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1. 发明授权

US10141360B2 Isolated global shutter pixel storage structure 有权
公开(公告)号：US10141360B2
公开(公告)日：2018-11-27
申请号：US15280775
申请日：2016-09-29
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Kevin Ka Kei Leung , Dajiang Yang
IPC分类号： H01L27/146 , H04N5/374 , H04N5/378
摘要： An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global shutter gate transistor, disposed in the semiconductor material and coupled to the photodiode, a storage transistor disposed in the semiconductor material, an optical isolation structure disposed in the semiconductor material to isolate a sidewall of the storage transistor from stray light and stray charge. The optical isolation structure also includes a deep trench isolation structure that is filled with tungsten and a P+ passivation formed over an interior sidewall of the deep trench optical isolation structure. Each one of the pixel cells also include control circuitry coupled to the pixel array to control operation of the pixel array and readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.

2. 发明授权

US10566359B1 Variably biased isolation structure for global shutter pixel storage node 有权
公开(公告)号：US10566359B1
公开(公告)日：2020-02-18
申请号：US16109225
申请日：2018-08-22
申请人： OmniVision Technologies, Inc.
发明人： Kevin Ka Kei Leung
IPC分类号： H01L27/146 , H04N5/341 , H04N5/353 , H04N5/3745 , H04N5/378 , H01L21/02 , H01L29/40 , H01L27/144 , H01L21/321 , H01L21/765 , H01L21/3205 , H01L29/16
摘要： A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light and a global shutter gate transistor coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge. The isolation structure is filled with tungsten and is coupled to receive a variable bias signal to control a bias of the isolation structure. The variable bias signal is set to a first bias value during a transfer of the image charge to the storage transistor. The variable bias signal is set to a second bias value during a transfer of the image charge from the storage transistor.

3. 发明授权

US09282265B2 Camera devices and systems based on a single image sensor and methods for manufacturing the same 有权
标题翻译：基于单个图像传感器的相机设备和系统及其制造方法
公开(公告)号：US09282265B2
公开(公告)日：2016-03-08
申请号：US14022028
申请日：2013-09-09
申请人： OmniVision Technologies, Inc.
发明人： Kevin Ka Kei Leung , Wen Hua Lin
IPC分类号： H04N13/00 , H04N9/04 , G02B27/22 , H04N5/369 , H04N13/02
CPC分类号： H04N5/369 , H04N5/2254 , H04N5/2257 , H04N5/2258 , H04N9/045 , H04N13/218 , H04N13/257 , H04N2213/001
摘要： A camera device includes a single imaging sensor, a plurality of imaging objectives associated with the single imaging sensor, and a plurality of dedicated image areas within the single imaging sensor, each of the plurality of dedicated image areas corresponding to a respective one of the plurality of imaging objectives, such that images formed by each of the plurality of imaging objectives may be recorded by the single imaging sensor.
摘要翻译：相机装置包括单个成像传感器，与单个成像传感器相关联的多个成像目标以及单个成像传感器内的多个专用图像区域，所述多个专用图像区域中的每一个对应于所述多个专用图像区域中的相应一个的成像目标，使得由多个成像目标中的每一个形成的图像可以由单个成像传感器记录。

4. 发明申请

US20200066767A1 VARIABLY BIASED ISOLATION STRUCTURE FOR GLOBAL SHUTTER PIXEL STORAGE NODE 审中-公开
公开(公告)号：US20200066767A1
公开(公告)日：2020-02-27
申请号：US16109225
申请日：2018-08-22
申请人： OmniVision Technologies, Inc.
发明人： Kevin Ka Kei Leung
IPC分类号： H01L27/146 , H04N5/353 , H04N5/3745 , H04N5/378 , H04N5/341
摘要： A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light and a global shutter gate transistor coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge. The isolation structure is filled with tungsten and is coupled to receive a variable bias signal to control a bias of the isolation structure. The variable bias signal is set to a first bias value during a transfer of the image charge to the storage transistor. The variable bias signal is set to a second bias value during a transfer of the image charge from the storage transistor.

5. 发明申请

US20170018583A1 ISOLATED GLOBAL SHUTTER PIXEL STORAGE STRUCTURE 审中-公开
标题翻译：隔离全球快门像素存储结构
公开(公告)号：US20170018583A1
公开(公告)日：2017-01-19
申请号：US15280775
申请日：2016-09-29
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Kevin Ka Kei Leung , Dajiang Yang
IPC分类号： H01L27/146 , H04N5/378 , H04N5/374
CPC分类号： H01L27/1463 , H01L27/14605 , H01L27/14609 , H01L27/14614 , H01L27/14623 , H01L27/14641 , H01L27/14643 , H01L27/14656 , H01L27/14685 , H01L27/14689 , H04N5/374 , H04N5/378
摘要： An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global shutter gate transistor, disposed in the semiconductor material and coupled to the photodiode, a storage transistor disposed in the semiconductor material, an optical isolation structure disposed in the semiconductor material to isolate a sidewall of the storage transistor from stray light and stray charge. The optical isolation structure also includes a deep trench isolation structure that is filled with tungsten and a P+ passivation formed over an interior sidewall of the deep trench optical isolation structure. Each one of the pixel cells also include control circuitry coupled to the pixel array to control operation of the pixel array and readout circuitry coupled to the pixel array to readout image data from the plurality of pixels.
摘要翻译：成像系统包括像素单元的像素阵列，其中每个像素单元包括设置在半导体材料中的光电二极管，全局快门栅极晶体管，设置在半导体材料中并耦合到光电二极管，存储晶体管，设置在半导体中材料，设置在半导体材料中的隔离结构，以将存储晶体管的侧壁与杂散光和杂散电荷隔离。光学隔离结构还包括填充有钨的深沟槽隔离结构和在深沟槽光学隔离结构的内侧壁上形成的P +钝化。每个像素单元还包括耦合到像素阵列的控制电路，以控制像素阵列的操作和耦合到像素阵列的读出电路以从多个像素读出图像数据。

6. 发明申请

US20150070466A1 Camera Devices And Systems Based On A Single Image Sensor And Methods For Manufacturing The Same 有权
标题翻译：基于单个图像传感器的相机设备和系统及其制造方法
公开(公告)号：US20150070466A1
公开(公告)日：2015-03-12
申请号：US14022028
申请日：2013-09-09
申请人： OmniVision Technologies, Inc.
发明人： Kevin Ka Kei Leung , Wen Hua Lin
IPC分类号： H04N13/02 , H04N5/369 , H04N9/04
CPC分类号： H04N5/369 , H04N5/2254 , H04N5/2257 , H04N5/2258 , H04N9/045 , H04N13/218 , H04N13/257 , H04N2213/001
摘要： A camera device includes a single imaging sensor, a plurality of imaging objectives associated with the single imaging sensor, and a plurality of dedicated image areas within the single imaging sensor, each of the plurality of dedicated image areas corresponding to a respective one of the plurality of imaging objectives, such that images formed by each of the plurality of imaging objectives may be recorded by the single imaging sensor.
摘要翻译：相机装置包括单个成像传感器，与单个成像传感器相关联的多个成像目标以及单个成像传感器内的多个专用图像区域，所述多个专用图像区域中的每一个对应于所述多个专用图像区域中的相应一个的成像目标，使得由多个成像目标中的每一个形成的图像可以由单个成像传感器记录。

7. 发明授权

US09583527B1 Contact resistance reduction 有权
标题翻译：接触电阻降低
公开(公告)号：US09583527B1
公开(公告)日：2017-02-28
申请号：US15009526
申请日：2016-01-28
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Kevin Ka Kei Leung , Hsin-Neng Tai , Hung-Ming Weng
IPC分类号： H01L27/146
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14641
摘要： An image sensor includes a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in the semiconductor material adjacent to a photodiode in the plurality of photodiodes. A transfer gate is disposed to transfer image charge generated in the photodiode into the floating diffusion. A first electrical contact with a first cross sectional area is coupled to the transfer gate. A second electrical contact with a second cross sectional area is coupled to the floating diffusion, and the second cross sectional area is greater than the first cross sectional area. The image sensor also includes pixel transistor region disposed in the semiconductor material including a first electrical connection to the semiconductor material. A third electrical contact with a third cross sectional area is coupled to the first electrical connection to the semiconductor material, and the third cross sectional area is greater than the first cross sectional area.
摘要翻译：图像传感器包括设置在半导体材料中的多个光电二极管和布置在半导体材料中的与多个光电二极管中的光电二极管相邻的浮动扩散部。传输门被设置为将在光电二极管中产生的图像电荷转移到浮动扩散中。具有第一横截面积的第一电触点耦合到传输门。具有第二横截面面积的第二电触点耦合到浮动扩散部分，并且第二横截面面积大于第一横截面面积。图像传感器还包括设置在半导体材料中的像素晶体管区域，其包括与半导体材料的第一电连接。具有第三横截面积的第三电触点耦合到与半导体材料的第一电连接，并且第三横截面面积大于第一横截面积。

8. 发明授权

US09484370B2 Isolated global shutter pixel storage structure 有权
标题翻译：隔离全球快门像素存储结构
公开(公告)号：US09484370B2
公开(公告)日：2016-11-01
申请号：US14524791
申请日：2014-10-27
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Kevin Ka Kei Leung , Dajiang Yang
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14605 , H01L27/14609 , H01L27/14614 , H01L27/14623 , H01L27/14641 , H01L27/14643 , H01L27/14656 , H01L27/14685 , H01L27/14689 , H04N5/374 , H04N5/378
摘要： A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the photodiode. A global shutter gate transistor disposed in the semiconductor material and is coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An optical isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor. The optical isolation structure is filled with tungsten.
摘要翻译：像素单元包括设置在半导体材料中的光电二极管，以响应于被引导到光电二极管的入射光而累积图像电荷。设置在半导体材料中的全局快门栅极晶体管，并耦合到光电二极管以选择性地从光电二极管中消耗图像电荷。存储晶体管设置在半导体材料中以存储图像电荷。光学隔离结构设置在靠近存储晶体管的半导体材料中，以将存储晶体管的侧壁与存储晶体管外部的半导体材料中的杂散光和杂散电荷隔离。光隔离结构用钨填充。

9. 发明申请

US20160118438A1 ISOLATED GLOBAL SHUTTER PIXEL STORAGE STRUCTURE 有权
标题翻译：隔离全球快门像素存储结构
公开(公告)号：US20160118438A1
公开(公告)日：2016-04-28
申请号：US14524791
申请日：2014-10-27
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Kevin Ka Kei Leung , Dajiang Yang
IPC分类号： H01L27/148 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14605 , H01L27/14609 , H01L27/14614 , H01L27/14623 , H01L27/14641 , H01L27/14643 , H01L27/14656 , H01L27/14685 , H01L27/14689 , H04N5/374 , H04N5/378
摘要： A pixel cell includes a photodiode disposed in a semiconductor material to accumulate image charge in response to incident light directed to the photodiode. A global shutter gate transistor disposed in the semiconductor material and is coupled to the photodiode to selectively deplete the image charge from the photodiode. A storage transistor is disposed in the semiconductor material to store the image charge. An optical isolation structure is disposed in the semiconductor material proximate to the storage transistor to isolate a sidewall of the storage transistor from stray light and stray charge in the semiconductor material outside of the storage transistor. The optical isolation structure is filled with tungsten.
摘要翻译：像素单元包括设置在半导体材料中的光电二极管，以响应于被引导到光电二极管的入射光而累积图像电荷。设置在半导体材料中的全局快门栅极晶体管，并耦合到光电二极管以选择性地从光电二极管中消耗图像电荷。存储晶体管设置在半导体材料中以存储图像电荷。光学隔离结构设置在靠近存储晶体管的半导体材料中，以将存储晶体管的侧壁与存储晶体管外部的半导体材料中的杂散光和杂散电荷隔离。光隔离结构用钨填充。

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