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    • 5. 发明授权
    • Semiconductor apparatus
    • 半导体装置
    • US09014654B2
    • 2015-04-21
    • US14055104
    • 2013-10-16
    • Murata Manufacturing Co., Ltd.
    • Tsutomu KoboriShigeki KoyaAkishige NakajimaYasushi Shigeno
    • H04B1/28H01P1/15H04B1/48
    • H01P1/15H04B1/48
    • A semiconductor apparatus includes multiple field effect transistors provided between an antenna terminal to be connected to an antenna and multiple external terminals through which RF signals are capable of being supplied and a voltage generating circuit. When the field effect transistors provided between one of the multiple external terminals and the antenna terminal are turned off, the voltage generating unit charges a capacitor via a resistor circuit by switching the polarity of the RF signal to be supplied to the other external terminal with respect to the control signal and outputs a voltage based on a sum of the charge voltage and the voltage of the control signal as the gate drive voltage. The resistor circuit includes a first resistor including positive temperature characteristics and a second resistor including negative temperature characteristics.
    • 半导体装置包括设置在要连接到天线的天线端子与能够提供RF信号的多个外部端子之间的多个场效应晶体管和电压产生电路。 当设置在多个外部端子中的一个外部端子和天线端子之间的场效应晶体管截止时,电压产生单元通过电阻电路对电容器充电,通过将要提供给另一个外部端子的RF信号的极性相对于 并输出基于充电电压和控制信号的电压之和的电压作为栅极驱动电压。 电阻电路包括具有正温度特性的第一电阻器和包括负温度特性的第二电阻器。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICE AND HIGH-FREQUENCY MODULE
    • 半导体器件和高频模块
    • US20140328223A1
    • 2014-11-06
    • US14361448
    • 2012-11-26
    • Murata Manufacturing Co., Ltd.
    • Eigo TangeShigeki KoyaYasushi ShigenoAkishige Nakajima
    • H04B1/52H04B1/44
    • H04B1/525H04B1/0064H04B1/44H04B15/04
    • Reduction of intermodulation distortion in a high-frequency switch is achieved. A semiconductor device (1) includes an antenna terminal (ANT_LB), plural external terminals (RX_LB, TX_LB, TRX_LB, TERM_LB), plural first high-frequency switches (101 to 104), and plural control terminals. Each first high-frequency switch includes plural first field-effect transistors, plural first resistors (Rg—1 to Rg—6) connected to the gate terminals of the first field-effect transistors, and a second resistor (Rc) disposed between the corresponding control terminal and the first resistors. The second resistor in the first high-frequency switch disposed between the first terminal supplied with an RF transmission signal and an RF reception signal of a frequency division duplex system and the antenna terminal is configured so that linearity of current-voltage characteristics thereof is higher than linearity of current-voltage characteristics of the first resistor.
    • 实现了降低高频开关中的互调失真。 半导体装置(1)包括天线端子(ANT_LB),多个外部端子(RX_LB,TX_LB,TRX_LB,TERM_LB),多个第一高频开关(101〜104)和多个控制端子。 每个第一高频开关包括多个第一场效应晶体管,连接到第一场效应晶体管的栅极端的多个第一电阻器(Rg-1至Rg-6)和设置在相应的第一场效应晶体管之间的第二电阻器(Rc) 控制端子和第一个电阻。 布置在提供有RF传输信号的第一端子与频分双工系统的RF接收信号之间的第一高频开关中的第二电阻器和天线端子被配置为使得电流 - 电压特性的线性度高于 第一电阻器的电流 - 电压特性的线性度。