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1. 发明申请

US20230089169A1 A METHOD FOR PRODUCING A CRYSTALLINE OXIDE SEMICONDUCTOR FILM AND A GALLIUM OXIDE FILM, AND A METHOD FOR PRODUCING A VERTICAL SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230089169A1
公开(公告)日：2023-03-23
申请号：US17795092
申请日：2020-12-17
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Takenori WATABE , Hiroshi HASHIGAMI
IPC分类号： H01L21/02 , C30B25/18
摘要： A method for producing a crystalline oxide semiconductor film in which, a crystalline oxide semiconductor layer and a light absorbing layer are laminated on a substrate, the light absorbing layer is irradiated with light to decompose the light absorbing layer and separate the crystalline oxide semiconductor layer and the substrate to produce a crystalline oxide semiconductor film. This provides a method for industrially advantageously producing a crystalline oxide semiconductor film, for example, a crystalline oxide semiconductor film useful for a semiconductor device (particularly a vertical element).

2. 发明申请

US20220352396A1 SOLAR CELL, SOLAR CELL MANUFACTURING SYSTEM, AND SOLAR CELL MANUFACTURING METHOD 有权
公开(公告)号：US20220352396A1
公开(公告)日：2022-11-03
申请号：US17864886
申请日：2022-07-14
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Ryo MITTA , Takenori WATABE , Hiroyuki OHTSUKA
IPC分类号： H01L31/0224 , H01B1/02 , H01B1/16 , H01B1/22 , H01L31/0216 , H01L31/068 , H01L31/18
摘要： An object of the present invention is to provide, at a low cost, a system and a method for manufacturing a solar cell having high conversion efficiency. A solar cell according to the present invention is characterized by including a passivation film that protects a semiconductor substrate, a first finger electrode connected to the semiconductor substrate on a main surface of the semiconductor substrate, a first bus bar electrode that intersects the first finger electrode, and an intermediate layer provided in an intersecting position of the first finger electrode and the first bus bar electrode . The solar cell is characterized in that the first finger electrode and the first bus bar electrode are electrically connected to each other via the intermediate layer.

3. 发明申请

US20210226080A1 HIGH EFFICIENCY SOLAR CELL AND METHOD FOR MANUFACTURING HIGH EFFICIENCY SOLAR CELL 有权
公开(公告)号：US20210226080A1
公开(公告)日：2021-07-22
申请号：US17222281
申请日：2021-04-05
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Hiroshi HASHIGAMI , Shun MORIYAMA , Takenori WATABE , Hiroyuki OHTSUKA
IPC分类号： H01L31/18 , C08G73/10 , G01N23/2258 , H01L31/0216 , H01L31/0224 , H01L31/05
摘要： A solar cell including a semiconductor substrate having a first conductivity type an emitter region, having a second conductivity type opposite to the first conductivity type, on a first main surface of the semiconductor substrate an emitter electrode which is in contact with the emitter region a base region having the first conductivity type a base electrode which is in contact with the base region and an insulator film for preventing an electrical short-circuit between the emitter region and the base region, wherein the insulator film is made of a polyimide, and the insulator film has a C6H11O2 detection count number of 100 or less when the insulator film is irradiated with Bi5++ ions with an acceleration voltage of 30 kV and an ion current of 0.2 pA by a TOF-SIMS method. The solar cell can have excellent weather resistance and high photoelectric conversion characteristics.

4. 发明申请

US20200227584A1 METHODS FOR MANUFACTURING HIGH PHOTOELECTRIC CONVERSION EFFICIENCY SOLAR CELL 审中-公开
公开(公告)号：US20200227584A1
公开(公告)日：2020-07-16
申请号：US16829322
申请日：2020-03-25
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Takenori WATABE , Hiroshi HASHIGAMI , Hiroyuki OHTSUKA
IPC分类号： H01L31/18 , H01L31/05 , H01L31/0224 , H01L31/0216 , H01L31/068
摘要： The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere

5. 发明申请

US20190221700A1 HIGH EFFICIENCY BACK CONTACT TYPE SOLAR CELL, SOLAR CELL MODULE, AND PHOTOVOLTAIC POWER GENERATION SYSTEM 审中-公开
公开(公告)号：US20190221700A1
公开(公告)日：2019-07-18
申请号：US15575339
申请日：2016-12-13
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Ryo MITTA , Hiroshi HASHIGAMI , Takenori WATABE , Hiroyuki OHTSUKA
IPC分类号： H01L31/068 , H01L31/0224 , H01L31/0236 , H01L31/18 , H01L31/05
CPC分类号： H01L31/0682 , H01L31/022458 , H01L31/02366 , H01L31/0516 , H01L31/068 , H01L31/18 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： In a back contact type solar cell in which an impurity diffusion layer where second conductive type impurities are diffused is formed on a back surface, as a non-light receiving surface, of a first conductive type semiconductor substrate, and an electrode in contact with the impurity diffusion layer is provided, a surface concentration of the impurities in the impurity diffusion layer is not less than 5×1017 atms/cm3 and not more than 5×1019 atms/cm3, and a diffusion depth of the impurities in the impurity diffusion layer is not smaller than 1 μm and not larger than 2.9 μm from a top of the back surface. It is thereby possible to provide a high efficiency back contact type solar cell which can be manufactured by a simple method at low cost.

6. 发明申请

US20220223406A1 METHOD FOR MANUFACTURING GALLIUM OXIDE FILM 有权
公开(公告)号：US20220223406A1
公开(公告)日：2022-07-14
申请号：US17299051
申请日：2019-12-03
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Takenori WATABE , Hiroshi HASHIGAMI
IPC分类号： H01L21/02 , C23C16/448 , C23C16/40
摘要： The present invention is a method for manufacturing a gallium oxide film where a mist generated by atomizing a raw-material solution or by forming a raw-material solution into droplets is conveyed using a carrier gas, the mist is heated, and the mist is subjected to a thermal reaction on the substrate to form a film, where as the raw-material solution, a raw-material solution containing at least a chloride ion and a gallium ion is used, and the mist is heated for 0.002 seconds or more and 6 seconds or less. This provides a method for manufacturing an α-gallium oxide film at low cost with excellent film forming speed.

7. 发明申请

US20200176626A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20200176626A1
公开(公告)日：2020-06-04
申请号：US16784349
申请日：2020-02-07
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Hiroyuki OTSUKA , Takenori WATABE
IPC分类号： H01L31/068 , H01L31/036 , H01L31/0288 , H01L31/18 , H01L31/0392 , H01L31/0352
摘要： A solar cell has a P-type silicon substrate in which one main surface is a light-receiving surface and another main surface is a backside, a dielectric film on the backside, and an N-conductivity type layer in at least a part of the light-receiving surface of the P-type silicon substrate. The P-type silicon substrate is a silicon substrate doped with gallium, and the backside of the P-type silicon substrate contains a diffused group III element.

8. 发明申请

US20190181288A1 SOLAR CELL WITH HIGH PHOTOELECTRIC CONVERSION EFFICIENCY AND METHOD FOR MANUFACTURING SOLAR CELL WITH HIGH PHOTOELECTRIC CONVERSION EFFICIENCY 审中-公开
公开(公告)号：US20190181288A1
公开(公告)日：2019-06-13
申请号：US16076173
申请日：2016-11-07
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Hiroshi HASHIGAMI , Takenori WATABE , Hiroyuki OHTSUKA , Ryo MITTA
IPC分类号： H01L31/068 , H01L31/0216 , H01L31/0224 , H01L31/18
摘要： A back surface electrode type solar cell in which a p-type region having a p-conductive type, and an n-type region which has an n-conductive type and in which maximum concentration of additive impurities for providing the n-conductive type in a substrate width direction is equal to or higher than 5×1018 atoms/cm3 are disposed on a first main surface of a crystal silicon substrate, a first passivation film is disposed so as to cover the p-type region and the n-type region, and a second passivation film is disposed on a second main surface which is a surface opposite to the first main surface so as to cover the second main surface, the first passivation film and the second passivation film being formed with a compound containing oxide aluminum.

9. 发明申请

US20190165191A1 MANUFACTURING METHOD OF SOLAR CELL WITH HIGH PHOTOELECTRIC CONVERSION EFFICIENCY AND SOLAR CELL WITH HIGH PHOTOELECTRIC CONVERSION EFFICIENCY 审中-公开
公开(公告)号：US20190165191A1
公开(公告)日：2019-05-30
申请号：US16063759
申请日：2016-10-14
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Takenori WATABE , Ryo MITTA , Hiroshi HASHIGAMI , Hiroyuki OHTSUKA
IPC分类号： H01L31/0352 , H01L31/0224 , H01L31/18 , H01L31/05
CPC分类号： H01L31/03529 , H01L31/022425 , H01L31/022441 , H01L31/0504 , H01L31/18 , H01L31/1876 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing a solar cell having preparing a semiconductor substrate having a dielectric film on at least a first main surface, partially removing the dielectric film of the semiconductor substrate, and forming an electrode along a region where the dielectric film is partially removed, including measuring relative positional relationship between a position of a region where the dielectric film is partially removed and a position of the formed electrode in the semiconductor substrate after partially removing the dielectric film and forming the electrode, wherein for a newly prepared semiconductor substrate having a dielectric film on at least a first main surface, the dielectric film is partially removed after adjusting a position of a region based on the measured positional relationship. This improves the yield ratio of the solar cell by reducing positional displacement between the region where the dielectric film is partially removed and the electrode.

10. 发明申请

US20160118515A1 BACK CONTACT TYPE SOLAR BATTERY CELL 审中-公开
标题翻译：返回联系方式太阳能电池
公开(公告)号：US20160118515A1
公开(公告)日：2016-04-28
申请号：US14892845
申请日：2014-05-08
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Chikara MORI , Takenori WATABE , Hiroyuki OTSUKA
IPC分类号： H01L31/0224
CPC分类号： H01L31/022458 , H01L31/022433 , H01L31/022441 , H01L31/0516 , H01L31/0682 , Y02E10/547
摘要： A back contact type solar battery which provides a reduced electric power loss, free positioning of a bus bar, and a simple manufacturing process. The solar battery includes: semiconductor substrate; first conductivity type region formed on back surface side located on the opposite side of acceptance surface side of the semiconductor substrate; second conductivity type region formed on the back surface side of the semiconductor substrate; first conductivity type collecting electrode linearly formed on the first conductivity type region; and second conductivity type collecting electrode linearly formed on the second conductivity type region. The first and second conductivity type regions are alternately arranged. Each of the first and second conductivity type collecting electrodes has discontinuous places. The discontinuous places of each conductivity type are substantially aligned on straight line in arrangement direction in which the first and second conductivity type regions are alternately arranged.
摘要翻译：背面接触式太阳能电池，其提供降低的电力损失，母线的自由定位以及简单的制造工艺。太阳能电池包括：半导体衬底; 第一导电类型区域形成在位于半导体衬底的接受表面侧相对侧的背表面侧上; 形成在所述半导体衬底的背面侧的第二导电类型区域; 在第一导电类型区域上线性形成的第一导电型集电极; 和在第二导电类型区域上线性形成的第二导电型集电极。交替地布置第一和第二导电类型区域。第一和第二导电类型收集电极中的每一个具有不连续的位置。每个导电类型的不连续位置在交替布置第一和第二导电类型区域的排列方向上的直线上基本对齐。

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