两个电极引出部分引出，并以预定间隔设置在树脂壳体的上表面上; 以及在两个电极引出部分之间的预定间隔的区域中直立在平板的主表面上的金属板。

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