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    • 1. 发明申请
    • NANOSTRUCTURE ELECTRODE FOR PSEUDOCAPACITIVE ENERGY STORAGE
    • 用于消除能量储存的纳米结构电极
    • US20120057273A1
    • 2012-03-08
    • US12876441
    • 2010-09-07
    • Richard A. HaightStephen M. Rossnagel
    • Richard A. HaightStephen M. Rossnagel
    • H01G9/00B05D5/12
    • H01G11/26H01G11/36H01G11/46Y02E60/13
    • A nanoporous templating substrate, which is an anodically oxidized alumina (AAO) substrate, is employed to form a pseudocapacitor having high stored energy density. A pseudocapacitive material is deposited conformally along the sidewalls of the AAO substrate by atomic layer deposition, chemical vapor deposition), and/or electrochemical deposition employing a nucleation layer. The thickness of the pseudocapacitive material on the walls can be precisely controlled in the deposition process. The AAO is etched to form an array of nanotubes of the PC material that are cylindrical and structurally robust with cavities therein. Because the AAO substrate that acts as scaffolding is removed, only the active PC material is left behind, thereby maximizing the energy per mass. In addition, nanotubes may be de-anchored from a substrate so that free-standing nanotubes having randomized orientations may be deposited on a conductive substrate to form an electrode of a pseudocapacitor.
    • 使用作为阳极氧化的氧化铝(AAO)底物的纳米多孔模板基板来形成具有高储能能量密度的假电容器。 通过原子层沉积,化学气相沉积)和/或使用成核层的电化学沉积,沿着AAO基板的侧壁共形沉积假电容材料。 在沉积过程中可以精确地控制壁上的假电容材料的厚度。 蚀刻AAO以形成PC材料的纳米管阵列,其为圆柱形且结构坚固且其中具有空腔。 由于去除了充当脚手架的AAO基板,所以只剩下活性PC材料,从而最大化每质量的能量。 此外,可以从衬底去除锚定纳米管,使得具有随机取向的自立式纳米管可以沉积在导电衬底上以形成假电容器的电极。
    • 3. 发明授权
    • Nanostructure electrode for pseudocapacitive energy storage
    • 用于假电容储能的纳米结构电极
    • US08599533B2
    • 2013-12-03
    • US12876441
    • 2010-09-07
    • Richard A. HaightStephen M. Rossnagel
    • Richard A. HaightStephen M. Rossnagel
    • H01G9/155H01G9/00
    • H01G11/26H01G11/36H01G11/46Y02E60/13
    • A nanoporous templating substrate, which is an anodically oxidized alumina (AAO) substrate, is employed to form a pseudocapacitor having high stored energy density. A pseudocapacitive material is deposited conformally along the sidewalls of the AAO substrate by atomic layer deposition, chemical vapor deposition), and/or electrochemical deposition employing a nucleation layer. The thickness of the pseudocapacitive material on the walls can be precisely controlled in the deposition process. The AAO is etched to form an array of nanotubes of the PC material that are cylindrical and structurally robust with cavities therein. Because the AAO substrate that acts as scaffolding is removed, only the active PC material is left behind, thereby maximizing the energy per mass. In addition, nanotubes may be de-anchored from a substrate so that free-standing nanotubes having randomized orientations may be deposited on a conductive substrate to form an electrode of a pseudocapacitor.
    • 使用作为阳极氧化的氧化铝(AAO)底物的纳米多孔模板基板来形成具有高储能能量密度的假电容器。 通过原子层沉积,化学气相沉积)和/或使用成核层的电化学沉积,沿着AAO基板的侧壁共形沉积假电容材料。 在沉积过程中可以精确地控制壁上的假电容材料的厚度。 蚀刻AAO以形成PC材料的纳米管阵列,其为圆柱形且结构坚固且其中具有空腔。 由于去除了充当脚手架的AAO基板,所以只剩下活性PC材料,从而最大化每质量的能量。 此外,可以从衬底去除锚定纳米管,使得具有随机取向的自立式纳米管可以沉积在导电衬底上以形成假电容器的电极。
    • 8. 发明授权
    • Method and apparatus for repair of reflective photomasks
    • 用于修复反光光掩模的方法和装置
    • US07170030B2
    • 2007-01-30
    • US10660477
    • 2003-09-12
    • Richard A. HaightPeter P. LongoAlfred Wagner
    • Richard A. HaightPeter P. LongoAlfred Wagner
    • B23K26/38
    • B82Y40/00B23K26/0624B23K26/361B23K26/40B23K2101/35B23K2103/50B82Y10/00G03F1/24G03F1/72
    • A method of selectively ablating an undesired material from a substrate includes providing a substrate with two regions; providing laser pulses; tuning a wavelength of the laser pulses to match a desired wavelength characteristic of a material and directing the tuned laser pulses onto the substrate; and controlling a pulse duration, wavelength, or both, of the laser pulses to ablate the undesired material without damaging the substrate or any adjacent material. In another embodiment, an apparatus for repairing a defect on a reflective photomask includes a femtosecond pulse width laser; a harmonic conversion cell; a filter for passing a selected EUV harmonic of the laser light; a lens arrangement configured to direct the selected EUV harmonic of the laser light onto the photomask; and a control unit connected to the laser to control an ablation of the defect on the reflective photomask.
    • 从衬底中选择性地烧蚀不需要的材料的方法包括提供具有两个区域的衬底; 提供激光脉冲; 调整激光脉冲的波长以匹配材料的期望波长特性并将调谐的激光脉冲引导到衬底上; 并且控制激光脉冲的脉冲持续时间,波长或两者,以消除不需要的材料,而不会损坏衬底或任何相邻的材料。 在另一个实施例中,用于修复反射光掩模上的缺陷的装置包括飞秒脉冲宽度激光器; 谐波转换电池; 用于通过激光的所选EUV谐波的滤波器; 透镜装置,被配置为将所选择的激光的EUV谐波引导到光掩模上; 以及连接到激光器以控制反射光掩模上的缺陷的消融的控制单元。
    • 9. 发明授权
    • System and method for modifying enclosed areas for ion beam and laser beam bias effects
    • 用于修改离子束封闭区域和激光束偏置效应的系统和方法
    • US06591154B2
    • 2003-07-08
    • US09737398
    • 2000-12-15
    • Richard A. HaightPeter P. LongoAlfred Wagner
    • Richard A. HaightPeter P. LongoAlfred Wagner
    • H04N121
    • H01L21/67288
    • A system and method for repairing defects in semiconductor wafers utilizing a repair tool including a device for applying energy to obliterate defects at locations on the wafer, the method being a graphical approach implementing a graphical user interface (GUI) comprising a pixel screen display and comprising the steps of: via the interface, identifying a wafer defect to repair and enclosing the defect within a polygonal repair outline drawn using a default line thickness; graphically adjusting the line thickness to modify the enclosed polygonal repair outline area; automatically detecting one or more areas within an interior region of the modified polygonal repair outline area; and, scanning the modified polygonal repair outline, and for each pixel location inside the one or more detected areas, applying energy to the wafer coordinated to the pixel location for repairing the defect, whereby the identification of said pixel location is accomplished using standard graphical tools with minimal operator intervention.
    • 一种利用修复工具修复半导体晶片缺陷的系统和方法,所述修复工具包括用于施加能量以消除晶片上位置处的缺陷的装置,所述方法是实现包括像素屏幕显示并且包括 以下步骤:通过接口,识别晶片缺陷以修复并将缺陷包围在使用默认线厚度绘制的多边形修复轮廓内; 以图形方式调整线条厚度以修改封闭的多边形修复轮廓区域; 自动检测修改的多边形修复轮廓区域的内部区域内的一个或多个区域; 以及扫描所述修改的多边形修复轮廓,以及对于所述一个或多个检测区域内的每个像素位置,向与所述像素位置协调的晶片施加能量以修复所述缺陷,由此使用标准图形工具来实现所述像素位置的识别 以最小的操作员干预。