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1. 发明授权

US11139325B2 Solid-state imaging device, imaging apparatus, and electronic apparatus 有权
公开(公告)号：US11139325B2
公开(公告)日：2021-10-05
申请号：US16806172
申请日：2020-03-02
申请人： Sony Corporation
发明人： Taro Sugizaki
IPC分类号： H01L31/0232 , H01L27/14 , G02B5/20 , H04N9/04 , H04N9/07 , H01L27/146
摘要： The present technology relates to a solid-state imaging device, an imaging apparatus, and an electronic apparatus, which can suppress a color mixture without lowering the sensitivity.
In pixels (red pixels (R pixels), green pixels (G pixels), and blue pixels (B pixels)) other than W pixels and adjacent to the W pixels, light shielding films thicker than those of the W pixels are formed at positions adjacent to the W pixels. Furthermore, the shorter the wavelength, the thicker the light shielding film in the RGB pixels other than the W pixels. The present technology is applicable to the solid-state imaging device.

2. 发明授权

US10319761B2 Solid-state imaging device, imaging apparatus, and electronic apparatus 有权
公开(公告)号：US10319761B2
公开(公告)日：2019-06-11
申请号：US15506462
申请日：2015-08-21
申请人： Sony Corporation
发明人： Taro Sugizaki
IPC分类号： H01L31/0232 , H01L27/146 , H01L27/14 , H04N9/07 , G02B5/20 , H04N9/04
摘要： The present technology relates to a solid-state imaging device, an imaging apparatus, and an electronic apparatus, which can suppress a color mixture without lowering the sensitivity.In pixels (red pixels (R pixels), green pixels (G pixels), and blue pixels (B pixels)) other than W pixels and adjacent to the W pixels, light shielding films thicker than those of the W pixels are formed at positions adjacent to the W pixels. Furthermore, the shorter the wavelength, the thicker the light shielding film in the RGB pixels other than the W pixels. The present technology is applicable to the solid-state imaging device.

3. 发明申请

US20180247964A1 SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20180247964A1
公开(公告)日：2018-08-30
申请号：US15506462
申请日：2015-08-21
申请人： Sony Corporation
发明人： Taro Sugizaki
IPC分类号： H01L27/146
CPC分类号： H01L27/14621 , G02B5/201 , H01L27/14 , H01L27/14623 , H01L27/14645 , H04N9/045 , H04N9/04555 , H04N9/07
摘要： The present technology relates to a solid-state imaging device, an imaging apparatus, and an electronic apparatus, which can suppress a color mixture without lowering the sensitivity.In pixels (red pixels (R pixels), green pixels (G pixels), and blue pixels (B pixels)) other than W pixels and adjacent to the W pixels, light shielding films thicker than those of the W pixels are formed at positions adjacent to the W pixels. Furthermore, the shorter the wavelength, the thicker the light shielding film in the RGB pixels other than the W pixels. The present technology is applicable to the solid-state imaging device.

4. 发明授权

US11309284B2 Solid-state image capturing apparatus and electronic device for acquiring a normal image and a narrow band image 有权
公开(公告)号：US11309284B2
公开(公告)日：2022-04-19
申请号：US15512398
申请日：2015-09-25
申请人： SONY CORPORATION
发明人： Taro Sugizaki , Isao Hirota
IPC分类号： H01L25/065 , H01L27/144 , H01L27/00 , G02B5/20 , H01L27/14 , H04N5/369 , G02B5/28 , G02B5/00 , H01L27/146 , H04N5/374 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/0328
摘要： The present technology relates to a solid-state image capturing apparatus and an electronic device that can acquire a normal image and a narrow band image at the same time. The solid-state image capturing apparatus includes a plurality of substrates laminated in two or more layers, and two or more substrates of the plurality of substrates have pixels that perform photoelectric conversion. At least one substrate of the substrates having the pixels is a visible light sensor that receives visible light, and at least another substrate of the substrates having the pixels is a narrow band light sensor that includes narrow band filters being optical filters permeating light in a narrow wavelength band, and receives narrow band light in the narrow band.

5. 发明申请

US20190252438A1 SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20190252438A1
公开(公告)日：2019-08-15
申请号：US16396420
申请日：2019-04-26
申请人： Sony Corporation
发明人： Taro Sugizaki
IPC分类号： H01L27/146 , G02B5/20 , H01L27/14 , H04N9/07
CPC分类号： H01L27/14621 , G02B5/201 , H01L27/14 , H01L27/14623 , H01L27/14645 , H04N9/045 , H04N9/04555 , H04N9/07
摘要： The present technology relates to a solid-state imaging device, an imaging apparatus, and an electronic apparatus, which can suppress a color mixture without lowering the sensitivity.In pixels (red pixels (R pixels), green pixels (G pixels), and blue pixels (B pixels)) other than W pixels and adjacent to the W pixels, light shielding films thicker than those of the W pixels are formed at positions adjacent to the W pixels. Furthermore, the shorter the wavelength, the thicker the light shielding film in the RGB pixels other than the W pixels. The present technology is applicable to the solid-state imaging device.

6. 发明授权

US10319764B2 Image sensor and electronic device 有权
公开(公告)号：US10319764B2
公开(公告)日：2019-06-11
申请号：US15580356
申请日：2016-06-03
申请人： SONY CORPORATION
发明人： Taro Sugizaki
IPC分类号： H01L27/14 , G02F1/13 , H01L27/146 , H04N5/369 , G02F1/1335 , G02F1/1362 , H04N5/238
摘要： The present technology relates to an image sensor and an electronic device capable of performing imaging in which mixed color is reduced. Photoelectric conversion layers including photoelectric conversion units separated in units of pixels are stacked in two or more layers, the image sensor is configured to include a state in which light incident on one pixel in a first photoelectric conversion layer closer to an optical lens is received by the photoelectric conversion unit in a second photoelectric conversion layer distant from the optical lens, the image sensor includes a light-shielding layer configured to shield light transmitted through the first photoelectric conversion layer, between the first photoelectric conversion layer and the second photoelectric conversion layer, the light-shielding layer has an opening to transmit the light from the first photoelectric conversion layer to the second photoelectric conversion layer, and the openings are made to be asymmetric with respect to the pixel in the first photoelectric conversion layer. The present technology can be applied to an image sensor with a multi-layered structure.

7. 发明授权

US10171750B2 Solid-state image sensor, imaging control method, signal processing method, and electronic apparatus 有权
公开(公告)号：US10171750B2
公开(公告)日：2019-01-01
申请号：US15326259
申请日：2015-07-10
申请人： SONY CORPORATION
发明人： Taro Sugizaki , Go Yamanaka , Daisuke Yoshioka , Toru Nishi , Yousuke Horie , Takesi Kozasa , Keneki Go , Norihiro Ichimaru , Naoki Hosoi
IPC分类号： H04N5/243 , H04N5/355 , H04N5/357 , H01L27/146 , H04N5/235 , H04N5/353 , H04N5/369 , H04N5/378 , H04N9/04 , H04N9/07
摘要： The present technology relates to a solid-state image sensor, an imaging control method, a signal processing method, and an electronic apparatus that suppress the deterioration of image quality, which is caused by the difference of sensitivity between pixels. A solid-state image sensor includes: a pixel array unit including a plurality of pixels arranged, the plurality of pixels including a plurality of kinds of pixels, the plurality of kinds of pixels including a first pixel and a second pixel, the first pixel having the highest sensitivity, the second pixel having a sensitivity lower than the sensitivity of the first pixel; and a control unit that controls at least one of an analog gain and exposure time of/for the respective pixels depending on a ratio between the sensitivities of the first pixel and the second pixel. The present technology is applicable to a solid-state image sensor such as a CMOS image sensor.

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