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1. 发明申请

US20220231661A1 DECOUPLED TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS FOR HIGH POWER FILTERS 有权
公开(公告)号：US20220231661A1
公开(公告)日：2022-07-21
申请号：US17547125
申请日：2021-12-09
申请人： Resonant Inc.
发明人： Sean McHugh , Bryant Garcia , Ventsislav Yantchev , Greg Dyer
IPC分类号： H03H9/17 , H03H9/13 , H03H9/54
摘要： Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having front and back surfaces, the back surface attached to the substrate. A decoupling dielectric layer is on the front surface of the piezoelectric plate. An interdigital transducer (IDT) is formed over the decoupling dielectric layer such that interleaved fingers of the IDT are over a portion of the piezoelectric plate suspended across a cavity formed in the substrate. A thickness of the interleaved fingers is greater than or equal to 1.17 times a thickness of the piezoelectric plate and less than or equal to 1.7 times the thickness of the piezoelectric plate.

2. 发明授权

US11381221B2 Transversely-excited bulk acoustic resonator split ladder filter 有权
公开(公告)号：US11381221B2
公开(公告)日：2022-07-05
申请号：US17096841
申请日：2020-11-12
申请人： Resonant Inc.
发明人： Sean McHugh , Gregory L. Hey-Shipton , Garrett Williams
IPC分类号： H03H9/64 , H03H9/02 , H03H9/60 , H03H9/72
摘要： Filter devices. A first chip includes a first interdigital transducer (IDT) of a first acoustic resonator formed on a surface of a first piezoelectric wafer having a first thickness, interleaved fingers of the first IDT disposed on a portion of the first piezoelectric wafer spanning a first cavity in a first base. A second chip includes a second IDT of a second acoustic resonator formed on a surface of a second piezoelectric wafer having a second thickness less than the first thickness, interleaved fingers of the second IDT disposed on a portion of the second piezoelectric wafer spanning a second cavity in a second base. A circuit card coupled to the first chip and the second chip includes at least one conductor for making an electrical connection between the first IDT and the second IDT.

3. 发明授权

US11239816B1 Decoupled transversely-excited film bulk acoustic resonators 有权
公开(公告)号：US11239816B1
公开(公告)日：2022-02-01
申请号：US17408120
申请日：2021-08-20
申请人： Resonant Inc.
发明人： Sean McHugh
IPC分类号： H03H9/02 , H03H3/04 , H03H9/17 , H03H9/56 , H03H3/02
摘要： Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. A decoupling dielectric layer is on the front surface of the piezoelectric plate. An interdigital transducer (IDT) is formed over the decoupling dielectric layer such that interleaved fingers of the IDT are over a portion of the piezoelectric plate suspended across a cavity formed in the substrate.

4. 发明申请

US20210067140A1 TRANSVERSELY-EXCITED BULK ACOUSTIC RESONATOR SPLIT LADDER FILTER 有权
公开(公告)号：US20210067140A1
公开(公告)日：2021-03-04
申请号：US17096841
申请日：2020-11-12
申请人： Resonant Inc.
发明人： Sean McHugh , Gregory L. Hey-Shipton , Garrett Williams
IPC分类号： H03H9/64 , H03H9/60 , H03H9/72 , H03H9/02
摘要： Filter devices. A first chip includes a first interdigital transducer (IDT) of a first acoustic resonator formed on a surface of a first piezoelectric wafer having a first thickness, interleaved fingers of the first IDT disposed on a portion of the first piezoelectric wafer spanning a first cavity in a first base. A second chip includes a second IDT of a second acoustic resonator formed on a surface of a second piezoelectric wafer having a second thickness less than the first thickness, interleaved fingers of the second IDT disposed on a portion of the second piezoelectric wafer spanning a second cavity in a second base. A circuit card coupled to the first chip and the second chip includes at least one conductor for making an electrical connection between the first IDT and the second IDT.

5. 发明授权

US10917072B2 Split ladder acoustic wave filters 有权
公开(公告)号：US10917072B2
公开(公告)日：2021-02-09
申请号：US16727304
申请日：2019-12-26
申请人： Resonant Inc.
发明人： Sean McHugh , Gregory L. Hey-Shipton , Garrett Williams
IPC分类号： H03H9/64 , H03H9/72 , H03H9/60 , H03H9/02
摘要： Filter devices and methods of fabricating filter devices. A filter device includes a first chip and a second chip. The first chip has a first material stack and contains one or more series resonators of a ladder filter circuit. The second chip has a second material stack and contains one or more shunt resonators of the ladder filter circuit. The first material stack and the second material stack are different.

6. 发明申请

US20170140085A1 SIMULATING EFFECTS OF TEMPERATURE ON ACOUSTIC MICROWAVE FILTERS 审中-公开
公开(公告)号：US20170140085A1
公开(公告)日：2017-05-18
申请号：US15379850
申请日：2016-12-15
申请人： RESONANT INC.
发明人： Sean McHugh , Neal O. Fenzi
IPC分类号： G06F17/50 , H03H3/08
CPC分类号： G06F17/5068 , G06F3/162 , G06F17/5009 , G06F17/5036 , G06F17/504 , G06F17/5045 , G06F17/505 , G06F17/5063 , G06F17/5081 , G06F2217/16 , G06F2217/80 , H03H3/08 , H03H9/465 , H03H9/542 , H03H9/605 , H03H9/6483 , H03H2003/0071
摘要： A method of designing an acoustic microwave filter comprises generating a proposed filter circuit design having an acoustic resonant element with a defined admittance value, introducing a lumped capacitive element in parallel and a lumped inductive element in series with the resonant element, selecting a first capacitance value for the capacitive element and a first inductance value for the inductive element, thereby creating a first temperature modeled filter circuit design, simulating the first temperature modeled filter circuit design at a first operating temperature, thereby generating a first frequency response, selecting a second capacitance value for the capacitive element and a second inductance value for the inductive element, thereby creating a second temperature modeled filter circuit design, simulating the second temperature modeled filter circuit design at a second operating temperature, thereby generating a second frequency response, and comparing the first and second frequency responses to the frequency response requirements.

7. 发明授权

US09405875B1 Simulating effects of temperature on acoustic microwave filters 有权
标题翻译：模拟温度对声波微波滤波器的影响
公开(公告)号：US09405875B1
公开(公告)日：2016-08-02
申请号：US14941462
申请日：2015-11-13
申请人： RESONANT INC.
发明人： Sean McHugh , Neal O. Fenzi
IPC分类号： G06F17/50
CPC分类号： G06F17/5036 , G06F3/162 , G06F17/5009 , G06F17/504 , G06F17/5045 , G06F17/505 , G06F17/5063 , G06F2217/16 , G06F2217/80 , H03H3/08 , H03H9/465 , H03H9/542 , H03H9/605 , H03H9/6483 , H03H2003/0071
摘要： A method of designing an acoustic microwave filter comprises generating a proposed filter circuit design having an acoustic resonant element with a defined admittance value, introducing a lumped capacitive element in parallel and a lumped inductive element in series with the resonant element, selecting a first capacitance value for the capacitive element and a first inductance value for the inductive element, thereby creating a first temperature modeled filter circuit design, simulating the first temperature modeled filter circuit design at a first operating temperature, thereby generating a first frequency response, selecting a second capacitance value for the capacitive element and a second inductance value for the inductive element, thereby creating a second temperature modeled filter circuit design, simulating the second temperature modeled filter circuit design at a second operating temperature, thereby generating a second frequency response, and comparing the first and second frequency responses to the frequency response requirements.
摘要翻译：一种设计声波微波滤波器的方法包括产生一个所提出的滤波器电路设计，其具有具有限定导纳值的声谐振元件，并联集成电容元件和与谐振元件串联的集总电感元件，选择第一电容值对于电容元件和电感元件的第一电感值，从而产生第一温度建模的滤波器电路设计，在第一工作温度下模拟第一温度建模滤波器电路设计，从而产生第一频率响应，选择第二电容值对于电容元件和电感元件的第二电感值，从而产生第二温度建模滤波器电路设计，在第二工作温度下模拟第二温度建模滤波器电路设计，从而产生第二频率响应，并且比较第一和第第二个频率对频率响应要求的响应。

8. 发明申请

US20220360250A1 TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH CONCENTRIC INTERDIGITATED TRANSDUCER FINGERS 有权
公开(公告)号：US20220360250A1
公开(公告)日：2022-11-10
申请号：US17552254
申请日：2021-12-15
申请人： Resonant Inc.
发明人： Sean McHugh , Neal Fenzi , John Koulakis , Greg Dyer
IPC分类号： H03H9/56 , H03H9/13 , H03H9/17
摘要： Acoustic resonator devices, filters, and methods. An acoustic resonator includes a substrate and a piezoelectric plate, a portion of the piezoelectric plate being a diaphragm spanning a cavity in the substrate. A conductor pattern on a front surface of the piezoelectric plate includes concentric interleaved interdigital transducer (IDT) fingers connected alternately to first and second busbars. The IDT fingers are on the diaphragm.

9. 发明申请

US20220231659A1 DECOUPLED TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATORS 有权
公开(公告)号：US20220231659A1
公开(公告)日：2022-07-21
申请号：US17547113
申请日：2021-12-09
申请人： Resonant Inc.
发明人： Sean McHugh
IPC分类号： H03H9/02 , H03H3/04 , H03H9/17 , H03H9/56
摘要： Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate supported by the substrate. A portion of the piezoelectric plate suspended across a cavity in the substrate forms a diaphragm. A decoupling dielectric layer is on a front surface of the diaphragm. An interdigital transducer (IDT) has interleaved fingers on the decoupling dielectric layer over the diaphragm. The IDT and piezoelectric plate are configured such that a radio frequency signal applied to the IDT excites shear acoustic waves in the diaphragm.

10. 发明申请

US20220140801A1 TRANSVERSELY-EXCITED FILM BULK ACOUSTIC RESONATOR WITH SPIRAL INTERDIGITATED TRANSDUCER FINGERS 有权
公开(公告)号：US20220140801A1
公开(公告)日：2022-05-05
申请号：US17558112
申请日：2021-12-21
申请人： Resonant Inc.
发明人： Sean McHugh , Neal Fenzi
IPC分类号： H03H9/02 , H03H9/17 , H03H3/02 , H03H9/56
摘要： Acoustic resonator devices, filers, and methods. An acoustic resonator includes a substrate and a piezoelectric plate, a portion of the piezoelectric plate being a diaphragm spanning a cavity in the substrate. A conductor pattern on a front surface of the piezoelectric plate includes interleaved interdigital transducer (IDT) fingers connected alternately to first and second busbars. The interleaved IDT fingers are on the diaphragm, and the interleaved IDT fingers include at least a first pair of interleaved spiral IDT fingers.

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