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1. 发明授权

US10811193B2 Capacitor component 有权
公开(公告)号：US10811193B2
公开(公告)日：2020-10-20
申请号：US15961445
申请日：2018-04-24
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jeong Hoon Ryou , Hyun Ho Shin , Byeong Cheol Moon , Chang Soo Jang , Tae Joon Park , Yun Hee Kim , Kyo Yeol Lee , Seung Mo Lim
IPC分类号： H01G4/30 , H01G4/008 , H01G4/33 , H01G4/012 , H01L49/02
摘要： A capacitor component includes a porous body, a first electrode layer covering surfaces of pores of the porous body, a dielectric layer covering the first electrode layer, and a second electrode layer filling the pores of the porous body and covering the dielectric layer.

2. 发明授权

US10755855B2 Capacitor and method of manufacturing the same 有权
公开(公告)号：US10755855B2
公开(公告)日：2020-08-25
申请号：US16107803
申请日：2018-08-21
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Chang Soo Jang , Yun Hee Kim , Woong Do Jung , Jeong Hoon Ryou
IPC分类号： H01G4/008 , H01G4/012 , H01G4/08
摘要： Provided is a capacitor including a substrate including first and second trenches spaced apart from each other, a first electrode disposed in the first trench and one surface of the substrate, a second electrode disposed in the second trench and on the one surface of the substrate and spaced apart from the first electrode, first and second pad electrodes arranged on the first and second electrodes, respectively, and a passivation layer disposed on the first and second pad electrodes and having openings partially exposing the first and second pad electrodes, respectively.

3. 发明授权

US10446324B2 Thin film capacitor 有权
公开(公告)号：US10446324B2
公开(公告)日：2019-10-15
申请号：US15651617
申请日：2017-07-17
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Kyo Yeol Lee , Hai Joon Lee , Seung Mo Lim , Ho Phil Jung , In Young Kang , Yun Hee Kim , Yun Sung Kang
IPC分类号： H01G4/33 , H01G4/008 , H01G4/12 , H01G4/30
摘要： A thin film capacitor includes a body including alternately stacked first and second electrode layers and dielectric layers on a substrate, the second electrode layer including a second lower electrode layer and a second upper electrode layer formed on the second lower electrode layer, the second lower electrode layer including a material having a higher band gap energy than the first electrode layer and the second upper electrode layer.

4. 发明授权

US11322302B2 Multilayer electronic component 有权
公开(公告)号：US11322302B2
公开(公告)日：2022-05-03
申请号：US16867039
申请日：2020-05-05
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Suji Kang , Yuhong Oh , Byung Kun Kim , Yun Hee Kim , Min Jung Cho
IPC分类号： H01G4/008 , H01G4/248 , H01G4/232 , H01G4/30
摘要： A multilayer electronic component includes a body including a dielectric layer and internal electrodes alternately stacked with the dielectric layer interposed therebetween, and an external electrode disposed on the body and connected to the internal electrodes . An end portion of at least one of the internal electrodes in a longitudinal direction of the body is thicker than a central portion of the internal electrode, and a ratio t2/t1 of a thickness t2 of the end portion to a thickness t1 of the central portion satisfies 1.1≤t2/t1≤1.5.

5. 发明授权

US10062516B2 Thin-film ceramic capacitor 有权
公开(公告)号：US10062516B2
公开(公告)日：2018-08-28
申请号：US15634327
申请日：2017-06-27
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Yun Sung Kang , Hai Joon Lee , Tae Joon Park , Dong Joon Oh , Yun Hee Kim , Kyo Yeol Lee , Seung Mo Lim , In Young Kang
IPC分类号： H01G4/33 , H01G4/12 , H01G4/005
CPC分类号： H01G4/33 , H01G4/005 , H01G4/1227 , H01G4/228 , H01G4/236
摘要： A thin-film ceramic capacitor includes: a body in which a plurality of dielectric layers and first and second electrode layers are alternately disposed on a substrate; and first and second electrode pads disposed on an external surface of the body. The dielectric layer contains a mixed phase of a perovskite phase having ferroelectric properties and a pyrochlore phase having paraelectric properties, the pyrochlore phase being disposed on interfaces between the dielectric layers and the first and second electrode layers in lower portions of the dielectric layers.

6. 发明申请

US20140111790A1 PRETREATMENT METHOD AND APPARATUS 审中-公开
标题翻译：预处理方法和装置
公开(公告)号：US20140111790A1
公开(公告)日：2014-04-24
申请号：US13848797
申请日：2013-03-22
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Eun Jin Choi , Sang Phil Lee , Se Kyung Lee , Seon Young Ahn , Yun Hee Kim , Suk Jin Ham
IPC分类号： G01N1/38
CPC分类号： G01N1/38 , G01N2001/383
摘要： There is provided a method for performing a pretreatment on an unknown sample including: preparing a plurality of different types of first solutions; adding an unknown sample to the plurality of first solutions and determining whether or not the unknown sample is dissolved; selecting one among the plurality of first solutions in which the unknown sample is dissolved; preparing a plurality of second solution by differentiating concentrations of the selected solution; adding an unknown sample to the second solution and determining whether or not the unknown sample is dissolved; selecting a solution having the lowest concentration in which the unknown sample can be dissolved from among the second solutions; and dissolving the unknown sample by using the solution having the lowest concentration.
摘要翻译：提供了对未知样品进行预处理的方法，包括：制备多种不同类型的第一溶液; 将未知样品添加到所述多个第一溶液中并确定未知样品是否溶解; 选择未知样品溶解的多个第一溶液之一; 通过分选所选溶液的浓度来制备多个第二溶液; 将未知样品添加到第二溶液中并确定未知样品是否溶解; 从第二溶液中选择具有可溶解未知样品的最低浓度的溶液; 并通过使用浓度最低的溶液溶解未知样品。

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