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1. 发明授权

US09196483B1 Carrier channel with element concentration gradient distribution and fabrication method thereof 有权
标题翻译：具有元素浓度梯度分布的载流子通道及其制造方法
公开(公告)号：US09196483B1
公开(公告)日：2015-11-24
申请号：US14483169
申请日：2014-09-11
申请人： NATIONAL TSING HUA UNIVERSITY
发明人： Ming-Chang Lee , Chih-Kuo Tseng
IPC分类号： H01L21/76 , H01L21/02 , H01L29/36 , H01L29/10
CPC分类号： H01L21/02667 , H01L21/02381 , H01L21/0245 , H01L21/02452 , H01L21/0251 , H01L21/02532 , H01L21/02535 , H01L21/02642 , H01L29/1029 , H01L29/1054 , H01L29/36
摘要： The present disclosure provides a carrier channel with an element concentration gradient distribution. The carrier channel includes a substrate and a carrier channel structure. The carrier channel structure is stacked on the substrate, wherein a ratio of a height and a width of the carrier channel is greater than 1, and the carrier channel is crystallized from the contact surface by a rapid melting growth process, thus the carrier channel structure has the element concentration gradient distribution.
摘要翻译：本公开提供了具有元素浓度梯度分布的载波信道。载体通道包括基底和载体通道结构。载体沟道结构层叠在基板上，其中载流子通道的高度和宽度的比率大于1，并且通过快速熔融生长工艺从载体通道从接触表面结晶，因此载流子通道结构具有元素浓度梯度分布。

2. 发明授权

US08846503B1 Self-aligned and lateral-assembly method for integrating heterogeneous material structures on the same plane 有权
标题翻译：用于在同一平面上整合异质材料结构的自对准和横向组装方法
公开(公告)号：US08846503B1
公开(公告)日：2014-09-30
申请号：US13975524
申请日：2013-08-26
申请人： National Tsing Hua University
发明人： Ming-Chang Lee , Chih-Kuo Tseng
IPC分类号： H01L21/20 , H01L21/02
CPC分类号： H01L21/7624 , H01L21/02381 , H01L21/02455 , H01L21/02639 , H01L21/02645 , H01L21/8258
摘要： The present invention relates to a self-aligned and lateral-assembly method for integrating heterogeneous material structures on the same plane. By using this method, two semiconductor materials heterogeneous to each other can be laterally assembled in a self-alignment way, without using any epitaxial buffer layers or gradient buffer layers. Therefore, when applying this method to fabricating an electronic device having heterojunction, not only the manufacture cost can be effectively reduced, but the difficulty of manufacturing process can also be overcome. Moreover, in this method, one amorphous heterogeneous semiconductor material would laterally grow to a crystal semiconductor material through epitaxy after being treated the rapid melting growth (RMG) process, and the epitaxial crystal semiconductor material would then be laterally assembled with the other one semiconductor material on an identical substrate, for carrying out the lateral assembly of the two heterogeneous semiconductor materials by using the self-alignment way and the smallest thermal budget.
摘要翻译：本发明涉及用于在同一平面上整合异质材料结构的自对准和横向组装方法。通过使用这种方法，可以以自对准的方式横向地组装两个彼此异质的半导体材料，而不使用任何外延缓冲层或梯度缓冲层。因此，当应用该方法制造具有异质结的电子装置时，不仅可以有效地降低制造成本，而且可以克服制造工艺的难度。此外，在这种方法中，一种非晶异质半导体材料在经过快速熔融生长（RMG）工艺处理之后将通过外延横向生长成晶体半导体材料，然后外延晶体半导体材料将与另一种半导体材料横向组装在相同的基板上，通过使用自对准方式和最小的热预算来执行两种异质半导体材料的横向组装。

3. 发明授权

US09366817B2 Method of integrating all active and passive optical devices on silicon-based integrated circuit 有权
标题翻译：在硅基集成电路上集成所有有源和无源光器件的方法
公开(公告)号：US09366817B2
公开(公告)日：2016-06-14
申请号：US14308797
申请日：2014-06-19
申请人： National Tsing Hua University
发明人： Ming-Chang Lee , Chih-Kuo Tseng
IPC分类号： H01L21/00 , G02B6/136 , G02B6/13 , G02B6/43 , G02B6/12 , H01L31/0232 , H01L27/12
CPC分类号： G02B6/136 , G02B6/131 , G02B6/43 , G02B2006/12169 , H01L27/1203 , H01L31/02325
摘要： A method is provided to integrate all active and passive integrated optical devices on a silicon (Si)-based integrated circuit (IC). A Si-based substrate, instead of a Si-on-insulator (SOI) substrate, is used for integrating the devices. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems on integrating the electric circuit and the optical devices. The present invention can be used to develop a proactive optical transceivers on a standard chip; or, to fully and compatibly integrate all devices on a circuit for an optical communication chip.
摘要翻译：提供了一种将所有有源和无源集成光学器件集成在基于硅（Si）的集成电路（IC）上的方法。代替绝缘体上硅（SOI）衬底的Si基衬底用于集成器件。因此，成本下降，散热效率提高。此外，快速熔融生长（RMG）用于解决电路和光学器件的集成问题。本发明可用于在标准芯片上开发主动式光收发器; 或者将光通信芯片的电路上的所有设备完全兼容地集成。

4. 发明申请

US20150331187A1 Method of Integrating All Active and Passive Optical Devices on Silicon-based Integrated Circuit 有权
标题翻译：将所有有源和无源光器件集成在硅基集成电路上的方法
公开(公告)号：US20150331187A1
公开(公告)日：2015-11-19
申请号：US14308797
申请日：2014-06-19
申请人： National Tsing Hua University
发明人： Ming-Chang Lee , Chih-Kuo Tseng
IPC分类号： G02B6/13 , G02B6/136
CPC分类号： G02B6/136 , G02B6/131 , G02B6/43 , G02B2006/12169 , H01L27/1203 , H01L31/02325
摘要： A method is provided to integrate all active and passive integrated optical devices on a silicon (Si)-based integrated circuit (IC). A Si-based substrate, instead of a Si-on-insulator (SOI) substrate, is used for integrating the devices. Therefore, cost is down and heat dissipation efficiency is enhanced. Besides, rapid melt growth (RMG) is used for solving problems on integrating the electric circuit and the optical devices. The present invention can be used to develop a proactive optical transceivers on a standard chip; or, to fully and compatibly integrate all devices on a circuit for an optical communication chip.
摘要翻译：提供了一种将所有有源和无源集成光学器件集成在基于硅（Si）的集成电路（IC）上的方法。代替绝缘体上硅（SOI）衬底的Si基衬底用于集成器件。因此，成本下降，散热效率提高。此外，快速熔融生长（RMG）用于解决电路和光学器件的集成问题。本发明可用于在标准芯片上开发主动式光收发器; 或者将光通信芯片的电路上的所有设备完全兼容地集成。

5. 发明授权

US08536028B1 Self alignment and assembly fabrication method for stacking multiple material layers 有权
标题翻译：用于堆叠多个材料层的自对准和组装制造方法
公开(公告)号：US08536028B1
公开(公告)日：2013-09-17
申请号：US13738979
申请日：2013-01-10
申请人： National Tsing Hua University
发明人： Ming-Chang Lee , Chih-Kuo Tseng , Zhong-Da Tian
IPC分类号： H01L21/31
CPC分类号： H01L21/02455 , H01L21/02381 , H01L21/0242 , H01L21/0245 , H01L21/02488 , H01L21/02505 , H01L21/02532 , H01L21/02538 , H01L21/02658 , H01L33/007
摘要： The present invention relates to a self alignment and assembly fabrication method for stacking multiple material layers, wherein a variety of homogeneous/heterogeneous materials can be stacked on a substrate by this self alignment and assembly fabrication method, without using any epitaxial buffer layers or gradient buffer layers; Moreover, these stacked materials can be single crystal, polycrystalline or non-crystalline phase materials. So that, by applying this self alignment and assembly fabrication method to fabricate a multi-layer device, not only the material cost can be effectively reduced, but the wafer alignment problem existing in the conventional wafer bonding process can also be solved. In addition, in the present invention, rapid melting growth (RMG) is used for growing the multiple crystallized materials laterally and rapidly from the substrate surface by liquid phase epitaxy, therefore the thermal budget can be largely reduced when fabricating the multi-layer device.
摘要翻译：本发明涉及一种用于堆叠多个材料层的自对准和组装制造方法，其中可以通过该自对准和组装制造方法将各种均质/异质材料堆叠在衬底上，而不使用任何外延缓冲层或梯度缓冲液层; 此外，这些堆叠材料可以是单晶，多晶或非晶相材料。因此，通过应用该自对准和组装制造方法来制造多层器件，不仅可以有效地降低材料成本，而且可以解决传统晶片接合工艺中存在的晶片对准问题。此外，在本发明中，快速熔融生长（RMG）用于通过液相外延从基板表面横向和快速地生长多个结晶材料，因此在制造多层器件时可以大大减少热预算。

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