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1. 发明授权

US09705034B2 Light-emitting diode, method for manufacturing light-emitting diode, light-emitting diode lamp and illumination device 有权
公开(公告)号：US09705034B2
公开(公告)日：2017-07-11
申请号：US14353239
申请日：2012-10-02
申请人： SHOWA DENKO K.K.
发明人： Atsushi Matsumura , Yuu Tokunaga
IPC分类号： H01L33/46 , H01L33/60 , H01L33/42 , H01L33/36 , H01L33/14 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/44 , H01L21/02
CPC分类号： H01L33/145 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0066 , H01L33/0079 , H01L33/36 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/44
摘要： A light-emitting diode, a method of manufacturing the same, a lamp and an illumination device. A light-emitting diode (100) is provided with a compound semiconductor layer (10) including a light-emitting layer (24) provided on a substrate (1); an ohmic contact electrode (7) provided between the substrate and compound semiconductor layer; an ohmic electrode (11) provided on the side of the compound semiconductor layer opposite the substrate; a surface electrode (12) including a branch section (12b) provided so as to cover the surface of the ohmic electrode and a pad section (12a) coupled to the branch section; and a current-blocking portion (13) provided between an under-pad light-emitting layer (24a) arranged in an area of the light-emitting layer that overlaps the pad section (12a) and a light-emitting layer arranged in an area except the area that overlaps the pad section, to prevent current from being supplied to the under-pad light-emitting layer.

2. 发明授权

US09705043B2 Light-emitting diode, light-emitting diode lamp, and illumination device 有权
公开(公告)号：US09705043B2
公开(公告)日：2017-07-11
申请号：US14434801
申请日：2013-10-08
申请人： SHOWA DENKO K.K.
发明人： Atsushi Matsumura , Yu Tokunaga
IPC分类号： H01L33/40 , H01L33/38 , H01L33/30 , H01L33/44 , H01L33/10 , H01L33/00
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/10 , H01L33/30 , H01L33/405 , H01L33/44
摘要： In a light-emitting diode, a plurality of dot-shaped ohmic contact electrodes are provided between a metal reflective film and a compound semiconductor layer, an ohmic electrode and a surface electrode composed of a pad portion and a plurality of linear portions connected to the pad portion are provided in that order on the opposite side of the compound semiconductor layer from the semiconductor substrate, the surface of the ohmic electrode is covered with the linear portions, the ohmic contact electrodes and the ohmic electrode are formed in positions that do not overlap with the pad portion in plan view, and among the plurality of ohmic contact electrodes, 5% or more and 40% or less of the ohmic contact electrodes are disposed in positions that overlap with the linear portions in plan view.

3. 发明申请

US20150255680A1 LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP, AND ILLUMINATION DEVICE 有权
标题翻译：发光二极管，发光二极管灯和照明装置
公开(公告)号：US20150255680A1
公开(公告)日：2015-09-10
申请号：US14434801
申请日：2013-10-08
申请人： SHOWA DENKO K.K.
发明人： Atsushi Matsumura , Yu Tokunaga
IPC分类号： H01L33/38 , H01L33/44 , H01L33/30 , H01L33/10
CPC分类号： H01L33/387 , H01L33/0079 , H01L33/10 , H01L33/30 , H01L33/405 , H01L33/44
摘要： In a light-emitting diode, a plurality of dot-shaped ohmic contact electrodes are provided between a metal reflective film and a compound semiconductor layer, an ohmic electrode and a surface electrode composed of a pad portion and a plurality of linear portions connected to the pad portion are provided in that order on the opposite side of the compound semiconductor layer from the semiconductor substrate, the surface of the ohmic electrode is covered with the linear portions, the ohmic contact electrodes and the ohmic electrode are formed in positions that do not overlap with the pad portion in plane view, and among the plurality of ohmic contact electrodes, 5% or more and 40% or less of the ohmic contact electrodes are disposed in positions that overlap with the linear portions in plane view.
摘要翻译：在发光二极管中，多个点状欧姆接触电极设置在金属反射膜和化合物半导体层之间，欧姆电极和由焊盘部分和多个线性部分连接的表面电极组成，在半导体基板的与化合物半导体层相反的一侧上依次设置焊盘部分，欧姆电极的表面被线状部分覆盖，欧姆接触电极和欧姆电极形成在不重叠的位置其中焊盘部分在平面图中，并且在多个欧姆接触电极中，欧姆接触电极的5％以上且40％以下设置在与平面图中的直线部分重叠的位置。

4. 发明申请

US20140327028A1 LIGHT-EMITTING DIODE, METHOD FOR MANUFACTURING LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND ILLUMINATION DEVICE 有权
标题翻译：发光二极管，制造发光二极管的方法，发光二极管灯和照明装置
公开(公告)号：US20140327028A1
公开(公告)日：2014-11-06
申请号：US14353239
申请日：2012-10-02
申请人： SHOWA DENKO K.K.
发明人： Atsushi Matsumura , Yuu Tokunaga
IPC分类号： H01L33/14 , H01L33/36 , H01L33/00
CPC分类号： H01L33/145 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L33/0066 , H01L33/0079 , H01L33/36 , H01L33/38 , H01L33/387 , H01L33/405 , H01L33/44
摘要： A light-emitting diode, a method of manufacturing the same, a lamp and an illumination device. A light-emitting diode (100) is provided with a compound semiconductor layer (10) including a light-emitting layer (24) provided on a substrate (1); an ohmic contact electrode (7) provided between the substrate and compound semiconductor layer; an ohmic electrode (11) provided on the side of the compound semiconductor layer opposite the substrate; a surface electrode (12) including a branch section (12b) provided so as to cover the surface of the ohmic electrode and a pad section (12a) coupled to the branch section; and a current-blocking portion (13) provided between an under-pad light-emitting layer (24a) arranged in an area of the light-emitting layer that overlaps the pad section (12a) and a light-emitting layer arranged in an area except the area that overlaps the pad section, to prevent current from being supplied to the under-pad light-emitting layer.
摘要翻译：发光二极管，其制造方法，灯和照明装置。发光二极管（100）设置有包括设置在基板（1）上的发光层（24）的化合物半导体层（10）。设置在基板和化合物半导体层之间的欧姆接触电极（7）设置在与衬底相对的化合物半导体层侧的欧姆电极（11）包括设置成覆盖欧姆电极的表面的分支部分（12b）的表面电极（12）和耦合到分支部分的焊盘部分（12a）; 以及电流阻挡部（13），设置在配置在与所述焊盘部（12a）重叠的所述发光层的区域中的下焊盘发光层（24a）和配置在所述发光层的区域除了与焊盘部分重叠的区域之外，以防止电流被供应到底焊盘发光层。

5. 发明授权

US10693036B2 Method for manufacturing tunnel junction layer 有权
公开(公告)号：US10693036B2
公开(公告)日：2020-06-23
申请号：US16401361
申请日：2019-05-02
申请人： SHOWA DENKO K.K.
发明人： Akira Uzawa , Noriyoshi Seo , Atsushi Matsumura , Noriyuki Aihara
IPC分类号： H01L33/06 , H01L33/00 , H01L33/30 , H01L33/40 , H01L33/04 , H01L33/08
摘要： A method for manufacturing a tunnel junction layer using organic vapor phase deposition, the method including: a first process that supplies a first material gas containing a group III element, a second material gas containing a group V element, and a third material gas containing a dopant of a first conductivity type, onto a compound semiconductor layer on which the tunnel junction layer is to be laminated; a second process that stops supplying the first material gas, the second material gas and the third material gas, and supplies a fourth material gas containing a dopant of a second conductivity type opposite to the first conductivity type; and a third process that continues to supply the fourth material gas, and further supplies a fifth material gas containing a group III element and a sixth material gas containing a group V element.

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