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    • 4. 发明申请
    • BONDING TRANSISTOR WAFER TO LED WAFER TO FORM ACTIVE LED MODULES
    • 将晶体管波形耦合到LED波形,形成有源LED模块
    • US20140191246A1
    • 2014-07-10
    • US14207047
    • 2014-03-12
    • Nthdegree Technologies Worldwide Inc.
    • Bradley S. Oraw
    • H01L33/00
    • H01L25/167H01L33/0079H01L2924/0002H01L2924/00
    • LED modules are disclosed having a control MOSFET, or other transistor, in series with an LED. In one embodiment, a MOSFET wafer, containing an array of vertical MOSFETS, is aligned and bonded to an LED wafer, containing a corresponding array of vertical LEDs, and singulated to form thousands of active 3-terminal LED modules with the same footprint as a single LED. Despite the different forward voltages of red, green, and blue LEDs, RGB modules may be connected in parallel and their control voltages staggered at 60 Hz or greater to generate a single perceived color, such as white. The RGB modules may be connected in a panel for general illumination or for a color display.
    • 公开了具有与LED串联的控制MOSFET或其它晶体管的LED模块。 在一个实施例中,包含垂直MOSFETS阵列的MOSFET晶片被对准并结合到包含相应阵列的垂直LED的LED晶片上,并被单个化以形成数千个具有相同占空比的有源3端子LED模块 单个LED。 尽管红色,绿色和蓝色LED的正向电压不同,但是RGB模块可能并联连接,并且其控制电压以60Hz或更大的方式交错,以产生单个感知颜色,例如白色。 RGB模块可以连接在用于一般照明或彩色显示的面板中。
    • 9. 发明申请
    • FORMING THIN FILM VERTICAL LIGHT EMITTING DIODES
    • 形成薄膜垂直发光二极管
    • US20140170792A1
    • 2014-06-19
    • US14103464
    • 2013-12-11
    • Nthdegree Technologies Worldwide Inc.
    • Bradley S. Oraw
    • H01L33/24H01L33/08
    • H01L33/0079H01L33/0095
    • A thin film vertical light emitting diode (VLED) structure and process are described. Features of the design include the following: bonding multiple smaller diameter LED wafers to a larger diameter carrier wafer, which reduces the per LED fabrication cost; using thin film techniques to metalize the anode and cathode and using respective annealing steps prior to photolithography patterning of LED structures; enabling the thin film process by semi-permanent bonding techniques which provide thermal and chemical stability, while allowing bond release at an opportune time by thermal, optical, or chemical means; using epitaxial substrate removal techniques to separate the entire LED film from its growth substrate; and patterning various vertical LED devices which can emit light from the n-type side (cathode), p-type side (anode), side wall, or a combination of the surfaces by using mirror layers and electrically conductive and optically transmissive layers.
    • 描述了薄膜垂直发光二极管(VLED)结构和工艺。 该设计的特点包括:将多个较小直径的LED晶片连接到较大直径的载体晶片,从而降低每个LED制造成本; 使用薄膜技术使阳极和阴极金属化,并且在LED结构的光刻图案化之前使用各自的退火步骤; 通过提供热和化学稳定性的半永久粘合技术实现薄膜过程,同时通过热,光学或化学方式在适当的时间允许粘合释放; 使用外延衬底去除技术将整个LED膜与其生长衬底分离; 并且通过使用镜面层和导电和光学透射层来构图可以从n型侧(阴极),p型侧(阳极),侧壁或表面的组合发射光的各种垂直LED器件。