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1. 发明授权

US10060029B2 Graphene manufacturing method 有权
公开(公告)号：US10060029B2
公开(公告)日：2018-08-28
申请号：US14862025
申请日：2015-09-22
申请人： National Tsing Hua University
发明人： Po-Yuan Teng , Po-Wen Chiu , Chun-Chieh Lu
IPC分类号： C23C16/26 , C23C16/44 , C23C16/50
CPC分类号： C23C16/26 , C23C16/44 , C23C16/50
摘要： In some aspects, a method for manufacturing graphene applied to grow graphene layers on an insulated surface of a work piece, includes: preparing a work piece; preparing a catalyst having a gasiform transition metal element; preparing a carbon feedstock; preparing hydrogen; mixing the carbon feedstock, the hydrogen and the catalyst over the work piece, the flow rate of the catalyst is between 4 sccm and 1,200 sccm; and warming the carbon feedstock, the hydrogen and the catalyst to the temperature between 200 degrees and 1,200 degrees centigrade, and maintaining the pressure inside the chamber between 1 mTorr and 800 Torr to make the catalyst source react with the carbon feedstock and the hydrogen so as to catalyze the decomposition of carbon feedstock to generate a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers directly on the insulated substrates of the work piece.

2. 发明申请

US20140044874A1 GRAPHENE MANUFACTURING SYSTEM AND THE METHOD THEREOF 审中-公开
标题翻译：石墨制造系统及其方法
公开(公告)号：US20140044874A1
公开(公告)日：2014-02-13
申请号：US13753223
申请日：2013-01-29
申请人： NATIONAL TSING HUA UNIVERSITY
发明人： Po-Yuan Teng , Po-Wen Chiu , Chun-Chieh Lu
IPC分类号： C23C16/26
CPC分类号： C23C16/26 , C23C16/44 , C23C16/50
摘要： The present invention discloses a graphene manufacturing system and the method thereof. In the prior arts, in order to grow graphene layers, a metal foil or thin film has to be prepared and disposed either on the surface or in the vicinity of the of the work piece so as to catalyze the decomposition of carbon feedstock nearby. In contrast, the present invention uses a fluid which contains catalyst metal ions as the source of catalysts and imports the catalytic particles from outside of the working chamber. The metal particles catalyze the decomposition of carbon feedstock at high temperature and cause the direct growth of graphene layers on insulator substrates. Therefore, the present invention is able to use cost-effective materials as the source of catalysts to grow graphene for practical applications.
摘要翻译：本发明公开了一种石墨烯制造系统及其方法。在现有技术中，为了生长石墨烯层，必须将金属箔或薄膜制备并放置在工件的表面或附近，以便催化附近的碳原料的分解。相反，本发明使用含有催化剂金属离子作为催化剂源的流体，并从工作室的外部导入催化剂颗粒。金属颗粒在高温下催化碳原料的分解，并导致石墨烯层在绝缘体基底上的直接生长。因此，本发明能够使用成本有效的材料作为催化剂的来源来生产用于实际应用的石墨烯。

3. 发明申请

US20160265105A1 GRAPHENE MANUFACTURING SYSTEM AND THE METHOD THEREOF 审中-公开
标题翻译：石墨制造系统及其方法
公开(公告)号：US20160265105A1
公开(公告)日：2016-09-15
申请号：US14862025
申请日：2015-09-22
申请人： National Tsing Hua University
发明人： Po-Yuan Teng , Po-Wen Chiu , Chun-Chieh Lu
IPC分类号： C23C16/26 , C23C16/50
CPC分类号： C23C16/26 , C23C16/44 , C23C16/50
摘要： The present invention discloses a graphene manufacturing system and the method thereof. In the prior arts, in order to grow graphene layers, a metal foil or thin film has to be prepared and disposed either on the surface or in the vicinity of the of the work piece so as to catalyze the decomposition of carbon feedstock nearby. In contrast, the present invention uses a fluid which contains catalyst metal ions as the source of catalysts and imports the catalytic particles from outside of the working chamber. The metal particles catalyze the decomposition of carbon feedstock at high temperature and cause the direct growth of graphene layers on insulator substrates. Therefore, the present invention is able to use cost-effective materials as the source of catalysts to grow graphene for practical applications.
摘要翻译：本发明公开了一种石墨烯制造系统及其方法。在现有技术中，为了生长石墨烯层，必须将金属箔或薄膜制备并放置在工件的表面或附近，以便催化附近的碳原料的分解。相反，本发明使用含有催化剂金属离子作为催化剂源的流体，并从工作室的外部导入催化剂颗粒。金属颗粒在高温下催化碳原料的分解，并导致石墨烯层在绝缘体基底上的直接生长。因此，本发明能够使用成本有效的材料作为催化剂的来源来生产用于实际应用的石墨烯。

4. 发明授权

US09183971B1 Layer by layer removal of graphene layers 有权
标题翻译：逐层去除石墨烯层
公开(公告)号：US09183971B1
公开(公告)日：2015-11-10
申请号：US14263310
申请日：2014-04-28
申请人： NATIONAL TSING HUA UNIVERSITY
发明人： Wan-Chen Chen , Wei-Jen Hsu , Po-Yuan Teng , Po-Wen Chiu
IPC分类号： H01B13/00 , H01B13/34 , H01B1/04
CPC分类号： H01B13/348 , C01B32/194 , H01B1/04 , H01L21/268 , H01L22/12 , H01L29/1606 , H01L31/1884 , Y02E10/50
摘要： A method for controllable layer-by-layer removal of graphene layers is provided. The method includes the steps of: disposing a single-layer or multi-layer graphene on a heat source, arranging graphene layer or layers in a sealed chamber filled with ozone gas, and removing a targeted area of graphene with a laser. The method provides low-temperature removal of graphene layer-by-layer. The heat source, laser, and the highly oxidizing ozone gas selectively control the removal of graphene layers.
摘要翻译：提供了可逐层去除石墨烯层的方法。该方法包括以下步骤：在热源上设置单层或多层石墨烯，在填充有臭氧气体的密封室中设置石墨烯层或层，并用激光去除目标区域的石墨烯。该方法逐层提供了石墨烯的低温去除。热源，激光和高度氧化的臭氧气体选择性地控制石墨烯层的去除。

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