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1. 发明授权

US11527569B2 High dynamic range split pixel CMOS image sensor with low color crosstalk 有权
公开(公告)号：US11527569B2
公开(公告)日：2022-12-13
申请号：US16877077
申请日：2020-05-18
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Duli Mao , Bill Phan , Keiji Mabuchi , Seong Yeol Mun , Yuanliang Liu , Vincent Venezia
IPC分类号： H01L27/146 , H04N5/378
摘要： A pixel cell includes a plurality of subpixels to generate image charge in response to incident light. The subpixels include an inner subpixel laterally surrounded by outer subpixels. A first plurality of transfer gates disposed proximate to the inner subpixel and a first grouping of outer subpixels. A first floating diffusion is coupled to receive the image charge from the first grouping of outer subpixels through a first plurality of transfer gates. A second plurality of transfer gates disposed proximate to the inner subpixel and the second grouping of outer subpixels. A second floating diffusion disposed in the semiconductor material and coupled to receive the image charge from each one of the second grouping of outer subpixels through the second plurality of transfer gates. The image charge in the inner subpixel is received by the first, second, or both floating diffusions through respective transfer gates.

2. 发明申请

US20210193703A1 NEGATIVELY BIASED ISOLATION STRUCTURES FOR PIXEL DEVICES 有权
公开(公告)号：US20210193703A1
公开(公告)日：2021-06-24
申请号：US16721320
申请日：2019-12-19
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Kazufumi Watanabe , Chih-Wei Hsiung , Vincent Venezia , Young Woo Jung , Geunsook Park , Lindsay Alexander Grant
IPC分类号： H01L27/146
摘要： Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

3. 发明授权

US09986192B1 Through-semiconductor and through-dielectric isolation structure 有权
公开(公告)号：US09986192B1
公开(公告)日：2018-05-29
申请号：US15362402
申请日：2016-11-28
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Dyson H. Tai , Duli Mao , Vincent Venezia , Gang Chen , Chih-Wei Hsiung
IPC分类号： H04N5/378 , H01L27/146
CPC分类号： H01L27/1463 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H04N5/378
摘要： An image sensor includes a semiconductor material including a photodiode disposed in the semiconductor material and an insulating material. A surface of the semiconductor material is disposed between the insulating material and the photodiode. The image sensor also includes isolation structures disposed in the semiconductor material and in the insulating material, and the isolation structures extend from within the semiconductor material through the surface and into the insulating material. The isolation structures include a core material and a liner material. The liner material is disposed between the core material and the semiconductor material, and is also disposed between the insulating material and the core material.

4. 发明授权

US09881963B1 Horizontal avalanche photodiode 有权
公开(公告)号：US09881963B1
公开(公告)日：2018-01-30
申请号：US15263936
申请日：2016-09-13
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Gang Chen , Eric A. G. Webster , Duli Mao , Vincent Venezia , Dyson H. Tai
IPC分类号： H01L27/00 , H01L27/146 , H01L31/107
CPC分类号： H01L27/14643 , H01L27/1463 , H01L27/14634 , H01L27/14683 , H01L31/107
摘要： An avalanche photodiode sensor includes a plurality of avalanche photodiodes disposed in a semiconductor material where individual avalanche photodiodes in the plurality of avalanche photodiodes have an internal electric field parallel with a first surface of the semiconductor material. The individual avalanche photodiodes in the plurality of avalanche photodiodes include a p-doped semiconductor region which extends into the semiconductor material, and an n-doped semiconductor region which extends into the semiconductor material. The internal electric field extends between the p-doped semiconductor region and the n-doped semiconductor region. Processing methods as examples are also proposed.

5. 发明授权

US09105767B2 Negatively charged layer to reduce image memory effect 有权
标题翻译：负电荷层降低图像记忆效应
公开(公告)号：US09105767B2
公开(公告)日：2015-08-11
申请号：US14331652
申请日：2014-07-15
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Howard E. Rhodes , Dajiang Yang , Gang Chen , Duli Mao , Vincent Venezia
IPC分类号： H01L31/06 , H01L31/0224 , H01L27/146 , H01L31/103
CPC分类号： H01L31/0224 , H01L27/14609 , H01L27/1462 , H01L27/14643 , H01L31/103
摘要： An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. A contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. The first polarity charge layer is disposed between a first one of a plurality of passivation layers and a second one of the plurality of passivation layers disposed over the photodiode region.
摘要翻译：图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。第一极性电荷层设置在多个钝化层中的第一个和设置在光电二极管区域上的多个钝化层中的第二钝化层之间。

6. 发明申请

US20140117485A1 NEGATIVELY CHARGED LAYER TO REDUCE IMAGE MEMORY EFFECT 有权
标题翻译：有意义的电荷层减少图像记忆效应
公开(公告)号：US20140117485A1
公开(公告)日：2014-05-01
申请号：US13660774
申请日：2012-10-25
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Howard E. Rhodes , Dajiang Yang , Gang Chen , Duli Mao , Vincent Venezia
IPC分类号： H01L31/0216
CPC分类号： H01L31/0224 , H01L27/14609 , H01L27/1462 , H01L27/14643 , H01L31/103
摘要： An image sensor pixel includes a photodiode region having a first polarity doping type disposed in a semiconductor layer. A pinning surface layer having a second polarity doping type is disposed over the photodiode region in the semiconductor layer. The second polarity is opposite from the first polarity. A first polarity charge layer is disposed proximate to the pinning surface layer over the photodiode region. An contact etch stop layer is disposed over the photodiode region proximate to the first polarity charge layer. The first polarity charge layer is disposed between the pinning surface layer and the contact etch stop layer such that first polarity charge layer cancels out charge having a second polarity that is induced in the contact etch stop layer. A passivation layer is also disposed over the photodiode region between the pinning surface layer and the contact etch stop layer.
摘要翻译：图像传感器像素包括设置在半导体层中的具有第一极性掺杂型的光电二极管区域。具有第二极性掺杂型的钉扎表面层设置在半导体层中的光电二极管区域的上方。第二极性与第一极性相反。第一极性电荷层设置在光电二极管区域附近的钉扎表面层附近。接触蚀刻停止层设置在靠近第一极性电荷层的光电二极管区域的上方。第一极性电荷层设置在钉扎表面层和接触蚀刻停止层之间，使得第一极性电荷层抵消在接触蚀刻停止层中感应的具有第二极性的电荷。钝化层也设置在钉扎表面层和接触蚀刻停止层之间的光电二极管区域之上。

7. 发明授权

US08670052B2 Image sensor with dual element color filter array and three channel color output 有权
标题翻译：图像传感器具有双元素滤色器阵列和三通道彩色输出
公开(公告)号：US08670052B2
公开(公告)日：2014-03-11
申请号：US13686788
申请日：2012-11-27
申请人： Omnivision Technologies, Inc.
发明人： Hsin-Chih Tai , Yin Qian , Duli Mao , Vincent Venezia
IPC分类号： H04N3/14 , H04N5/335 , H04N9/04 , H04N9/083
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14643
摘要： A color image sensor includes a pixel array including a CFA overlaying an array of photo-sensors for acquiring a color image. The CFA includes first color filter elements of a first color overlaying a first group of the photo-sensors, second color filter elements of a second color overlaying a second group of the photo-sensors, and a plurality of filter stacks overlaying a third group of the photo-sensors. The first group generates first color signals of a first color channel and the second group generates second color signals of a second color channel. Each of the filter stacks includes a first stacked filter of the first color and a second stacked filter of the second color. A sensitivity of the filter stacks equals a product of sensitivities of the first and the second stacked filters and the filter stacks generate a third color channel.
摘要翻译：彩色图像传感器包括像素阵列，该像素阵列包括覆盖用于获取彩色图像的光电传感器阵列的CFA。 CFA包括覆盖第一组光传感器的第一颜色的第一滤色器元件，覆盖第二组光传感器的第二颜色的第二滤色器元件和覆盖第三组光电传感器的多个滤光片堆叠光电传感器。第一组产生第一颜色通道的第一颜色信号，第二组产生第二颜色通道的第二颜色信号。每个过滤器堆叠包括第一颜色的第一堆叠过滤器和第二颜色的第二堆叠过滤器。滤波器堆叠的灵敏度等于第一和第二堆叠滤波器的灵敏度的乘积，并且滤波器堆叠产生第三颜色通道。

8. 发明授权

US11502120B2 Negatively biased isolation structures for pixel devices 有权
公开(公告)号：US11502120B2
公开(公告)日：2022-11-15
申请号：US16721320
申请日：2019-12-19
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Kazufumi Watanabe , Chih-Wei Hsiung , Vincent Venezia , Young Woo Jung , Geunsook Park , Lindsay Alexander Grant
IPC分类号： H01L27/146
摘要： Backside illuminated sensor pixel structure. In one embodiment, and image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that are disposed in a semiconductor substrate. Individual photodiodes of the pixel array are configured to receive an incoming light through a backside of the semiconductor substrate. A front side of the semiconductor substrate is opposite from the backside. A plurality of transistors disposed proximate to the front side of the semiconductor substrate, are arranged in a row along an outer perimeter of the photodiodes of the respective pixel; and a plurality of isolation structures arranged to bracket the row of transistors along the outer perimeter of the photodiodes. A plurality of contacts electrically contacting the plurality of isolation structures, and the contacts are configured to voltage-bias the plurality of isolation structures.

9. 发明授权

US10312391B2 Apparatus and method for single-photon avalanche-photodiode detectors with reduced dark count rate 有权
公开(公告)号：US10312391B2
公开(公告)日：2019-06-04
申请号：US15285201
申请日：2016-10-04
申请人： OmniVision Technologies, Inc.
发明人： Gang Chen , Duli Mao , Vincent Venezia , Dyson H. Tai , Bowei Zhang
IPC分类号： H01L31/0352 , H01L31/02 , H01L31/107 , H01L31/0224 , H01L27/144
摘要： An avalanche photodiode has a first diffused region of a first diffusion type overlying at least in part a second diffused region of a second diffusion type; and a first minority carrier sink region disposed within the first diffused region, the first minority carrier sink region of the second diffusion type and electrically connected to the first diffused region. In particular embodiments, the first diffusion type is N-type and the second diffusion type is P-type, and the device is biased so that a depletion zone having avalanche multiplication exists between the first and second diffused regions.

10. 发明申请

US20190115388A1 Trench Isolation for Image Sensors 审中-公开
公开(公告)号：US20190115388A1
公开(公告)日：2019-04-18
申请号：US15786874
申请日：2017-10-18
申请人： OmniVision Technologies, Inc.
发明人： Young Woo Jung , Lindsay Grant , Dyson Tai , Vincent Venezia , Wei Zheng
IPC分类号： H01L27/148 , H01L27/146
摘要： An image sensor includes a plurality of photodiodes disposed in a semiconductor material to convert image light into image charge. A floating diffusion is disposed proximate to the plurality of photodiodes to receive the image charge from the plurality of photodiodes. A plurality of transfer transistors is coupled to transfer the image charge from the plurality of photodiodes into the floating diffusion in response to a voltage applied to the gate terminal of the plurality of transfer transistors. A first trench isolation structure extends from a frontside of the semiconductor material into the semiconductor material and surrounds the plurality of photodiodes. A second trench isolation structure extends from a backside of the semiconductor material into the semiconductor material. The second trench isolation structure is disposed between individual photodiodes in the plurality of photodiodes.

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