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1. 发明授权

US11069771B2 Semiconductor device 有权
公开(公告)号：US11069771B2
公开(公告)日：2021-07-20
申请号：US16613549
申请日：2018-05-17
申请人： ROHM CO., LTD.
发明人： Minoru Nakagawa , Yuki Nakano , Masatoshi Aketa , Masaya Ueno , Seigo Mori , Kenji Yamamoto
IPC分类号： H01L29/06 , H01L29/10 , H01L29/423 , H01L29/16 , H01L29/40
摘要： A semiconductor device includes a semiconductor layer of a first conductivity type having a first main surface at one side and a second main surface at another side, a trench gate structure including a gate trench formed in the first main surface of the semiconductor layer, and a gate electrode embedded in the gate trench via a gate insulating layer, a trench source structure including a source trench formed deeper than the gate trench and across an interval from the gate trench in the first main surface of the semiconductor layer, a source electrode embedded in the source trench, and a deep well region of a second conductivity type formed in a region of the semiconductor layer along the source trench, a ratio of a depth of the trench source structure with respect to a depth of the trench gate structure being not less than 1.5 and not more than 4.0, a body region of the second conductivity type formed in a region of a surface layer portion of the first main surface of the semiconductor layer between the gate trench and the source trench, a source region of the first conductivity type formed in a surface layer portion of the body region, and a drain electrode connected to the second main surface of the semiconductor layer.

2. 发明授权

US10964825B2 Semiconductor device 有权
公开(公告)号：US10964825B2
公开(公告)日：2021-03-30
申请号：US16850952
申请日：2020-04-16
申请人： ROHM CO., LTD.
发明人： Masatoshi Aketa , Yuta Yokotsuji
IPC分类号： H01L29/66 , H01L29/872 , H01L29/06 , H01L29/861 , H01L29/08 , H01L29/16 , H01L29/20 , H01L23/535 , H01L29/36
摘要： The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.

3. 发明授权

US10930798B2 Semiconductor device 有权
公开(公告)号：US10930798B2
公开(公告)日：2021-02-23
申请号：US16850952
申请日：2020-04-16
申请人： ROHM CO., LTD.
发明人： Masatoshi Aketa , Yuta Yokotsuji
IPC分类号： H01L29/66 , H01L29/872 , H01L29/06 , H01L29/861 , H01L29/08 , H01L29/16 , H01L29/20 , H01L23/535 , H01L29/36
摘要： The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.

4. 发明授权

US10833166B2 Semiconductor device including an MIS structure 有权
公开(公告)号：US10833166B2
公开(公告)日：2020-11-10
申请号：US16316855
申请日：2017-07-13
申请人： ROHM CO., LTD.
发明人： Kenji Yamamoto , Masatoshi Aketa , Hirokazu Asahara , Takashi Nakamura , Takuji Hosoi , Heiji Watanabe , Takayoshi Shimura , Shuji Azumo , Yusaku Kashiwagi
IPC分类号： H01L29/51 , H01L29/423 , H01L29/78 , H01L29/16 , H01L29/20 , H01L29/24
摘要： A semiconductor device has an MIS structure that includes a semiconductor layer, a gate insulating film on the semiconductor layer, and a gate electrode on the gate insulating film. The gate insulating film has a layered structure that includes a base SiO2 layer and a high-k layer on the base SiO2 layer and containing Hf. The gate electrode has a portion made of a metal material having a work function of higher than 4.6 eV, the portion being in contact with at least the high-k layer.

5. 发明授权

US10784349B2 Semiconductor device 有权
公开(公告)号：US10784349B2
公开(公告)日：2020-09-22
申请号：US16044086
申请日：2018-07-24
申请人： ROHM CO., LTD.
发明人： Seigo Mori , Masatoshi Aketa
IPC分类号： H01L29/15 , H01L29/16 , H01L29/66 , H01L29/739 , H01L29/08 , H01L29/06 , H01L29/10 , H01L29/78 , H01L27/04 , H01L29/12 , H01L27/07
摘要： A semiconductor device according to the present invention includes a semiconductor layer of SiC of a first conductivity type, a plurality of body regions of a second conductivity type formed in the surface portion of the semiconductor layer with each body region forming a unit cell, a source region of the first conductivity type formed in the inner portion of the body region, a gate electrode facing the body region across a gate insulating film, a drain region of the first conductivity type and a collector region of the second conductivity type formed in the rear surface portion of the semiconductor layer such that the drain region and the collector region adjoin each other, and a drift region between the body region and the drain region, wherein the collector region is formed such that the collector region covers a region including at least two unit cells in the x-axis direction along the surface of the semiconductor layer.

6. 发明授权

US09685503B2 Semiconductor device 有权
公开(公告)号：US09685503B2
公开(公告)日：2017-06-20
申请号：US14988636
申请日：2016-01-05
申请人： ROHM CO., LTD.
发明人： Masatoshi Aketa
IPC分类号： H01L29/16 , H01L29/06 , H01L29/66 , H01L29/872 , H01L29/10 , H01L29/20 , H01L29/47
CPC分类号： H01L29/0619 , H01L29/1095 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/47 , H01L29/6606 , H01L29/872 , Y02B10/30
摘要： A semiconductor device includes a first conductivity type semiconductor layer that includes a wide bandgap semiconductor and a surface. A trench, including a side wall and a bottom wall, is formed in the semiconductor layer surface, and a Schottky electrode is connected to the surface. Opposite edge portions of the bottom wall of the trench each include a radius of curvature, R, satisfying the expression 0.01 L

7. 发明授权

US09548353B2 Wide band-gap semiconductor device including schotky electrode and method for producing same 有权
标题翻译：包括schotky电极的宽带隙半导体器件及其制造方法
公开(公告)号：US09548353B2
公开(公告)日：2017-01-17
申请号：US14792991
申请日：2015-07-07
申请人： ROHM CO., LTD.
发明人： Masatoshi Aketa , Yuta Yokotsuji
IPC分类号： H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07 , H01L31/108 , H01L29/06 , H01L29/16 , H01L29/872 , H01L21/04 , H01L21/265 , H01L29/20 , H01L29/66 , H01L29/08 , H01L29/36
CPC分类号： H01L29/063 , H01L21/0415 , H01L21/046 , H01L21/26546 , H01L29/0611 , H01L29/0619 , H01L29/0623 , H01L29/08 , H01L29/1608 , H01L29/2003 , H01L29/36 , H01L29/66143 , H01L29/66212 , H01L29/872
摘要： A semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode being in contact with a surface of the semiconductor layer. The semiconductor layer includes a drift layer that forms the surface of the semiconductor layer and a high-resistance layer that is formed on a surface layer portion of the drift layer and that has higher resistance than the drift layer. The high-resistance layer is formed by implanting impurity ions from the surface of the semiconductor layer and then undergoing annealing treatment at less than 1500° C.
摘要翻译：本发明的半导体器件包括由宽带隙半导体构成的半导体层和与半导体层的表面接触的肖特基电极。半导体层包括形成半导体层的表面的漂移层和形成在漂移层的表面层部分上并且具有比漂移层更高的电阻的高电阻层。通过从半导体层的表面注入杂质离子然后在小于1500℃进行退火处理来形成高电阻层。

8. 发明授权

US11355651B2 Semiconductor device 有权
公开(公告)号：US11355651B2
公开(公告)日：2022-06-07
申请号：US17149464
申请日：2021-01-14
申请人： ROHM CO., LTD.
发明人： Masatoshi Aketa , Yuta Yokotsuji
IPC分类号： H01L29/872 , H01L29/06 , H01L29/861 , H01L29/16 , H01L29/20 , H01L23/535 , H01L29/36 , H01L29/08 , H01L29/66
摘要： The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky electrode formed to come into contact with a surface of the semiconductor layer, and has a threshold voltage Vth of 0.3 V to 0.7 V and a leakage current Jr of 1×10−9 A/cm2 to 1×10−4 A/cm2 in a rated voltage VR.

9. 发明授权

US11088272B2 Semiconductor device 有权
公开(公告)号：US11088272B2
公开(公告)日：2021-08-10
申请号：US16479886
申请日：2018-01-25
申请人： ROHM CO., LTD.
发明人： Takui Sakaguchi , Masatoshi Aketa , Yuki Nakano
IPC分类号： H01L29/78 , H01L21/04 , H01L29/06 , H01L29/16 , H01L29/66
摘要： A semiconductor device includes a semiconductor layer having a first main surface on one side and a second main surface on the other side, a unit cell including a diode region of a first conductivity type formed in a surface layer portion of the first main surface of the semiconductor layer, a well region of a second conductivity type formed in the surface layer portion of the first main surface of the semiconductor layer along a peripheral edge of the diode region, and a first conductivity type region formed in a surface layer portion of the well region, a gate electrode layer facing the well region and the first conductivity type region through a gate insulating layer and a first main surface electrode covering the diode region and the first conductivity type region on the first main surface of the semiconductor layer, and forming a Schottky junction with the diode region and an ohmic junction with the first conductivity type region.

10. 发明授权

US10923562B2 Semiconductor device, and method for manufacturing semicondcutor device 有权
公开(公告)号：US10923562B2
公开(公告)日：2021-02-16
申请号：US16325963
申请日：2017-08-10
申请人： ROHM CO., LTD.
发明人： Seigo Mori , Masatoshi Aketa
IPC分类号： H01L29/06 , H01L21/76 , H01L21/322 , H01L21/28 , H01L29/78 , H01L29/12 , H01L21/02 , H01L21/04 , H01L21/78 , H01L23/31 , H01L23/495 , H01L29/10 , H01L29/16 , H01L29/32 , H01L29/40 , H01L29/66 , H01L29/20 , H01L29/739 , H02M5/293
摘要： There is provided a reverse-blocking semiconductor device that has a simple configuration, that is capable of improving a yield in a manufacturing process, and that secures a reverse withstand voltage by using a Schottky junction, and there is provided a method for manufacturing the reverse-blocking semiconductor device. A semiconductor device is provided that includes a first conductivity type semiconductor layer that has a front surface, a rear surface on an opposite side of the front surface, and an end surface, a MIS transistor structure formed at a front-surface portion of the semiconductor layer, a first electrode that forms a Schottky junction with a part of the semiconductor layer in the rear surface of the semiconductor layer, and an electric-field relaxation region that is formed to reach the rear surface from the front surface of the semiconductor layer in a peripheral region surrounding an active region in which the MIS transistor structure is formed and that is either a high-resistance region having higher resistance than the semiconductor layer or a second conductivity type impurity region.

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