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1. 发明授权

US09209212B2 Image sensor including source follower 有权
标题翻译：图像传感器包括源跟随器
公开(公告)号：US09209212B2
公开(公告)日：2015-12-08
申请号：US14459385
申请日：2014-08-14
申请人： Samsung Electronics Co., Ltd.
发明人： Hirosige Goto
IPC分类号： H01L27/146 , H01L27/148 , H04N5/369
CPC分类号： H01L27/14616 , H01L27/14612 , H01L27/1463 , H04N5/3698
摘要： Provided is an image sensor including a source follower transistor. The source follower transistor may include a channel structure that is provided between a source and a drain, and includes a first semiconductor layer, a second semiconductor layer, and a blocking structure. The first semiconductor layer may be spaced apart from a gate insulating layer of the source follower transistor by a first depth or more. Carriers may move from the source of the source follower transistor to the drain thereof through the first semiconductor layer.
摘要翻译：提供了一种包括源极跟随器晶体管的图像传感器。源极跟随器晶体管可以包括设置在源极和漏极之间的沟道结构，并且包括第一半导体层，第二半导体层和阻挡结构。第一半导体层可以与源极跟随器晶体管的栅极绝缘层间隔第一深度或更多。载体可以从源极跟随器晶体管的源极移动到其漏极穿过第一半导体层。

2. 发明授权

US09224780B2 Complementary metal-oxide-semiconductor (CMOS) image sensor including a junction field effect transistor 有权
标题翻译：具有结型场效应晶体管的互补金属氧化物半导体（CMOS）图像传感器
公开(公告)号：US09224780B2
公开(公告)日：2015-12-29
申请号：US13833302
申请日：2013-03-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Hirosige Goto
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14612 , H01L27/14641
摘要： An image sensor includes a sensing node to sense photo charges output from a photodiode. The sensing node includes a first dopant region of a first conductivity type and a second dopant region of a second conductivity type. The second dopant region surrounds the first dopant region. A third dopant region of the first conductivity type is adjacent to the second dopant region and is disposed around the sensing node. The first, second, and third dopant regions operate as a source, a gate, and a drain of a junction field effect transistor, respectively.
摘要翻译：图像传感器包括用于感测从光电二极管输出的光电荷的感测节点。感测节点包括第一导电类型的第一掺杂区和第二导电类型的第二掺杂区。第二掺杂剂区域围绕第一掺杂剂区域。第一导电类型的第三掺杂剂区域与第二掺杂剂区域相邻并且设置在感测节点周围。第一，第二和第三掺杂剂区域分别作为结型场效应晶体管的源极，栅极和漏极起作用。

3. 发明申请

US20170294487A1 IMAGE SENSOR, METHOD FOR MANUFACTURING THE SAME, AND IMAGE PROCESSING DEVICE HAVING THE IMAGE SENSOR 审中-公开
公开(公告)号：US20170294487A1
公开(公告)日：2017-10-12
申请号：US15630571
申请日：2017-06-22
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： MYUNG WON LEE , Sang Chul Sul , Hirosige Goto , Sae Young Kim , Gwi Deok Ryan Lee , Masaru Ishii , Kyo Jin Choo
IPC分类号： H01L27/30 , H01L51/44
CPC分类号： H01L27/307 , H01L51/442 , H04N5/23229 , H04N5/3765 , H04N5/378 , H04N9/045
摘要： An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

4. 发明授权

US09293489B2 CMOS image sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US09293489B2
公开(公告)日：2016-03-22
申请号：US14315730
申请日：2014-06-26
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Myungwon Lee , Sangchul Sul , Hirosige Goto , Sae-Young Kim , Kang-Su Lee , Gwideokryan Lee , Masaru Ishii
IPC分类号： H01L27/146
CPC分类号： H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/1464
摘要： An image sensor includes a semiconductor substrate, a storage node region in the semiconductor substrate, an insulating portion on the semiconductor substrate, a via contact extending through the insulating portion, a photo-electric converter in the semiconductor substrate and spaced apart from the storage node region, an organic photo-electric layer on the insulating portion, and a buffer interposed between and electrically connecting the via contact and the storage node region.
摘要翻译：图像传感器包括半导体衬底，半导体衬底中的存储节点区域，半导体衬底上的绝缘部分，延伸穿过绝缘部分的通孔接触，半导体衬底中的光电转换器，并与存储节点间隔开区域，绝缘部分上的有机光电层，以及插入在电触点和存储节点区域之间并将其电连接的缓冲器。

5. 发明授权

US09287327B2 Image sensor, method for manufacturing the same, and image processing device having the image sensor 有权
标题翻译：图像传感器，其制造方法以及具有图像传感器的图像处理装置
公开(公告)号：US09287327B2
公开(公告)日：2016-03-15
申请号：US14310305
申请日：2014-06-20
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Myung Won Lee , Sang Chul Sul , Hirosige Goto , Sae Young Kim , Gwi Deok Ryan Lee , Masaru Ishii , Kyo Jin Choo
IPC分类号： H04N5/225 , H01L27/30 , H04N9/04
CPC分类号： H01L27/307 , H01L51/442 , H04N5/23229 , H04N5/3765 , H04N5/378 , H04N9/045
摘要： An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.
摘要翻译：一种图像传感器，包括：第一层，其具有形成在半导体衬底中的多组光电二极管，每个组表示2×2的光电二极管阵列，其中2个第一像素被配置为检测第一波长的光和2秒的像素，检测第二波长的光，每个第一像素定位成与第二像素相邻; 以及与所述第一层重叠的第二层，所述第二层是有机的，具有被配置为检测第三波长的光的多个有机光电二极管，每个有机光电二极管定位成部分地重叠第一层的2个第一光电二极管和2个第二光电二极管。

6. 发明授权

US09148599B2 Image sensor, configured to regulate a quantity of light absorbed thereby, electronic device including the same, and image sensing method 有权
标题翻译：图像传感器，被配置为调节由此吸收的光量，包括其的电子设备和图像感测方法
公开(公告)号：US09148599B2
公开(公告)日：2015-09-29
申请号：US14579857
申请日：2014-12-22
申请人： Samsung Electronics Co., Ltd.
发明人： Sang Chul Sul , Hirosige Goto , Kyung Ho Lee
IPC分类号： H04N5/3745 , H04N5/378
CPC分类号： H04N5/3745 , H01L27/307 , H04N5/3591 , H04N5/378
摘要： An image sensor and an image sensing method are provided. The image sensor includes a semiconductor substrate; a photoelectric converter comprising a bias unit, which comprises a first electrode and a second electrode, and an organic photoelectric conversion layer, which selectively absorbs light and converts the light into electrons; a via contacting the second electrode to connect the photoelectric converter with the semiconductor substrate; a storage node configured to store electrons; a read-out unit to converts charge transferred from the storage node into an image signal; a pixel array comprising a plurality of pixels, each of which comprises an intermediate insulating layer; and an output circuit configured to read out the image signal from the pixel array. The quantity of light received by the organic photoelectric conversion layer is adjusted by a bias change of the bias unit.
摘要翻译：提供了图像传感器和图像感测方法。图像传感器包括半导体衬底; 光电转换器包括偏置单元，其包括第一电极和第二电极，以及有机光电转换层，其选择性地吸收光并将光转换成电子; 与所述第二电极接触以将所述光电转换器与所述半导体衬底连接的通孔; 被配置为存储电子的存储节点; 读出单元，用于将从存储节点传送的电荷转换为图像信号; 包括多个像素的像素阵列，每个像素包括中间绝缘层; 以及输出电路，被配置为从像素阵列读出图像信号。由有机光电转换层接收的光量由偏置单元的偏置变化来调节。

7. 发明授权

US09954034B2 Image sensor, method for manufacturing the same, and image processing device having the image sensor 有权
公开(公告)号：US09954034B2
公开(公告)日：2018-04-24
申请号：US15630571
申请日：2017-06-22
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Myung Won Lee , Sang Chul Sul , Hirosige Goto , Sae Young Kim , Gwi Deok Ryan Lee , Masaru Ishii , Kyo Jin Choo
IPC分类号： H04N5/232 , H01L27/30 , H01L51/44 , H04N9/04 , H04N5/376 , H04N5/378
CPC分类号： H01L27/307 , H01L51/442 , H04N5/23229 , H04N5/3765 , H04N5/378 , H04N9/045
摘要： An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

8. 发明授权

US09905615B2 Image sensor, method for manufacturing the same, and image processing device having the image sensor 有权
公开(公告)号：US09905615B2
公开(公告)日：2018-02-27
申请号：US15233383
申请日：2016-08-10
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Myung Won Lee , Sang Chul Sul , Hirosige Goto , Sae Young Kim , Gwi Deok Ryan Lee , Masaru Ishii , Kyo Jin Choo
IPC分类号： H04N5/232 , H01L27/30 , H01L51/44 , H04N9/04 , H04N5/376 , H04N5/378
CPC分类号： H01L27/307 , H01L51/442 , H04N5/23229 , H04N5/3765 , H04N5/378 , H04N9/045
摘要： An image sensor comprising: a first layer having a plurality of groups of photodiodes formed in a semiconductor substrate, each group representing a 2×2 array of photodiodes, with 2 first pixels configured to detect light of a first wavelength and 2 second pixels configured to detect light of a second wavelength, each first pixel positioned adjacent to the second pixels; and a second layer overlapping the first layer, the second layer is organic, having a plurality of organic photodiodes configured to detect light of a third wavelength, each organic photodiode positioned to partially overlap 2 first photodiodes and 2 second photodiodes of the first layer.

9. 发明授权

US09343492B2 CMOS image sensor based on thin-film on asic and operating method thereof 有权
标题翻译：基于薄膜的CMOS图像传感器及其操作方法
公开(公告)号：US09343492B2
公开(公告)日：2016-05-17
申请号：US14584273
申请日：2014-12-29
申请人： Samsung Electronics Co., Ltd.
发明人： Young-Gu Jin , Dong-Ki Min , Hirosige Goto , Tae-Chan Kim
IPC分类号： H01L31/0232 , H01L27/146 , H04N9/04 , H04N13/02 , H04N5/3745
CPC分类号： H01L27/14627 , H01L27/14609 , H01L27/14621 , H01L27/14629 , H01L27/14643 , H01L27/14665 , H04N5/3696 , H04N5/3745 , H04N9/045 , H04N13/207
摘要： Provided are a complementary metal-oxide semiconductor (CMOS) image sensor based on a thin-film-on-application specific integrated circuit (TFA), and a method of operating the same. The CMOS image sensor may include at least one floating diffusion region formed in a semiconductor substrate, and a thin film type light sensor disposed to correspond to a plurality of pixels. The CMOS image sensor may also include at least one via electrically connected between the light sensor and the at least one floating diffusion region. The CMOS image sensor may also include a first micro lens disposed to correspond to at least two pixels of the plurality of pixels.
摘要翻译：提供了一种基于薄膜专用集成电路（TFA）的互补金属氧化物半导体（CMOS）图像传感器及其操作方法。 CMOS图像传感器可以包括形成在半导体衬底中的至少一个浮动扩散区域和与多个像素相对应地设置的薄膜型光传感器。 CMOS图像传感器还可以包括电连接在光传感器和至少一个浮动扩散区域之间的至少一个通孔。 CMOS图像传感器还可以包括设置成对应于多个像素中的至少两个像素的第一微透镜。

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