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1. 发明授权

US09614149B2 Coherent spin field effect transistor 有权
公开(公告)号：US09614149B2
公开(公告)日：2017-04-04
申请号：US14188736
申请日：2014-02-25
申请人： Quantum Devices, LLC
发明人： Jeffry A. Kelber , Peter Dowben
IPC分类号： H01L21/02 , H01L43/14 , H01L29/66 , H01L29/16 , H01L29/49 , H01L29/786
CPC分类号： H01L43/14 , H01L29/1606 , H01L29/4908 , H01L29/66742 , H01L29/66984 , H01L29/78603 , H01L29/78684
摘要： A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4 (111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.

2. 发明申请

US20140231888A1 Magneto-Electric Voltage Controlled Spin Transistors 有权
标题翻译：磁电压控制自旋晶体管
公开(公告)号：US20140231888A1
公开(公告)日：2014-08-21
申请号：US14182521
申请日：2014-02-18
申请人： Quantum Devices, LLC , University of North Texas
发明人： Jeffry A. Kelber , Christian Binek , Peter Arnold Bowden , Kirill Belashchenko
IPC分类号： H01L43/02 , H01L29/78
CPC分类号： H01L29/78 , B82Y10/00 , G11C11/161 , G11C11/5607 , H01F10/002 , H01F10/3268 , H01L29/1606 , H01L29/517 , H01L29/66984
摘要： The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
摘要翻译：本发明涉及一种包括氧化铬的栅极膜和可以是石墨烯，InP，GaAs，GaSb，PbS，MoS2，WS2，MoSe2，WSe2的导电沟道材料的薄膜及其混合物的磁电自旋FET。氧化铬或其他磁电和导电通道材料沿其间的界面紧密接触。所得到的磁电设备可以是电压控制的并且提供非易失性存储器。

3. 发明授权

US09379232B2 Magneto-electric voltage controlled spin transistors 有权
标题翻译：磁电压控制自旋晶体管
公开(公告)号：US09379232B2
公开(公告)日：2016-06-28
申请号：US14182521
申请日：2014-02-18
申请人： University of North Texas , Quantum Devices, LLC
发明人： Jeffry A. Kelber , Christian Binek , Peter Arnold Bowden , Kirill Belashchenko
IPC分类号： H01L21/02 , H01L29/78 , H01L29/66 , H01L29/51 , G11C11/56 , H01F10/00 , G11C11/16 , B82Y10/00 , H01L29/16 , H01F10/32
CPC分类号： H01L29/78 , B82Y10/00 , G11C11/161 , G11C11/5607 , H01F10/002 , H01F10/3268 , H01L29/1606 , H01L29/517 , H01L29/66984
摘要： The invention relates to a magneto-electric spin-FET including a gate film of chromia and a thin film of a conductive channel material which may be graphene, InP, GaAs, GaSb, PbS, MoS2, WS2, MoSe2, WSe2 and mixtures thereof. The chromia, or other magneto-electric, and conduction channel material are in intimate contact along an interface there between. The resulting magneto-electric device may be voltage-controlled and provide non-volatile memory.
摘要翻译：本发明涉及一种包括氧化铬的栅极膜和可以是石墨烯，InP，GaAs，GaSb，PbS，MoS2，WS2，MoSe2，WSe2的导电沟道材料的薄膜及其混合物的磁电自旋FET。氧化铬或其他磁电和导电通道材料沿其间的界面紧密接触。所得到的磁电设备可以是电压控制的并且提供非易失性存储器。

4. 发明申请

US20140170779A1 COHERENT SPIN FIELD EFFECT TRANSISTOR 有权
标题翻译：相干磁场效应晶体管
公开(公告)号：US20140170779A1
公开(公告)日：2014-06-19
申请号：US14188736
申请日：2014-02-25
申请人： Quantum Devices, LLC
发明人： Jeffry A. Kelber , Peter Dowben
IPC分类号： H01L43/14
CPC分类号： H01L43/14 , H01L29/1606 , H01L29/4908 , H01L29/66742 , H01L29/66984 , H01L29/78603 , H01L29/78684
摘要： A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4 (111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.
摘要翻译：通过在基板上沉积钴等铁磁性基底来提供相干自旋场效应晶体管。通过在约1000°K的温度下退火而在钴上形成磁性氧化物层，以提供几个单层厚的层。当栅极为钴时，所得的磁性氧化物为Co 3 O 4（111）。可以使用其它磁性材料和氧化物。石墨烯的几个ML场通过分子束外延沉积在氧化钴（III）上，并且源极和漏极沉积在基底材料上。所产生的设备是可扩展的，提供高开/关速率，在室温下是稳定的和可操作的，并且容易地用现有技术制造。

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