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1. 发明申请

US20130284087A1 METHOD AND APPARATUSES FOR REDUCING POROGEN ACCUMULATION FROM A UV-CURE CHAMBER 有权
公开(公告)号：US20130284087A1
公开(公告)日：2013-10-31
申请号：US13776527
申请日：2013-02-25
申请人： Novellus Systems, Inc.
发明人： Lisa Gytri , Jeff Gordon , James Lee , Carmen Balderrama , Joseph Brett Harris , Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： B08B5/02
CPC分类号： H01L21/223 , B08B5/02 , B08B7/00 , B08B7/0035 , B08B7/0057 , B08B7/0071 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/26 , H01L21/67017 , H01L21/67115
摘要： Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

2. 发明授权

US09873946B2 Multi-station sequential curing of dielectric films 有权
公开(公告)号：US09873946B2
公开(公告)日：2018-01-23
申请号：US14593046
申请日：2015-01-09
申请人： Novellus Systems, Inc.
发明人： Jason Dirk Haverkamp , Dennis M. Hausmann , Kevin M. McLaughlin , Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： C23C16/56 , C23C16/34 , C23C16/40 , H01L21/02 , H01L21/3105 , H01L21/67 , H01L21/687
CPC分类号： C23C16/56 , C23C16/345 , C23C16/401 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/02348 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature, UV spectral distribution, and other conditions may be independently modulated in each operation. Operations may be pulsed or even be concurrently applied to the same wafer. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film.

3. 发明授权

US08734663B2 Purging of porogen from UV cure chamber 有权
标题翻译：从UV固化室清洗致孔剂
公开(公告)号：US08734663B2
公开(公告)日：2014-05-27
申请号：US13944421
申请日：2013-07-17
申请人： Novellus Systems, Inc.
发明人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： H01L21/02
CPC分类号： H01L21/67115 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/67017 , H01L21/6719 , H01L21/67207
摘要： A method for removing species from a substrate includes arranging a purge ring in a chamber proximate to a pedestal. The purge ring includes an inlet portion and an exhaust portion. The inlet portion defines an inlet plenum and an inlet baffle. The inlet baffle includes a continuous slit that is substantially continuous around a peripheral arc not less than about 270°. The exhaust portion includes an exhaust channel that is located substantially opposite the inlet baffle. The method further includes supplying ozone to the inlet plenum; at least partially defining a ring hole space having a periphery using the inlet portion and the exhaust portion; conveying gas from the inlet plenum into the ring hole space using the inlet baffle; conveying gas and other matter out of a purge space using the exhaust portion; and inhibiting deposition of material evolved from the substrate during curing using the purge ring.
摘要翻译：从衬底去除物质的方法包括将清洗环设置在靠近基座的腔室中。净化环包括入口部分和排气部分。入口部分限定入口气室和入口挡板。入口挡板包括连续狭缝，其围绕不小于约270°的外周弧线基本连续。排气部分包括位于入口挡板基本相对的排气通道。该方法还包括向入口气室供应臭氧; 至少部分地限定具有使用所述入口部和所述排气部的周边的环孔空间; 使用入口挡板将气体从入口气室输送到环孔空间; 使用所述排气部分将气体和其它物质输送出吹扫空间; 并且使用清洗环来抑制在固化期间从衬底放出的材料的沉积。

4. 发明申请

US20130298940A1 PURGING OF POROGEN FROM UV CURE CHAMBER 有权
标题翻译：从紫外线固化室中除去多孔元素
公开(公告)号：US20130298940A1
公开(公告)日：2013-11-14
申请号：US13944421
申请日：2013-07-17
申请人： Novellus Systems, Inc.
发明人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： H01L21/02
CPC分类号： H01L21/67115 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/67017 , H01L21/6719 , H01L21/67207
摘要： A method for removing species from a substrate includes arranging a purge ring in a chamber proximate to a pedestal. The purge ring includes an inlet portion and an exhaust portion. The inlet portion defines an inlet plenum and an inlet baffle. The inlet baffle includes a continuous slit that is substantially continuous around a peripheral arc not less than about 270°. The exhaust portion includes an exhaust channel that is located substantially opposite the inlet baffle. The method further includes supplying ozone to the inlet plenum; at least partially defining a ring hole space having a periphery using the inlet portion and the exhaust portion; conveying gas from the inlet plenum into the ring hole space using the inlet baffle; conveying gas and other matter out of a purge space using the exhaust portion; and inhibiting deposition of material evolved from the substrate during curing using the purge ring.
摘要翻译：从衬底去除物质的方法包括将清洗环设置在靠近基座的腔室中。净化环包括入口部分和排气部分。入口部分限定入口气室和入口挡板。入口挡板包括连续狭缝，其围绕不小于约270°的外周弧线基本连续。排气部分包括位于入口挡板基本相对的排气通道。该方法还包括向入口气室供应臭氧; 至少部分地限定具有使用所述入口部和所述排气部的周边的环孔空间; 使用入口挡板将气体从入口气室输送到环孔空间; 使用所述排气部分将气体和其它物质输送出吹扫空间; 并且使用清洗环来抑制在固化期间从基板放出的材料的沉积。

5. 发明授权

US10121682B2 Purging of porogen from UV cure chamber 有权
公开(公告)号：US10121682B2
公开(公告)日：2018-11-06
申请号：US15172599
申请日：2016-06-03
申请人： Novellus Systems, Inc.
发明人： Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： H01L21/67 , H01L21/02
摘要： A purge ring for providing a gas to a wafer processing chamber includes an inlet ring wall defining a ring hole space. An outer perimeter of the inlet ring wall is elliptical. An outer perimeter of the ring hole space is circular. The inlet ring wall is a continuous structure surrounding the ring hole space. An inlet baffle formed within the inlet ring wall surrounds at least 180 degrees of the outer perimeter of the ring hole space. An inlet plenum arranged in a first end of the inlet ring wall provides the gas to the ring hole space through the inlet baffle. An exhaust channel is formed within the inlet ring wall in a second end of the inlet ring wall. An exhaust outlet hole arranged in the second end of the inlet ring wall exhausts the gas out of the ring hole space via the exhaust channel.

6. 发明申请

US20150255285A1 METHOD AND APPARATUSES FOR REDUCING POROGEN ACCUMULATION FROM A UV-CURE CHAMBER 审中-公开
标题翻译：用于减少紫外线固化室的钚累积的方法和装置
公开(公告)号：US20150255285A1
公开(公告)日：2015-09-10
申请号：US14717806
申请日：2015-05-20
申请人： Novellus Systems, Inc.
发明人： Lisa Gytri , Jeff Gordon , James Lee , Carmen Balderrama , Joseph Brett Harris , Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： H01L21/223 , B08B7/00 , H01L21/26 , B08B5/02
CPC分类号： H01L21/223 , B08B5/02 , B08B7/00 , B08B7/0035 , B08B7/0057 , B08B7/0071 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/26 , H01L21/67017 , H01L21/67115
摘要： Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.
摘要翻译：通过在加热出口处除去脱气的致孔剂，同时吹扫气体流过晶片暴露于紫外光的窗户，可以减少UV固化室中的致孔剂积累。具有特定主要和次要排气与入口面积比的清洗环可以部分地由火焰抛光的石英制成以改善流动动力学。致孔剂累积的减少允许在室清洁之间处理更多的晶片，从而提高生产量和成本。

7. 发明申请

US20140080324A1 MULTI-STATION SEQUENTIAL CURING OF DIELECTRIC FILMS 审中-公开
标题翻译：电介质膜的多站点顺序固化
公开(公告)号：US20140080324A1
公开(公告)日：2014-03-20
申请号：US14086732
申请日：2013-11-21
申请人： Novellus Systems, Inc.
发明人： Krishnan Shrinivasan , Michael Rivkin , Eugene Smargiassi , Mohamed Sabri
IPC分类号： H01L21/02
CPC分类号： H01L21/02348 , C23C16/345 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/0217 , H01L21/02203 , H01L21/02271 , H01L21/02274 , H01L21/02282 , H01L21/3105 , H01L21/67115 , H01L21/68764 , H01L21/68771
摘要： The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
摘要翻译：本发明提供了在衬底上制备低k电介质材料的改进方法。该方法涉及多次操作紫外线固化过程，其中UV强度，晶片衬底温度和其它条件可在每次操作中独立调制。在某些实施方案中，在第一操作中将包含结构形成剂和致孔剂的膜暴露于UV辐射以便于去除致孔剂并产生多孔介电膜。在第二操作中，该膜暴露于UV辐射以增加多孔膜内的交联。在某些实施例中，固化发生在多工位UV室中，其中UV强度和衬底温度可以在每个工位单独控制。

8. 发明授权

US11177131B2 Method and apparatuses for reducing porogen accumulation from a UV-cure chamber 有权
公开(公告)号：US11177131B2
公开(公告)日：2021-11-16
申请号：US16029471
申请日：2018-07-06
申请人： Novellus Systems, Inc.
发明人： Lisa Marie Gytri , Jeff Gordon , James Forest Lee , Carmen Balderrama , Joseph Brett Harris , Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： H01L21/223 , H01L21/02 , H01L21/67 , B08B7/00 , B08B5/02 , H01L21/26
摘要： Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

9. 发明授权

US09073100B2 Method and apparatuses for reducing porogen accumulation from a UV-cure chamber 有权
标题翻译：从UV固化室减少致孔剂积聚的方法和装置
公开(公告)号：US09073100B2
公开(公告)日：2015-07-07
申请号：US13776527
申请日：2013-02-25
申请人： Novellus Systems, Inc.
发明人： Lisa Gytri , Jeff Gordon , James Lee , Carmen Balderrama , Joseph Brett Harris , Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： B08B5/02 , H01L21/67 , B08B7/00 , H01L21/00 , H01L21/02
CPC分类号： H01L21/223 , B08B5/02 , B08B7/00 , B08B7/0035 , B08B7/0057 , B08B7/0071 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/26 , H01L21/67017 , H01L21/67115
摘要： Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.
摘要翻译：通过在加热出口处除去脱气的致孔剂，同时吹扫气体流过晶片暴露于紫外光的窗户，可以减少UV固化室中的致孔剂积累。具有特定主要和次要排气与入口面积比的清洗环可以部分地由火焰抛光的石英制成以改善流动动力学。致孔剂累积的减少允许在室清洁之间处理更多的晶片，从而提高生产量和成本。

10. 发明申请

US20180315604A1 METHOD AND APPARATUSES FOR REDUCING POROGEN ACCUMULATION FROM A UV-CURE CHAMBER 审中-公开
公开(公告)号：US20180315604A1
公开(公告)日：2018-11-01
申请号：US16029471
申请日：2018-07-06
申请人： Novellus Systems, Inc.
发明人： Lisa Marie Gytri , Jeff Gordon , James Forest Lee , Carmen Balderrama , Joseph Brett Harris , Eugene Smargiassi , Stephen Yu-Hong Lau , George D. Kamian , Ming Xi
IPC分类号： H01L21/223 , B08B7/00 , H01L21/67 , H01L21/26 , H01L21/02 , B08B5/02
CPC分类号： H01L21/223 , B08B5/02 , B08B7/00 , B08B7/0035 , B08B7/0057 , B08B7/0071 , H01L21/02041 , H01L21/02203 , H01L21/02348 , H01L21/26 , H01L21/67017 , H01L21/67115
摘要： Porogen accumulation in a UV-cure chamber is reduced by removing outgassed porogen through a heated outlet while purge gas is flowed across a window through which a wafer is exposed to UV light. A purge ring having specific major and minor exhaust to inlet area ratios may be partially made of flame polished quartz to improve flow dynamics. The reduction in porogen accumulation allows more wafers to be processed between chamber cleans, thus improving throughput and cost.

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