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    • 7. 发明授权
    • Semiconductor light emitting device
    • 半导体发光器件
    • US09300111B2
    • 2016-03-29
    • US14154556
    • 2014-01-14
    • SAMSUNG ELECTRONICS CO., LTD.
    • Jong Ho LeeChan Mook LimYoung Chul ShinSu Hyun Jo
    • H01L33/00H01S5/02H01L33/38H01L33/44
    • H01S5/02H01L33/0079H01L33/382H01L33/44
    • A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.
    • 半导体发光器件包括导电衬底,层叠在导电衬底上的第二导电型半导体层,有源层和第一导电型半导体层的发光层叠体,与第一导电型电连接的第一电极层 半导体层,在导电基板和第二导电类型半导体层之间的第二电极层,第二电极层电连接到第二导电类型半导体层,以及在有源层和第二电极层之间的钝化层,钝化层 层覆盖发光层压板的有源层的至少一个侧表面。