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1. 发明授权

US09987721B2 Double-side polishing method 有权
公开(公告)号：US09987721B2
公开(公告)日：2018-06-05
申请号：US14421578
申请日：2013-08-08
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Masanao Sasaki , Kazuaki Aoki , Taichi Yasuda , Taketoshi Sato , Takehiro Yuasa , Kazumasa Asai , Daisuke Furukawa
IPC分类号： B24B37/28 , B24B37/08 , H01L21/304 , H01L21/02
CPC分类号： B24B37/28 , B24B37/08 , H01L21/02024 , H01L21/304
摘要： A double-side polishing method of polishing both surfaces of a wafer by holding the wafer with a carrier including a holding hole configured to hold the wafer and a ring-shaped resin insert disposed along an internal circumference of the holding hole, the resin insert having an inner circumferential surface configured to contact a peripheral portion of the wafer, interposing the carrier between upper and lower turn tables to which polishing pads are attached, polishing both the surfaces of the wafer while maintaining planarity of the inner circumferential surface at or below 100 μm and verticalness of the inner circumferential surface at or below 5°. The method can inhibit the degradation of the flatness of the polished wafer, such as particularly an outer circumferential sag, due to variation in shape of the inner circumferential surface of the resin insert of a carrier.

2. 发明申请

US20150217425A1 DOUBLE-SIDE POLISHING METHOD 有权
标题翻译：双面抛光方法
公开(公告)号：US20150217425A1
公开(公告)日：2015-08-06
申请号：US14421578
申请日：2013-08-08
申请人： SHIN-ETSU HANDOTAI CO., LTD.
发明人： Masanao Sasaki , Kazuaki Aoki , Taichi Yasuda , Taketoshi Sato , Takehiro Yuasa , Kazumasa Asai , Daisuke Furukawa
IPC分类号： B24B37/28 , H01L21/304
CPC分类号： B24B37/28 , B24B37/08 , H01L21/02024 , H01L21/304
摘要： A double-side polishing method of polishing both surfaces of a wafer by holding the wafer with a carrier including a holding hole configured to hold the wafer and a ring-shaped resin insert disposed along an internal circumference of the holding hole, the resin insert having an inner circumferential surface configured to contact a peripheral portion of the wafer, interposing the carrier between upper and lower turn tables to which polishing pads are attached, polishing both the surfaces of the wafer while maintaining planarity of the inner circumferential surface at or below 100 μm and verticalness of the inner circumferential surface at or below 5°. The method can inhibit the degradation of the flatness of the polished wafer, such as particularly an outer circumferential sag, due to variation in shape of the inner circumferential surface of the resin insert of a carrier.
摘要翻译：一种双面抛光方法，通过用包括保持晶片的保持孔的载体和沿着保持孔的内周设置的环状树脂插入件保持晶片来研磨晶片的两个表面，所述树脂插入件具有内周表面，其构造成接触晶片的周边部分，将载体插入到抛光垫附着的上转台和下转台之间，抛光晶片的两个表面，同时保持内周面的平面度在100μm以下内周面的垂直度为5°以下。由于载体的树脂插入物的内周面的形状的变化，该方法可以抑制抛光的晶片的平坦度的劣化，例如特别是外周下垂。

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