会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 3. 发明申请
    • CASCODE TRANSISTOR CIRCUIT
    • CASCODE晶体管电路
    • US20160094218A1
    • 2016-03-31
    • US14835403
    • 2015-08-25
    • NXP B.V.
    • Ralf van OttenFranciscus SchoofsMatthias RoseHendrik Bergveld
    • H03K17/687
    • H03K17/687H03K17/04206H03K17/102H03K17/163H03K17/6871H03K2017/6875H03K2217/0081
    • A cascode transistor circuit comprising a depletion-mode switch in series with a normally-off switch between a drain output terminal and a source output terminal. The circuit also includes a controller comprising a controller output terminal configured to provide a normally-on control signal for a normally-on control terminal of the depletion-mode switch, wherein the normally-on control signal is independent of the normally-off control signal; a negative voltage source configured to provide a negative voltage to the normally-on control terminal of the depletion-mode switch; and a feedback capacitance between the drain output terminal and a control node in a circuit path between the controller output terminal and the normally-on control terminal of the depletion-mode switch.
    • 一种共源共栅晶体管电路,包括与漏极输出端子和源极输出端子之间的常关断开串联的耗尽型开关。 该电路还包括控制器,该控制器包括控制器输出端子,该控制器输出端子被配置为为耗尽型开关的常开控制端提供常开控制信号,其中常开控制信号独立于常关控制信号 ; 负电压源,被配置为向所述耗尽型开关的常开控制端子提供负电压; 以及在所述控制器输出端子与所述耗尽型开关的常开控制端子之间的电路路径中的所述漏极输出端子与所述控制节点之间的反馈电容。
    • 8. 发明申请
    • SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS
    • 半导体器件及相关方法
    • US20170062419A1
    • 2017-03-02
    • US15233785
    • 2016-08-10
    • NXP B.V.
    • Matthias RoseJan Sonsky
    • H01L27/088H01L29/16H02M3/158H01L29/872H01L21/8236H01L29/20H01L27/02
    • H01L27/0883H01L21/8236H01L27/0255H01L29/1608H01L29/2003H01L29/42316H01L29/513H01L29/778H01L29/872H02M3/158H03K17/6871
    • A semiconductor device comprising: a die-source-terminal, a die-drain-terminal and a die-gate-terminal; a semiconductor-die; an insulated-gate-depletion-mode-transistor provided on the semiconductor-die, the insulated-gate-depletion-mode-transistor comprising a depletion-source-terminal, a depletion-drain-terminal and a depletion-gate-terminal, wherein the depletion-drain-terminal is coupled to the die-drain-terminal and the depletion-gate-terminal is coupled to the die-source-terminal; an enhancement-mode-transistor comprising an enhancement-source-terminal, an enhancement-drain-terminal and an enhancement-gate-terminal, wherein the enhancement-source-terminal is coupled to the die-source-terminal, the enhancement-gate-terminal is coupled to the die-gate-terminal and the enhancement-drain-terminal is coupled to the depletion-source-terminal; and a clamp-circuit coupled between the depletion-source-terminal and the depletion-gate-terminal.
    • 一种半导体器件,包括:芯片 - 源极端子,芯片 - 漏极端子和晶体管 - 栅极端子; 半导体芯片; 设置在所述半导体管芯上的绝缘栅极耗尽型晶体管,所述绝缘栅极耗尽型晶体管包括耗尽源极端子,耗尽 - 漏极端子和耗尽栅极端子,其中 耗尽漏极端子耦合到管芯漏极端子,耗尽栅极端子耦合到管芯源极端子; 增强型晶体管,其包括增强源极端子,增强型 - 漏极端子和增强型栅极端子,其中所述增强源极端子耦合到所述管芯源极端子,所述增强型 - 端子耦合到晶体管栅极端子,并且增强漏极端子耦合到耗尽源极端子; 以及耦合在耗尽源极端与耗尽栅极端子之间的钳位电路。