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1. 发明授权

US09899102B2 Semiconductor device and operating method thereof 有权
公开(公告)号：US09899102B2
公开(公告)日：2018-02-20
申请号：US14953194
申请日：2015-11-27
申请人： SK hynix Inc.
发明人： Sam Kyu Won , Myung Su Kim , Jae Won Cha
IPC分类号： G11C29/04 , G11C16/12 , G11C29/02 , G11C29/12 , G11C29/50 , G11C16/28 , G11C16/34
CPC分类号： G11C29/025 , G11C16/28 , G11C16/3459 , G11C16/349 , G11C29/12005 , G11C29/50004 , G11C2029/1202
摘要： A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.

2. 发明授权

US10163523B2 Semiconductor device and operating method thereof 有权
公开(公告)号：US10163523B2
公开(公告)日：2018-12-25
申请号：US15866094
申请日：2018-01-09
申请人： SK hynix Inc.
发明人： Sam Kyu Won , Myung Su Kim , Jae Won Cha
IPC分类号： G11C29/04 , G11C29/02 , G11C29/12 , G11C29/50 , G11C16/28 , G11C16/34
摘要： A method of operating a semiconductor memory device includes applying a program pulse at least once to each of a plurality of pages; performing a pre-read operation on a reference page among the plurality of pages through an initial test voltage; repeating the pre-read operation by controlling the initial test voltage until a result of the pre-read operation is a pass; setting the initial test voltage of when the result of the pre-read operation is the pass as a reference test voltage; and detecting a defective page among the plurality of pages by performing read operations on the plurality of pages through the reference test voltage.

3. 发明授权

US09275745B2 Semiconductor device and method of operating the same 有权
标题翻译：半导体装置及其操作方法
公开(公告)号：US09275745B2
公开(公告)日：2016-03-01
申请号：US13934994
申请日：2013-07-03
申请人： SK hynix Inc.
发明人： Sam Kyu Won , Duck Ju Kim , Won Kyung Kang
IPC分类号： G06F3/06 , G11C16/22 , G11C8/20 , G11C7/02
CPC分类号： G11C16/22 , G11C7/02 , G11C8/20
摘要： A semiconductor device includes a memory cell array includes a plurality of memory blocks, each of the memory blocks including a plurality of pages, wherein at least one of the plurality of memory blocks functions as a first storage unit to store a plurality of page addresses associated with the plurality of pages. A second storage unit loads a page address stored in the first storage unit. A control circuit is configured to cancel a program operation if an externally inputted page address is less than or equal to the page address loaded into the second storage unit, and perform the program operation and update the second storage unit with the externally inputted page address if the externally input page address is greater than the page address loaded into the second storage unit.
摘要翻译：半导体器件包括存储单元阵列，其包括多个存储器块，每个存储器块包括多个存储器块，其中所述多个存储器块中的至少一个用作第一存储单元，用于存储多个页面地址相关联与多页。第二存储单元加载存储在第一存储单元中的页地址。如果外部输入的页面地址小于或等于加载到第二存储单元中的页面地址，则控制电路被配置为取消编程操作，并且执行程序操作并且用外部输入的页面地址来更新第二存储单元，如果外部输入的页面地址大于加载到第二个存储单元中的页面地址。

4. 发明授权

US08908462B2 Semiconductor device including current compensator 有权
标题翻译：半导体器件包括电流补偿器
公开(公告)号：US08908462B2
公开(公告)日：2014-12-09
申请号：US13845350
申请日：2013-03-18
申请人： SK Hynix Inc.
发明人： Sam Kyu Won , Cheul Hee Koo , Duck Ju Kim , Won Kyung Kang
IPC分类号： G11C5/14 , G05F3/02
CPC分类号： G11C5/147 , G05F3/02 , G11C5/145
摘要： The present technology relates to an electronic device, and more particularly, to a semiconductor device. The semiconductor device includes a peripheral circuit, a power output line connected to the peripheral circuit and configured to transmit an operation voltage to the peripheral circuit, a current compensator including an OP-amplifier connected to the power output line, and a capacitor connected between an output terminal of the OP-amplifier and the power output line.
摘要翻译：本技术涉及电子设备，更具体地，涉及一种半导体器件。半导体器件包括外围电路，连接到外围电路并被配置为向外围电路传输工作电压的电力输出线，包括连接到电力输出线的OP放大器的电流补偿器，以及连接在外部电路 OP放大器的输出端和电源输出线。

5. 发明授权

US09013945B2 Token ring architecture based memory system and operating method to optimize current consumption 有权
标题翻译：基于令牌环架构的内存系统和操作方法来优化电流消耗
公开(公告)号：US09013945B2
公开(公告)日：2015-04-21
申请号：US13711279
申请日：2012-12-11
申请人： SK Hynix Inc.
发明人： Sam Kyu Won , Sung Hyun Jung
IPC分类号： G11C5/14 , G06F15/16 , G06F13/40 , G11C7/22
CPC分类号： G11C5/14 , G11C7/22
摘要： A memory system includes first to third memory devices each having an input terminal for receiving a token signal and an output terminal for transmitting the token signal, wherein the input terminal of each of the first to third memory devices are connected to the output terminal of another memory device through a ring topology, a subset of the first to third memory devices substantially simultaneously perform an operation of consuming a peak current in response to any one of a plurality of token signals, and each of the first to third memory devices possesses only any one of the plurality of token signals and transmits the other token signals to another memory device.
摘要翻译：存储器系统包括第一至第三存储器件，每个存储器件具有用于接收令牌信号的输入端子和用于发送令牌信号的输出端子，其中第一至第三存储器件中的每一个的输入端子连接到另一个的输出端子存储器件通过环形拓扑结构，第一至第三存储器件的子集基本上同时执行响应于多个令牌信号中的任何一个消耗峰值电流的操作，并且第一至第三存储器器件中的每一个仅具有任何多个令牌信号中的一个，并将另一个令牌信号发送到另一个存储器件。

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