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    • 8. 发明授权
    • Multi-energy radiation detectors and methods of manufacturing the same
    • 多能辐射探测器及其制造方法
    • US09158003B2
    • 2015-10-13
    • US13728013
    • 2012-12-27
    • Samsung Electronics Co., Ltd.
    • Sun-il KimJae-chul ParkSang-wook KimChang-jung Kim
    • G01T1/16H01L31/18G01T1/24H01L31/0352H01L31/119H01L27/146
    • G01T1/16G01T1/243H01L27/14676H01L31/035281H01L31/119H01L31/18Y02E10/50
    • A multi-energy radiation detector may include an array substrate including a plurality of unit circuits, and/or a photoelectric conversion layer on the array substrate. The photoelectric conversion layer may include a plurality of regions having thicknesses different from each other. A method of manufacturing a multi-energy radiation detector may include forming gate and first electrodes by forming and patterning a first metal layer on a substrate; forming an insulating layer on the gate and first electrodes; forming a channel layer by forming and patterning a semiconductor layer on the insulating layer; forming source, drain, and second electrodes by forming and patterning a second metal layer on the channel layer; forming a passivation layer to cover the source, drain, and second electrodes; forming a first photoelectric conversion layer on the passivation layer; and/or forming a second photoelectric conversion layer on part of the first photoelectric conversion layer.
    • 多能量辐射检测器可以包括阵列基板,其包括多个单元电路,和/或阵列基板上的光电转换层。 光电转换层可以包括具有彼此不同的厚度的多个区域。 制造多能量辐射检测器的方法可以包括通过在衬底上形成和图案化第一金属层来形成栅极和第一电极; 在栅极和第一电极上形成绝缘层; 通过在所述绝缘层上形成和图案化半导体层来形成沟道层; 通过在沟道层上形成和构图第二金属层来形成源极,漏极和第二电极; 形成钝化层以覆盖源极,漏极和第二电极; 在钝化层上形成第一光电转换层; 和/或在第一光电转换层的一部分上形成第二光电转换层。