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1. 发明授权

US09530930B2 Method of fabricating semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US09530930B2
公开(公告)日：2016-12-27
申请号：US14762842
申请日：2013-12-19
申请人： NANYANG TECHNOLOGICAL UNIVERSITY
发明人： Wei Liu , Zi-Hui Zhang , Zhengang Ju , Xueliang Zhang , Yun Ji , Swee Tiam Tan , Xiao Wei Sun , Hilmi Volkan Demir
IPC分类号： H01L33/00 , H01L33/62
CPC分类号： H01L33/0095 , H01L33/0079 , H01L33/62 , H01L2933/0016 , H01L2933/0066
摘要： Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques. Due to the small area of the islands, the stress generated between LED layer and metal islands is much less significant. Furthermore, due to the island metal plating and through the application of temporary supporting carriers the LED dies will be separated at the end of the fabrication process automatically or simply by applying slight mechanical stress or stretching the adhesive tape. This advantage avoids the metal dicing step and reduces the possibility of metal contamination and leakage current generation. Therefore, high yield and low cost will be realized using this novel method in LED production.
摘要翻译：由于高效率和高功率处理的优点，垂直大功率LED是普通照明应用的技术选择。然而，到目前为止报道的垂直LED制造技术涉及晶片级金属基板的取代，这可能由于金属基板和LED层之间的失配而引起大的应力。此外，必须将金属基板切割成分离的LED管芯，这可能导致金属污染并因此增加漏电流。这些因素将降低LED生产的产量，并增加成本。本发明公开了一种用于制造GaN垂直高功率LED的新颖方法和/或用于制造与大规模生产条件兼容的GaN垂直高功率LED的新颖方法。本发明的新颖之处在于，借助于图案形成技术进行岛金属电镀。由于岛屿面积小，LED层和金属岛之间产生的应力要小得多。此外，由于岛金属电镀和通过施加临时支撑载体，LED管芯将在制造过程结束时自动或简单地通过施加轻微的机械应力或拉伸粘合带而分离。这个优点避免了金属切割步骤，并降低了金属污染和泄漏电流产生的可能性。因此，在LED生产中使用这种新颖的方法将实现高产量和低成本。

2. 发明申请

US20160307959A1 LIGHT-EMITTING DEVICE AND METHOD OF FORMING THE SAME 审中-公开
标题翻译：发光装置及其形成方法
公开(公告)号：US20160307959A1
公开(公告)日：2016-10-20
申请号：US15100748
申请日：2014-11-18
申请人： Nanyang Technological University
发明人： Xueliang Zhang , Zi-Hui Zhang , Yun Ji , Zhen Gang Ju , Wei Liu , Swee Tiam Tan , Xiaowei Sun , Hilmi Volkan Demir
IPC分类号： H01L27/15 , H01L33/32 , H01L33/22 , H01L33/44 , H01L33/38
CPC分类号： H01L27/156 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/44 , H01L2933/0016
摘要： A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.
摘要翻译：发光器件可以包括有源层。发光器件可以包括第一导电类型的第一半导体层。第一半导体层可以与有源层物理接触。发光器件还可以包括第二导电类型的第二半导体层。第二半导体层可以与有源层物理接触并与第一导电层相对。发光器件还可以包括与第一半导体层的第一侧物理接触的第一电极。发光装置还可以包括与第一半导体层的第二侧物理接触的第二电极。第一半导体层的第二面可以与第一半导体层的第一侧不同。发光器件还可以包括与第二半导体层物理接触的第三电极。

3. 发明授权

US10121822B2 Light-emitting device and method of forming the same 有权
公开(公告)号：US10121822B2
公开(公告)日：2018-11-06
申请号：US15100748
申请日：2014-11-18
申请人： Nanyang Technological University
发明人： Xueliang Zhang , Zi-Hui Zhang , Yun Ji , Zhen Gang Ju , Wei Liu , Swee Tiam Tan , Xiaowei Sun , Hilmi Volkan Demir
IPC分类号： H01L33/48 , H01L27/15 , H01L33/38 , H01L33/22 , H01L33/32 , H01L33/44
摘要： A light-emitting device may include an active layer. The light-emitting device may include a first semiconductor layer of a first conductivity type. The first semiconductor layer may be in physical contact with the active layer. The light-emitting device may also include a second semiconductor layer of a second conductivity type. The second semiconductor layer may be in physical contact with the active layer and opposite the first conductive layer. The light-emitting device may further include a first electrode in physical contact with a first side of the first semiconductor layer. The light-emitting device may additionally include a second electrode in physical contact with a second side of the first semiconductor layer. The second side of the first semiconductor layer may be different from the first side of the first semiconductor layer. The light-emitting device may also include a third electrode in physical contact with the second semiconductor layer.

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