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    • 3. 发明申请
    • IMAGE SENSOR
    • US20210159265A1
    • 2021-05-27
    • US16897820
    • 2020-06-10
    • SK hynix Inc.
    • Jae Hyung Jang
    • H01L27/148H01L27/146
    • An image sensor includes a substrate including a photodiode and first and second floating diffusion nodes which are disposed to be spaced apart from left and right of the photodiode, respectively, by a predetermined distance; a first transfer gate disposed on the substrate to overlap at least partially with the photodiode and the first floating diffusion node; and a second transfer gate disposed on the substrate to overlap at least partially with the photodiode and the second floating diffusion node, wherein each of the first transfer gate and the second transfer gate includes a first gate dielectric layer which overlaps at least partially with the photodiode and a second gate dielectric layer which overlaps at least partially with the first or second floating diffusion node, and wherein a thickness of the first gate dielectric layer is larger than a thickness of the second gate dielectric layer.
    • 7. 发明授权
    • Image sensing device
    • US11335727B2
    • 2022-05-17
    • US17080616
    • 2020-10-26
    • SK hynix Inc.
    • Hyung June YoonJae Hyung JangHoon Moo Choi
    • H01L27/148H01L27/146
    • The image sensing device includes a pixel array including a plurality of unit pixels is arranged in rows and columns. Each of the plurality of unit pixels includes a photoelectric conversion element to generate charge carriers by converting light incident upon the photoelectric conversion element, a plurality of floating diffusion regions spaced apart from the photoelectric conversion element to hold the charge carriers, a plurality of circulation gates located at sides of the photoelectric conversion element in each of a first direction and a second direction perpendicular to the first direction, configured to create an electric field in different regions of the photoelectric conversion element based on circulation control signals, and configured to induce movement of the charge carriers, and a plurality of transfer gates located between the circulation gates, and configured to transfer the charge carriers generated by the photoelectric conversion element to a corresponding floating diffusion region.