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1. 发明授权

US11532652B2 Imaging device and image acquisition device 有权
公开(公告)号：US11532652B2
公开(公告)日：2022-12-20
申请号：US16897509
申请日：2020-06-10
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Masayuki Takase , Takayoshi Yamada , Tokuhiko Tamaki
IPC分类号： H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
摘要： An imaging device includes a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a counter electrode on the first surface; a first electrode on the second surface; a second electrode on the second surface, the second electrode being spaced from the first electrode; and an auxiliary electrode on the second surface between the first electrode and the second electrode. The auxiliary electrode is spaced from the first electrode and the second electrode, where a shortest distance between the first electrode and the auxiliary electrode is different from a shortest distance between the second electrode and the auxiliary electrode.

2. 发明授权

US10931900B2 Imaging device 有权
公开(公告)号：US10931900B2
公开(公告)日：2021-02-23
申请号：US16410893
申请日：2019-05-13
申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
发明人： Junji Hirase , Yoshihiro Sato , Yoshinori Takami , Masayuki Takase , Masashi Murakami
IPC分类号： H04N5/361 , H04N5/359 , H04N5/363 , H01L27/146 , H04N5/369 , H04N5/3745
摘要： An imaging device includes a semiconductor layer including an impurity region of a first conductivity type, a photoelectric converter electrically connected to the impurity region, and a transistor having a gate of a second conductivity type different from the first conductivity type, a source and a drain, the transistor including the impurity region as one of the source and the drain, the gate being electrically connected to the impurity region.

3. 发明授权

US10720457B2 Imaging device and image acquisition device 有权
公开(公告)号：US10720457B2
公开(公告)日：2020-07-21
申请号：US16164590
申请日：2018-10-18
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Masayuki Takase , Takayoshi Yamada , Tokuhiko Tamaki
IPC分类号： H01L27/146 , H04N5/378 , H04N5/353 , H01L27/30
摘要： An imaging device includes a pixel comprising a photoelectric conversion layer having a first surface and a second surface opposite to the first surface; a pixel electrode on the first surface; an auxiliary electrode on the first surface, the auxiliary electrode being spaced from the pixel electrode; an upper electrode on the second surface, the upper electrode facing the pixel electrode and the auxiliary electrode; and an amplification transistor having a gate coupled to the pixel electrode. The imaging device also includes voltage application circuitry that generates a first voltage and a second voltage different from the first voltage, the voltage application circuitry being coupled to the auxiliary electrode. The voltage application circuitry selectively supplies either the first voltage or the second voltage to the auxiliary electrode.

4. 发明授权

US10453980B2 Photodetection device and imaging device 有权
公开(公告)号：US10453980B2
公开(公告)日：2019-10-22
申请号：US16000881
申请日：2018-06-05
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Sanshiro Shishido , Masayuki Takase
IPC分类号： H01L31/0352 , H01L31/101 , H01L27/14 , H01L27/146
摘要： A photodetection device includes: a photoelectric converter generating charge; a first channel having first and second ends, the first end being connected to the photoelectric converter, charge being transferred from the first end toward the second end; a second channel diverging from the first channel at a first position of the first channel; a third channel diverging from the first channel at a second position of the first channel; a first accumulator accumulating charge transferred from the first channel through the second channel; a second accumulator accumulating charge transferred from the first channel through the third channel; and at least one first gate electrode switching between transfer/cutoff of charge in the second channel, and switching between transfer/cutoff of charge in the third channel, a width of the first channel at the first end being greater than a width of the first channel at the second end in a plan view.

5. 发明授权

US10142570B1 Imaging device and image acquisition device 有权
公开(公告)号：US10142570B1
公开(公告)日：2018-11-27
申请号：US16040905
申请日：2018-07-20
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Takayoshi Yamada , Masayuki Takase , Tokuhiko Tamaki , Masashi Murakami
IPC分类号： H04N5/232 , H01L27/146 , H04N5/359 , H04N5/378 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/265
摘要： An imaging device including at least one pixel, where each of the at least one pixels includes a photoelectric conversion layer having a first surface and a second surface being on a side opposite to the first surface; a first electrode located on the first surface; a second electrode located on the first surface, the second electrode being separated from the first electrode, a first voltage being applied to the second electrode; a third electrode located on the second surface, the third electrode opposing to the first electrode and the second electrode, a second voltage being applied to the third electrode; and an amplifier transistor having a gate electrically connected to the first electrode, where an absolute value of a difference between the first voltage and the second voltage is larger than an absolute value of a difference between the second voltage and a voltage of the first electrode.

6. 发明授权

US10367108B2 Photodetection device and imaging device 有权
公开(公告)号：US10367108B2
公开(公告)日：2019-07-30
申请号：US16000885
申请日：2018-06-06
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Masayuki Takase , Sanshiro Shishido
IPC分类号： H01L27/14 , H01L31/0352 , H01L27/146 , H01L31/101
摘要： A photodetection device includes: a photoelectric converter generating charge; a first transfer channel having first and second ends, the first end being connected to the photoelectric converter, charge from the photoelectric converter being transferred from the first end toward the second end; a second transfer channel diverging from the first transfer channel at a first position; a third transfer channel diverging from the first transfer channel at a second position, further than the first position from the first end; a first charge accumulator accumulating charge transferred through the second transfer channel; a second charge accumulator accumulating charge transferred through the third transfer channel; a first gate electrode switching between transfer/cutoff of charge in the first transfer channel; and at least one second gate electrode switching between transfer/cutoff of charge in the second and third transfer channels, the third transfer channel being wider than the second transfer channel.

7. 发明授权

US10057518B2 Imaging device and image acquisition device 有权
公开(公告)号：US10057518B2
公开(公告)日：2018-08-21
申请号：US15423397
申请日：2017-02-02
申请人： PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
发明人： Takayoshi Yamada , Masayuki Takase , Tokuhiko Tamaki , Masashi Murakami
IPC分类号： H04N5/357 , H01L27/146 , H04N5/359 , H04N5/265 , H04N5/232 , H04N5/378 , H04N5/374
CPC分类号： H04N5/359 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14623 , H01L27/14636 , H01L27/14645 , H01L27/14667 , H04N5/23232 , H04N5/265 , H04N5/357 , H04N5/361 , H04N5/374 , H04N5/378
摘要： An imaging device comprises at least one unit pixel cell. Each of them comprises: a photoelectric conversion layer having a first and second surfaces; a pixel electrode and a shield electrode located on the first surface and separated from each other, a shield voltage being applied to the shield electrode; an upper electrode located on the second surface and opposing to the pixel electrode and the shield electrode, a counter voltage being applied to the upper electrode; a charge accumulation node electrically connected to the pixel electrode; and a charge detection circuit electrically connected to the charge accumulation node. An absolute value of a difference between the shield voltage and the counter voltage is larger than an absolute value of a difference between the counter voltage and a voltage of the pixel electrode.

8. 发明授权

US09478760B2 Solid-state imaging device, imaging module, and imaging apparatus 有权
标题翻译：固态成像装置，成像模块和成像装置
公开(公告)号：US09478760B2
公开(公告)日：2016-10-25
申请号：US14668606
申请日：2015-03-25
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Tokuhiko Tamaki , Masayuki Takase , Yasuhiko Adachi
IPC分类号： H01L29/08 , H01L51/44 , H01L27/30 , H01L51/42
CPC分类号： H01L51/441 , H01L27/307 , H01L51/4273 , Y02E10/549
摘要： A solid-state imaging device according to an aspect of the present disclosure includes pixel including: a first and second electrode located in a same layer, the second electrode being located between the first electrode and the other first electrodes included in adjacent pixels; an organic photoelectric conversion film including a first surface and a second surface, the first surface being in contact with the first electrode and the second electrode; and a counter electrode located on the second surface. The organic photoelectric conversion film extends over the pixels. The first electrode is an electrode through which electrons or holes generated in the organic photoelectric conversion film are extracted. An area ratio of the first electrode to the each pixel is 25% or less. And a total area ratio of a sum of the first electrode and the second electrode to the each pixel is 40% or greater.
摘要翻译：根据本公开的一个方面的固态成像装置包括像素，包括：位于相同层中的第一和第二电极，第二电极位于第一电极和包括在相邻像素中的其它第一电极之间; 包括第一表面和第二表面的有机光电转换膜，所述第一表面与所述第一电极和所述第二电极接触; 和位于第二表面上的对电极。有机光电转换膜在像素上延伸。第一电极是提取在有机光电转换膜中产生的电子或空穴的电极。第一电极与每个像素的面积比为25％以下。并且，第一电极和第二电极的总和与各像素的总面积比为40％以上。

9. 发明授权

US09402040B2 Solid-state imaging device 有权
标题翻译：固态成像装置
公开(公告)号：US09402040B2
公开(公告)日：2016-07-26
申请号：US14666200
申请日：2015-03-23
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Masayuki Takase , Yoshihiro Sato , Junji Hirase , Tokuhiko Tamaki
IPC分类号： H04N5/369 , G02B13/00 , H04N5/232 , H01L27/146
CPC分类号： H04N5/369 , G02B13/0015 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14665 , H04N5/23212 , H04N5/3696
摘要： A solid-state imaging device has a plurality of imaging-purpose pixels and a plurality of focus detection-purpose pixels. Each of the imaging-purpose pixels are provided with a first lower electrode, a photoelectric conversion film formed on the first lower electrode, and an upper electrode formed on the photoelectric conversion film. Each of the focus detection-purpose pixels is provided with a second lower electrode, the photoelectric conversion film formed on the second lower electrode, and the upper electrode formed on the photoelectric conversion film. The area of the second lower electrode is smaller than the area of the first lower electrodes. The second lower electrode is provided on a position deviating from a pixel center of a corresponding focus detection-pixel, and two second lower electrodes corresponding to two focus detection purpose pixels included in the plurality of focus detection purpose pixels is arranged in mutually opposite directions.
摘要翻译：固态成像装置具有多个成像目的像素和多个焦点检测目的像素。每个成像目的像素设置有形成在第一下电极上的第一下电极，光电转换膜和形成在光电转换膜上的上电极。每个焦点检测目的像素设置有第二下部电极，形成在第二下部电极上的光电转换膜和形成在光电转换膜上的上部电极。第二下部电极的面积小于第一下部电极的面积。第二下电极设置在偏离对应的焦点检测像素的像素中心的位置，并且与多个焦点检测目的像素中包括的两个焦点检测目的像素相对应的两个第二下部电极被布置在相互相反的方向上。

10. 发明授权

US10341591B2 Imaging device 有权
公开(公告)号：US10341591B2
公开(公告)日：2019-07-02
申请号：US15446545
申请日：2017-03-01
申请人： Panasonic Intellectual Property Management Co., Ltd.
发明人： Junji Hirase , Yoshihiro Sato , Yoshinori Takami , Masayuki Takase , Masashi Murakami
IPC分类号： H04N5/359 , H04N5/361 , H04N5/363 , H04N5/369 , H01L27/146 , H04N5/3745
摘要： An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.

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