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1. 发明授权

US09847068B2 Scan driving circuit and LCD device 有权
公开(公告)号：US09847068B2
公开(公告)日：2017-12-19
申请号：US14411104
申请日：2014-05-26
申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD
发明人： Chao Dai
IPC分类号： G09G3/36 , G11C19/28
CPC分类号： G09G3/3677 , G09G2300/0408 , G09G2310/08 , G09G2330/08 , G09G2330/10 , G09G2330/12 , G11C19/28
摘要： A scan driving circuit includes a repair assembly, a pull-up assembly, a pull-up control assembly that drives the pull-up assembly, a pull-down maintaining assembly, and a reference low-level signal. When the pull-down maintaining assembly turns off in a work stage of a current scanning line, the repair assembly turns off. When the pull-down maintaining assembly turns on in the work stage of the current scanning line, the repair assembly is connected with the pull-down maintaining assembly. In the work stage of the current scanning line, the reference low-level signal is sent to the repair assembly via the turn-off unit, and turns off the pull-down maintaining assembly through the repair assembly.

2. 发明授权

US09805679B2 Scan driving circuit and NOR gate logic operation circuit thereof 有权
公开(公告)号：US09805679B2
公开(公告)日：2017-10-31
申请号：US14438606
申请日：2015-01-28
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Chao Dai
IPC分类号： G09G3/20 , G09G3/36 , H01L27/12 , H03K19/0944 , H03K19/20
CPC分类号： G09G3/3677 , G09G3/20 , G09G2300/0404 , G09G2310/0267 , G09G2310/0286 , G09G2310/0291 , H01L27/1225 , H03K19/0944 , H03K19/20
摘要： The disclosure is related to a scan driving circuit for an oxide semiconductor thin film transistor and the NOR gate logic operation circuit thereof. The NOR gate logic operation circuit includes a first invertor and a second invertor applied in the pull down holding circuit of the GOA circuit, and a plurality of transistors. The combination of the NTFT and the invertor displaces the original function of the PMOS element to realize a characteristic similar to an original COMS NOR operation circuit, thereby solving a design problem of the logic operation circuit using a IGZO TFT single element, such that a larger scale digital integrated circuit is further suitably integrated into the liquid crystal display.

3. 发明授权

US09767756B2 Scanning driving circuits and liquid crystal devices (LCD) with the same 有权
公开(公告)号：US09767756B2
公开(公告)日：2017-09-19
申请号：US14888425
申请日：2015-08-28
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Chao Dai
IPC分类号： G09G3/36
CPC分类号： G09G3/3685 , G09G3/3648 , G09G3/3674 , G09G3/3677 , G09G3/3696 , G09G2300/0408 , G09G2310/027 , G09G2310/0272
摘要： The present disclosure relates to a scanning driving circuit and a LCD. The scanning driving circuit includes first driving circuits and second diving circuits, each of the first driving circuits connects with each of the second diving circuits, and the first driving circuit and the second diving circuit are alternately arranged. Each of the first driving circuit and second diving circuit includes a pull-up module, a pull-up controlling module for driving the pull-up module, a reference voltage end, and a first pull-down maintaining unit. Each of the first driving circuit also includes a first pull-down maintaining controlling unit. The first and second driving circuit share the first pull-down maintaining control unit of the first driving circuit. In this way, the scanning driving circuit is stable, and the structure of the circuit is simple. The power consumption may be reduced and the border of the LCD may be narrowed down.

4. 发明授权

US09767754B2 Scan driving circuit for oxide semiconductor thin film transistors 有权
公开(公告)号：US09767754B2
公开(公告)日：2017-09-19
申请号：US15352486
申请日：2016-11-15
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Chao Dai
IPC分类号： G09G3/36 , H01L27/12
CPC分类号： G09G3/3677 , G09G3/3696 , G09G2300/0408 , G09G2310/0289 , G09G2310/06 , G09G2310/08 , H01L27/1225
摘要： Disclosed is a scan driving circuit for oxide semiconductor thin film transistors, in which a pull-down holding circuit part includes a main inverter and an auxiliary inverter. By introducing a constant low voltage level (DCL) and setting the constant low voltage level (DCL) less than the second negative voltage level (VSS2), which is in turn less than the first negative voltage level (VSS1), the influence of electrical property of the oxide semiconductor thin film transistors to the scan driving circuit, particularly the bad function due to the electric leakage issue, can be prevented to ensure that the pull-down holding circuit part can be normally pulled down in the functioning period and at higher voltage level in a non-functioning period to effectively maintain the first node (Q(N)) and the output end (G(N)) at low voltage level.

5. 发明授权

US09595234B2 Scan driving circuit having pull-up control assembly and LCD device 有权
标题翻译：具有上拉控制组件和LCD装置的扫描驱动电路
公开(公告)号：US09595234B2
公开(公告)日：2017-03-14
申请号：US14411106
申请日：2014-06-25
申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD
发明人： Chao Dai
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G3/36 , G09G2300/0408 , G09G2310/06 , G09G2310/08 , G09G2320/0214
摘要： A scan driving circuit includes a pull-up assembly, a pull-up control assembly that drives the pull-up assembly, a pull-down maintaining assembly, and a reference low-level signal. The reference low-level signal includes a first reference low-level signal and a second reference low-level signal. When the current scanning line is inactive, the pull-down maintaining assembly controls the reference low-level to be sent to the current scanning line and the output end of the pull-up control assembly according to a pull-down maintaining signal.
摘要翻译：扫描驱动电路包括上拉组件，驱动上拉组件的上拉控制组件，下拉维持组件和参考低电平信号。参考低电平信号包括第一参考低电平信号和第二参考低电平信号。当当前扫描线不活动时，下拉维持组件根据下拉维持信号控制要发送到当前扫描线和上拉控制组件的输出端的参考低电平。

6. 发明授权

US09524689B2 Scan driving circuit for oxide semiconductor thin film transistor 有权
标题翻译：氧化物半导体薄膜晶体管的扫描驱动电路
公开(公告)号：US09524689B2
公开(公告)日：2016-12-20
申请号：US14437828
申请日：2015-01-12
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Chao Dai
IPC分类号： G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0408 , G09G2310/0267 , G09G2310/0286 , G09G2310/06 , G09G2310/08 , G11C19/184 , G11C19/28
摘要： The invention provides a scan driving circuit for an oxide semiconductor thin film transistor. The scan driving circuit for an oxide semiconductor thin film transistor includes multiple cascade connected GOA units and a shared auxiliary inverter. Each of the GOA units includes a main inverter. The auxiliary inverter is electrically connected to each main inverter to form corresponding pull-down holding parts for the respective GOA units, which can achieve the sharing of the pull-down holding parts of the multiple stages GOA units, the number of TFT elements can be reduced and therefore GOA layout space as well as circuit power consumption can be reduced.
摘要翻译：本发明提供了一种用于氧化物半导体薄膜晶体管的扫描驱动电路。用于氧化物半导体薄膜晶体管的扫描驱动电路包括多个级联连接的GOA单元和共用辅助逆变器。每个GOA单元包括主逆变器。辅助逆变器电连接到每个主逆变器以形成用于各个GOA单元的相应的下拉保持部件，其可以实现多级GOA单元的下拉保持部件的共享，TFT元件的数量可以因此减少了GOA布局空间以及电路功耗。

7. 发明授权

US09472150B1 Gate driving circuit applied for 2D-3D signal setting 有权
标题翻译：门驱动电路应用于2D-3D信号设置
公开(公告)号：US09472150B1
公开(公告)日：2016-10-18
申请号：US14398739
申请日：2014-08-14
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Chao Dai
IPC分类号： G09G5/00 , G09G3/36 , H04N13/04
CPC分类号： G09G3/3648 , G09G3/003 , G09G3/3677 , G09G2300/04 , G09G2310/0286 , G09G2310/08 , G09G2320/0214 , G09G2330/021 , G11C19/184 , G11C19/28 , H04N13/344 , H04N13/359
摘要： The present invention provides a gate driving circuit applied for 2D-3D signal setting, comprising: a plurality of GOA units which are cascade connected, and a Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit controls charge to a Nth horizontal scanning line G(n) in a display area, and the Nth GOA unit comprises a pull-up controlling part, a pull-up part, a transmission part, a first pull-down part, a bootstrap capacitor part, a pull-down holding part and a pull-up compensation part; on the basis of the gate driving circuit utilizing the present GOA skill, the present invention adds a pull-up compensation part to compensate the leakage gap existing in the 2D signal transmission to ensure that the voltage level of the gate signal point Q(N) will not descend in leakage gap period; by introducing an additional DC control signal source DC to control the activation and deactivation of the pull-up compensation part for activating it in 2D mode to realize compensation and deactivating it in 3D mode to prevent the influence to the 3D signal transmission. The pull-up compensation part can be effectively controlled.
摘要翻译：本发明提供一种应用于2D-3D信号设定的栅极驱动电路，包括：串联连接的多个GOA单元，并且第NGOA单元将电荷控制在显示区域中的第N水平扫描线G（n）并且第NGOA单元将电荷控制在显示区域中的第N水平扫描线G（n），并且第NGOA单元包括上拉控制部分，上拉部分，发送部分，第一下拉自举电容器部分，下拉保持部分和上拉补偿部分; 基于利用本GOA技术的门驱动电路，本发明增加了上拉补偿部分，以补偿存在于2D信号传输中的泄漏间隙，以确保栅极信号点Q（N）的电压电平，不会在泄漏期间下降; 通过引入附加的DC控制信号源DC来控制上拉补偿部分的激活和去激活，以在2D模式下激活它，以在3D模式下实现补偿和去激活，以防止对3D信号传输的影响。可以有效控制上拉补偿部分。

8. 发明授权

US09257083B2 Self-healing gate driving circuit having two pull-down holding circuits connected via a bridge circuit 有权
标题翻译：具有通过桥接电路连接的两个下拉保持电路的自修复门驱动电路
公开(公告)号：US09257083B2
公开(公告)日：2016-02-09
申请号：US14348680
申请日：2014-01-21
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Chao Dai
IPC分类号： G09G3/36 , G09G3/00
CPC分类号： G09G3/3648 , G09G3/006 , G09G3/3677 , G09G2330/08
摘要： The claimed invention is related to a self-healing gate driving circuit. The self-healing gate driving circuit includes a plurality of GOA units connected in cascade. The N-th level GOA unit includes a pull-up control circuit 100, a pull-up circuit 200, a transfer-down circuit 300, a pull-down circuit 400, a boast capacitor 500, a first pull-down holding circuit 600, a second pull-down holding circuit 700 and a bridge circuit 500. The bridge circuit 800 includes the first TFT T55, and the gate of the TFT T55 connects to the gate signal point Q(N), and the drain and the source of the TFT T55 respectively connects to the first circuit point K(N) and the second circuit point P(N). During the operation, the first circuit point K(N) and the second circuit point P(N) are alternatively configured to be at a high potential. The self-healing gate driving circuit of the claimed invention can decrease the failure risk of the pull-down holding circuit due to the manufacture process or a long term operation of GOA circuit, and perform the function of the circuit self-healing.
摘要翻译：所要求保护的发明涉及自修复门驱动电路。自愈门驱动电路包括级联连接的多个GOA单元。第N级GOA单元包括上拉控制电路100，上拉电路200，转移电路300，下拉电路400，自举电容器500，第一下拉保持电路600 ，第二下拉保持电路700和桥接电路500.桥接电路800包括第一TFT T55，TFT T55的栅极连接到栅极信号点Q（N），漏极和源极 TFT T55分别连接到第一电路点K（N）和第二电路点P（N）。在操作期间，第一电路点K（N）和第二电路点P（N）交替地配置为处于高电位。要求发明的自愈门驱动电路可以降低由于制造过程或GOA电路的长期操作引起的下拉保持电路的故障风险，并且执行电路自愈功能。

9. 发明授权

US10204580B2 Scan-driving device with detective-driving circuit 有权
公开(公告)号：US10204580B2
公开(公告)日：2019-02-12
申请号：US14904957
申请日：2015-11-12
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Chao Dai
IPC分类号： G09G3/36
摘要： A scan-driving device is disclosed herein. The scan-driving device comprises a plurality of scan-driving circuits, a detective-driving circuit, and a modulating module. The scan-driving circuit comprises a n up-pull control module, an up-pull module, a down-transfer module, a down-pull module, a down-pull-sustain module, a bootstrap capacitor. The detective-driving circuit in the scan-driving device of the present invention is able to better maintain the ability of down-pull-sustain of the down-pull-sustain module, whereby the stability of the scan-driving device is increased.

10. 发明授权

US09767751B2 GOA circuit based on oxide semiconductor thin film transistor 有权
公开(公告)号：US09767751B2
公开(公告)日：2017-09-19
申请号：US14777521
申请日：2015-06-23
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.
发明人： Chao Dai
IPC分类号： G11C19/28 , G09G3/36
CPC分类号： G09G3/3677 , G09G2300/0408 , G09G2300/043 , G09G2300/0809
摘要： The present invention provides a GOA circuit based on oxide semiconductor thin film transistor. By adding the fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T55, T56, T57) respectively corresponding to the fourth, fifth, second nodes (S(N), K(N), P(N)) in the pull-down holding module (600). The fifty-fifth, fifty-sixth, fifty-seventh thin film transistors (T55, T56, T57) are controlled with the stage transfer signal of the GOA unit circuit of the former N−1th stage or the scan driving signal of the GOA unit circuit of the former N−1th stage to pull down the voltage levels of the fourth, fifth, second nodes (S(N), K(N), P(N)) under circumstance that the first node (Q(N)) is not completely boosted to rapidly deactivate the pull-down holding module (600) for ensuring the normal boost of the voltage level of the first node (Q(N)). The first node (Q(N)) is guaranteed to be high voltage level in the functioning period, and thus, the normal output of the GOA circuit is ensured.

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