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1. 发明授权

US11031525B2 Micro light emitting diode chip and display panel having a backplane and a plurality of sub-pixels regions 有权
公开(公告)号：US11031525B2
公开(公告)日：2021-06-08
申请号：US16935163
申请日：2020-07-21
申请人： PlayNitride Inc.
发明人： Yu-Hung Lai , Yu-Yun Lo , Tzu-Yang Lin
IPC分类号： H01L33/06 , H01L27/146 , C30B25/18 , G09G3/32 , H01L25/075 , H01L27/12 , C30B29/40 , H01L27/15 , H01L33/08 , H01L25/16 , H01L33/38
摘要： A micro light emitting diode chip having a plurality of light-emitting regions, including a semiconductor epitaxial structure, a first electrode and a plurality of second electrodes disposed at interval is provided. The semiconductor epitaxial structure includes a first-type doped semiconductor layer, a plurality of second-type doped semiconductor layers and a plurality of light-emitting layers disposed at interval. The light-emitting layers are located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The light-emitting layers are located in the light-emitting regions respectively and electrically contact to the first-type doped semiconductor layer. The first electrode is electrically connected and contacts to the first-type doped semiconductor layers. The second electrodes are electrically connected to the second-type doped semiconductor layers. Furthermore, a display panel is also provided.

2. 发明授权

US10354981B2 Display and repair method thereof 有权
公开(公告)号：US10354981B2
公开(公告)日：2019-07-16
申请号：US15828357
申请日：2017-11-30
申请人： PlayNitride Inc.
发明人： Yu-Hung Lai , Yun-Li Li , Tzu-Yang Lin
IPC分类号： H01L25/075 , H01L51/56 , H01L21/52 , H01L21/66 , H01L23/00 , H01L27/15 , H01L33/00
摘要： A display including a back plate, a plurality of light emitting devices and a plurality of compensating light emitting devices is provided. The back plate has a plurality of pixels and at least one compensated region. The compensated region includes some of the pixels. The light emitting devices are arranged in all the pixels on the back plate. The compensated light emitting devices are disposed on the back plate and located in each pixel in the compensated region respectively. At least one of the pixels in the compensated region is dead pixel. Besides, a repair method of the display is also provided.

3. 发明授权

US10256372B2 Display device 有权
公开(公告)号：US10256372B2
公开(公告)日：2019-04-09
申请号：US15841290
申请日：2017-12-14
申请人： PlayNitride Inc.
发明人： Yun-Li Li , Yu-Hung Lai , Tzu-Yang Lin
IPC分类号： H01L33/60 , H01L29/20 , H01L33/46 , G02B5/08 , H01L25/075 , H01L33/62 , H01L33/38 , H01L33/10 , H01L33/08
摘要： A display device including a backplane, a plurality of light-emitting devices, a first distributed Bragg reflector layer and a second distributed Bragg reflector layer is provided. The light-emitting devices are disposed on the backplane. The first distributed Bragg reflector layer is disposed between the backplane and the light-emitting devices. The light-emitting devices are disposed between the first distributed Bragg reflector layer and the second distributed Bragg reflector layer. A projected area of the first distributed Bragg reflector layer on the backplane is larger than a projected area of one of the light-emitting devices on the backplane or a projected area of the second distributed Bragg reflector layer on the backplane is larger than a projected area of one light-emitting device on the backplane.

4. 发明申请

US20190051792A1 MICRO LIGHT EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20190051792A1
公开(公告)日：2019-02-14
申请号：US15786564
申请日：2017-10-17
申请人： PlayNitride Inc.
发明人： Yu-Yun Lo , Tzu-Yang Lin , Yu-Hung Lai
IPC分类号： H01L33/06 , H01L33/36 , H01L33/00 , H01L33/44 , H01L33/58 , H01L33/20 , H01L25/16
摘要： A method for manufacturing a micro light emitting diode device is provided. A connection layer and epitaxial structures are formed on a substrate. A first pad is formed on each of the epitaxial structures. A first adhesive layer is formed on the connection layer, and the first adhesive layer encapsulates the epitaxial structures and the first pads. A first substrate is connected to the first adhesive layer. The substrate is removed, and a second substrate is connected to the connection layer through a second adhesive layer. The first substrate and the first adhesive layer are removed. The connection layer located between any two adjacent epitaxial structures are partially removed to form a plurality of connection portions. Each of the connection portions is connected to the corresponding epitaxial structure, and a side edge of each of the connection portions protrudes from a side wall surface of the corresponding epitaxial structure.

5. 发明申请

US20190012956A1 LIGHT EMITTING MODULE AND DISPLAY DEVICE 审中-公开
公开(公告)号：US20190012956A1
公开(公告)日：2019-01-10
申请号：US16027204
申请日：2018-07-03
申请人： PlayNitride Inc.
发明人： Yun-Li Li , Tzu-Yang Lin , Yu-Hung Lai , Po-Jen Su , Hsuan-Wei Mai
IPC分类号： G09G3/32 , H05B33/08 , H01L25/075 , H01L23/48
摘要： A light emitting module including a circuit carrier and a plurality of light emitting devices is provided. The circuit carrier includes a first circuit layer, a second circuit layer, a dielectric layer and a plurality of conductive vias. The first circuit layer and the second circuit layer are located at two opposite sides of the dielectric layer. The conductive vias pass through the dielectric layer and two opposite end portions of each of the conductive vias are respectively connected to the first circuit layer and the second circuit layer. The light emitting devices are electrically bonded to the first circuit layer. Moreover, the light emitting devices are disposed in a device disposing area of the circuit carrier and the conductive vias are arranged outside the device disposing area. A display device is also provided.

6. 发明申请

US20190006559A1 MICRO LIGHT EMITTING DIODE AND DISPLAY PANEL 审中-公开
公开(公告)号：US20190006559A1
公开(公告)日：2019-01-03
申请号：US16019556
申请日：2018-06-27
申请人： PlayNitride Inc.
发明人： Yu-Hung Lai , Yu-Yun Lo , Tzu-Yang Lin
IPC分类号： H01L33/38 , H01L25/075 , H01L27/12 , H01L33/44 , H01L33/62 , H01L33/32 , H01L33/06
摘要： A micro light emitting diode including an epitaxial layer, an insulation layer, a first electrode, and a second electrode is provided. The insulation layer is located on a surface of the epitaxial layer and has a first through hole and a second through hole. The first electrode is electrically connected to a first-type semiconductor layer of the epitaxial layer through the first through hole and has a plurality of first-electrode flat portions. The first-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. The second electrode is electrically connected to a second-type semiconductor layer of the epitaxial layer through the second through hole and has a plurality of second-electrode flat portions. The second-electrode flat portions respectively have different horizontal heights relative to the epitaxial layer. A display panel is also provided.

7. 发明申请

US20180158806A1 MANUFACTURING METHOD OF DISPLAY 审中-公开
公开(公告)号：US20180158806A1
公开(公告)日：2018-06-07
申请号：US15828380
申请日：2017-11-30
申请人： PlayNitride Inc.
发明人： Yu-Hung Lai , Tzu-Yang Lin , Yu-Yun Lo
IPC分类号： H01L25/075 , H01L33/00 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/0095 , H01L33/62 , H01L2924/12041 , H01L2933/0066
摘要： A manufacturing method of a display including the following steps is provided. Firstly, a back plate, a first transfer platform and a second transfer platform are provided, wherein a plurality of first light-emitting devices are disposed on the first transfer platform, and a plurality of second light-emitting devices are disposed on the second transfer platform. Secondly, a plurality of first bonding layers are formed at a plurality of first positions of the back plate. Then, the first transfer platform and the back plate are correspondingly docked, so that the first light-emitting devices are bonded on the first positions through the first bonding layers. After that, a plurality of second bonding layers are formed at a plurality of second positions of the back plate. Finally, the second transfer platform and the back plate are correspondingly docked, so that the second light-emitting devices are bonded on the second positions through the second bonding layers.

8. 发明申请

US20160172341A1 LIGHT EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20160172341A1
公开(公告)日：2016-06-16
申请号：US14944236
申请日：2015-11-18
申请人： PlayNitride Inc.
发明人： Yu-Hung Lai , Tzu-Yang Lin
IPC分类号： H01L25/075 , H01L33/62 , H01L33/60
CPC分类号： H01L25/0753 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light emitting device includes a substrate, a plurality of micro light emitting chips, a plurality of reflective structures and a plurality of conductive bumps. The substrate has a plurality of pads. The micro light emitting chips are disposed on the substrate in dispersion, and each of the micro light emitting chips includes a light emitting layer. The reflective structures are disposed around the micro light emitting chips in dispersion, and at least cover the micro light emitting layers of the light emitting chips. The conductive bumps are disposed corresponding to the micro light emitting chips and located between the micro light emitting chips and the substrate, wherein the micro light emitting chips are electrically connected to the pads of the substrate through the conductive bumps.
摘要翻译：发光器件包括衬底，多个微发光芯片，多个反射结构和多个导电凸块。衬底具有多个衬垫。微发光芯片以分散方式设置在基板上，并且每个微发光芯片都包括发光层。反射结构以分散方式设置在微发光芯片周围，并且至少覆盖发光芯片的微发光层。导电凸块对应于微发光芯片并位于微发光芯片和基板之间，其中微发光芯片通过导电凸块电连接到基板的焊盘。

9. 发明授权

US09312464B2 Flip chip package structure and wafer level package structure 有权
标题翻译：倒装芯片封装结构和晶圆级封装结构
公开(公告)号：US09312464B2
公开(公告)日：2016-04-12
申请号：US14716900
申请日：2015-05-20
申请人： PlayNitride Inc.
发明人： Shao-Hua Huang , Chih-Ling Wu , Yu-Yun Lo , Tzu-Yang Lin , Yu-Hung Lai
IPC分类号： H01L33/00 , H01L33/62 , H01L25/075 , H01L33/38 , H01L33/48
CPC分类号： H01L33/62 , H01L33/44 , H01L2924/0002 , H01L2924/00
摘要： A flip chip package structure includes a package base and a LED chip. The package base includes a first substrate, a first and a second electrodes disposed on the first substrate and a bonding layer disposed on the first substrate. The LED chip is flipped on the package base and includes an epitaxy layer, a third and a fourth electrodes disposed on the epitaxy layer and contacting the first and the second electrodes, a second insulating layer disposed between the third and the fourth electrodes, and a plurality of bonding pillars disposed on the second insulating layer and contacting the bonding layer. A minimum interval between the bonding layer, the first and the second electrodes and a minimum interval between the bonding pillars, the second and the third electrodes are larger than a width of each bonding pillar.
摘要翻译：倒装芯片封装结构包括封装基座和LED芯片。封装基座包括第一基板，设置在第一基板上的第一和第二电极以及设置在第一基板上的接合层。 LED芯片在封装基底上翻转，并且包括外延层，设置在外延层上并接触第一和第二电极的第三和第四电极，设置在第三和第四电极之间的第二绝缘层，以及多个接合柱设置在第二绝缘层上并与接合层接触。接合层，第一和第二电极之间的最小间隔以及接合柱，第二和第三电极之间的最小间隔大于每个接合柱的宽度。

10. 发明授权

US11616050B2 Manufacturing method of micro light emitting diode device including different-type epitaxial structures having respective connection portions of different thicknesses 有权
公开(公告)号：US11616050B2
公开(公告)日：2023-03-28
申请号：US17356538
申请日：2021-06-24
申请人： PlayNitride Inc.
发明人： Yu-Yun Lo , Tzu-Yang Lin , Yu-Hung Lai
IPC分类号： H01L25/075 , H01L33/62 , H01L25/00 , H01L33/00 , H01L33/38 , H01L33/44
摘要： A method for manufacturing a micro light emitting diode device is provided. A plurality of first type epitaxial structures are formed on a first substrate and the first type epitaxial structures are separated from each other. A first connection layer and a first adhesive layer are configured between the first type epitaxial structures and the first substrate. The first connection layer is connected to the first type epitaxial structures. The first adhesive layer is located between the first connection layer and the first type epitaxial substrate. The Young's modulus of the first connection layer is larger than the Young's modulus of the first adhesive layer. The first connection layer located between any two adjacent first type epitaxial structures is removed so as to form a plurality of first connection portions separated from each other. Each of the first connection portions is connected to the corresponding first type epitaxial structure.

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