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1. 发明授权

US09947859B2 Electronic device and method for fabricating the same 有权
公开(公告)号：US09947859B2
公开(公告)日：2018-04-17
申请号：US14559546
申请日：2014-12-03
申请人： SK hynix Inc. , TOSHIBA MEMORY CORPORATION
发明人： Cha-Deok Dong , Daisuke Watanabe , Kazuya Sawada , Young-Min Eeh , Koji Ueda , Toshihiko Nagase
IPC分类号： G11C11/00 , H01L43/02 , H01L43/12 , H01L43/08 , G11C11/16 , H01L27/22
CPC分类号： H01L43/02 , G11C11/161 , H01L27/228 , H01L43/08 , H01L43/12
摘要： An electronic device that includes a first structure including a first magnetic layer, a second magnetic layer, and a tunnel barrier layer which is interposed between the first magnetic layer and the second magnetic layer; and a second structure disposed over the first structure, and including a magnetic correction layer for correcting a magnetic field of the first structure, wherein a width of a bottom surface of the second structure is larger than a width of a top surface of the first structure.

2. 发明申请

US20170069837A1 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US20170069837A1
公开(公告)日：2017-03-09
申请号：US15354365
申请日：2016-11-17
申请人： SK hynix Inc.
发明人： Won-Joon Choi , Ki-Seon Park , Cha-Deok Dong , Bo-Mi Lee , Guk-Cheon Kim , Seung-Mo Noh , Min-Suk Lee , Chan-Sik Park , Jae-Heon Kim , Choi-Dong Kim , Jae-Hong Kim , Yang-Kon Kim , Jong-Koo Lim , Jeong-Myeong Kim
IPC分类号： H01L43/12 , H01L43/02 , G11C11/16 , H01L43/08
CPC分类号： H01L43/12 , G06F3/0604 , G06F3/0629 , G06F3/0688 , G06F12/0802 , G06F13/4068 , G06F2212/60 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.
摘要翻译：提供具有半导体存储器的电子设备和系统。在一个实现中，例如，电子设备可以包括基板; 底层，设置在基底上并包括导电的硅酸铪; 设置在所述下层上并具有可变的磁化方向的自由层; 设置在所述自由层上方的隧道势垒层; 以及设置在所述隧道势垒层上并具有钉扎磁化方向的钉扎层，并且其中所述自由层包括：第一铁磁材料; 具有小于第一铁磁材料的矫顽力的第二铁磁材料; 以及置于所述第一铁磁材料和所述第二铁磁材料之间的无定形间隔物。

3. 发明申请

US20160351239A1 ELECTRONIC DEVICES HAVING SEMICONDUCTOR MEMORY UNITS AND METHOD OF FABRICATING THE SAME 有权
公开(公告)号：US20160351239A1
公开(公告)日：2016-12-01
申请号：US15231698
申请日：2016-08-08
申请人： SK hynix Inc.
发明人： Cha-Deok Dong
IPC分类号： G11C11/16 , H01L27/22 , H01L43/08 , H01L43/02 , G06F12/0802 , H01L43/10
CPC分类号： G11C11/161 , G06F12/0802 , G06F12/0842 , G06F12/0897 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Electronic devices have a semiconductor memory unit including a magnetization compensation layer in a contact plug. One implementation of the semiconductor memory unit includes a variable resistance element having a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, and a contact plug arranged in at least one side of the variable resistance element and comprising a magnetization compensation layer. Another implementation includes a variable resistance element having a stacked structure of a first magnetic layer having a variable magnetization, a tunnel barrier layer, and a second magnetic layer having a pinned magnetization; and a contact plug arranged at one side of and separated from the variable resistance element to include a magnetization compensation layer that produces a magnetic field to reduce an influence of a magnetic field of the second magnetic layer on the first magnetic layer.

4. 发明授权

US09502639B2 Electronic device for improving characteristic of variable resistance element and method of fabricating the same 有权
标题翻译：用于改善可变电阻元件的特性的电子器件及其制造方法
公开(公告)号：US09502639B2
公开(公告)日：2016-11-22
申请号：US14158702
申请日：2014-01-17
申请人： SK hynix Inc.
发明人： Won-Joon Choi , Ki-Seon Park , Cha-Deok Dong , Bo-Mi Lee , Guk-Cheon Kim , Seung-Mo Noh
IPC分类号： G11C11/00 , H01L43/02 , H01L43/12 , G11C11/16 , H01L43/08 , H01L45/00
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1659 , H01L43/08 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/12 , H01L45/1233
摘要： An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.
摘要翻译：电子设备包括半导体存储器，其中半导体存储器包括：种子层，包括导电硅酸铪; 形成在种子层上的第一磁性层; 形成在所述第一磁性层上的隧道势垒层; 以及形成在隧道势垒层上的第二磁性层。

5. 发明授权

US10305030B2 Electronic device and method for fabricating the same 有权
公开(公告)号：US10305030B2
公开(公告)日：2019-05-28
申请号：US15865180
申请日：2018-01-08
申请人： SK hynix Inc.
发明人： Won-Joon Choi , Ki-Seon Park , Cha-Deok Dong , Bo-Mi Lee , Guk-Cheon Kim , Seung-Mo Noh , Min-Suk Lee , Chan-Sik Park , Jae-Heon Kim , Choi-Dong Kim , Jae-Hong Kim , Yang-Kon Kim , Jong-Koo Lim , Jeong-Myeong Kim
IPC分类号： H01L43/02 , H01L43/10 , H01L43/12 , H01L43/08 , G06F3/06 , G06F12/0802 , G06F13/40 , G11C11/16
摘要： Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

6. 发明授权

US09734060B2 Electronic device and method for fabricating the same 有权
公开(公告)号：US09734060B2
公开(公告)日：2017-08-15
申请号：US14789428
申请日：2015-07-01
申请人： SK hynix Inc.
发明人： Cha-Deok Dong , Ki-Seon Park , Bo-Mi Lee , Won-Joon Choi , Guk-Cheon Kim , Yang-Kon Kim
IPC分类号： G06F12/08 , G06F12/0802 , H01L43/08 , H01L43/10 , H01L27/22
CPC分类号： G06F12/0802 , G06F2212/1028 , G06F2212/202 , G06F2212/222 , H01L27/222 , H01L43/08 , H01L43/10
摘要： An electronic device is provided to include a semiconductor memory that includes: a substrate including a first region and a second region different from the first region; an interlayer dielectric layer formed over the substrate; a first conductive pattern located over the first region and formed in the interlayer dielectric layer, the first conductive pattern including a planarized top surface with a top surface of the interlayer dielectric layer; a second conductive pattern located over the second region and formed in the interlayer dielectric layer, the second conductive pattern including at least a portion recessed below a top surface of the interlayer dielectric layer; a variable resistance pattern formed over the interlayer dielectric layer the variable resistance pattern having a bottom surface coupled to the first conductive pattern and exhibiting different resistance values; and a capping layer pattern formed over the variable resistance pattern.

7. 发明申请

US20170062712A1 ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：电子设备及其制造方法
公开(公告)号：US20170062712A1
公开(公告)日：2017-03-02
申请号：US15353683
申请日：2016-11-16
申请人： SK hynix Inc.
发明人： Won-Joon Choi , Ki-Seon Park , Cha-Deok Dong , Bo-Mi Lee , Guk-Cheon Kim , Seung-Mo Noh , Min-Suk Lee , Chan-Sik Park , Jae-Heon Kim , Choi-Dong Kim , Jae-Hong Kim , Yang-Kon Kim , Jong-Koo Lim
IPC分类号： H01L45/00 , H01L43/10 , H01L43/08 , H01L43/12 , H01L43/02
CPC分类号： H01L45/1233 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10 , H01L43/12 , H01L45/06 , H01L45/141 , H01L45/146 , H01L45/16
摘要： Methods, systems, and devices are disclosed for implementing semiconductor memory using variable resistance elements for storing data. In one aspect, an electronic device is provided to comprise a semiconductor memory unit including: a substrate; an interlayer dielectric layer disposed over the substrate; and a variable resistance element including a seed layer formed over the interlayer dielectric layer, a first magnetic layer formed over the seed layer, a tunnel barrier layer formed over the first magnetic layer, and a second magnetic layer formed over the tunnel barrier layer, wherein the seed layer includes a conductive material having a metallic property and an oxygen content of 1% to approximately 10%.
摘要翻译：公开了使用用于存储数据的可变电阻元件实现半导体存储器的方法，系统和装置。一方面，电子设备被提供以包括半导体存储单元，包括：基板; 设置在所述基板上的层间绝缘层; 以及可变电阻元件，其包括形成在所述层间电介质层上的种子层，形成在所述种子层上的第一磁性层，形成在所述第一磁性层上的隧道势垒层和形成在所述隧道势垒层上的第二磁性层，其中种子层包括具有金属性质和氧含量为1％至约10％的导电材料。

8. 发明授权

US09411734B2 Electronic devices having semiconductor memory units and method of fabricating the same 有权
标题翻译：具有半导体存储单元的电子设备及其制造方法
公开(公告)号：US09411734B2
公开(公告)日：2016-08-09
申请号：US14142911
申请日：2013-12-29
申请人： SK hynix Inc.
发明人： Cha-Deok Dong
IPC分类号： H01L43/02 , H01L27/22 , G06F12/08 , H01L43/08
CPC分类号： G11C11/161 , G06F12/0802 , G06F12/0842 , G06F12/0897 , H01L27/222 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Electronic devices have a semiconductor memory unit including a magnetization compensation layer in a contact plug. One implementation of the semiconductor memory unit includes a variable resistance element having a stacked structure of a first magnetic layer, a tunnel barrier layer, and a second magnetic layer, and a contact plug arranged in at least one side of the variable resistance element and comprising a magnetization compensation layer. Another implementation includes a variable resistance element having a stacked structure of a first magnetic layer having a variable magnetization, a tunnel barrier layer, and a second magnetic layer having a pinned magnetization; and a contact plug arranged at one side of and separated from the variable resistance element to include a magnetization compensation layer that produces a magnetic field to reduce an influence of a magnetic field of the second magnetic layer on the first magnetic layer.
摘要翻译：电子设备具有包括接触插塞中的磁化补偿层的半导体存储单元。半导体存储单元的一个实施方式包括具有第一磁性层，隧道势垒层和第二磁性层的层叠结构的可变电阻元件和布置在可变电阻元件的至少一侧的接触插塞，并且包括磁化补偿层。另一个实施方案包括具有可变磁化的第一磁性层，隧道势垒层和具有钉扎磁化的第二磁性层的层叠结构的可变电阻元件; 以及布置在可变电阻元件的一侧并与可变电阻元件分离的接触插塞，以包括产生磁场的磁化补偿层，以减小第二磁性层在第一磁性层上的磁场的影响。

9. 发明申请

US20150092480A1 ELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US20150092480A1
公开(公告)日：2015-04-02
申请号：US14158702
申请日：2014-01-17
申请人： SK hynix Inc.
发明人： Won-Joon Choi , Ki-Seon Park , Cha-Deok Dong , Bo-Mi Lee , Guk-Cheon Kim , Seung-Mo Noh
IPC分类号： H01L43/02 , G11C11/16 , H01L43/12
CPC分类号： H01L43/02 , G11C11/161 , G11C11/1659 , H01L43/08 , H01L43/12 , H01L45/04 , H01L45/06 , H01L45/12 , H01L45/1233
摘要： An electronic device includes a semiconductor memory, wherein the semiconductor memory includes: a seed layer including conductive hafnium silicate; a first magnetic layer formed over the seed layer; a tunnel barrier layer formed over the first magnetic layer; and a second magnetic layer formed over the tunnel barrier layer.
摘要翻译：电子设备包括半导体存储器，其中半导体存储器包括：种子层，包括导电硅酸铪; 形成在种子层上的第一磁性层; 形成在所述第一磁性层上的隧道势垒层; 以及形成在隧道势垒层上的第二磁性层。

10. 发明授权

US09865806B2 Electronic device and method for fabricating the same 有权
公开(公告)号：US09865806B2
公开(公告)日：2018-01-09
申请号：US15354365
申请日：2016-11-17
申请人： SK hynix Inc.
发明人： Won-Joon Choi , Ki-Seon Park , Cha-Deok Dong , Bo-Mi Lee , Guk-Cheon Kim , Seung-Mo Noh , Min-Suk Lee , Chan-Sik Park , Jae-Heon Kim , Choi-Dong Kim , Jae-Hong Kim , Yang-Kon Kim , Jong-Koo Lim , Jeong-Myeong Kim
IPC分类号： H01L43/02 , H01L43/10 , H01L43/12 , H01L43/08 , G06F3/06 , G06F12/0802 , G06F13/40 , G11C11/16
CPC分类号： H01L43/12 , G06F3/0604 , G06F3/0629 , G06F3/0688 , G06F12/0802 , G06F13/4068 , G06F2212/60 , G11C11/161 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Electronic devices and systems having semiconductor memory are provided. In one implementation, for example, an electronic device may include a substrate; an under layer disposed over the substrate and including conductive hafnium silicate; a free layer disposed over the under layer and having a variable magnetization direction; a tunnel barrier layer disposed over the free layer; and a pinned layer disposed over the tunnel barrier layer and having a pinned magnetization direction, and wherein the free layer includes: a first ferromagnetic material; a second ferromagnetic material having a coercive force smaller than that of the first ferromagnetic material; and an amorphous spacer interposed between the first ferromagnetic material and the second ferromagnetic material.

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