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    • 7. 发明授权
    • TFT array substrate, manufacturing method thereof and display panel
    • TFT阵列基板,其制造方法和显示面板
    • US09373650B2
    • 2016-06-21
    • US14223966
    • 2014-03-24
    • Shanghai Tianma Micro-Electronics Co., Ltd.Tianma Micro-Electronics Co., Ltd.
    • Junhui Lou
    • H01L27/12H01L49/02
    • H01L27/1255H01L27/124H01L27/1259H01L28/60
    • A TFT array substrate is disclosed. The TFT array substrate includes a TFT area, which includes a TFT first electrode layer, a TFT second electrode layer, a TFT insulation layer, and a TFT etching stop layer. The TFT array substrate also includes also includes a storage capacitor, which includes a capacitor first electrode layer, a capacitor second electrode layer, a capacitor insulation layer, and a capacitor etching stop layer. The TFT first electrode layer and the capacitor first electrode layer are formed in a shared first electrode layer, the TFT second electrode layer and the capacitor second electrode layer are formed in a shared second electrode layer, the TFT insulation layer and the capacitor insulation layer are formed in a shared insulation layer, and the TFT etching stop layer and the capacitor etching stop layer are formed in a shared etching stop layer.
    • 公开了TFT阵列基板。 TFT阵列基板包括TFT区域,其包括TFT第一电极层,TFT第二电极层,TFT绝缘层和TFT蚀刻停止层。 TFT阵列基板还包括存储电容器,其包括电容器第一电极层,电容器第二电极层,电容器绝缘层和电容器蚀刻停止层。 TFT第一电极层和电容器第一电极层形成在共用的第一电极层中,TFT第二电极层和电容器第二电极层形成在共享的第二电极层中,TFT绝缘层和电容器绝缘层 形成在共用绝缘层中,并且TFT刻蚀停止层和电容器蚀刻停止层形成在共用蚀刻停止层中。