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1. 发明申请

US20210111196A1 DISPLAY DEVICE 有权
公开(公告)号：US20210111196A1
公开(公告)日：2021-04-15
申请号：US16965053
申请日：2019-01-28
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei YAMAZAKI , Koji KUSUNOKI , Yoshiaki OIKAWA , Kensuke YOSHIZUMI
IPC分类号： H01L27/12 , G02F1/1368 , H01L27/32 , H01L29/66
摘要： A high-definition display device is provided. A display device with low power consumption is provided. A highly reliable display device is provided. The display device includes a first transistor and a display element electrically connected to the first transistor. The first transistor includes a first oxide, a second oxide, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor and the second conductor are positioned over the first oxide to be apart from each other. The first insulator is positioned over the first conductor and the second conductor and includes an opening. The opening overlaps with a portion between the first conductor and the second conductor. The third conductor is positioned in the opening. The second insulator is positioned between the third conductor, and the first oxide, the first conductor, the second conductor, and the first insulator. The second oxide is positioned between the second insulator, and the first oxide, the first conductor, the second conductor, and the first insulator.

2. 发明申请

US20210011956A1 INFORMATION SEARCH SYSTEM, INTELLECTUAL PROPERTY INFORMATION SEARCH SYSTEM, INFORMATION SEARCH METHOD, AND INTELLECTUAL PROPERTY INFORMATION SEARCH METHOD 有权
公开(公告)号：US20210011956A1
公开(公告)日：2021-01-14
申请号：US17034064
申请日：2020-09-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Yuji IWAKI , Hajime KIMURA , Yoshiaki OIKAWA , Natsuko TAKASE
IPC分类号： G06F16/93 , G06K9/66 , G06N3/04 , G06K9/00 , G06Q50/18 , G06K9/62 , G06N3/063 , G06K9/72 , G06F40/268
摘要： An information search system or an intellectual property information search system that is capable of highly accurate information search is provided. The intellectual property information search system includes a processing unit. First data and first reference analysis data are input to the processing unit. The first data includes first intellectual property information. The first reference analysis data includes plural pieces of second intellectual property information. The processing unit is configured to search the first reference analysis data for data similar to the first data to generate second data. The processing unit is configured to output the second data. The second data includes a piece of the second intellectual property information similar to the first intellectual property information and information showing the degree of similarity of the piece of the second intellectual property information to the first intellectual property information.

3. 发明申请

US20160307776A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20160307776A1
公开(公告)日：2016-10-20
申请号：US15198131
申请日：2016-06-30
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Mitsuhiro ICHIJO , Tetsuhiro TANAKA , Seiji YASUMOTO , Shun MASHIRO , Yoshiaki OIKAWA , Kenichi OKAZAKI
IPC分类号： H01L21/44 , H01L29/786 , H01L29/423 , C23C16/30 , H01L29/66 , H01L29/49 , H01L21/67 , C23C16/511 , H01L29/24 , H01L21/02
CPC分类号： H01L21/44 , C23C16/308 , C23C16/45578 , C23C16/511 , H01J37/32192 , H01J37/3244 , H01J37/32449 , H01J37/34 , H01L21/02274 , H01L21/0237 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02631 , H01L21/67167 , H01L29/24 , H01L29/42356 , H01L29/4908 , H01L29/66742 , H01L29/66969 , H01L29/7869
摘要： It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

4. 发明申请

US20150333036A1 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体基板和制造半导体器件的方法
公开(公告)号：US20150333036A1
公开(公告)日：2015-11-19
申请号：US14728134
申请日：2015-06-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Akihiro CHIDA , Yoshiaki OIKAWA , Chiho KAWANABE
IPC分类号： H01L23/00
CPC分类号： H01L24/96 , H01L21/561 , H01L21/568 , H01L21/78 , H01L27/1262 , H01L2924/0002 , H01L2924/00
摘要： A first semiconductor substrate is used which has a structure in which a peeling layer is not formed in a section subjected to a first dividing treatment, so that the peeling layer is not exposed at the end surface of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. In addition, a supporting material is provided on a layer to be peeled of the second semiconductor substrate before the second semiconductor substrate is subjected to a second dividing treatment.
摘要翻译：使用第一半导体基板，其具有其中在经受第一分割处理的部分中不形成剥离层的结构，使得当第二半导体基板上的剥离层不暴露在第二半导体基板的端面时被切出第一半导体衬底。另外，在对第二半导体衬底进行第二次分割处理之前，在要被剥离的第二半导体衬底的层上提供支撑材料。

5. 发明申请

US20150303072A1 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：显示装置及其制造方法
公开(公告)号：US20150303072A1
公开(公告)日：2015-10-22
申请号：US14790668
申请日：2015-07-02
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Junichiro SAKATA , Masashi TSUBUKU , Kengo AKIMOTO , Miyuki HOSOBA , Masayuki SAKAKURA , Yoshiaki OIKAWA
IPC分类号： H01L21/477 , H01L29/786 , H01L29/66
CPC分类号： H01L21/477 , G02F1/133345 , G02F1/1368 , H01L21/02565 , H01L21/02664 , H01L27/1225 , H01L27/1248 , H01L27/1251 , H01L27/1259 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.
摘要翻译：本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

6. 发明申请

US20140248744A1 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体基板和制造半导体器件的方法
公开(公告)号：US20140248744A1
公开(公告)日：2014-09-04
申请号：US14276239
申请日：2014-05-13
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Akihiro CHIDA , Yoshiaki OIKAWA , Chiho KAWANABE
IPC分类号： H01L27/12 , H01L21/78
CPC分类号： H01L24/96 , H01L21/561 , H01L21/568 , H01L21/78 , H01L27/1262 , H01L2924/0002 , H01L2924/00
摘要： Provided is a method for manufacturing a semiconductor device, which prevents waste generation from being caused peeling of films and prevents failure of peeling from being caused by waste due to peeling of films. A first semiconductor substrate is used which has a structure in which a peeling layer is not formed in a section subjected to a first dividing treatment, so that the peeling layer is not exposed at the end surface of a second semiconductor substrate when the second semiconductor substrate is cut out of the first semiconductor substrate. In addition, a supporting material is provided on a layer to be peeled of the second semiconductor substrate before the second semiconductor substrate is subjected to a second dividing treatment.
摘要翻译：提供一种制造半导体器件的方法，其防止废物产生被膜剥离，并防止由于剥离而导致的剥离不会导致剥离。使用第一半导体基板，其具有其中在经受第一分割处理的部分中不形成剥离层的结构，使得当第二半导体基板上的剥离层不暴露在第二半导体基板的端面时被切出第一半导体衬底。另外，在对第二半导体衬底进行第二次分割处理之前，在要被剥离的第二半导体衬底的层上提供支撑材料。

7. 发明申请

US20140099752A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20140099752A1
公开(公告)日：2014-04-10
申请号：US14104264
申请日：2013-12-12
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei YAMAZAKI , Hotaka MARUYAMA , Yoshiaki OIKAWA , Katsuaki TOCHIBAYASHI
IPC分类号： H01L29/66
CPC分类号： H01L27/1225 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L21/28185 , H01L27/1229 , H01L29/045 , H01L29/66969 , H01L29/7869
摘要： An oxide semiconductor layer with excellent crystallinity is formed to enable manufacture of transistors with excellent electrical characteristics for practical application of a large display device, a high-performance semiconductor device, etc. By first heat treatment, a first oxide semiconductor layer is crystallized. A second oxide semiconductor layer is formed over the first oxide semiconductor layer. By second heat treatment, an oxide semiconductor layer including a crystal region having the c-axis oriented substantially perpendicular to a surface is efficiently formed and oxygen vacancies are efficiently filled. An oxide insulating layer is formed over and in contact with the oxide semiconductor layer. By third heat treatment, oxygen is supplied again to the oxide semiconductor layer. A nitride insulating layer containing hydrogen is formed over the oxide insulating layer. By fourth heat treatment, hydrogen is supplied at least to an interface between the second oxide semiconductor layer and the oxide insulating layer.
摘要翻译：形成具有优异结晶度的氧化物半导体层，以便制造具有优异的电特性的晶体管，用于实际应用大型显示器件，高性能半导体器件等。通过第一热处理，第一氧化物半导体层被结晶。在第一氧化物半导体层上形成第二氧化物半导体层。通过第二热处理，有效地形成包括具有取向为基本上垂直于表面的c轴的晶体区域的氧化物半导体层，并且有效地填充氧空位。氧化物绝缘层形成在氧化物半导体层上并与氧化物半导体层接触。通过第三次热处理，再次向氧化物半导体层供给氧。在氧化物绝缘层上形成含有氢的氮化物绝缘层。通过第四热处理，至少向第二氧化物半导体层和氧化物绝缘层之间的界面供应氢。

8. 发明申请

US20230006164A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20230006164A1
公开(公告)日：2023-01-05
申请号：US17941148
申请日：2022-09-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shingo EGUCHI , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
IPC分类号： H01L51/50 , H01L27/12 , H01L27/32 , H01L51/00
摘要： An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

9. 发明申请

US20220278139A1 DISPLAY DEVICE 有权
公开(公告)号：US20220278139A1
公开(公告)日：2022-09-01
申请号：US17626307
申请日：2020-07-10
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Takayuki IKEDA , Hitoshi KUNITAKE , Koji KUSUNOKI , Yoshiaki OIKAWA , Shunpei YAMAZAKI
IPC分类号： H01L27/12 , H01L27/32 , H01Q1/24 , H04M1/02
摘要： A display device with a novel structure is provided. The display device includes a first substrate provided with a plurality of pixels including a display element, and a second substrate including a first conductive layer provided with a plurality of first openings. The first conductive layer has a function of an antenna capable of transmitting and receiving a radio signal. The pixel and the first opening include a region where the pixel and the first opening overlap with each other. The second substrate includes an element layer. The element layer includes a transistor. The transistor has a function of an amplifier capable of amplifying the radio signal. The transistor each includes a semiconductor layer including a metal oxide in a channel formation region. The metal oxide contains In, Ga, and Zn.

10. 发明申请

US20220029120A1 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
公开(公告)号：US20220029120A1
公开(公告)日：2022-01-27
申请号：US17496271
申请日：2021-10-07
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shingo EGUCHI , Yoshiaki OIKAWA , Kenichi OKAZAKI , Hotaka MARUYAMA
IPC分类号： H01L51/50 , H01L27/12 , H01L27/32 , H01L51/00
摘要： An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

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