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1. 发明授权

US08994033B2 Contacts for an n-type gallium and nitrogen substrate for optical devices 有权
标题翻译：用于光学器件的n型镓和氮衬底的触点
公开(公告)号：US08994033B2
公开(公告)日：2015-03-31
申请号：US13937338
申请日：2013-07-09
申请人： Soraa, Inc.
发明人： Michael J. Cich , Kenneth John Thomson
IPC分类号： H01L29/15 , H01L33/32 , H01L33/22
CPC分类号： H01L33/0075 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L2933/0008 , H01L2933/0016 , H01L2933/0033
摘要： A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.
摘要翻译：一种制造LED器件的方法。该方法包括提供包括背面和前侧表面的含镓和氮的衬底构件（例如，GaN）。该方法包括使背面表面进行抛光处理，使得背面由表面粗糙度表征，使背面表面进行各向异性蚀刻处理，使各种晶面曝光，形成多个在空间上分布的金字塔状结构非周期性地在后侧表面上处理包括多个金字塔状结构的背面，到等离子体物质，并对背面进行表面处理。该方法还包括形成包含覆盖在经表面处理的背面的铝轴承种类或钛轴承种类的接触材料以形成具有接触材料的多个LED器件。

2. 发明授权

US08802471B1 Contacts for an n-type gallium and nitrogen substrate for optical devices 有权
标题翻译：用于光学器件的n型镓和氮衬底的触点
公开(公告)号：US08802471B1
公开(公告)日：2014-08-12
申请号：US13723968
申请日：2012-12-21
申请人： Soraa, Inc.
发明人： Michael J. Cich , Kenneth John Thomson
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/0075 , H01L33/16 , H01L33/22 , H01L33/32 , H01L2933/0016
摘要： Techniques for manufacturing optical devices are disclosed. More particularly, light emitting diodes and in particular to ohmic contacts for light emitting diodes are disclosed.
摘要翻译：公开了用于制造光学器件的技术。更具体地，公开了发光二极管，特别是用于发光二极管的欧姆接触。

3. 发明授权

US09379280B2 Contacts for an N-type gallium and nitrogen substrate for optical devices 有权
公开(公告)号：US09379280B2
公开(公告)日：2016-06-28
申请号：US14827709
申请日：2015-08-17
申请人： SORAA, INC.
发明人： Michael J. Cich , Kenneth John Thomson
IPC分类号： H01L29/15 , H01L31/0256 , H01L33/00 , H01L33/22 , H01L33/38 , H01L33/40 , H01L33/32
CPC分类号： H01L33/0075 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L2933/0008 , H01L2933/0016 , H01L2933/0033
摘要： A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.

4. 发明授权

US09112116B2 Contacts for an N-type gallium and nitrogen substrate for optical devices 有权
标题翻译：用于光学器件的N型镓和氮基底的触点
公开(公告)号：US09112116B2
公开(公告)日：2015-08-18
申请号：US14629049
申请日：2015-02-23
申请人： SORAA, INC.
发明人： Michael J. Cich , Kenneth John Thomson
IPC分类号： H01L29/15 , H01L33/40 , H01L33/00
CPC分类号： H01L33/0075 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/40 , H01L33/405 , H01L2933/0008 , H01L2933/0016 , H01L2933/0033
摘要： A method for fabricating LED devices. The method includes providing a gallium and nitrogen containing substrate member (e.g., GaN) comprising a backside surface and a front side surface. The method includes subjecting the backside surface to a polishing process, causing a backside surface to be characterized by a surface roughness, subjecting the backside surface to an anisotropic etching process exposing various crystal planes to form a plurality of pyramid-like structures distributed spatially in a non-periodic manner on the backside surface, treating the backside surface comprising the plurality of pyramid-like structures, to a plasma species, and subjecting the backside surface to a surface treatment. The method further includes forming a contact material comprising an aluminum bearing species or a titanium bearing species overlying the surface-treated backside to form a plurality of LED devices with the contact material.
摘要翻译：一种制造LED器件的方法。该方法包括提供包括背面和前侧表面的含镓和氮的衬底构件（例如，GaN）。该方法包括使背面表面进行抛光处理，使得背面由表面粗糙度表征，使背面表面进行各向异性蚀刻处理，使各种晶面曝光，形成多个在空间上分布的金字塔状结构非周期性地在后侧表面上处理包括多个金字塔状结构的背面，到等离子体物质，并对背面进行表面处理。该方法还包括形成包含覆盖在经表面处理的背面的铝轴承种类或钛轴承种类的接触材料以形成具有接触材料的多个LED器件。

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