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1. 发明授权

US08406961B2 Reconfigurable vehicle user interface system 有权
标题翻译：可重构车用户界面系统
公开(公告)号：US08406961B2
公开(公告)日：2013-03-26
申请号：US12617987
申请日：2009-11-13
申请人： Rabindra Pathak , Peter Veprek , Kem Gallione , Tsuyoshi Tanaka
发明人： Rabindra Pathak , Peter Veprek , Kem Gallione , Tsuyoshi Tanaka
IPC分类号： B60R22/00
CPC分类号： G06F3/03547 , B60W2550/402 , G06F3/0482 , G06F3/0485 , G06F3/04883 , G06F3/04886 , G06F2203/0339
摘要： A reconfigurable vehicle user interface system is presented. A vehicle user interface has a touch sensitive input devices such as touchpads and a touch screen that have specific function commands mapped to them. A user can select which function commands are mapped to which portions of the touch screen. This allows a user to customize the steering wheel function commands.
摘要翻译：提出了一种可重构车辆用户界面系统。车辆用户界面具有诸如触摸板和触摸屏的触敏输入设备，其具有映射到它们的特定功能命令。用户可以选择哪些功能命令映射到触摸屏的哪些部分。这允许用户定制方向盘功能命令。

2. 发明申请

US20100268426A1 RECONFIGURABLE VEHICLE USER INTERFACE SYSTEM 有权
标题翻译：可重新配置的车辆用户界面系统
公开(公告)号：US20100268426A1
公开(公告)日：2010-10-21
申请号：US12617987
申请日：2009-11-13
申请人： Rabindra Pathak , Peter Veprek , Kem Gallione , Tsuyoshi Tanaka
发明人： Rabindra Pathak , Peter Veprek , Kem Gallione , Tsuyoshi Tanaka
IPC分类号： B60W50/08 , G06F3/033 , G06F3/041 , G06F7/00 , B60W10/00 , G06F3/048
CPC分类号： G06F3/03547 , B60W2550/402 , G06F3/0482 , G06F3/0485 , G06F3/04883 , G06F3/04886 , G06F2203/0339
摘要： A reconfigurable vehicle user interface system is presented. A vehicle user interface has a touch sensitive input devices such as touchpads and a touch screen that have specific function commands mapped to them. A user can select which function commands are mapped to which portions of the touch screen. This allows a user to customize the steering wheel function commands.
摘要翻译：提出了一种可重构车辆用户界面系统。车辆用户界面具有诸如触摸板和触摸屏的触敏输入设备，其具有映射到它们的特定功能命令。用户可以选择哪些功能命令映射到触摸屏的哪些部分。这允许用户定制方向盘功能命令。

3. 外观设计

USD820517S1 Comb 有权
公开(公告)号：USD820517S1
公开(公告)日：2018-06-12
申请号：US35502913
申请日：2017-04-12
申请人： Tsuyoshi Tanaka
设计人： Tsuyoshi Tanaka

4. 发明授权

US09103781B2 Sample separation and adsorption appliance 有权
标题翻译：样品分离和吸附装置
公开(公告)号：US09103781B2
公开(公告)日：2015-08-11
申请号：US14343528
申请日：2011-09-12
申请人： Kouji Kusumoto , Yutaka Unuma , Hideki Kinoshita , Shinichi Goto , Tsuyoshi Tanaka , Yuji Maruo
发明人： Kouji Kusumoto , Yutaka Unuma , Hideki Kinoshita , Shinichi Goto , Tsuyoshi Tanaka , Yuji Maruo
IPC分类号： G01N27/447
CPC分类号： G01N27/44773 , G01N27/44739
摘要： A sample separation and adsorption appliance (100) includes a negative electrode (2), a positive electrode (3), a sample separation unit (6) that has a first opening (17) opened to a side facing the negative electrode (2) and a second opening (18) opened to a side facing the positive electrode (3), the sample separation unit containing a separation gel (7), and a slit structure (8) including a slit (1) at a position facing the second opening (18). A transfer film (9) is arranged between the second opening (18) and the slit (1).
摘要翻译：样品分离吸附装置（100）包括负极（2），正极（3），样品分离单元（6），其具有朝向负极（2）的一侧开口的第一开口（17）以及向与所述正极（3）相对的一侧开放的第二开口（18），所述样品分离单元包含分离凝胶（7），以及狭缝结构（8），所述狭缝结构（8）在面向所述第二开（18）。转印膜（9）布置在第二开口（18）和狭缝（1）之间。

5. 发明授权

US08796461B2 1,2,4,5-substituted phenyl compound, method for producing same and organic electroluminescent device comprising same as constituent 有权
标题翻译： 1,2,4,5-取代苯基化合物，其制备方法和包含其组成的有机电致发光器件
公开(公告)号：US08796461B2
公开(公告)日：2014-08-05
申请号：US13634943
申请日：2011-03-16
申请人： Tsuyoshi Tanaka , Mayumi Abe , Nobumichi Arai , Naoki Uchida , Takashi Iida
发明人： Tsuyoshi Tanaka , Mayumi Abe , Nobumichi Arai , Naoki Uchida , Takashi Iida
IPC分类号： C07D213/04 , C07D213/06
CPC分类号： C07D213/06 , C09K11/06 , C09K2211/1007 , C09K2211/1029 , H01L51/0067 , H01L51/5048 , H05B33/10
摘要： A 1,2,4,5-substituted phenyl compound represented by the formula (1): wherein one of X1-X5 is nitrogen and the remainders of X1-X5 are carbon; R1 and R2 represent hydrogen, C1-6 alkyl or C1-6 alkoxy; R3 and R4 represent C1-6 alkyl or C1-6 alkoxy; and m is an integer of 0-4, and n is an integer of 0-5. This compound is useful as a constituent for an organic electroluminescent device.
摘要翻译：由式（1）表示的1,2,4,5-取代苯基化合物：其中X 1 -X 5中的一个为氮，X 1 -X 5的残基为碳; R1和R2表示氢，C1-6烷基或C1-6烷氧基; R3和R4代表C1-6烷基或C1-6烷氧基; m为0-4的整数，n为0〜5的整数。该化合物可用作有机电致发光器件的组分。

6. 发明授权

US08665477B2 Print system, printing apparatus, and computer program product 有权
标题翻译：打印系统，打印设备和计算机程序产品
公开(公告)号：US08665477B2
公开(公告)日：2014-03-04
申请号：US13311930
申请日：2011-12-06
申请人： Tsuyoshi Tanaka
发明人： Tsuyoshi Tanaka
IPC分类号： G06F15/00
CPC分类号： G06K15/181 , G06F3/1205 , G06F3/1228 , G06F3/1232 , G06F3/1292 , G06K15/1801 , G06K15/4005
摘要： In a print system, print data and print setting information are transmitted from a terminal to a printing apparatus via an email, and the printing apparatus performs a printing process of the print data based on the print setting information. The printing apparatus includes: a first receiving unit that receives a print request email from the terminal; a transmission unit that transmits, to the terminal, a reply email that includes allowable print setting information representing information on designable print settings; and a second receiving unit that receives a second reply email having been transmitted from the terminal and including print setting information designated from among the allowable print setting information.
摘要翻译：在打印系统中，通过电子邮件将打印数据和打印设置信息从终端传送到打印设备，并且打印设备基于打印设置信息执行打印数据的打印处理。打印装置包括：第一接收单元，从终端接收打印请求电子邮件; 发送单元，向终端发送包含表示关于可设计的打印设置的信息的允许打印设置信息的回复电子邮件; 以及第二接收单元，其接收从终端发送的第二应答电子邮件，并且包括从可允许打印设置信息中指定的打印设置信息。

7. 发明授权

US08304812B2 Terahertz wave radiating element 失效
标题翻译：太赫兹波辐射元件
公开(公告)号：US08304812B2
公开(公告)日：2012-11-06
申请号：US13051455
申请日：2011-03-18
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Shinichi Takigawa , Tsuyoshi Tanaka
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Shinichi Takigawa , Tsuyoshi Tanaka
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/41725 , H01L29/42316
摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.
摘要翻译：太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。

8. 发明申请

US20120153355A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20120153355A1
公开(公告)日：2012-06-21
申请号：US13402631
申请日：2012-02-22
申请人： Hidekazu UMEDA , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Hidekazu UMEDA , Yoshiharu Anda , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/78
CPC分类号： H01L29/2003 , H01L29/1066 , H01L29/4175 , H01L29/66462 , H01L29/7787 , H01L29/861
摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.
摘要翻译：氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。氮化物半导体层包括元件区域和围绕元件区域的隔离区域。元件区域形成在正常区域上。界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

9. 发明申请

US20120126290A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20120126290A1
公开(公告)日：2012-05-24
申请号：US13360275
申请日：2012-01-27
申请人： Yasuhiro UEMOTO , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
发明人： Yasuhiro UEMOTO , Masahiro Hikita , Tetsuzo Ueda , Tsuyoshi Tanaka , Daisuke Ueda
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/4175 , H01L29/7783
摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.
摘要翻译：氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域形成有具有比控制区域更高的电阻的高电阻区域。

10. 发明授权

US08003975B2 Semiconductor integrated circuit device and method for fabricating the same 有权
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US08003975B2
公开(公告)日：2011-08-23
申请号：US11600101
申请日：2006-11-16
申请人： Tetsuzo Ueda , Tsuyoshi Tanaka
发明人： Tetsuzo Ueda , Tsuyoshi Tanaka
IPC分类号： H01L31/00
CPC分类号： H01L21/76898 , H01L21/6835 , H01L23/66 , H01L29/2003 , H01L29/4175 , H01L29/7787 , H01L2221/6835 , H01L2223/6627 , H01L2924/0002 , H01L2924/14 , H01L2924/19032 , H01L2924/19041 , H01L2924/19042 , H01L2924/30105 , H01L2924/00
摘要： A semiconductor integrated circuit device includes: a semiconductor layer having a principal surface on which a source electrode, a drain electrode and a gate electrode are formed and having a first through hole; an insulating film formed in contact with the semiconductor layer and having a second through hole; a first interconnection formed on the semiconductor layer through the first through hole and connected to one of the source electrode, the drain electrode and the gate electrode which is exposed in the first through hole; and a second interconnection formed on the insulating film through the second through hole and connected to another of the source electrode, the drain electrode and the gate electrode which is exposed in the second through hole. The first interconnection and the second interconnection face each other and form a microstrip line.
摘要翻译：半导体集成电路器件包括：半导体层，其主表面上形成有源电极，漏电极和栅电极，并具有第一通孔; 形成为与所述半导体层接触并具有第二通孔的绝缘膜; 通过所述第一通孔形成在所述半导体层上并与所述第一通孔露出的所述源电极，所述漏电极和所述栅电极之一连接的第一互连; 以及通过第二通孔形成在绝缘膜上的第二互连，并与第二通孔中露出的源电极，漏电极和栅电极中的另一个连接。第一互连和第二互连彼此面对并形成微带线。

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