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1. 发明授权

US08610186B2 Solid-state imaging device which can expand dynamic range 失效
标题翻译：可扩展动态范围的固态成像装置
公开(公告)号：US08610186B2
公开(公告)日：2013-12-17
申请号：US12883564
申请日：2010-09-16
申请人： Nagataka Tanaka
发明人： Nagataka Tanaka
IPC分类号： H01L31/062
CPC分类号： H01L27/14645 , H01L27/14609 , H01L27/14621 , H04N5/35563 , H04N5/37457 , H04N9/045 , H04N2209/045
摘要： According to one embodiment, a solid-state imaging device includes an area and color filters. The area includes pixels. Each of the pixels includes a first photodiode, a first read transistor, a second photodiode, a second read transistor, a floating diffusion, a reset transistor, and an amplifying transistor. The first photodiode performs photoelectric conversion. The first read transistor reads a signal charge. The second photodiode has a photosensitivity lower than the first photodiode. The second read transistor reads a signal charge. The floating diffusion stores the signal charges. The reset transistor resets a potential of the floating diffusion. The amplifying transistor amplifies the potential of the floating diffusion. The color filters include a first and a second filters. The relationship QSAT1 > QSAT2 is satisfied. When a saturation level of the first filter is denoted by QSAT1 and a saturation level of the second filter is denoted by QSAT2.
摘要翻译：根据一个实施例，固态成像装置包括区域和滤色器。该区域包括像素。每个像素包括第一光电二极管，第一读晶体管，第二光电二极管，第二读晶体管，浮动扩散，复位晶体管和放大晶体管。第一个光电二极管执行光电转换。第一个读取晶体管读取一个信号电荷。第二光电二极管的光敏性低于第一光电二极管。第二个读取晶体管读取信号电荷。浮动扩散存储信号电荷。复位晶体管复位浮动扩散的电位。放大晶体管放大浮动扩散的电位。滤色器包括第一和第二滤光片。满足QSAT1> QSAT2的关系。当QSAT1表示第一滤波器的饱和电平，并且由QSAT2表示第二滤波器的饱和电平时。

2. 发明授权

US08085326B2 Solid imaging device and driving method thereof 有权
标题翻译：固体成像装置及其驱动方法
公开(公告)号：US08085326B2
公开(公告)日：2011-12-27
申请号：US11553262
申请日：2006-10-26
申请人： Nagataka Tanaka
发明人： Nagataka Tanaka
IPC分类号： H04N5/208 , H04N5/335 , H04N3/14
CPC分类号： H04N5/335 , H04N5/3559
摘要： A solid imaging device includes a vertical signal line, a unit pixel including a photodiode which photoelectrically converts and stores incident light, an amplifying transistor which amplifies an input signal from the photodiode and outputs the amplified signal to the vertical signal line, and a reset transistor which resets a potential of a control electrode of the amplifying transistor, and a control circuit configured to maintain a state of a potential of the vertical signal line while the reset transistor is being driven.
摘要翻译：固体成像装置包括垂直信号线，包括光电转换和存储入射光的光电二极管的单位像素，放大来自光电二极管的输入信号的放大晶体管，并将放大的信号输出到垂直信号线;以及复位晶体管其复位放大晶体管的控制电极的电位，以及控制电路，被配置为在复位晶体管被驱动的同时保持垂直信号线的电位的状态。

3. 发明申请

US20110141333A1 SOLID-STATE IMAGING DEVICE AND METHOD FOR DRIVING THE SAME 失效
标题翻译：固态成像装置及其驱动方法
公开(公告)号：US20110141333A1
公开(公告)日：2011-06-16
申请号：US12970160
申请日：2010-12-16
申请人： Junji Naruse , Nagataka Tanaka
发明人： Junji Naruse , Nagataka Tanaka
IPC分类号： H04N5/335 , H01L31/0232
CPC分类号： H01L27/14645 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14632 , H01L27/1464 , H01L27/14689 , H04N5/2253 , H04N5/2254 , H04N5/35563 , H04N5/374 , H04N5/37457 , H04N9/045
摘要： According to one embodiment, a back side illumination type solid-state imaging device includes an imaging area in which a plurality of unit pixels each including a photoelectric conversion section and a signal scan circuit section are arranged on a semiconductor substrate, and a light illumination surface formed on a surface of the semiconductor substrate located opposite a surface of the semiconductor substrate on which the signal scan circuit section is formed, wherein the unit pixel comprises a high-sensitivity pixel and a low-sensitivity pixel with a lower sensitivity than the high-sensitivity pixel. And each of the high-sensitivity pixel and the low-sensitivity element comprises a first pixel separation layer located on the light illumination surface side in the semiconductor substrate to separate the pixels from each other.
摘要翻译：根据一个实施例，背面照明型固态成像装置包括其中在半导体衬底上布置有包括光电转换部分和信号扫描电路部分的多个单位像素的成像区域，以及光照明表面形成在与形成有所述信号扫描电路部的所述半导体基板的表面相对的所述半导体基板的表面上，所述单位像素包括高灵敏度像素和低灵敏度的低灵敏度像素，灵敏度像素。并且高敏感度像素和低灵敏度元件中的每一个包括位于半导体衬底中的光照明表面侧上的第一像素分离层，以将像素彼此分离。

4. 发明授权

US07554141B2 Solid-state image pickup device and method of manufacturing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US07554141B2
公开(公告)日：2009-06-30
申请号：US11392616
申请日：2006-03-30
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
IPC分类号： H01L31/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.
摘要翻译：一种固态摄像装置，包括：半导体衬底，其包括含有P型杂质的衬底主体和包含N型杂质的第一N型半导体层，所述第一N型半导体层设置在所述衬底主体上;以及包括含有p型杂质的第一P型半导体层，其位于基板主体上，多个光电转换部分由第二N型半导体层形成，该第二N型半导体层在相应位置彼此独立地设置在第一N型半导体层的表面部分和形成为围绕光/电转换部分的多个第二P型半导体层，其沿着设置在表面部分中的各个位置的元件隔离区域设置的第一N型半导体层，并且从第一N型半导体的表面部分连续地延伸层到第一P型半导体层的表面部分。

5. 发明申请

US20060219867A1 Solid-state image pickup device and method of manufacturing the same 有权
公开(公告)号：US20060219867A1
公开(公告)日：2006-10-05
申请号：US11392616
申请日：2006-03-30
申请人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
发明人： Tetsuya Yamaguchi , Hiroshige Goto , Hirofumi Yamashita , Hisanori Ihara , Ikuko Inoue , Nagataka Tanaka
IPC分类号： H01L27/00 , H01L31/00
CPC分类号： H01L27/14689 , H01L27/1463
摘要： A solid-state image pickup device comprising a semiconductor substrate which comprises a substrate body containing P-type impurities and a first N-type semiconductor layer containing N-type impurities, the first N-type semiconductor layer being provided on the substrate body, and including a first P-type semiconductor layer which contains p-type impurities, and which is located on the substrate body, a plurality of optical/electrical conversion portions formed of second N-type semiconductor layers which are provided independently of each other in respective positions in a surface portion of the first N-type semiconductor layer, and a plurality of second P-type semiconductor layers which are formed to surround the optical/electrical conversion portions, which are provided along element isolation regions provided in respective positions in the surface portion of the first N-type semiconductor layer, and which continuously extend from the surface portion of the first N-type semiconductor layer to a surface portion of the first P-type semiconductor layer.

6. 发明申请

US20060187553A1 Solid-state imaging device equipped with light converging micro-lenses and camera apparatus using the same 审中-公开
公开(公告)号：US20060187553A1
公开(公告)日：2006-08-24
申请号：US11358410
申请日：2006-02-22
申请人： Nagataka Tanaka , Masatoki Nakabayashi , Kenichi Nakamura
发明人： Nagataka Tanaka , Masatoki Nakabayashi , Kenichi Nakamura
IPC分类号： G02B27/10
CPC分类号： H01L27/14627 , H01L27/14625 , H01L27/14685
摘要： A solid-state imaging device includes a plurality of photo receivers arranged in a two-dimensional array on a semiconductor substrate, the photo receivers receiving exit light from an imaging optical system; and a plurality of condensing lenses arranged over the said plurality of photo receivers, respectively. At least either the plurality of condensing lenses or the plurality of photo receivers are arranged at smaller pitches where an absolute value of an exit pupil position in the imaging optical system is large and at greater pitches where the absolute value of the exit pupil position is small.

7. 发明申请

US20060046369A1 Semiconductor device with burried semiconductor regions 失效
标题翻译：具有埋半导体区域的半导体器件
公开(公告)号：US20060046369A1
公开(公告)日：2006-03-02
申请号：US11210681
申请日：2005-08-25
申请人： Hisanori Ihara , Nagataka Tanaka , Hiroshige Goto
发明人： Hisanori Ihara , Nagataka Tanaka , Hiroshige Goto
IPC分类号： H01L21/76 , H01L21/8238
CPC分类号： H01L27/14609 , H01L27/14601 , H01L27/14689
摘要： A solid-state image sensor having a well of a first conductivity type; a photoelectric conversion region having a second conductivity type formed in the well storing charges obtained from a photoelectric conversion; a drain region having the second conductivity type formed in the well apart from a surface of the well; and a gate electrode formed on the surface of the well via a gate insulator, the gate electrode transferring the charges from the photoelectric conversion region to the drain region. Alternatively, a transistor includes a first semiconductor region having a first conductivity type; second and third semiconductor regions having a second conductivity type formed in the first semiconductor region, the second and third semiconductor regions being separated from each other by a portion of the first semiconductor region serving as a channel region; an insulator layer provided on a surface of the first semiconductor region in contact with the channel region; a gate electrode provided on the insulator layer; and the first semiconductor region includes a shield semiconductor region of the first conductivity type disposed between the surface of the first semiconductor region and at least one of the second and third semiconductor regions such that the at least one of the second and third semiconductor regions is sandwiched between the shield region and the first semiconductor region.
摘要翻译：一种具有第一导电类型的阱的固态图像传感器; 在由光电转换得到的储存电荷中形成的具有第二导电类型的光电转换区; 具有第二导电类型的漏极区域形成在与阱的表面分离的井中; 以及通过栅极绝缘体在阱的表面上形成的栅电极，栅电极将电荷从光电转换区域传送到漏区。或者，晶体管包括具有第一导电类型的第一半导体区域; 具有形成在第一半导体区域中的第二导电类型的第二和第三半导体区域，第二和第三半导体区域被用作沟道区域的第一半导体区域的一部分彼此分离; 设置在与所述沟道区域接触的所述第一半导体区域的表面上的绝缘体层; 设置在所述绝缘体层上的栅电极; 并且第一半导体区域包括设置在第一半导体区域的表面和第二和第三半导体区域中的至少一个之间的第一导电类型的屏蔽半导体区域，使得第二和第三半导体区域中的至少一个被夹在在所述屏蔽区域和所述第一半导体区域之间。

8. 发明授权

US5506429A CCD image sensor with stacked charge transfer gate structure 失效
标题翻译： CCD图像传感器具有堆叠的电荷转移门结构
公开(公告)号：US5506429A
公开(公告)日：1996-04-09
申请号：US208750
申请日：1994-03-11
申请人： Nagataka Tanaka , Nobuo Nakamura , Yoshiyuki Matsunaga , Shinji Ohsawa , Michio Sasaki , Hirofumi Yamashita , Ryohei Miyagawa
发明人： Nagataka Tanaka , Nobuo Nakamura , Yoshiyuki Matsunaga , Shinji Ohsawa , Michio Sasaki , Hirofumi Yamashita , Ryohei Miyagawa
IPC分类号： H01L27/148 , H04N5/335 , H04N5/341 , H04N5/357 , H04N5/3728 , H01L29/765
CPC分类号： H01L27/14831
摘要： A CCD imager has an array of rows and columns of picture elements on a semiconductor substrate. A vertical charge transfer gate section extends in a first direction on the substrate to be associated with the columns. The transfer gate section includes CCD channels in the substrate, and insulated transfer gate electrodes overlying these CCD channels. A plurality of buffer electrodes are formed at a first level over the substrate surface to overlie the transfer gate electrodes. A plurality of shunt wires are formed at a second level over the substrate surface to overlie the buffer electrodes. The charge transfer gate electrodes and the buffer electrodes are connected with each other by first contact holes. The buffer electrodes and the shunt wires are coupled together by second contact holes. The second contact holes are distributed so that the repeat period thereof as defined at least in a second direction transverse to the first direction on the substrate is equal to or less than two picture elements, whereby their spatial frequency at least in the second direction is half the sampling frequency of photoconversion in the CCD imager, or more.
摘要翻译： CCD成像器在半导体衬底上具有一列行和列的像素。垂直电荷转移栅极部分在衬底上的第一方向上延伸以与柱相关联。传输门部分包括衬底中的CCD通道，以及覆盖这些CCD通道的绝缘传输栅电极。多个缓冲电极形成在衬底表面上的第一层上以覆盖传输栅电极。在衬底表面上的第二层上形成多个分流电线以覆盖缓冲电极。电荷转移栅电极和缓冲电极通过第一接触孔相互连接。缓冲电极和并联线通过第二接触孔耦合在一起。分布第二接触孔，使得其至少沿与衬底上的第一方向横切的第二方向限定的重复周期等于或小于两个图像元素，由此其至少在第二方向上的空间频率为一半 CCD成像仪中光电转换的采样频率，或更多。

9. 发明授权

US08754493B2 Solid-state imaging device and solid-state imaging device designing method 有权
标题翻译：固态成像装置和固态成像装置的设计方法
公开(公告)号：US08754493B2
公开(公告)日：2014-06-17
申请号：US13558495
申请日：2012-07-26
申请人： Nagataka Tanaka
发明人： Nagataka Tanaka
IPC分类号： H01L31/0232
CPC分类号： G02B3/0056 , H01L27/14605 , H01L27/14623 , H01L27/14627 , H01L27/14685 , H04N5/2257
摘要： A solid-state imaging device includes light receiving sections which are arranged in an image area on a semiconductor substrate at the same pitch and which light exiting from an imaging optical system enters, condensing lenses respectively arranged above the light receiving sections, and light shielding sections each of which is provided at one end of each of the light receiving sections. The condensing lenses are arranged in a peripheral portion in a first direction in the image area at a first pitch, and arranged in a peripheral portion in a second direction opposite the first direction at a second pitch which is smaller than the first pitch.
摘要翻译：固态成像装置包括：光接收部，其以相同的间距配置在半导体基板的图像区域中，从成像光学系统射出的光入射到分别配置在受光部上方的聚光透镜;以及遮光部其每一个设置在每个光接收部分的一端。聚光透镜以第一间距在图像区域中沿第一方向布置在周边部分中，并且以比第一间距小的第二间距以与第一方向相反的第二方向布置在周边部分中。

10. 发明申请

US20110234871A1 SOLID-STATE IMAGING DEVICE 失效
标题翻译：固态成像装置
公开(公告)号：US20110234871A1
公开(公告)日：2011-09-29
申请号：US13052182
申请日：2011-03-21
申请人： Hisayuki TARUKI , Nagataka Tanaka
发明人： Hisayuki TARUKI , Nagataka Tanaka
IPC分类号： H04N5/335
CPC分类号： H04N5/3559 , H01L27/14609 , H04N5/3698
摘要： According to one embodiment, the pixel driving circuit causes the amplifying transistor to form a source follower circuit without applying a bias voltage to the vertical signal line and connects the FD to the power source. Thereafter, the pixel driving circuit separates the current source from the vertical signal line to cancel the source follower circuit, applies a bias voltage to the vertical signal line so that the voltage of the FD is raised when the brightness of the subject is higher than the reference value, and the voltage of the FD is lowered when the brightness of the subject is lower than the reference value, and turns on the read transistor. The pixel driving circuit turns off the read transistor, and then connects the current source to the vertical signal line, and causes the amplifying transistor to form the source follower circuit.
摘要翻译：根据一个实施例，像素驱动电路使放大晶体管形成源极跟随器电路，而不向垂直信号线施加偏置电压，并将FD连接到电源。此后，像素驱动电路将电流源与垂直信号线分离以抵消源极跟随器电路，向垂直信号线施加偏置电压，使得当被摄体的亮度高于参考值，并且当被摄体的亮度低于参考值时，FD的电压降低，并且接通读取的晶体管。像素驱动电路关闭读取晶体管，然后将电流源连接到垂直信号线，并使放大晶体管形成源极跟随器电路。

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