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1. 发明授权

US08861238B2 Isolated soft-switch single-stage AC-DC converter 有权
标题翻译：隔离式软开关单级AC-DC转换器
公开(公告)号：US08861238B2
公开(公告)日：2014-10-14
申请号：US13595883
申请日：2012-08-27
申请人： Qin Huang , Yu Du , Wenxi Yao
发明人： Qin Huang , Yu Du , Wenxi Yao
IPC分类号： H02M7/217
CPC分类号： H02M7/217
摘要： An alternating current-to-direct current (AC-DC) converter is provided. The converter may include a transformer having a primary side and a secondary side. A first bi-directional switch and a first inductor may be connected in series between a positive terminal of an AC source and a first terminal of the primary side of the transformer. A second bi-directional switch and a second inductor may be connected between the positive terminal of the AC source and a second terminal of the primary side of the transformer and connected in parallel with the first bi-directional switch.
摘要翻译：提供交流电直流电（AC-DC）转换器。转换器可以包括具有初级侧和次级侧的变压器。第一双向开关和第一电感器可以串联连接在AC电源的正极端子和变压器初级侧的第一端子之间。第二双向开关和第二电感器可以连接在AC源的正极端子和变压器初级侧的第二端子之间并与第一双向开关并联连接。

2. 发明申请

US20130234669A1 INTELLIGENT INTEGRATED BATTERY MODULE 有权
标题翻译：智能集成电池模块
公开(公告)号：US20130234669A1
公开(公告)日：2013-09-12
申请号：US13600280
申请日：2012-08-31
申请人： Qin Huang , Yu Du
发明人： Qin Huang , Yu Du
IPC分类号： H02J7/00
CPC分类号： H02J7/0029 , G08B21/00 , H02J7/0068 , H02J7/04 , H02J7/16 , H02J7/34
摘要： An energy storage system is provided. The system includes a plurality of energy storage modules connected in parallel. Each energy storage module has an energy storage source, a bidirectional current converter configured for supplying charge to the energy storage source from a power source and for discharging current for use by an electrical device, a monitoring module for monitoring the energy storage source and the current converter, and a controller configured to control the current converter based upon monitored characteristics of the storage source and the current converter to produce a respective output signal for each module. A communications module is in connection with each output signal of the energy storage modules and configured for communicating a combined output signal with one of the power source and the electrical device.
摘要翻译：提供储能系统。该系统包括并联连接的多个能量存储模块。每个能量存储模块具有能量存储源，双向电流转换器，其被配置为从电源向能量存储源提供电荷并且用于放电以供电子设备使用;监视模块，用于监视能量存储源和电流转换器和配置成基于所监视的存储源和电流转换器的特性来控制电流转换器以产生每个模块的相应输出信号的控制器。通信模块与能量存储模块的每个输出信号相连，并被配置为将组合的输出信号与电源和电气设备之一进行通信。

3. 发明授权

US09444275B2 Intelligent integrated battery module 有权
标题翻译：智能集成电池模块
公开(公告)号：US09444275B2
公开(公告)日：2016-09-13
申请号：US13600280
申请日：2012-08-31
申请人： Qin Huang , Yu Du
发明人： Qin Huang , Yu Du
IPC分类号： H02J7/00 , G08B21/00 , H02J7/34 , H02J7/04 , H02J7/16
CPC分类号： H02J7/0029 , G08B21/00 , H02J7/0068 , H02J7/04 , H02J7/16 , H02J7/34
摘要： An energy storage system is provided. The system includes a plurality of energy storage modules connected in parallel. Each energy storage module has an energy storage source, a bidirectional current converter configured for supplying charge to the energy storage source from a power source and for discharging current for use by an electrical device, a monitoring module for monitoring the energy storage source and the current converter, and a controller configured to control the current converter based upon monitored characteristics of the storage source and the current converter to produce a respective output signal for each module. A communications module is in connection with each output signal of the energy storage modules and configured for communicating a combined output signal with one of the power source and the electrical device.
摘要翻译：提供储能系统。该系统包括并联连接的多个能量存储模块。每个能量存储模块具有能量存储源，双向电流转换器，其被配置为从电源向能量存储源提供电荷并且用于放电以供电子设备使用;监视模块，用于监视能量存储源和电流转换器和配置成基于所监视的存储源和电流转换器的特性来控制电流转换器以产生每个模块的相应输出信号的控制器。通信模块与能量存储模块的每个输出信号相连，并被配置为将组合的输出信号与电源和电气设备之一进行通信。

4. 发明申请

US20130051102A1 ISOLATED SOFT-SWITCH SINGLE-STAGE AC-DC CONVERTER 有权
标题翻译：隔离式软开关单级AC-DC转换器
公开(公告)号：US20130051102A1
公开(公告)日：2013-02-28
申请号：US13595883
申请日：2012-08-27
申请人： Qin Huang , Yu Du , Wenxi Yao
发明人： Qin Huang , Yu Du , Wenxi Yao
IPC分类号： H02M7/04 , H02M7/155 , H02M7/217
CPC分类号： H02M7/217
摘要： An alternating current-to-direct current (AC-DC) converter is provided. The converter may include a transformer having a primary side and a secondary side. A first bi-directional switch and a first inductor may be connected in series between a positive terminal of an AC source and a first terminal of the primary side of the transformer. A second bi-directional switch and a second inductor may be connected between the positive terminal of the AC source and a second terminal of the primary side of the transformer and connected in parallel with the first bi-directional switch.
摘要翻译：提供交流电直流电（AC-DC）转换器。转换器可以包括具有初级侧和次级侧的变压器。第一双向开关和第一电感器可以串联连接在AC电源的正极端子和变压器初级侧的第一端子之间。第二双向开关和第二电感器可以连接在AC源的正极端子和变压器初级侧的第二端子之间并与第一双向开关并联连接。

5. 发明申请

US20070024251A1 Apparatus and method for continuous conduction mode boost voltage power factor correction with an average current control mode 失效
标题翻译：具有平均电流控制模式的连续导通模式升压电压功率因数校正的装置和方法
公开(公告)号：US20070024251A1
公开(公告)日：2007-02-01
申请号：US11242915
申请日：2005-10-05
申请人： Chung-Cheng Wu , Qin Huang , Ning Zhu , Xin Zhang
发明人： Chung-Cheng Wu , Qin Huang , Ning Zhu , Xin Zhang
IPC分类号： G05F1/00
CPC分类号： G05F1/70
摘要： The continuous conduction mode (CCM) boost voltage power factor correction apparatus with an average-current control mode of the present invention uses resettable integrators to integrate the difference voltage signal outputted from the voltage error amplifier and the input current signal obtained from detection. The integration results are then compared to control the duty cycle of the switch. Thereby, the input current and the input voltage in the AC/DC electrical power converter have a proportion relation and their phases are the same as each other. The components used in this control method are simpler than the PFC circuit of the prior art. It is easy to integrate in one chip with fewer pins. The apparatus of the present invention has a high power factor and a low total harmonic distortion (THD).
摘要翻译：具有本发明的平均电流控制模式的连续导通模式（CCM）升压电压功率因数校正装置使用可复位积分器来积分从电压误差放大器输出的差分电压信号和从检测获得的输入电流信号。然后将积分结果进行比较，以控制开关的占空比。因此，AC / DC电力转换器的输入电流和输入电压具有比例关系，它们的相位彼此相同。在该控制方法中使用的部件比现有技术的PFC电路简单。在一个芯片中集成更少的引脚很容易。本发明的装置具有高功率因数和低总谐波失真（THD）。

6. 发明授权

US06630711B2 Semiconductor structures with trench contacts 有权
公开(公告)号：US06630711B2
公开(公告)日：2003-10-07
申请号：US10187560
申请日：2002-07-02
申请人： Qin Huang
发明人： Qin Huang
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/41716 , H01L29/41766 , H01L29/6634 , H01L29/66348 , H01L29/7396 , H01L29/7397 , H01L29/7813
摘要： Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.

7. 发明授权

US06437399B1 Semiconductor structures with trench contacts 有权
标题翻译：具有沟槽触点的半导体结构
公开(公告)号：US06437399B1
公开(公告)日：2002-08-20
申请号：US09498476
申请日：2000-02-04
申请人： Qin Huang
发明人： Qin Huang
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/41716 , H01L29/41766 , H01L29/6634 , H01L29/66348 , H01L29/7396 , H01L29/7397 , H01L29/7813
摘要： Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.
摘要翻译：半导体结构如沟槽和平面MOSFET（UMOS），沟槽和平面IGBT以及使用沟槽建立导体的沟道MCT。还实现了对沟槽MOSFET中的寄生晶体管的改进的控制，并且相对于传统结构，单元尺寸和间距减小。

8. 发明授权

US6037628A Semiconductor structures with trench contacts 失效
公开(公告)号：US6037628A
公开(公告)日：2000-03-14
申请号：US885922
申请日：1997-06-30
申请人： Qin Huang
发明人： Qin Huang
IPC分类号： H01L21/331 , H01L21/336 , H01L29/417 , H01L29/739 , H01L29/78 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/7813 , H01L29/41716 , H01L29/6634 , H01L29/66348 , H01L29/7396 , H01L29/7397 , H01L29/7802 , H01L29/41766
摘要： Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.

9. 发明授权

US09163214B2 Method for culturing stem cells 有权
标题翻译：培养干细胞的方法
公开(公告)号：US09163214B2
公开(公告)日：2015-10-20
申请号：US13379651
申请日：2010-05-04
申请人： Dongmei Lai , Weiwei Cheng , Lihe Guo , Tianjin Liu , Lizhen Jiang , Qin Huang
发明人： Dongmei Lai , Weiwei Cheng , Lihe Guo , Tianjin Liu , Lizhen Jiang , Qin Huang
IPC分类号： C12N5/0735 , C12N5/074 , C12N5/095
CPC分类号： C12N5/0606 , C12N5/0607 , C12N2501/115 , C12N2501/235 , C12N2502/025
摘要： In the field of biological technology, a stem cell culture method is provided. The method includes preparing an amniotic epithelial cell feeder layer that is not treated to lose the division ability; and seeding the stem cells onto the amniotic epithelial cell feeder layer, and culturing in a culture medium. The stem cell culture method according to the present invention does not require the treatment of the feeder layer cells to lose the division ability, and is thus simple and safe, thereby effectively solving the problem of contamination caused by animal-derived ingredients in culture of human stem cells at present, greatly reducing the culture cost of the stem cells, and providing a safe, effective, and inexpensive stem cell culture method for the industrialization of the stem cells in the future.
摘要翻译：在生物技术领域，提供了干细胞培养方法。该方法包括制备未被处理以丧失分裂能力的羊膜上皮细胞饲养层; 并将干细胞接种到羊膜上皮细胞饲养层上，并在培养基中培养。根据本发明的干细胞培养方法不需要对饲养层细胞的处理以失去分裂能力，因此简单安全，从而有效地解决了动物来源的成分在人类培养中引起的污染问题目前干细胞大大降低了干细胞的培养成本，为将来干细胞工业化提供了一种安全，有效，廉价的干细胞培养方法。

10. 发明授权

US08823098B2 Structures for power transistor and methods of manufacture 有权
标题翻译：功率晶体管和制造方法的结构
公开(公告)号：US08823098B2
公开(公告)日：2014-09-02
申请号：US13414292
申请日：2012-03-07
申请人： Qin Huang , Yuming Bai
发明人： Qin Huang , Yuming Bai
IPC分类号： H01L29/66 , H01L27/088 , H01L29/788 , H01L29/78 , H01L29/423 , H01L29/739 , H01L29/10 , H01L29/08 , H01L29/417
CPC分类号： H01L29/7802 , H01L29/0834 , H01L29/0878 , H01L29/1095 , H01L29/41766 , H01L29/42376 , H01L29/66727 , H01L29/7396
摘要： The invention discloses a manufacture method and structure of a power transistor, comprising a lower electrode, a substrate, a drift region, two first conductive regions, two second conductive regions, two gate units, an isolation structure and an upper electrode. The two second conductive region are between the two first conductive regions and the drift region; the two gate units are on the two second conductive regions; the isolation structure covers the two gate units; the upper electrode covers the isolation structure and connects to the two first conductive regions and the two second conductive regions electrically. When the substrate is of the first conductive type, the structure can be used as MOSFET. When the substrate is of the second conductive type, the structure can be used as IGBT. This structure has a small gate electrode area, which leads to less Qg, Qgd and Rdson and improves device performance.
摘要翻译：本发明公开了一种功率晶体管的制造方法和结构，包括下电极，衬底，漂移区，两个第一导电区，两个第二导电区，两个栅极单元，隔离结构和上电极。两个第二导电区域在两个第一导电区域和漂移区域之间; 两个栅极单元在两个第二导电区域上; 隔离结构覆盖两个门单元; 上电极覆盖隔离结构并且电连接到两个第一导电区域和两个第二导电区域。当衬底是第一导电类型时，该结构可以用作MOSFET。当基板是第二导电类型时，该结构可以用作IGBT。该结构具有较小的栅电极面积，导致Qg，Qgd和Rdson较少，提高器件性能。

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