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1. 发明授权

US11616934B2 Image sensor 有权
公开(公告)号：US11616934B2
公开(公告)日：2023-03-28
申请号：US17509696
申请日：2021-10-25
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Junghyung Pyo , Kyungho Lee
IPC分类号： H04N5/374 , H04N5/351 , H04N9/04 , H04N5/369 , G06T3/40 , H04N5/3745
摘要： An image sensor includes a pixel array with pixels arranged in a first direction and a second direction, intersecting the first direction. Each of the pixels includes a photodiode, a pixel circuit below the photodiode, and a color filter on or above the photodiode. A logic circuit acquires a pixel signal from the pixels through a plurality of column lines extending in the second direction. The pixels include color pixels and white pixels, the number of white pixels being greater than the number of color pixels. The pixel circuit includes a floating diffusion in which charges of the photodiode are accumulated and transistors outputting a voltage corresponding to amounts of charges in the floating diffusion. Each of the color pixels shares the floating diffusion with at least one neighboring white pixel, adjacent thereto in the second direction, among the white pixels.

2. 发明授权

US10886318B2 Image sensor 有权
公开(公告)号：US10886318B2
公开(公告)日：2021-01-05
申请号：US16699150
申请日：2019-11-29
申请人： Samsung Electronics Co., Ltd.
发明人： Junghyung Pyo , Kyungho Lee
IPC分类号： H01L27/146
摘要： An image sensor is disclosed. The image sensor may include a semiconductor substrate including a first pixel group region and a second pixel group region, the first pixel group region including first pixel regions to sense a first light, the second pixel group region including second pixel regions to sense a second light, each of the first and second pixel regions arranged in n columns and m rows, a pixel isolation structure disposed in the semiconductor substrate to separate the first and second pixel regions from each other, first and second photoelectric conversion regions disposed in each of the first and second pixel regions of the semiconductor substrate, and a first separation structure disposed in each of the first pixel regions and in the semiconductor substrate between the first and second photoelectric conversion regions. The first separation structure may be spaced apart from the pixel isolation structure.

3. 发明申请

US20200279885A1 IMAGE SENSORS WITH LIGHT CHANNELING REFLECTIVE LAYERS THEREIN 审中-公开
公开(公告)号：US20200279885A1
公开(公告)日：2020-09-03
申请号：US16878208
申请日：2020-05-19
申请人： Samsung Electronics Co., Ltd.
发明人： Kyungho Lee , Hyuk An , Hyuk Soon Choi
IPC分类号： H01L27/146
摘要： An image sensor includes a two-dimensional array of image sensor pixels, which are formed in a semiconductor layer. Each image sensor pixel is formed in a substrate having a corresponding semiconductor region therein. Each semiconductor region contains at least first and second photoelectric conversion elements, which are disposed at side-by-side locations therein. An electrically insulating isolation region is also provided, which extends at least partially through the semiconductor region and at least partially between the first and second photoelectric conversion elements, which may be configured respectively as first and second semiconductor regions of first conductivity type (e.g., N-type). At least one optically reflective region is also provided, which extends at least partially through the semiconductor region and surrounds at least a portion of at least one of the first and second photoelectric conversion elements. A semiconductor floating diffusion (FD) region (e.g., N-type region) is provided within the semiconductor region.

4. 发明授权

US10658411B2 Image sensors including shifted isolation structures 有权
公开(公告)号：US10658411B2
公开(公告)日：2020-05-19
申请号：US16275405
申请日：2019-02-14
申请人： Samsung Electronics Co., Ltd.
发明人： Junghyung Pyo , BumSuk Kim , Kyungho Lee
IPC分类号： H01L27/146
摘要： Image sensors are provided. An image sensor includes a semiconductor substrate including a pixel region. The image sensor includes first and second photoelectric conversion elements in the pixel region. The image sensor includes an isolation region between the first and second photoelectric conversion elements. The isolation region is off-center with respect to the pixel region.

5. 发明申请

US20170104020A1 IMAGE SENSORS USING DIFFERENT PHOTOCONVERSION REGION ISOLATION STRUCTURES FOR DIFFERENT TYPES OF PIXEL REGIONS 有权
公开(公告)号：US20170104020A1
公开(公告)日：2017-04-13
申请号：US15290560
申请日：2016-10-11
申请人： Samsung Electronics Co., Ltd.
发明人： Kyungho Lee , Seounghyun Kim , Hyuk An , Yun Ki Lee , Hyuk Soon Choi
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14605 , H01L27/14607 , H01L27/1461 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： An image sensor includes a semiconductor substrate, a first pair of photoelectric conversion regions in a first pixel region of the substrate and a first isolation structure between the photoelectric conversion regions of the first pair of photoelectric conversion regions. The sensor further includes a second pair of photoelectric conversion regions in a second pixel region of the substrate adjacent the first pixel region and a second isolation structure between the photoelectric conversion regions of the second pair of photoelectric conversion regions and having different optical properties than the first isolation structure. First and second different color filters (e.g., green and red) may be disposed on respective ones of the first and second pixel regions

6. 发明授权

US11532654B2 Image sensor 有权
公开(公告)号：US11532654B2
公开(公告)日：2022-12-20
申请号：US16848208
申请日：2020-04-14
申请人： Samsung Electronics Co., Ltd.
发明人： Eunsub Shim , Kyungho Lee , Sungsoo Choi
IPC分类号： H01L27/146 , H04N5/378 , H04N5/3745 , H03M1/56
摘要： An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

7. 发明申请

US20220224849A1 IMAGE SENSOR CONTROLLING A CONVERSION GAIN, IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME 有权
公开(公告)号：US20220224849A1
公开(公告)日：2022-07-14
申请号：US17711809
申请日：2022-04-01
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jungbin Yun , Hwanwoong Kim , Eunsub Shim , Kyungho Lee , Hongsuk Lee
IPC分类号： H04N5/355 , H04N5/343 , H04N5/369 , H04N5/374
摘要： Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

8. 发明授权

US11089253B2 Image sensor with controllable conversion gain 有权
公开(公告)号：US11089253B2
公开(公告)日：2021-08-10
申请号：US16511159
申请日：2019-07-15
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Eun Sub Shim , Kyungho Lee
IPC分类号： H04N5/335 , H04N5/378 , H03M1/12 , H01L27/146 , H04N5/355
摘要： An image sensor includes a pixel that includes a photoelectric conversion element converting an incident light to an electrical signal, a switch adjusting a capacitance of a floating diffusion (FD) node at which charges corresponding to the electrical signal are stored, and a readout circuit outputting an output voltage based on the FD node. An A/D converter may sample the output voltage transferred from the readout circuit through an output line respectively at a first time and a second time and generate a digital code based on a difference therebetween. A conversion gain controller may generate a conversion gain control signal by comparing the output voltage transferred from the readout circuit through the output line with a threshold voltage at a third time between the first and second times and provide the conversion gain control signal to the switch to set conversion gain of the pixel.

9. 发明申请

US20210144315A1 IMAGE SENSOR, IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME 有权
公开(公告)号：US20210144315A1
公开(公告)日：2021-05-13
申请号：US16997234
申请日：2020-08-19
申请人： SAMSUNG ELECTRONICS CO., LTD.
发明人： Jungbin YUN , Hwanwoong Kim , Eunsub Shim , Kyungho Lee , Hongsuk Lee
IPC分类号： H04N5/343 , H04N5/369 , H04N5/374
摘要： Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

10. 发明申请

US20210134865A1 IMAGE SENSOR 有权
公开(公告)号：US20210134865A1
公开(公告)日：2021-05-06
申请号：US16848208
申请日：2020-04-14
申请人： Samsung Electronics Co., Ltd.
发明人： Eunsub Shim , Kyungho Lee , Sungsoo Choi
IPC分类号： H01L27/146 , H04N5/378 , H04N5/3745 , H03M1/56
摘要： An image sensor includes a pixel array including first pixels and second pixels, each of the first and second pixels including photodiodes, a sampling circuit detecting a reset voltage and a pixel voltage from the first and second pixels and generating an analog signal, an analog-to-digital converter image data from the analog signal, and a signal processing circuit generating an image using the image data. Each of the first pixels includes a first conductivity-type well separating the photodiodes and having impurities of a first conductivity-type. The photodiodes have impurities of a second conductivity-type different from the first conductivity-type. Each of the second pixels includes a second conductivity-type well separating the photodiodes and having impurities of the second conductivity-type different from the first conductivity-type. A potential level of the second conductivity-type well is higher than a potential level of the first conductivity-type well.

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