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1. 发明授权

US09054184B2 Semiconductor device and method of forming the same 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US09054184B2
公开(公告)日：2015-06-09
申请号：US14183097
申请日：2014-02-18
申请人： PS4 Luxco S.a.r.l.
发明人： Noriaki Mikasa
IPC分类号： H01L29/78 , H01L27/108
CPC分类号： H01L29/7827 , H01L27/10814 , H01L27/10823 , H01L27/10855 , H01L27/10876 , H01L27/10891
摘要： A semiconductor device includes a semiconductor substrate having a first gate groove having first and second side walls facing to each other. A first gate insulating film covers the first and second side walls. A first gate electrode is disposed on the first gate insulating film and in a lower portion of the first gate groove. A first burying insulating film buries the first gate groove and covers the first gate electrode. A first diffusion region is adjacent to a first upper portion of the first gate insulating film. The first upper portion is positioned on an upper portion of the first side wall of the first gate groove. A second diffusion region is in contact with an upper portion of the second side wall of the first gate groove.
摘要翻译：半导体器件包括具有第一栅极沟槽的半导体衬底，第一栅极沟槽具有彼此面对的第一和第二侧壁。第一栅极绝缘膜覆盖第一和第二侧壁。第一栅电极设置在第一栅极绝缘膜上和第一栅极沟槽的下部。第一掩埋绝缘膜将第一栅极沟槽覆盖并覆盖第一栅电极。第一扩散区域与第一栅极绝缘膜的第一上部相邻。第一上部位于第一门槽的第一侧壁的上部。第二扩散区域与第一栅极沟槽的第二侧壁的上部接触。

2. 发明授权

US09305924B2 Semiconductor device having gate electrode embedded in gate trench 有权
标题翻译：具有嵌入栅极沟槽中的栅电极的半导体器件
公开(公告)号：US09305924B2
公开(公告)日：2016-04-05
申请号：US13934935
申请日：2013-07-03
申请人： PS4 LUXCO S.A.R.L.
发明人： Noriaki Mikasa
IPC分类号： H01L29/66 , H01L29/78 , H01L27/108 , H01L27/02
CPC分类号： H01L27/108 , H01L27/0207 , H01L27/10876 , H01L27/10888 , H01L29/66666 , H01L29/7827
摘要： Disclosed herein is a device that includes: a substrate having a gate trench; a gate electrode embedded in the gate trench with an intervention of a gate insulation film; and an embedded insulation film embedded in the gate trench. The substrate includes a first impurity diffusion region in contact with the embedded insulation film and a second impurity diffusion region in contact with the gate insulation film. The gate trench including a first trench portion extending in a first direction and second and third trench portions branching from the first trench portion and extending in a second direction that crosses the first direction. The gate electrode including first, second and third electrode portions embedded in the first, second and third trench portions of the gate trench, respectively. The first impurity diffusion region being sandwiched between the second and third electrode portions.
摘要翻译：本文公开了一种装置，其包括：具有栅极沟槽的衬底; 栅极电极嵌入在栅极沟槽中，介入了栅极绝缘膜; 以及嵌入在栅极沟槽中的嵌入式绝缘膜。衬底包括与嵌入式绝缘膜接触的第一杂质扩散区域和与栅极绝缘膜接触的第二杂质扩散区域。栅极沟槽包括沿第一方向延伸的第一沟槽部分和从第一沟槽部分分支并沿与第一方向相交的第二方向延伸的第二和第三沟槽部分。所述栅极电极分别包括嵌入在所述栅极沟槽的所述第一，第二和第三沟槽部分中的第一，第二和第三电极部分。第一杂质扩散区域被夹在第二和第三电极部分之间。

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