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1. 发明授权

US09362294B2 Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device 有权
公开(公告)号：US09362294B2
公开(公告)日：2016-06-07
申请号：US14516639
申请日：2014-10-17
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao
IPC分类号： H01L27/115 , H01L49/02
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/57 , H01L28/60 , H01L28/65 , H01L28/75
摘要： The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized.

2. 发明授权

US09331006B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09331006B2
公开(公告)日：2016-05-03
申请号：US14224489
申请日：2014-03-25
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao , Yasuhiro Fuwa
IPC分类号： H01L23/13 , H01L25/16 , H01L23/495 , H01L23/14 , H01L23/24 , H01L23/31 , H01L23/498
CPC分类号： B81B7/0074 , B81B2201/0235 , B81B2203/0315 , H01L23/13 , H01L23/147 , H01L23/24 , H01L23/3128 , H01L23/3135 , H01L23/49579 , H01L23/49816 , H01L23/49827 , H01L25/16 , H01L2224/16225 , H01L2224/97 , H01L2924/14 , H01L2924/1461 , H01L2924/15156 , H01L2924/15165 , H01L2924/15192 , H01L2924/15311 , H01L2924/15321 , H01L2924/157 , H01L2924/18161 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2924/19105 , H01L2224/81 , H01L2924/00
摘要： A semiconductor device includes a substrate that is made of a semiconductor material and has a main surface formed with a recess. The semiconductor device also includes a wiring layer formed on the substrate, an electronic element housed in the recess, and a sealing resin covering at least a part of the electronic element.
摘要翻译：半导体器件包括由半导体材料制成并具有形成有凹部的主表面的衬底。半导体器件还包括形成在基板上的布线层，容纳在凹部中的电子元件以及覆盖电子元件的至少一部分的密封树脂。

3. 发明授权

US10297468B2 Semiconductor device with recess and method of making 有权
公开(公告)号：US10297468B2
公开(公告)日：2019-05-21
申请号：US15884926
申请日：2018-01-31
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao , Yasuhiro Fuwa
IPC分类号： H01L27/14 , H01L21/52 , H01L25/16 , H01L21/56 , H01L23/13 , H01L23/14 , H01L23/498 , H01L23/31 , H01L25/065 , H01L25/10
摘要： A semiconductor device is provided with a substrate made of a semiconductor material, an interconnect layer, at least one electronic element, and a sealing resin. The substrate has a main surface and a pair of lateral surfaces that are orthogonal to the main surface and face in opposite directions to each other. A recessed portion that is recessed from the main surface and has an opening portion that opens on at least one of the pair of lateral surfaces is formed in the substrate. The interconnect layer is formed on the substrate. The electronic element is an orientation sensor, for example, and is accommodated in the recessed portion of the substrate. The sealing resin covers the electronic element.

4. 发明授权

US09515174B2 Method of manufacturing a semiconductor storage device 有权
标题翻译：制造半导体存储装置的方法
公开(公告)号：US09515174B2
公开(公告)日：2016-12-06
申请号：US14054298
申请日：2013-10-15
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao
IPC分类号： H01L21/336 , H01L29/66 , H01L21/28 , H01L21/762 , H01L27/115 , H01L29/423
CPC分类号： H01L29/66825 , H01L21/28273 , H01L21/76232 , H01L27/11521 , H01L29/42324
摘要： A method for manufacturing a semiconductor storage device includes forming a first insulating film on a semiconductor substrate; forming a first conductive layer; forming a trench in the semiconductor substrate and the first conductive layer by etching; forming a deposition layer by depositing an insulating material in the trench; removing by etching a side portion of the deposition layer to form a side surface that has a flat surface and a curved surface with a lower edge that is in contact with a side surface of the first conductive layer and to form a gap between the curved and the side surfaces; forming a second conductive layer; removing the deposition layer until at least the curved surface of the side surface is exposed to form an embedded insulator in the trench; forming a second insulating film; and forming a control gate on the embedded insulator and the second insulating film.
摘要翻译：半导体存储装置的制造方法包括在半导体基板上形成第一绝缘膜; 形成第一导电层; 通过蚀刻在半导体衬底和第一导电层中形成沟槽; 通过在沟槽中沉积绝缘材料形成沉积层; 通过蚀刻沉积层的侧部以形成具有平坦表面的侧表面和具有与第一导电层的侧表面接触的下边缘的曲面，并且在弯曲和侧面; 形成第二导电层; 去除沉积层直到暴露侧表面的至少弯曲表面以在沟槽中形成嵌入的绝缘体; 形成第二绝缘膜; 以及在所述嵌入式绝缘体和所述第二绝缘膜上形成控制栅极。

5. 发明授权

US09406684B2 Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device 有权
标题翻译：包括电极下层和电极上层的半导体器件和半导体器件的制造方法
公开(公告)号：US09406684B2
公开(公告)日：2016-08-02
申请号：US14516620
申请日：2014-10-17
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao
IPC分类号： H01L27/115 , H01L49/02
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/55 , H01L28/57 , H01L28/60 , H01L28/65 , H01L28/75
摘要： The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized.
摘要翻译：根据本发明的半导体器件包括堆叠在强电介质膜上的铁电体膜和电极。电极具有与铁电体膜接触的电极下层和堆叠在电极下层上的电极上层的多层结构。电极上层由相对于铁电体膜和电极下层的材料具有蚀刻选择比的导电材料制成。电极上层的上表面被平坦化。

6. 发明授权

US09362295B2 Semiconductor storage device and method for manufacturing the semiconductor storage device 有权
标题翻译：半导体存储装置及半导体存储装置的制造方法
公开(公告)号：US09362295B2
公开(公告)日：2016-06-07
申请号：US14615455
申请日：2015-02-06
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao
IPC分类号： H01L21/02 , H01L27/115 , H01L21/768 , H01L49/02
CPC分类号： H01L27/11507 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02266 , H01L21/02271 , H01L21/02274 , H01L21/32 , H01L21/76849 , H01L21/7687 , H01L27/11504 , H01L28/55 , H01L28/57 , H01L28/60 , H01L28/82
摘要： A semiconductor-storage-device manufacturing method of the present invention is a method for manufacturing a semiconductor storage device provided with a ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode, and the method includes a step of embedding a first metal plug and a second metal plug in an insulating layer; a step of forming a covering layer that covers at least the second metal plug while securing a part that comes into electric contact with the first metal plug; a step of forming a deposit structure by sequentially depositing a material for the lower electrode, a material for the ferroelectric film, and a material for the upper electrode after forming the covering layer; and a step of forming the ferroelectric capacitor by etching and removing other parts except a part of the deposit structure such that the part of the deposit structure remains on the first metal plug.
摘要翻译：本发明的半导体存储元件的制造方法是具有下电极，强电介质膜和上电极的强电介质电容器的半导体存储元件的制造方法，其特征在于，包括：金属插塞和绝缘层中的第二金属插塞; 形成覆盖层的步骤，所述覆盖层至少覆盖所述第二金属插塞，同时确保与所述第一金属插塞电接触的部分; 在形成覆盖层之后，依次沉积下电极材料，铁电薄膜材料和上电极材料，形成沉积结构的步骤; 以及通过蚀刻除去所述沉积结构的一部分以外的其它部分使得所述沉积结构的所述部分保留在所述第一金属插塞上而形成所述强电介质电容器的步骤。

7. 发明授权

US09337090B2 Semiconductor device 有权
公开(公告)号：US09337090B2
公开(公告)日：2016-05-10
申请号：US14876640
申请日：2015-10-06
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao , Satoshi Kageyama , Masaru Naitou
IPC分类号： H01L23/528 , H01L21/768
CPC分类号： H01L23/528 , B23D51/125 , H01L21/76802 , H01L21/7684 , H01L21/76877 , H01L21/76895 , H01L23/481 , H01L23/522 , H01L23/5222 , H01L23/5226 , H01L23/53228 , H01L23/5329 , H01L24/05 , H01L2924/01013 , H01L2924/01029 , H01L2924/01078 , H01L2924/01079
摘要： The semiconductor device according to the present invention includes a semiconductor substrate, a first insulating layer laminated on the semiconductor substrate, a first metal wiring pattern embedded in a wire-forming region of the first insulating layer, a second insulating layer laminated on the first insulating layer, a second metal wiring pattern embedded in a wire-forming region of the second insulating layer and first dummy metal patterns embedded each in a wire-opposed region opposing to the wire-forming region of the second insulating layer and in a non-wire-opposed region opposing to a non-wire-forming region other than the wire-forming region of the second insulating layer, the wire-opposed region and the non-wire-opposed region each in a non-wire-forming region other than the wire-forming region of the first insulating layer.

8. 发明授权

US09490207B2 Semiconductor device having a copper wire within an interlayer dielectric film 有权
标题翻译：在层间绝缘膜内具有铜线的半导体器件
公开(公告)号：US09490207B2
公开(公告)日：2016-11-08
申请号：US13937459
申请日：2013-07-09
申请人： ROHM CO., LTD.
发明人： Satoshi Kageyama , Yuichi Nakao
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L23/528 , H01L23/532
CPC分类号： H01L23/528 , H01L23/5283 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.
摘要翻译：根据本发明的半导体器件包括半导体层，形成在半导体层上的层间电介质膜，在具有宽度不大于0.4μm的金属材料的层间绝缘膜上形成的导线，以及广泛部分一体形成在金属丝上，从金属丝沿其宽度方向延伸。

9. 发明授权

US10304842B2 Semiconductor device including an electrode lower layer and an electrode upper layer and method of manufacturing semiconductor device 有权
公开(公告)号：US10304842B2
公开(公告)日：2019-05-28
申请号：US15164505
申请日：2016-05-25
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao
IPC分类号： H01L27/115 , H01L27/11507 , H01L49/02 , H01L27/11502
摘要： The semiconductor device according to the present invention includes a ferroelectric film and an electrode stacked on the ferroelectric film. The electrode has a multilayer structure of an electrode lower layer in contact with the ferroelectric film and an electrode upper layer stacked on the electrode lower layer. The electrode upper layer is made of a conductive material having an etching selection ratio with respect to the materials for the ferroelectric film and the electrode lower layer. The upper surface of the electrode upper layer is planarized.

10. 发明授权

US09916991B2 Semiconductor device with recess and method of making 有权
公开(公告)号：US09916991B2
公开(公告)日：2018-03-13
申请号：US14639588
申请日：2015-03-05
申请人： ROHM CO., LTD.
发明人： Yuichi Nakao , Yasuhiro Fuwa
IPC分类号： H01L27/14 , H01L21/52 , H01L25/16 , H01L21/56 , H01L23/13 , H01L23/14 , H01L23/498 , H01L23/31
CPC分类号： H01L21/52 , H01L21/56 , H01L23/13 , H01L23/147 , H01L23/3121 , H01L23/49827 , H01L25/165 , H01L2224/16225 , H01L2224/16227 , H01L2924/15151 , H01L2924/15156 , H01L2924/15311 , H01L2924/15333
摘要： A semiconductor device is provided with a substrate made of a semiconductor material, an interconnect layer, at least one electronic element, and a sealing resin. The substrate has a main surface and a pair of lateral surfaces that are orthogonal to the main surface and face in opposite directions to each other. A recessed portion that is recessed from the main surface and has an opening portion that opens on at least one of the pair of lateral surfaces is formed in the substrate. The interconnect layer is formed on the substrate. The electronic element is an orientation sensor, for example, and is accommodated in the recessed portion of the substrate. The sealing resin covers the electronic element.

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