专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08010915B2 Grid-based fragmentation for optical proximity correction in photolithography mask applications 有权
标题翻译：用于光刻掩模应用中的光学邻近校正的基于网格的碎片
公开(公告)号：US08010915B2
公开(公告)日：2011-08-30
申请号：US12170988
申请日：2008-07-10
申请人： Norman Shaowen Chen , Scott Goad , Paul Willard Ackmann
发明人： Norman Shaowen Chen , Scott Goad , Paul Willard Ackmann
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： An optical proximity correction (OPC) method for photolithography applications can be utilized to reduce the processing time, cost, and post-OPC file size associated with conventional methods. The OPC method provides a target layout pattern that represents a corresponding mask pattern for a photolithography mask, and aligns the target layout pattern relative to a suitably dimensioned fragmentation grid. Then, at least one feature of the target layout pattern is fragmented using the fragmentation grid. Thereafter, a fragment data set is generated in response to the grid-based fragmentation of the target layout pattern.
摘要翻译：可以利用用于光刻应用的光学邻近校正（OPC）方法来减少与常规方法相关联的处理时间，成本和后OPC文件大小。 OPC方法提供了表示光刻掩模的对应掩模图案的目标布局图案，并且将目标布局图案相对于适当尺寸的碎片网格对准。然后，使用分段网格将目标布局图案的至少一个特征分段。此后，响应于目标布局图案的基于网格的碎片而生成片段数据集。

2. 发明授权

US06916716B1 Asymmetric halo implants 有权
标题翻译：不对称光晕植入物
公开(公告)号：US06916716B1
公开(公告)日：2005-07-12
申请号：US10693016
申请日：2003-10-24
申请人： Scott Goad , James C. Pattison , Edward Ehrichs
发明人： Scott Goad , James C. Pattison , Edward Ehrichs
IPC分类号： H01L21/8234 , H01L21/426
CPC分类号： H01L21/26586 , H01L21/823412 , H01L21/823425
摘要： Various methods of fabricating halo regions are disclosed. In one aspect, a method of manufacturing is provided that includes forming a symmetric transistor and an asymmetric transistor on a substrate. A first mask is formed on the substrate with a first opening to enable implantation formation of first and second halo regions proximate first and second source/drain regions of the symmetric transistor. First and second halo regions of a first dosage are formed beneath the first gate by implanting off-axis through the first opening. A second mask is formed on the substrate with a second opening to enable implantation formation of a third halo region proximate a source region of the second asymmetric transistor while preventing formation of a halo region proximate a drain region of the asymmetric transistor. A third halo region of a second dosage greater than the first dosage is formed by implanting off-axis through the second opening.
摘要翻译：公开了制造卤素区域的各种方法。一方面，提供一种制造方法，其包括在基板上形成对称晶体管和非对称晶体管。第一掩模形成在具有第一开口的衬底上，以使得能够在对称晶体管的第一和第二源极/漏极区附近形成第一和第二晕区。第一剂量的第一和第二晕区通过离轴穿过第一开口形成在第一浇口下方。在具有第二开口的衬底上形成第二掩模，以使得能够在第二不对称晶体管的源极区附近形成第三晕区，同时防止在不对称晶体管的漏极区附近形成晕圈。通过离轴穿过第二开口形成大于第一剂量的第二剂量的第三晕区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式