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1. 发明授权

US10468449B2 Image sensor and methods for fabricating the same 有权
公开(公告)号：US10468449B2
公开(公告)日：2019-11-05
申请号：US15606095
申请日：2017-05-26
申请人： SK hynix Inc.
发明人： Cha-Young Lee
IPC分类号： H01L27/146
摘要： Disclosed is an image sensor, which includes a first PD isolation region for determining first to fourth PD regions, an FD isolation region formed between the first to fourth PD regions, and a floating diffusion formed in the FD isolation region. Horizontal distances from a perimeter of the floating diffusion to interfaces between the FD isolation region and the first to fourth PD regions are equal to each other.

2. 发明授权

US10411054B2 Image sensor 有权
公开(公告)号：US10411054B2
公开(公告)日：2019-09-10
申请号：US16217963
申请日：2018-12-12
申请人： SK hynix Inc.
发明人： Pyong-Su Kwag , Young-Jun Kwon , Cha-Young Lee
IPC分类号： H01L27/146 , H01L29/423 , H01L29/786 , H04N5/378 , H01L27/142
摘要： An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

3. 发明授权

US09735197B1 Image sensor including a transfer transistor having a vertical channel and pixel transistors having thin film channels 有权
公开(公告)号：US09735197B1
公开(公告)日：2017-08-15
申请号：US15333856
申请日：2016-10-25
申请人： SK hynix Inc.
发明人： Pyong-Su Kwag , Min-Ki Na , Cha-Young Lee
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14812 , H01L27/14616 , H01L27/14643
摘要： Image sensors are provided. The image sensor may include a photodiode formed in a substrate, a lower interlayer dielectric layer formed over the substrate, a drive transistor gate electrode formed over the lower interlayer dielectric layer, and a transfer transistor gate electrode including an upper portion and a lower portion. The upper portion of the transfer transistor gate electrode may be formed over the drive transistor gate electrode. The lower portion of the transfer transistor gate electrode may be formed in a pillar shape and vertically extends from the upper portion of the transfer transistor gate electrode through the drive transistor gate electrode and the lower interlayer dielectric layer into the substrate.

4. 发明授权

US10438981B2 Image sensor 有权
公开(公告)号：US10438981B2
公开(公告)日：2019-10-08
申请号：US15251998
申请日：2016-08-30
申请人： SK hynix Inc.
发明人： Pyong-Su Kwag , Young-Jun Kwon , Cha-Young Lee
IPC分类号： H01L27/146 , H01L29/423 , H01L29/786 , H04N5/378
摘要： An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.

5. 发明授权

US10424609B2 Image sensor with reduced fixed pattern noise 有权
公开(公告)号：US10424609B2
公开(公告)日：2019-09-24
申请号：US15599607
申请日：2017-05-19
申请人： SK hynix Inc.
发明人： Cha-Young Lee , Sung-Wook Cho
IPC分类号： H01L27/146 , H01L27/148
摘要： An image sensor may include a pixel array. The pixel array may include a plurality of sub pixel arrays arranged two-dimensionally. Each of the plurality of sub pixel arrays may include a first pixel block and a second pixel block adjacent to the first pixel block in a row direction. Each of the first and second pixel blocks may include a light reception unit including first to fourth unit pixels arranged in a 2×2 matrix structure and a driving circuit. The driving circuit of the first pixel block may be positioned at an upper side of the light reception unit of the first pixel block, and the driving circuit of the second pixel block may be positioned at a lower side of the light reception unit of the first pixel block. The upper side of the first pixel block and an upper side of the second pixel block may be aligned with each other in the row direction, and a lower side of the first pixel block and the lower side of the second pixel block may be aligned with each other in the row direction.

6. 发明授权

US09620540B1 Image sensor including vertical transfer gate 有权
公开(公告)号：US09620540B1
公开(公告)日：2017-04-11
申请号：US15019625
申请日：2016-02-09
申请人： SK hynix Inc.
发明人： Yun-Hui Yang , Pyong-Su Kwag , Young-Jun Kwon , Min-Ki Na , Sung-Kun Park , Donghyun Woo , Cha-Young Lee , Ho-Ryeong Lee
IPC分类号： H01L27/146
CPC分类号： H01L27/14614 , H01L27/14609 , H01L27/1461 , H01L27/14616 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H01L29/04 , H01L29/16 , H01L29/511 , H01L29/7827
摘要： An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

7. 发明授权

US10522577B2 Image sensor 有权
公开(公告)号：US10522577B2
公开(公告)日：2019-12-31
申请号：US15716586
申请日：2017-09-27
申请人： SK hynix Inc.
发明人： Cha-Young Lee
IPC分类号： H01L27/146 , H01L27/30
摘要： An image sensor may include: a pixel array having a plurality of pixels arranged in a matrix structure; and an image array including a plurality of image dots which are arranged in a matrix structure, and implemented by output signals of the respective pixels. The position of a first pixel in the pixel array may not correspond to the position of an image dot corresponding to the first pixel in the image array, and the position of a second pixel adjacent to the first pixel in the pixel array may correspond to the position of an image dot corresponding to the second pixel in the image array.

8. 发明授权

US10163961B2 Image sensor 有权
公开(公告)号：US10163961B2
公开(公告)日：2018-12-25
申请号：US15607110
申请日：2017-05-26
申请人： SK hynix Inc.
发明人： Cha-Young Lee
IPC分类号： H01L27/146
摘要： An image sensor may include a pixel array that includes a plurality of pixel blocks arranged in an M×N (where M and N are natural numbers) matrix structure, wherein, among the plurality of pixel blocks, when compared to any one pixel block as a first pixel block, any one pixel block as a second pixel block adjacent to the first pixel block in an M direction or an N direction has a planar shape that is obtained by inverting a planar shape of the first pixel block in the M direction. Each of the plurality of pixel blocks may include a light reception unit including a plurality of unit pixels which generate photocharges in response to incident light and are arranged in an m×n matrix structure to have a shared pixel structure; and a driving circuit suitable for outputting an image signal corresponding to the photocharges.

9. 发明授权

US09723188B2 Image sensor, method of manufacturing the image sensor, and electronic device including the image sensor 有权
公开(公告)号：US09723188B2
公开(公告)日：2017-08-01
申请号：US14821475
申请日：2015-08-07
申请人： SK hynix Inc.
发明人： Won-Jun Lee , Kyoung-In Lee , Cha-Young Lee
IPC分类号： H04N5/225 , H04N9/04 , H01L27/146
CPC分类号： H04N5/2254 , H01L27/14627 , H01L27/14685
摘要： Provided are an image sensor, a method of manufacturing the image sensor, and an electronic device including the image sensor. An image sensor according to an embodiment may include a photoelectric conversion element, a pixel lens formed over the photoelectric conversion element and comprising a plurality of light condensing layers, wherein an upper layer of plurality of light condensing layers has a smaller area than a lower layer, and the pixel lens comprises a color filter substance.

10. 发明授权

US09583522B2 Image sensor and electronic device including the same 有权
标题翻译：图像传感器和包括其的电子设备
公开(公告)号：US09583522B2
公开(公告)日：2017-02-28
申请号：US14818829
申请日：2015-08-05
申请人： SK hynix Inc.
发明人： Won-Jun Lee , Kyoung-In Lee , Cha-Young Lee
IPC分类号： H04N5/225 , H01L27/146 , H04N9/04
CPC分类号： H01L27/14621 , H01L27/1462 , H01L27/14625 , H01L27/14627 , H01L27/14629 , H04N9/04
摘要： Disclosed are an image sensor including a light collection member having a multi-layer step shape and an electronic device including the same. This technology can improve light condensing efficiency in a unit pixel since a corresponding pixel lens is included. Furthermore, light condensing efficiency in a unit pixel can be improved more effectively by controlling the width of a corresponding pixel lens so that the pixel lens corresponds to the wavelength of incident light whose color has been separated by a corresponding color filter. As described above, quantum efficiency in the photoelectric conversion element can also be improved since light condensing efficiency in a unit pixel is improved. As a result, performance of the image sensor can be improved.
摘要翻译：公开了一种图像传感器，其包括具有多层台阶形状的光收集构件和包括其的电子设备。该技术可以提高单位像素中的聚光效率，因为包括相应的像素透镜。此外，通过控制相应的像素透镜的宽度，可以更有效地提高单位像素中的聚光效率，使得像素透镜对应于颜色已经被相应的滤色器分离的入射光的波长。如上所述，由于单位像素中的聚光效率提高，所以光电转换元件的量子效率也可以提高。结果，可以提高图像传感器的性能。

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