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1. 发明授权

US08044484B2 Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus 有权
标题翻译：紫外线检测装置及其制造方法以及紫外线量测定装置
公开(公告)号：US08044484B2
公开(公告)日：2011-10-25
申请号：US12915150
申请日：2010-10-29
申请人： Noriyuki Miura , Tadashi Chiba
发明人： Noriyuki Miura , Tadashi Chiba
IPC分类号： H01L29/78
CPC分类号： H01L31/02162 , H01L27/144 , H01L31/105
摘要： The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
摘要翻译：本发明提供了一种紫外线检测装置，其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层，其形成在绝缘层上，首先是横向PN结型，形成在硅半导体层中的第二光电二极管，形成在硅半导体层上的层间绝缘膜，由氮化硅制成的第一滤光层，形成在设置在第一光电二极管上的层间绝缘膜之上，并且产生波长范围的光的UV-B波以上通过，以及由氮化硅构成的第二过滤层，其形成在设置在第二光电二极管上的层间绝缘膜的上方，并允许位于UV-A波的波长范围内的光或较高通过。

2. 发明申请

US20110042769A1 ULTRAVIOLET DETECTING DEVICE AND MANUFACTURING METHOD THREOF, AND ULTRAVIOLET QUANTITY MEASURING APPARATUS 有权
标题翻译：超紫外检测装置及制造方法及超紫外线测量装置
公开(公告)号：US20110042769A1
公开(公告)日：2011-02-24
申请号：US12915150
申请日：2010-10-29
申请人： Noriyuki Miura , Tadashi Chiba
发明人： Noriyuki Miura , Tadashi Chiba
IPC分类号： H01L31/0232 , H01L31/18
CPC分类号： H01L31/02162 , H01L27/144 , H01L31/105
摘要： The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
摘要翻译：本发明提供了一种紫外线检测装置，其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层，其形成在绝缘层上，首先是横向PN结型，形成在硅半导体层中的第二光电二极管，形成在硅半导体层上的层间绝缘膜，由氮化硅制成的第一滤光层，形成在设置在第一光电二极管上的层间绝缘膜之上，并且产生波长范围的光的UV-B波以上通过，以及由氮化硅构成的第二过滤层，其形成在设置在第二光电二极管上的层间绝缘膜之上，并允许位于UV-A波的波长范围内的光或较高通过。

3. 发明授权

US07843031B2 Ultraviolet detecting device and manufacturing method thereof, and ultraviolet quantity measuring apparatus 有权
标题翻译：紫外线检测装置及其制造方法以及紫外线量测定装置
公开(公告)号：US07843031B2
公开(公告)日：2010-11-30
申请号：US12036016
申请日：2008-02-22
申请人： Noriyuki Miura , Tadashi Chiba
发明人： Noriyuki Miura , Tadashi Chiba
IPC分类号： H01L29/78
CPC分类号： H01L31/02162 , H01L27/144 , H01L31/105
摘要： The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
摘要翻译：本发明提供了一种紫外线检测装置，其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层，其形成在绝缘层上，首先是横向PN结型，形成在硅半导体层中的第二光电二极管，形成在硅半导体层上的层间绝缘膜，由氮化硅制成的第一滤光层，形成在设置在第一光电二极管上的层间绝缘膜之上，并且产生波长范围的光的UV-B波以上通过，以及由氮化硅构成的第二过滤层，其形成在设置在第二光电二极管上的层间绝缘膜之上，并允许位于UV-A波的波长范围内的光或较高通过。

4. 发明申请

US20080237763A1 ULTRAVIOLET DETECTING DEVICE AND MANUFACTURING METHOD THEREOF, AND ULTRAVIOLET QUANTITY MEASURING APPARATUS 有权
标题翻译：超紫外检测装置及其制造方法及超紫外线测量装置
公开(公告)号：US20080237763A1
公开(公告)日：2008-10-02
申请号：US12036016
申请日：2008-02-22
申请人： Noriyuki Miura , Tadashi Chiba
发明人： Noriyuki Miura , Tadashi Chiba
IPC分类号： H01L31/0203 , H01L31/18
CPC分类号： H01L31/02162 , H01L27/144 , H01L31/105
摘要： The present invention provides an ultraviolet detecting device which comprises a silicon semiconductor layer having a thickness ranging from greater than or equal to 3 nm to less than or equal to 36 nm, which is formed over an insulating layer, lateral PN-junction type first and second photodiodes formed in the silicon semiconductor layer, an interlayer insulating film formed over the silicon semiconductor layer, a first filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the first photodiode and causes light lying in a wavelength range of an UV-B wave or higher to pass therethrough, and a second filter layer made of silicon nitride, which is formed over the interlayer insulating film provided over the second photodiode and allows light lying in a wavelength range of an UV-A wave or higher to pass therethrough.
摘要翻译：本发明提供了一种紫外线检测装置，其包括厚度范围大于或等于3nm至小于或等于36nm的硅半导体层，其形成在绝缘层上，首先是横向PN结型，形成在硅半导体层中的第二光电二极管，形成在硅半导体层上的层间绝缘膜，由氮化硅制成的第一滤光层，形成在设置在第一光电二极管上的层间绝缘膜之上，并且产生波长范围的光的UV-B波以上通过，以及由氮化硅构成的第二过滤层，其形成在设置在第二光电二极管上的层间绝缘膜的上方，并允许位于UV-A波的波长范围内的光或较高通过。

5. 发明申请

US20080007364A1 Voltage controlled oscillator 审中-公开
标题翻译：压控振荡器
公开(公告)号：US20080007364A1
公开(公告)日：2008-01-10
申请号：US11783481
申请日：2007-04-10
申请人： Tadashi Chiba
发明人： Tadashi Chiba
IPC分类号： H03B5/12
CPC分类号： H03B5/1228 , H03B5/1215 , H03B5/1253 , H03B5/1293 , H03B2200/0062
摘要： A voltage controlled oscillator (VCO) conducts current on two paths through parallel inductors and parallel cross-coupled metal-oxide-semiconductor transistors. A pair of varactors are connected in series on a third path extending from a node between one inductor and one transistor to a node between the other inductor and the other transistor. The oscillation frequency is controlled by a voltage applied to a node between the two varactors on the third path. Each varactor is structured as a metal-oxide-semiconductor transistor with interconnected source and drain electrodes, a gate electrode, a body region below the gate electrode, and a body terminal region extending beyond the gate electrode. An adjustment voltage applied to the body terminal region shifts the voltage-capacitance curve of the varactor and the voltage-frequency curve of the VCO without changing the shapes of these curves, providing a simple way to adjust the VCO to meet application requirements.
摘要翻译：压控振荡器（VCO）通过并联电感器和并联交叉耦合的金属氧化物半导体晶体管在两个路径上传导电流。一对变容二极管在从一个电感器和一个晶体管之间的节点延伸到另一个电感器和另一个晶体管之间的节点的第三路径上串联连接。振荡频率由施加到第三路径上的两个变容二极管之间的节点的电压控制。每个变容二极管被构造为具有互连的源极和漏极电极，栅极电极，栅极电极下方的主体区域以及延伸超过栅极电极的主体端子区域的金属氧化物半导体晶体管。施加到主体端子区域的调整电压使变容二极管的电压 - 电容曲线和VCO的电压 - 频率曲线偏移，而不改变这些曲线的形状，提供了一种调整VCO以满足应用要求的简单方法。

6. 发明授权

US5938299A Braking force distribution controlling apparatus 失效
标题翻译：制动力分配控制装置
公开(公告)号：US5938299A
公开(公告)日：1999-08-17
申请号：US922673
申请日：1997-09-03
申请人： Masahiro Hara , Tadashi Chiba
发明人： Masahiro Hara , Tadashi Chiba
IPC分类号： B60T8/26 , B60T8/1766 , B60T8/28 , B60T8/58 , B60T13/00
CPC分类号： B60T8/1766
摘要： In a braking force distribution controlling apparatus mounted on a car and arranged to perform such a control as to make a rear-wheel braking force smaller than a front-wheel braking force when predetermined initiation conditions are met, one of the initiation condition is to satisfy either one of such a first condition that a body deceleration is not less than a first predetermined deceleration K1 and that a rear-wheel slip value is a first predetermined value or more greater than a front-wheel slip value and such a second condition that the body deceleration is not less than a second predetermined deceleration K2 which is a value greater than the aforementioned first predetermined deceleration K1.
摘要翻译：在安装在轿厢上的制动力分配控制装置中，在满足规定的起动条件的情况下，配置为进行使后轮制动力小于前轮制动力的控制，起动条件之一为满足这样的第一条件中的任何一个，即身体减速度不小于第一预定减速度K1，并且后轮滑移值是比前轮滑移值大的第一预定值或更大的第二条件，车身减速度不小于比上述第一预定减速度K1大的值的第二预定减速度K2。

7. 发明授权

US5199553A Sliding contactor for electric equipment 失效
标题翻译：电气设备滑动接触器
公开(公告)号：US5199553A
公开(公告)日：1993-04-06
申请号：US772084
申请日：1991-10-08
申请人： Hisaji Shinohara , Naoshi Uchida , Kiyoshi Kandatsu , Soujun Matsumura , Tadashi Chiba , Shigeharu Miyazaki
发明人： Hisaji Shinohara , Naoshi Uchida , Kiyoshi Kandatsu , Soujun Matsumura , Tadashi Chiba , Shigeharu Miyazaki
IPC分类号： H01H1/023 , H01H1/0233 , H01H1/0237 , H01H1/027 , H01H1/58 , H01H11/04
CPC分类号： H01H1/023 , H01H1/0233 , H01H1/0237 , H01H1/027 , H01H1/5833 , H01H11/041 , H01H2001/5838 , Y10S428/929 , Y10S428/935 , Y10T29/49224 , Y10T428/12486 , Y10T428/12625
摘要： A movable electrical contactor having a surface thereof in slidable contact with a mating conductor, the surface being coated with a composite material in which particles of graphite (C) are dispersed in a matrix of silver (Ag). The coating film is formed by electric plating using a plating liquid of metal silver in the range of 2-100 g/l in concentration, potassium cyanide in the range of 2-250 g/l, potassium hydroxide in the range of 0.5-15 g/l, graphite powder in the range of 1-55 g/l, and a dispersant for dispersing graphite powder into plating liquid in the range of 10-2000 ppm.
摘要翻译：一种可移动的电接触器，其表面与配合导体滑动接触，该表面涂有复合材料，其中石墨（C）的颗粒分散在银（Ag）的基质中。涂膜通过使用金属银的电镀液浓度为2-100g / l，氰化钾为2-250g / l，氢氧化钾范围为0.5-15的电镀形成 g / l，1-55g / l范围内的石墨粉末，以及用于将石墨粉末分散在10-2000ppm范围内的电镀液中的分散剂。

8. 发明授权

US07507587B2 Automatic analysis and control system for electroless composite plating solution 有权
标题翻译：化学复合电镀液自动分析与控制系统
公开(公告)号：US07507587B2
公开(公告)日：2009-03-24
申请号：US11287285
申请日：2005-11-28
申请人： Tadashi Chiba , Koji Monden , Kazuki Yoshikawa , Shinji Tachibana
发明人： Tadashi Chiba , Koji Monden , Kazuki Yoshikawa , Shinji Tachibana
IPC分类号： G01N21/00 , G01N21/62
CPC分类号： C23C18/1683 , G01N21/31 , Y10T436/12
摘要： An automatic analysis and control system for electroless composite plating solution for automatically analyzing an electroless composite plating solution and performing such a control as to obtain an appropriate bath composition and/or use conditions, wherein, as a technique for measuring the concentration of a metallic component in the plating solution by absorptiometry, the system includes a mechanism for measuring transmissivity or absorbance at least two or more different wavelengths after the plating solution is automatically introduced into an analytical cell, and a mechanism for calculating the objective concentration from the measured values and displaying the calculation results.
摘要翻译：一种用于自动分析无电解复合电镀溶液并进行控制以获得适当的浴组合物和/或使用条件的无电解复合电镀溶液的自动分析和控制系统，其中，作为用于测量金属组分浓度的技术在通过吸光光度法测定的电镀溶液中，该系统包括用于在将电镀溶液自动引入分析单元之后测量至少两个或更多个不同波长的透射率或吸光度的机构，以及用于根据测量值计算目标浓度并显示计算结果。

9. 发明申请

US20080258155A1 SEMICONDUCTOR DEVICE, OPTICAL MEASURING AND DETECTING DEVICE, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件，光学测量和检测器件及其制造方法
公开(公告)号：US20080258155A1
公开(公告)日：2008-10-23
申请号：US12101383
申请日：2008-04-11
申请人： Tadashi Chiba
发明人： Tadashi Chiba
IPC分类号： H01L27/15 , H01L31/0232
CPC分类号： H01L31/02164 , H01L27/1203 , H01L31/02005 , H01L31/02019 , H01L2224/05554 , H01L2224/48091 , H01L2924/00014
摘要： Disclosed is a semiconductor device which is capable of preventing operation of the signal processing part from being unstable due to light not blocked by the light blocking layer by being obliquely incident on the signal processing part and preventing the operation of the signal processing part from being unstable due to stray charges occurring by light with which the light blocking layer is irradiated. In a light-incident part 12 having a light receiving element 36 and a signal processing circuit 38 that processes an output signal from the light receiving element 36, which are formed on a SOI substrate, a plurality of contact plugs 52 electrically connected to the light blocking layer 42 are laminated in the thickness direction of the SOI substrate along an edge of the light blocking layer that blocks the sunlight, with the uppermost of wiring layers on the signal processing circuit 38 as the light blocking layer 42. The plurality of contact plugs 52 have a ground or a potential sufficient to draw out stray charges occurring in the light blocking layer.
摘要翻译：公开了一种半导体器件，其能够防止信号处理部分的操作由于被光阻挡层不被信号处理部件倾斜入射而不被阻挡而不稳定，并且防止信号处理部件的操作不稳定由于光遮挡层被照射的光产生杂散电荷。在具有光接收元件36和信号处理电路38的光入射部分12中，处理来自形成在SOI衬底上的光接收元件36的输出信号，多个电连接到光的接触插塞52 阻挡层42沿着阻挡太阳光的遮光层的边缘沿着SOI衬底的厚度方向层叠，信号处理电路38上的最上层布线层作为遮光层42。多个接触插塞52具有足以引出在阻光层中产生的杂散电荷的接地或电位。

10. 发明授权

US07248480B2 Semiconductor element, manufacturing method thereof, and high frequency integrated circuit using the semiconductor element 有权
标题翻译：半导体元件及其制造方法以及使用该半导体元件的高频集成电路
公开(公告)号：US07248480B2
公开(公告)日：2007-07-24
申请号：US11056280
申请日：2005-02-14
申请人： Tadashi Chiba
发明人： Tadashi Chiba
IPC分类号： H01R9/00
CPC分类号： H01L28/10 , H01L23/5227 , H01L27/0641 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor element comprises a capacitance variable section and an inductor section. In the capacitance variable section, a variable capacitance diode equipped with first and second control electrodes is provided on an insulative substrate. The inductor section is formed on the capacitance variable section formed with the variable capacitance diode. The inductor section is formed in an insulating layer provided on the variable capacitance diode. A first input/output electrode, a second input/output electrode, and first and second control input/output electrodes are provided in exposed form on the upper side of the insulating layer provided on the capacitance variable section. Further, a turbinated spiral electrode that electrically connects the first input/output electrode and the second input/output electrode, a first control lead-out electrode that electrically connects between the first control electrode and the first control input/output electrode, and a second control lead-out electrode that electrically connects between the second control electrode and each second control input/output electrode, are provided within the insulating layer.
摘要翻译：半导体元件包括电容可变部分和电感器部分。在电容可变部分中，在绝缘基板上设置配备有第一和第二控制电极的可变电容二极管。电感器部分形成在由可变电容二极管形成的电容变量部分上。电感器部分形成在设置在可变电容二极管上的绝缘层中。第一输入/输出电极，第二输入/输出电极以及第一和第二控制输入/输出电极以暴露的形式设置在设置在电容可变部分上的绝缘层的上侧。此外，电连接第一输入/输出电极和第二输入/输出电极的云化螺旋电极，电连接第一控制电极和第一控制输入/输出电极之间的第一控制引出电极和第二控制引出电极控制引出电极，其在第二控制电极和每个第二控制输入/输出电极之间电连接，设置在绝缘层内。

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