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    • 1. 发明申请
    • VOLTAGE CONVERSION AND INTEGRATED CIRCUITS WITH STACKED VOLTAGE DOMAINS
    • 具有堆叠电压域的电压转换和集成电路
    • US20100259299A1
    • 2010-10-14
    • US12422391
    • 2009-04-13
    • Robert H. DennardBrian L. Ji
    • Robert H. DennardBrian L. Ji
    • H03K19/0175
    • H03K3/00H02M3/07H03K3/356139H03K19/01806H03K19/018521
    • An integrated circuit (IC) system includes a plurality of ICs configured in a stacked voltage domain arrangement such that a low side supply rail of at least one of ICs is common with a high side supply rail of at least another of the ICs; a reversible voltage converter coupled to power rails of each of the plurality of ICs, the reversible voltage converter configured for stabilizing individual voltage domains corresponding to each IC; and one or more data voltage level shifters configured to facilitate data communication between ICs operating in different voltage domains, wherein an input signal of a given logic state corresponding to one voltage in a first voltage domain is shifted to an output signal of the same logic state at another voltage in a second voltage domain.
    • 集成电路(IC)系统包括多个集成电路,其配置成堆叠的电压域布置,使得IC中的至少一个的低侧供电导轨与至少另一个IC的高侧供电导轨共同; 耦合到所述多个IC中的每一个的电源轨的可逆电压转换器,所述可逆电压转换器被配置用于稳定对应于每个IC的各个电压域; 以及一个或多个数据电压电平移位器,被配置为促进在不同电压域中操作的IC之间的数据通信,其中对应于第一电压域中的一个电压的给定逻辑状态的输入信号被转移到相同逻辑状态的输出信号 在第二电压域中的另一电压。
    • 2. 发明申请
    • SWITCHED CAPACITOR VOLTAGE CONVERTERS
    • 开关电容电压转换器
    • US20120262226A1
    • 2012-10-18
    • US13532986
    • 2012-06-26
    • Robert H. DennardBrian L. JiRobert K. Montoye
    • Robert H. DennardBrian L. JiRobert K. Montoye
    • G05F1/10
    • G11C5/145H02M3/07
    • An on-chip voltage conversion apparatus for integrated circuits includes a first capacitor; a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain; a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain; a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.
    • 集成电路的片上电压转换装置包括第一电容器; 第一NFET器件被配置为选择性地将第一电容器的第一电极耦合到第一电压域的低侧电压轨; 第一PFET器件,被配置为选择性地将第一电容器的第一电极耦合到第一电压域的高侧电压轨; 第二NFET器件,被配置为选择性地将第一电容器的第二电极耦合到第二电压域的低侧电压轨,其中第二电压域的低侧电压轨对应于第一电压域的高侧电压轨 ; 以及第二PFET器件,被配置为选择性地将第一电容器的第二电极耦合到第二电压域的高侧电压轨。
    • 3. 发明申请
    • LOW VOLTAGE SIGNALING
    • 低电压信号
    • US20110298440A1
    • 2011-12-08
    • US12794995
    • 2010-06-07
    • Leland ChangRobert H. DennardBrian L. JiWing K. LukRobert K. Montoye
    • Leland ChangRobert H. DennardBrian L. JiWing K. LukRobert K. Montoye
    • G05F5/00
    • H02M3/07H02M2003/072
    • A low voltage signaling system for integrated circuits includes a first voltage domain operating at a nominal integrated circuit (IC) power supply voltage (Vdd) swing level at a signal transmitting end of a first chip, a second voltage domain having one or more transmission interconnect lines operating at a reduced voltage swing level with respect to the first voltage domain, and a third voltage domain at a signal receiving end of a second chip, the third voltage domain operating at the Vdd swing level; wherein an input signal originating from the first voltage domain is down converted to operate at the reduced voltage swing level for transmission over the second voltage domain, and wherein the third voltage domain senses the input signal transmitted over the second voltage domain and generates an output signal operating back up at the Vdd swing level.
    • 用于集成电路的低电压信号系统包括在第一芯片的信号发射端处以标称集成电路(IC)电源电压(Vdd)摆幅电平操作的第一电压域,具有一个或多个传输互连的第二电压域 以相对于第一电压域的降低的电压摆动电平工作的线路,以及在第二芯片的信号接收端的第三电压域,以Vdd摆动电平工作的第三电压域; 其中源自所述第一电压域的输入信号被降频转换以在所述降低的电压摆幅电平下工作以在所述第二电压域上传输,并且其中所述第三电压域检测在所述第二电压域上传输的输入信号,并产生输出信号 以Vdd摆动水平运行。
    • 4. 发明授权
    • Low voltage signaling
    • 低电压信号
    • US08629705B2
    • 2014-01-14
    • US12794995
    • 2010-06-07
    • Leland ChangRobert H. DennardBrian L. JiWing K. LukRobert K. Montoye
    • Leland ChangRobert H. DennardBrian L. JiWing K. LukRobert K. Montoye
    • H03L5/00
    • H02M3/07H02M2003/072
    • A low voltage signaling system for integrated circuits includes a first voltage domain operating at a nominal integrated circuit (IC) power supply voltage (Vdd) swing level at a signal transmitting end of a first chip, a second voltage domain having one or more transmission interconnect lines operating at a reduced voltage swing level with respect to the first voltage domain, and a third voltage domain at a signal receiving end of a second chip, the third voltage domain operating at the Vdd swing level; wherein an input signal originating from the first voltage domain is down converted to operate at the reduced voltage swing level for transmission over the second voltage domain, and wherein the third voltage domain senses the input signal transmitted over the second voltage domain and generates an output signal operating back up at the Vdd swing level.
    • 用于集成电路的低电压信号系统包括在第一芯片的信号发射端处以标称集成电路(IC)电源电压(Vdd)摆幅电平操作的第一电压域,具有一个或多个传输互连的第二电压域 以相对于第一电压域的降低的电压摆动电平工作的线路,以及在第二芯片的信号接收端的第三电压域,以Vdd摆动电平工作的第三电压域; 其中源自所述第一电压域的输入信号被降频转换以在所述降低的电压摆幅电平下工作以在所述第二电压域上传输,并且其中所述第三电压域检测在所述第二电压域上传输的输入信号,并产生输出信号 以Vdd摆动水平运行。
    • 5. 发明授权
    • Switched capacitor voltage converters
    • 开关电容电压转换器
    • US08248152B2
    • 2012-08-21
    • US12392476
    • 2009-02-25
    • Robert H. DennardBrian L. JiRobert K. Montoye
    • Robert H. DennardBrian L. JiRobert K. Montoye
    • G05F1/10G05F3/02
    • G11C5/145H02M3/07
    • An on-chip voltage conversion apparatus for integrated circuits includes a first capacitor; a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain; a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain; a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.
    • 用于集成电路的片上电压转换装置包括第一电容器; 第一NFET器件被配置为选择性地将第一电容器的第一电极耦合到第一电压域的低侧电压轨; 第一PFET器件,被配置为选择性地将第一电容器的第一电极耦合到第一电压域的高侧电压轨; 第二NFET器件,被配置为选择性地将第一电容器的第二电极耦合到第二电压域的低侧电压轨,其中第二电压域的低侧电压轨对应于第一电压域的高侧电压轨 ; 以及第二PFET器件,被配置为选择性地将第一电容器的第二电极耦合到第二电压域的高侧电压轨。
    • 6. 发明申请
    • VOLTAGE CONVERSION AND INTEGRATED CIRCUITS WITH STACKED VOLTAGE DOMAINS
    • 具有堆叠电压域的电压转换和集成电路
    • US20120169319A1
    • 2012-07-05
    • US13420080
    • 2012-03-14
    • Robert H. DennardBrian L. Ji
    • Robert H. DennardBrian L. Ji
    • G05F3/02
    • H03K3/00H02M3/07H03K3/356139H03K19/01806H03K19/018521
    • A reversible, switched capacitor voltage conversion apparatus includes a plurality of individual unit cells coupled to one another in stages, with each unit cell comprising multiple sets of inverter devices arranged in a stacked configuration, such that each set of inverter devices operates in separate voltage domains wherein outputs of inverter devices in adjacent voltage domains are capacitively coupled to one another such that a first terminal of a capacitor is coupled to an output of a first inverter device in a first voltage domain, and a second terminal of the capacitor is coupled to an output of a second inverter in a second voltage domain; and wherein, for both the first and second voltage domains, outputs of at least one of the plurality of individual unit cells serve as corresponding inputs for at least another one of the plurality of individual unit cells.
    • 可逆开关电容器电压转换装置包括分阶段地彼此耦合的多个单独单元电池,每个单元电池包括以堆叠配置布置的多组逆变器装置,使得每组逆变器装置在单独的电压域 其中相邻电压域中的逆变器装置的输出电容耦合到彼此,使得电容器的第一端子耦合到第一电压域中的第一反相器装置的输出,并且所述电容器的第二端子耦合到 在第二电压域中输出第二反相器; 并且其中,对于所述第一和第二电压域两者,所述多个单独单元中的至少一个单元的输出用作所述多个单独单元中的至少另一个的相应输入。
    • 7. 发明授权
    • Voltage conversion and integrated circuits with stacked voltage domains
    • 具有堆叠电压域的电压转换和集成电路
    • US08174288B2
    • 2012-05-08
    • US12422391
    • 2009-04-13
    • Robert H. DennardBrian L. Ji
    • Robert H. DennardBrian L. Ji
    • H03K19/0175
    • H03K3/00H02M3/07H03K3/356139H03K19/01806H03K19/018521
    • An integrated circuit (IC) system includes a plurality of ICs configured in a stacked voltage domain arrangement such that a low side supply rail of at least one of ICs is common with a high side supply rail of at least another of the ICs; a reversible voltage converter coupled to power rails of each of the plurality of ICs, the reversible voltage converter configured for stabilizing individual voltage domains corresponding to each IC; and one or more data voltage level shifters configured to facilitate data communication between ICs operating in different voltage domains, wherein an input signal of a given logic state corresponding to one voltage in a first voltage domain is shifted to an output signal of the same logic state at another voltage in a second voltage domain.
    • 集成电路(IC)系统包括多个集成电路,其配置成堆叠的电压域布置,使得IC中的至少一个的低侧供电导轨与至少另一个IC的高侧供电导轨共同; 耦合到所述多个IC中的每一个的电源轨的可逆电压转换器,所述可逆电压转换器被配置用于稳定对应于每个IC的各个电压域; 以及一个或多个数据电压电平移位器,被配置为促进在不同电压域中操作的IC之间的数据通信,其中对应于第一电压域中的一个电压的给定逻辑状态的输入信号被转移到相同逻辑状态的输出信号 在第二电压域中的另一电压。
    • 8. 发明授权
    • Voltage conversion and integrated circuits with stacked voltage domains
    • 具有堆叠电压域的电压转换和集成电路
    • US08754672B2
    • 2014-06-17
    • US13420080
    • 2012-03-14
    • Robert H. DennardBrian L. Ji
    • Robert H. DennardBrian L. Ji
    • H03K19/0175
    • H03K3/00H02M3/07H03K3/356139H03K19/01806H03K19/018521
    • A reversible, switched capacitor voltage conversion apparatus includes a plurality of individual unit cells coupled to one another in stages, with each unit cell comprising multiple sets of inverter devices arranged in a stacked configuration, such that each set of inverter devices operates in separate voltage domains wherein outputs of inverter devices in adjacent voltage domains are capacitively coupled to one another such that a first terminal of a capacitor is coupled to an output of a first inverter device in a first voltage domain, and a second terminal of the capacitor is coupled to an output of a second inverter in a second voltage domain; and wherein, for both the first and second voltage domains, outputs of at least one of the plurality of individual unit cells serve as corresponding inputs for at least another one of the plurality of individual unit cells.
    • 可逆开关电容器电压转换装置包括分阶段地彼此耦合的多个单独单元电池,每个单元电池包括以堆叠配置布置的多组逆变器装置,使得每组逆变器装置在单独的电压域 其中相邻电压域中的逆变器装置的输出电容耦合到彼此,使得电容器的第一端子耦合到第一电压域中的第一反相器装置的输出,并且所述电容器的第二端子耦合到 在第二电压域中输出第二反相器; 并且其中,对于所述第一和第二电压域两者,所述多个单独单元中的至少一个单元的输出用作所述多个单独单元中的至少另一个的相应输入。
    • 9. 发明授权
    • Switched capacitor voltage converters
    • 开关电容电压转换器
    • US08395438B2
    • 2013-03-12
    • US13532986
    • 2012-06-26
    • Robert H. DennardBrian L. JiRobert K. Montoye
    • Robert H. DennardBrian L. JiRobert K. Montoye
    • G05F1/10G05F3/02
    • G11C5/145H02M3/07
    • An on-chip voltage conversion apparatus for integrated circuits includes a first capacitor; a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain; a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain; a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.
    • 集成电路的片上电压转换装置包括第一电容器; 第一NFET器件被配置为选择性地将第一电容器的第一电极耦合到第一电压域的低侧电压轨; 第一PFET器件,被配置为选择性地将第一电容器的第一电极耦合到第一电压域的高侧电压轨; 第二NFET器件,被配置为选择性地将第一电容器的第二电极耦合到第二电压域的低侧电压轨,其中第二电压域的低侧电压轨对应于第一电压域的高侧电压轨 ; 以及第二PFET器件,被配置为选择性地将第一电容器的第二电极耦合到第二电压域的高侧电压轨。
    • 10. 发明申请
    • SWITCHED CAPACITOR VOLTAGE CONVERTERS
    • 开关电容电压转换器
    • US20100214014A1
    • 2010-08-26
    • US12392476
    • 2009-02-25
    • Robert H. DennardBrian L. JiRobert K. Montoye
    • Robert H. DennardBrian L. JiRobert K. Montoye
    • G05F3/02
    • G11C5/145H02M3/07
    • An on-chip voltage conversion apparatus for integrated circuits includes a first capacitor; a first NFET device configured to selectively couple a first electrode of the first capacitor to a low side voltage rail of a first voltage domain; a first PFET device configured to selectively couple the first electrode of the first capacitor to a high side voltage rail of the first voltage domain; a second NFET device configured to selectively couple a second electrode of the first capacitor to a low side voltage rail of a second voltage domain, wherein the low side voltage rail of the second voltage domain corresponds to the high side voltage rail of the first voltage domain; and a second PFET device configured to selectively couple the second electrode of the first capacitor to a high side voltage rail of the second voltage domain.
    • 集成电路的片上电压转换装置包括第一电容器; 第一NFET器件被配置为选择性地将第一电容器的第一电极耦合到第一电压域的低侧电压轨; 第一PFET器件,被配置为选择性地将第一电容器的第一电极耦合到第一电压域的高侧电压轨; 第二NFET器件,被配置为选择性地将第一电容器的第二电极耦合到第二电压域的低侧电压轨,其中第二电压域的低侧电压轨对应于第一电压域的高侧电压轨 ; 以及第二PFET器件,被配置为选择性地将第一电容器的第二电极耦合到第二电压域的高侧电压轨。