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1. 发明授权

US10050610B2 Clock distribution schemes with wide operating voltage ranges 有权
公开(公告)号：US10050610B2
公开(公告)日：2018-08-14
申请号：US14642859
申请日：2015-03-10
申请人： QUALCOMM Incorporated
发明人： Giby Samson , Yu Pu , Kendrick Hoy Leong Yuen
IPC分类号： G06F1/10 , H03K5/135 , H03K19/00 , H03K5/00
摘要： Clock distribution schemes with wide operating voltage ranges are disclosed. In one aspect, an operating voltage level or condition within a computing device is sensed. In a first voltage condition, delay elements are used within a clock tree to minimize clock skew. In a second voltage condition, one or more delay and/or clocked elements are bypassed to minimize clock skew at the second voltage condition. In addition to controlling clock skew, power may be conserved by depowering the bypassed elements. Controlling clock skew in this fashion improves operation of a computing device that includes the clock tree and may improve battery life.

2. 发明授权

US09970826B2 Bipolar junction transistor voltage-drop-based temperature sensors 有权
公开(公告)号：US09970826B2
公开(公告)日：2018-05-15
申请号：US14639053
申请日：2015-03-04
申请人： QUALCOMM Incorporated
发明人： William Xia , Kendrick Hoy Leong Yuen
IPC分类号： G01K7/01
CPC分类号： G01K7/015 , G01K7/01
摘要： Temperature sensors using bipolar junction transistors are provided. Examples of the disclosed sensors minimize effects of IR drop and have improved accuracy. An example temperature sensor includes a first branch coupled between a power supply and ground. The first branch includes a first transistor series-coupled with a second transistor via a first node and has a first temperature sensor output via the first node. The temperature sensor also includes a second branch coupled between the power supply and ground. The second branch includes a third transistor series-coupled with a fourth transistor via a second node and has a second temperature sensor output via the second node. The first through fourth transistors are diode-connected and can have an n-well structure or a deep n-well structure. The temperature sensor also includes a voltage sensor having an input coupled to the first temperature sensor output and the second temperature sensor output.

3. 发明授权

US09300295B1 Elimination of undesirable current paths in GSHE-MTJ based circuits 有权
标题翻译：消除基于GSHE-MTJ的电路中不需要的电流通路
公开(公告)号：US09300295B1
公开(公告)日：2016-03-29
申请号：US14626920
申请日：2015-02-19
申请人： QUALCOMM Incorporated
发明人： Yaojun Zhang , Wenqing Wu , Kendrick Hoy Leong Yuen , Karim Arabi
IPC分类号： H03K19/18 , H03K19/20 , H03K19/003
CPC分类号： H03K19/00346 , G11C11/1675 , G11C11/18 , H01L27/22 , H01L43/08 , H03K3/45 , H03K19/18
摘要： Systems and methods pertain to avoiding undesirable current paths or sneak paths in spintronic logic gates formed from Giant Spin Hall Effect (GSHE) magnetic tunnel junction (MTJ) elements. Sneak path prevention logic is coupled to the GSHE MTJ elements, to prevent the sneak paths. The sneak path prevention logic may include one or more transistors coupled to the one or more GSHE MTJ elements, to restrict write current from flowing from an intended pipeline stage to an unintended pipeline stage during a write operation. The sneak path prevention logic may also include one or more diodes coupled to the one or more GSHE MTJ elements to prevent a preset current from flowing into input circuitry or a charge current generation circuit. A preset line may be coupled to the one or more GSHE MTJ elements to divert preset current from flowing into unintended paths.
摘要翻译：系统和方法涉及避免由巨型旋转霍尔效应（GSHE）磁性隧道结（MTJ）元件形成的自旋电子逻辑门中的不必要的电流路径或潜行路径。潜行路径预防逻辑耦合到GSHE MTJ元素，以防止潜行路径。潜行路径预防逻辑可以包括耦合到一个或多个GSHE MTJ元件的一个或多个晶体管，以在写入操作期间限制写入电流从预期流水线级流到非预期流水线级。潜行路径预防逻辑还可以包括耦合到一个或多个GSHE MTJ元件的一个或多个二极管，以防止预设电流流入输入电路或充电电流产生电路。预设线可以耦合到一个或多个GSHE MTJ元件，以将预设电流从流入非预期路径转移。

4. 发明授权

US09135976B2 Method and apparatus of probabilistic programming multi-level memory in cluster states of bi-stable elements 有权
标题翻译：概率编程多级存储器在双稳态元件集群状态下的方法和装置
公开(公告)号：US09135976B2
公开(公告)日：2015-09-15
申请号：US14104443
申请日：2013-12-12
申请人： QUALCOMM Incorporated
发明人： Wenqing Wu , Kendrick Hoy Leong Yuen , Xiaochun Zhu , Seung Hyuk Kang , Matthew Michael Nowak , Jeffrey Alexander Levin , Robert P. Gilmore , Nicholas Ka Ming Yu
IPC分类号： G11C11/00 , G11C11/16 , G11C11/56 , G11C11/54
CPC分类号： G11C11/1675 , G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/54 , G11C11/5607
摘要： A probabilistic programming current is injected into a cluster of bi-stable probabilistic switching elements, the probabilistic programming current having parameters set to result in a less than unity probability of any given bi-stable switching element switching, and a resistance of the cluster of bi-stable switching elements is detected. The probabilistic programming current is injected and the resistance of the cluster state detected until a termination condition is met. Optionally the termination condition is detecting the resistance of the cluster of bi-stable switching elements at a value representing a multi-bit data.
摘要翻译：将概率编程电流注入到双稳定概率开关元件簇中，概率编程电流具有设置为导致任何给定双稳态开关元件切换的小于一概率的参数，以及bi的簇的电阻 - 检测到稳定的开关元件。注入概率编程电流，并检测到簇状态的电阻，直到满足终止条件。可选地，终止条件是以表示多位数据的值检测双稳态开关元件群的电阻。

5. 发明授权

US09495899B2 Contactless data communication using in-plane magnetic fields, and related systems and methods 有权
标题翻译：使用平面内磁场的非接触式数据通信，以及相关的系统和方法
公开(公告)号：US09495899B2
公开(公告)日：2016-11-15
申请号：US14036526
申请日：2013-09-25
申请人： QUALCOMM Incorporated
发明人： Wenqing Wu , Senthil Kumar Govindaswamy , Raghu Sagar Madala , Peiyuan Wang , Kendrick Hoy Leong Yuen , David Joseph Winston Hansquine
IPC分类号： H04B5/00 , H01L43/00 , G09G3/20 , H01L43/08 , H01L27/22
CPC分类号： H04B5/0031 , G09G3/2096 , G09G2370/16 , H01L27/22 , H01L43/08 , H04B5/0087 , H04W4/80
摘要： Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.
摘要翻译：本文描述的实施例涉及非接触式数据通信。本文公开了用于非接触式数据通信的相关系统和方法。例如，公开了一种基于磁场的非接触式发射器，其包括衬底，设置在衬底上的一对偶极线圈，以及与该对偶极线圈电耦合的驱动电路。为了将数据发送到设置在第二基板上的磁性隧道结（MTJ）接收器，驱动电路被配置为驱动一对偶极子线圈，以便在MTJ接收器的平面内产生磁场。可以使用磁场将数据从基于磁场的非接触式发射机传输到MTJ接收机。

6. 发明申请

US20160267214A1 CLOCK TREE DESIGN METHODS FOR ULTRA-WIDE VOLTAGE RANGE CIRCUITS 审中-公开
标题翻译：用于超宽电压范围电路的时钟树设计方法
公开(公告)号：US20160267214A1
公开(公告)日：2016-09-15
申请号：US14643096
申请日：2015-03-10
申请人： QUALCOMM Incorporated
发明人： Sung Kyu Lim , Francois Ibrahim Atallah , Rashid Ahmed Akbar Attar , Keith Alan Bowman , Yang Du , Juzer Zainuddin Fatehi , Jai Ganesh Kumar , Yu Pu , Giby Samson , Kendrick Hoy Leong Yuen
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F17/5031 , G06F17/5036 , G06F2217/62 , G06F2217/84
摘要： Clock tree design methods for ultra-wide voltage range circuits are disclosed. In one aspect, place and route software creates an integrated circuit (IC) in an optimal configuration at a first voltage condition. A first clock tree is created as part of the place and route process. Clock skew for the first clock tree is evaluated and minimized through insertion of bypassable delay elements. The delay elements are then removed from the wiring routing diagram. A second voltage condition is identified, and clock tree generation software is allowed to optimize the wiring routing diagram for the second voltage condition. The second clock tree generation software may insert more bypassable delay elements into the wiring routing diagram that allow clock skew optimization at the second voltage condition. The initial bypassable delay elements are then reinserted into the wiring routing diagram and a finished IC is established.
摘要翻译：公开了用于超宽电压范围电路的时钟树设计方法。在一个方面，放置和路由软件在第一电压条件下以最佳配置创建集成电路（IC）。第一个时钟树是作为地点和路由过程的一部分而创建的。通过插入可旁路延迟元件来评估和最小化第一个时钟树的时钟偏移。然后将延迟元件从布线图中删除。识别出第二电压条件，并允许时钟树生成软件优化第二电压条件的布线布线图。第二个时钟树生成软件可以在布线布线图中插入更多的可旁路延迟元件，允许在第二电压条件下进行时钟偏移优化。然后将初始可旁路延迟元件重新插入到布线布线图中，并建立成品IC。

7. 发明授权

US09324402B2 High density low power GSHE-STT MRAM 有权
公开(公告)号：US09324402B2
公开(公告)日：2016-04-26
申请号：US14479832
申请日：2014-09-08
申请人： QUALCOMM Incorporated
发明人： Wenqing Wu , Raghu Sagar Madala , Kendrick Hoy Leong Yuen , Karim Arabi
IPC分类号： G11C11/16 , H01L43/14 , G11C11/18
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1659 , G11C11/1675 , G11C11/18 , H01L43/14
摘要： Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).

8. 发明授权

US09230627B2 High density low power GSHE-STT MRAM 有权
标题翻译：高密度低功率GSHE-STT MRAM
公开(公告)号：US09230627B2
公开(公告)日：2016-01-05
申请号：US14451510
申请日：2014-08-05
申请人： QUALCOMM Incorporated
发明人： Wenqing Wu , Raghu Sagar Madala , Kendrick Hoy Leong Yuen , Karim Arabi
IPC分类号： G11C11/16 , H01L43/14 , G11C11/18
CPC分类号： G11C11/161 , G11C11/16 , G11C11/1659 , G11C11/1675 , G11C11/18 , H01L43/14
摘要： Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).
摘要翻译：系统和方法涉及包括混合巨型旋转霍尔效应（GSHE） - 旋转转矩（STT）磁阻随机存取存储器（MRAM）元件的存储元件，其包括形成在第一端子（A）和第二端子第二端子（B）和磁性隧道结（MTJ），具有与GSHE条带接合的MTJ的自由层和耦合到第三端子（C）的MTJ的固定层。自由层的容易轴的取向垂直于通过在第一端子和第二端子之间穿过GSHE带的电子产生的磁化，使得MTJ的自由层被配置为基于注入的第一充电电流来切换从第一端子到第二端子和从第二端子到第一端子的第二充电电流经由第三端子（C）通过第三端子注入/提取出MTJ的第二充电电流。

9. 发明授权

US09882609B2 Contactless data communication using in-plane magnetic fields, and related systems and methods 有权
公开(公告)号：US09882609B2
公开(公告)日：2018-01-30
申请号：US15280119
申请日：2016-09-29
申请人： QUALCOMM Incorporated
发明人： Wenqing Wu , Senthil Kumar Govindaswamy , Raghu Sagar Madala , Peiyuan Wang , Kendrick Hoy Leong Yuen , David Joseph Winston Hansquine
IPC分类号： H04B5/00 , G09G3/20 , H01L43/08 , H01L27/22 , H04W4/00
CPC分类号： H04B5/0031 , G09G3/2096 , G09G2370/16 , H01L27/22 , H01L43/08 , H04B5/0087 , H04W4/80
摘要： Embodiments described herein are related to contactless data communication. Related systems and methods for contactless data communication are disclosed herein. For example, a magnetic field-based contactless transmitter is disclosed that includes a substrate, a pair of dipole coils disposed on the substrate, and a drive circuit electrically coupled to the pair of dipole coils. To transmit data to a magnetic tunnel junction (MTJ) receiver disposed on a second substrate, the drive circuit is configured to drive the pair of dipole coils so as to generate a magnetic field in-plane to the MTJ receiver. Data can be transmitted from the magnetic field-based contactless transmitter to the MTJ receiver using the magnetic field.

10. 发明授权

US09515660B1 Single-ended contention-free wide operating range level voltage shifter with built-in voltage boosting and down-stepping assisting circuitry 有权
标题翻译：具有内置升压和下行辅助电路的单端无争用宽工作范围电平转换器
公开(公告)号：US09515660B1
公开(公告)日：2016-12-06
申请号：US14843992
申请日：2015-09-02
申请人： QUALCOMM Incorporated
发明人： Giby Samson , Yu Pu , Kendrick Hoy Leong Yuen
IPC分类号： H03K19/0185 , H03K17/687
CPC分类号： H03K19/018507
摘要： A voltage level shifter to provide an output logic signal in response to an input logic signal, where the input logic signal is in a first voltage domain and the output logic signal is in a second voltage domain. In one embodiment, a voltage boost module provides a boosted voltage in response to the input logic signal going HIGH, where the boosted voltage is sufficient to turn OFF a pull-up transistor operating in the second voltage domain. Contention among pull-down and pull-up transistors may be avoided.
摘要翻译：电压电平移位器，用于响应于输入逻辑信号提供输出逻辑信号，其中输入逻辑信号处于第一电压域，并且输出逻辑信号处于第二电压域。在一个实施例中，电压升压模块响应于输入逻辑信号变为高电平而提供升压电压，其中升压电压足以关闭在第二电压域中工作的上拉晶体管。可以避免下拉和上拉晶体管之间的争用。

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