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1. 发明申请

US20100136728A1 LIGHT-EMITTING DIODE CHIP WITH HIGH LIGHT EXTRACTION AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US20100136728A1
公开(公告)日：2010-06-03
申请号：US12701336
申请日：2010-02-05
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L33/46 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

2. 发明授权

US08895332B2 Light-emitting diode chip with high light extraction and method for manufacturing the same 有权
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US08895332B2
公开(公告)日：2014-11-25
申请号：US12701336
申请日：2010-02-05
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L21/00 , H01L33/00 , H01L33/22 , H01L33/44
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

3. 发明申请

US20090078952A1 LIGHT-EMITTING CHIP DEVICE WITH HIGH THERMAL CONDUCTIVITY 有权
标题翻译：具有高导热性的发光芯片器件
公开(公告)号：US20090078952A1
公开(公告)日：2009-03-26
申请号：US12047165
申请日：2008-03-12
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/46
摘要： This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.
摘要翻译：本发明提供了一种具有高导热性的发光芯片器件，其包括外延芯片，设置在外延芯片的顶表面上的电极和与电极配合的U形电极基底，以向外延芯片提供电能用于通过电光效应产生光。外延芯片包括具有粗糙化顶表面和粗糙化底表面的衬底和外延层结构，用于改善从外延芯片中提取的光。在衬底和外延层结构之间形成导热透明反射层。电极基体围绕基板，透明反射层和外延层结构的第一包层，以便于当外延芯片发光时产生的内部废热的耗散。提供了本发明的芯片装置的制造方法。

4. 发明授权

US07858999B2 Light-emitting chip device with high thermal conductivity 有权
标题翻译：具有高导热性的发光芯片器件
公开(公告)号：US07858999B2
公开(公告)日：2010-12-28
申请号：US12047165
申请日：2008-03-12
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L29/22
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/46
摘要： This invention provides a light-emitting chip device with high thermal conductivity, which includes an epitaxial chip, an electrode disposed on a top surface of the epitaxial chip and a U-shaped electrode base cooperating with the electrode to provide electric energy to the epitaxial chip for generating light by electric-optical effect. The epitaxial chip includes a substrate and an epitaxial-layer structure with a roughening top surface and a roughening bottom surface for improving light extracted out of the epitaxial chip. A thermal conductive transparent reflective layer is formed between the substrate and the epitaxial-layer structure. The electrode base surrounds the substrate, the transparent reflective layer and a first cladding layer of the epitaxial-layer structure to facilitate the dissipation of the internal waste heat generated when the epitaxial chip emitting light. A method for manufacturing the chip device of the present invention is provided.
摘要翻译：本发明提供了一种具有高导热性的发光芯片器件，其包括外延芯片，设置在外延芯片的顶表面上的电极和与电极配合的U形电极基底，以向外延芯片提供电能用于通过电光效应产生光。外延芯片包括具有粗糙化顶表面和粗糙化底表面的衬底和外延层结构，用于改善从外延芯片中提取的光。在衬底和外延层结构之间形成导热透明反射层。电极基体围绕基板，透明反射层和外延层结构的第一包层，以便于当外延芯片发光时产生的内部废热的耗散。提供了本发明的芯片装置的制造方法。

5. 发明申请

US20090127575A1 Light-Emitting Diode Chip With High Light Extraction And Method For Manufacturing The Same 审中-公开
标题翻译：具有高光提取的发光二极管芯片及其制造方法
公开(公告)号：US20090127575A1
公开(公告)日：2009-05-21
申请号：US12039563
申请日：2008-02-28
申请人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
发明人： Ray-Hua Horng , Dong-Sing Wuu , Shao-Hua Huang , Chuang-Yu Hsieh , Chao-Kun Lin
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L29/22 , H01L33/0079 , H01L33/44
摘要： This invention provides a light-emitting diode chip with high light extraction, which includes a substrate, an epitaxial-layer structure for generating light by electric-optical effect, a transparent reflective layer sandwiched between the substrate and the epitaxial-layer structure, and a pair of electrodes for providing power supply to the epitaxial-layer structure. A bottom surface and top surface of the epitaxial-layer structure are roughened to have a roughness not less than 100 nm root mean square (rms). The light generated by the epitaxial-layer structure is hence effectively extracted out. A transparent reflective layer not more than 5 μm rms is formed as an interface between the substrate and the epitaxial-layer structure. The light toward the substrate is more effectively reflected upward. The light extraction and brightness are thus enhanced. Methods for manufacturing the light-emitting diode chip of the present invention are also provided.
摘要翻译：本发明提供一种具有高光提取的发光二极管芯片，其包括基板，通过电光效应产生光的外延层结构，夹在基板和外延层结构之间的透明反射层，以及一对用于向外延层结构提供电源的电极。外延层结构的底表面和顶表面被粗糙化以具有不小于100nm均方根（rms）的粗糙度。因此外延层结构产生的光被有效地抽出。形成不大于5μm的透明反射层作为衬底和外延层结构之间的界面。朝向基板的光更有效地向上反射。因此光提取和亮度增强。还提供了用于制造本发明的发光二极管芯片的方法。

6. 发明申请

US20200020825A1 Micro Light Emitting Diode 审中-公开
公开(公告)号：US20200020825A1
公开(公告)日：2020-01-16
申请号：US16447050
申请日：2019-06-20
申请人： Long Yang , Chao-Kun Lin
发明人： Long Yang , Chao-Kun Lin
IPC分类号： H01L33/00 , H01L25/075 , H01L33/12 , H01L33/32 , H01L33/16 , H01L33/62 , H01L33/40 , H01L33/30
摘要： Embodiments generally relate to micro-device arrays. In some embodiments, an array comprises a substrate and a plurality of micro-devices. Each micro-device is suspended over a cavity in the substrate by at least one lateral hinge attached to a side post formed into the substrate. Each micro-device comprises a bonding layer; a metal contact; semiconductor device layers; and a buffer layer. The semiconductor device layers may comprise GaN-based LED layers; wherein the buffer layer comprises AlGaN; and wherein the substrate comprises (111) oriented Silicon. In other cases, the semiconductor device layers may comprise InGaAsP-based LED layers; wherein the buffer layer comprises InGaP; and wherein the substrate comprises GaAs.

7. 发明授权

US09012921B2 Light emitting devices having light coupling layers 有权
标题翻译：具有光耦合层的发光器件
公开(公告)号：US09012921B2
公开(公告)日：2015-04-21
申请号：US13249184
申请日：2011-09-29
申请人： Chao-Kun Lin , Li Yan , Chih-Wei Chuang
发明人： Chao-Kun Lin , Li Yan , Chih-Wei Chuang
IPC分类号： H01L33/32 , H01L33/22 , H01L33/00
CPC分类号： H01L33/0075 , H01L33/0025 , H01L33/0079 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/405 , H01L2924/00 , H01L2924/0002 , H01L2933/0016 , H01L2933/0058
摘要： A light emitting device comprises a first layer of an n-type semiconductor material, a second layer of a p-type semiconductor material, and an active layer between the first layer and the second layer. A light coupling layer is disposed adjacent to one of the first layer and the second layer. In some cases, the light coupling layer is formed by roughening a buffer layer of the light emitting device. The light emitting device includes an electrode in electrical communication with one of the first layer and the second layer through a portion of the light coupling layer.
摘要翻译：发光器件包括n型半导体材料的第一层，p型半导体材料的第二层和在第一层和第二层之间的有源层。光耦合层设置成与第一层和第二层中的一个相邻。在一些情况下，通过使发光器件的缓冲层粗糙化来形成光耦合层。发光器件包括通过光耦合层的一部分与第一层和第二层之一电连通的电极。

8. 发明授权

US08564010B2 Distributed current blocking structures for light emitting diodes 有权
公开(公告)号：US08564010B2
公开(公告)日：2013-10-22
申请号：US13198664
申请日：2011-08-04
申请人： Chih-Wei Chuang , Chao-Kun Lin
发明人： Chih-Wei Chuang , Chao-Kun Lin
IPC分类号： H01L33/14 , H01L33/38
CPC分类号： H01L33/38 , H01L33/14 , H01L33/145 , H01L33/22 , H01L33/387 , H01L33/405 , H01L33/42 , H01L2933/0016
摘要： An LED device includes a strip-shaped electrode, a strip-shaped current blocking structure and a plurality of distributed current blocking structures. The current blocking structures are formed of an insulating material such as silicon dioxide. The strip-shaped current blocking structure is located directly underneath the strip-shaped electrode. The plurality of current blocking structures may be disc shaped portions disposed in rows adjacent the strip-shaped current blocking structure. Distribution of the current blocking structures is such that current is prevented from concentrating in regions immediately adjacent the electrode, thereby facilitating uniform current flow into the active layer and facilitating uniform light generation in areas not underneath the electrode. In another aspect, current blocking structures are created by damaging regions of a p-GaN layer to form resistive regions. In yet another aspect, current blocking structures are created by etching away highly doped contact regions to form regions of resistive contact between conductive layers.

9. 发明申请

US20120267665A1 THIN-FILM LED WITH P AND N CONTACTS ELECTRICALLY ISOLATED FROM THE SUBSTRATE 有权
标题翻译：带有P和N触点的薄膜LED从基板电隔离
公开(公告)号：US20120267665A1
公开(公告)日：2012-10-25
申请号：US13532749
申请日：2012-06-25
申请人： Chao-Kun Lin
发明人： Chao-Kun Lin
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/005 , H01L33/0079 , H01L33/405 , H01L33/46 , H01L33/62 , H01L33/64 , H01L2224/48091 , H01L2224/73265 , H01L2924/01322 , H01L2933/0066 , H01L2933/0075 , H01L2933/0091 , H01L2924/00014 , H01L2924/00
摘要： A thin-film light emitting diode includes an insulating substrate, a reflective metal electrode on the insulating substrate forming a current spreading layer, and an epitaxial structure on the electrode.
摘要翻译：薄膜发光二极管包括绝缘基板，形成电流扩散层的绝缘基板上的反射金属电极和电极上的外延结构。

10. 发明申请

US20060182399A1 System and method for low loss waveguide bends 有权
标题翻译：低损耗波导弯曲的系统和方法
公开(公告)号：US20060182399A1
公开(公告)日：2006-08-17
申请号：US11060338
申请日：2005-02-17
申请人： Chao-Kun Lin , Kostadin Djordjev , Michael Tan
发明人： Chao-Kun Lin , Kostadin Djordjev , Michael Tan
IPC分类号： G02B6/10
CPC分类号： G02B6/122 , G02B2006/12104 , G02B2006/12119
摘要： In one embodiment, there is disclosed a waveguide medium using total internal reflection to create a relatively sharp (approximately 90°) bend for optical signals traversing the waveguide. A discontinuity of the medium (such as air) is used to create a turning mirror within the waveguide path. By curving the discontinuity, the entire input optical signal is focused into the output portion of the waveguide, thereby compensating for the diffraction loss of the optical signal at the bend. In one embodiment in order to facilitate proper alignment of the masks certain portions of the waveguide on a first mask are extended (widened) beyond their optimum physical size. This extended portion is then used to position an edge of a second mask, such that optical signal scatter caused by the extended portions of the waveguide are compensated for by adjusting the curvature.
摘要翻译：在一个实施例中，公开了使用全内反射以对穿过波导的光信号产生相对尖锐（大约90°）弯曲的波导介质。介质（如空气）的不连续性用于在波导路径内产生转向镜。通过弯曲不连续性，整个输入光信号被聚焦到波导的输出部分，从而补偿弯曲处的光信号的衍射损耗。在一个实施例中，为了促进掩模的正确对准，第一掩模上的波导的某些部分被延伸（加宽）超过其最佳物理尺寸。然后，该扩展部分用于定位第二掩模的边缘，使得由波导的延伸部分引起的光信号散射通过调整曲率来补偿。

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